• Journal of the Korean Institute of Telematics and Electronics
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• v.21 no.5
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• pp.41-45
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• 1984

The production of high-quality epitaxial layers almost always involves an etching step of silicon substrates with HCl gas prior to epitaxy, In this work, an investigation has been made on the etch rate and the etch-pit formation as a function of HCl gas concentration and etch temperature at atmospheric pressure (1 atm.) and reduced pressure (0.1 atom.). As a result, it is found that the etch rate is proportional to the square of the HCI gas concentration (XHC12) and the apparent ativation energy is between 0 and 111 Kcal/mole for both ammospheric and reduced pressure operation. From these results, it is expected that the HCI etching of silicon in reduced pressure operation proceeds, as in atmospheric operation, via the reaction ; Si + 2HCl ↔ SiCl2 + H2.

• Journal of the Korean Vacuum Society
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• v.7 no.s1
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• pp.160-166
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• 1998

The field emission characteristics of defective diamond films grown by microwave plasma enhanced chemical vapor deposition (MPECVD) have been studied. X-ray diffraction, the poor crystal quality and/or small grain sizes of the diamond phase and the inclusion of the non-diamond carbon phases in these films have been condirmed by raman spectroscopy, scanning electron microscopy, atomic force microscopy, and the reflectance measurements. The degrees of the film defectiveness and the emission characteristics were dependent on the methane concentration. Current-versus-voltage measurements have demonstrated that the defective diamond films have good electron emission characteristics. characteristics strongly suggests the defect-related electron-emission mechanism. The defective diamond films deposited on Si substrates show the field emission current density of 1$\mu\textrm{A}/\textrm{cm}^2$ and 1mA/$\textrm{cm}^2$ have been measured at electric fields as low as 4.5V/$\mu\textrm{m}$ and 7.6V/$\mu\textrm{m}$, respectively. We also observed the similar emission characteristics from the defective diamond film deposited on Cr/Si substrate and could decrease the deposition temperature to $600^{\circ}C$.

• The Bulletin of The Korean Astronomical Society
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• v.41 no.1
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• pp.74.2-74.2
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• 2016

It is important to know how well observation errors are removed in the calibration process prior to ensuing scientific research. In mm-VLBI observations, a radio wave suffers from an atmospheric propagation delay due to the rapid change of atmospheric refraction. It makes phases of VLBI correlation output fluctuate rapidly, which essentially decreases the coherence of phases and reduces the integration time. Consequently, it is challenging to achieve a high signal-to-noise ratio and enhance the quality of scientific output. Among the causes of the atmospheric propagation delay, water vapor in the troposphere is the most decisive factor to affect phase errors in the high frequency range (> 10GHz). It is expected to have the non-dispersive characteristic that enables to introduce new calibration strategy, Frequency Phase Transfer (FPT). This new method utilizes low frequency phases to compensate phase errors in high frequency bands. In addition, Korean VLBI Network (KVN) which benefits from the simultaneous 4-channels (22/43/86/129 GHz) observations is ideal to probe FPT performance. In order to evaluate FPT performance of KVN, we present the results of FPT phase analysis and discuss its performance.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.9 no.3
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• pp.303-308
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• 1999

As a semiconductor material for electronic devices operated under extreme environmental conditions, silicon carbides(SiCs) have been intensively studied because of their excellent electrical, thermal and other physical properties. The growth characteristics of single-crystalline 4H-SiC homoepitaxial layers grown by a thermal chemical vapor deposition (CVD) were investigated. Especially, the successful growth condition of 4H-SiC homoepitaxial layers using a SiC-uncoated atmospheric pressure chamber and carried out using off-oriented substrates prepared by a modified Lely method. In order to investigate the crystallinity of grown epilayers, Nomarski optical microscopy, Raman spectroscopy, photoluninescence(PL), scanning electron microscopy(SEM) and other techniques were utilized. The best quality of 4H-SiC homoepitaxial layers was observed in conditions of growth temperature $1500^{\circ}C$ and C/Si flow ratio 2.0 of $C_{3}H_{8}\;0.2\;sccm\;&\;SiH_{4}\;0.3\;sccm$. The growth rate of epilayers was about $1.0\mu\textrm{m}/h$ in the above growth condition.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2008.06a
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• pp.78-79
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• 2008

