1 |
Y. Kumagai, Y. Kubota, T. Nagashima, T. Kinoshita, R. Dalmau, R. Schlesser, B. Moody, J. Xie, H. Murakami, A. Koukitu and Z. Sitar, "Preparation of a freestanding AlN substrate from a thick AlN layer grown by hydride vapor phase epitaxy on a bulk AlN substrate prepared by physical vapor transport", Appl. Phys. Exp. 5 (2012) 055504-1.
DOI
|
2 |
R. Dalmau, S. Craft, B. Moody, R. Schlesser, S. Mita, J. Xie, R. Collazo, A. Rice, J. Tweedie and Z. Sitar, "Challenges in AlN crystal growth and prospects of the AlN-based technology", Proc. CS MANTECH Conf., CA. USA (2011).
|
3 |
V. Noveski, R. Schlesser, S. Mahajan, S. Beaudoin and Z Sitar, "Mass transfer in AlN crystal growth at high temperatures", J. Cryst. Growth 264 (2004) 369.
DOI
|
4 |
S.M. Kang, "Step growth and defects formation on growth interface for SiC sublimation growth", J. Korean Cryst. Growth Cryst. Technol. 9 (1999) 558.
|
5 |
S.M. Kang, "The study on the formation of growth steps in the sublimation growth of SiC single crystals", J. Korean Cryst. Growth Cryst. Technol. 11 (2001) 1.
과학기술학회마을
|
6 |
S.M. Kang, "Growth of AlN crystals by the sublimation process", J. Korean Cryst. Growth Cryst. Technol. 18 (2008) 68.
|
7 |
S.M. Kang, "Morphological study on non-seeded grown AlN single crystals", J. Korean Cryst. Growth Cryst. Technol. 22 (2012) 265.
DOI
ScienceOn
|
8 |
S.M. Kang, "A study on the growth of AlN single crystals", J. Korean Cryst. Growth Cryst. Technol. 23 (2013) 279.
DOI
|
9 |
E.N. Mokhov, O.V. Avdeev, I.S. Barash, T.Yu. Chemekova, A.D. Roenkov, A.S. Segal, A.A. Wolfson, Yu.N. Makarov, M.G. Ramm and H. Helava, "Sublimation growth of AlN bulk crystals in Ta crucibles", J. Cryst. Growth 281 (2005) 93.
DOI
ScienceOn
|