In this paper, poly 3C-SiC thin films were grown on $SiO_2$/Si by atmospheric pressure chemical vapor deposition (APCVD) using HMDS, $H_2$, and Ar gas at $1100^{\circ}C$ for 30 min, respectively. And then, palladium films were deposited on poly 3C-SiC by RF magnetron sputter. Thickness, uniformity, and quality of these samples were performed by SEM. Crystallinity and preferred orientationsof palladium were analyzed by XRD. And Pd/poly 3C-SiC schottky diodes were fabricated and characterized by current-voltage measurements. Its electric current density Js and barrier height voltage were measured as $2\times10^{-3}$ A/$cm^2$, 0.58 eV, respectively. And these devices operated about $350^{\circ}C$. From results, Pd/poly 3C-SiC devices are promising for high temperature hydrogen sensor and applications.

• Transactions on Electrical and Electronic Materials
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• v.10 no.3
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• pp.75-79
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• 2009

An intrinsic silicon thin film passivation layer is deposited by the microwave remote-plasma enhanced chemical vapor deposition at temperature of $175^{\circ}C$ and various gas ratios for solar cell applications. The good quality amorphous silicon films were formed at silane $(SiH_4)$ gas flow rates above 15 seem. The highest effective carrier lifetime was obtained at the $SiH_4$, flow rate of 20 seem and the value was about 3 times higher compared with the bulk lifetime of 5.6 ${\mu}s$ at a fixed injection level of ${\Delta}n\;=\;5{\times}10^{14}\;cm^{-3}$. An annealing treatment was performed and the carrier life times were increased approximately 5 times compared with the bulk lifetime. The optimal annealing temperature and time were obtained at 250 $^{\circ}C$ and 60 sec respectively. This indicates that the combination of the deposition of an amorphous thin film at a low temperature and the annealing treatment contributes to the excellent surface and bulk passivation.

• Proceedings of the KIEE Conference
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• 2006.10a
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• pp.71-72
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• 2006

플라스틱 기판 위에 유도 결합 플라즈마 화학적 기상 증착장치 (Inductively Coupled Plasma Chemicai Vapor Deposition, ICP-CVD) 를 사용하여 실리콘 산화막 ($SiO_2$)을 증착하고, 엑시머레이저 어널링 (Excimer Laser Annealing, ELA) 과 $N_{2}O$ 플라즈마 전처리를 통해, 전기용량-전압(Capacitance-Voltage, C-V) 특성과 항복 전압장 (Breakdown Voltage Field) 과 같은 전기적 특성을 개선시켰다. 에너지 밀도 $250\;mJ/cm^2$ 의 엑시머 레이저 어닐링은 실리콘 산화막의 평탄 전압 (Flat Band Voltage) 을 0V에 가까이 이동시키고, 유효 산화 전하밀도 (Effective Oxide Charge Density)를 크게 감소시킨다. $N_{2}O$ 플라즈마 전처리를 통해 항복 전압장은 6MV/cm 에서 9 MV/cm 으로 향상된다. 엑시머 레이저 어닐링과 $N_{2}O$ 플라즈마 전처리를 통해 평탄 전압은 -9V 에서 -1.8V 로 향상되고, 유효 전하 밀도 (Effective Charge Density) 는 $400^{\circ}C$에서 TEOS 실리콘 산화막을 증착하는 경우의 유효 전하 밀도 수준까지 감소한다.

• Proceedings of the KIEE Conference
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• 2006.10a
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• pp.36-37
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• 2006

Both negative and positive substrate bias effects on the structural properties and field-emission characteristics are investigated. carbon nanotubes (CNTs) are grown on Ni catalysts employing an inductively-coupled plasma chemical vapor deposition (ICP-CVD) method. Characterization using various techniques, such as field-emission scanning electron microscopy (FESEM), high-resolution transmission electron microscopy (HRTEM), Auger spectroscopy (AES), and Raman spectroscopy, shows that the physical dimension as well as the crystal quality of CNTs grown can be changed and controlled by the application of substrate bias during CNT growth. It is for the first time observed that the prevailing growth mechanism of CNTs, which is either due to tip-driven growth or based-on-catalyst growth, may be influenced by substrate biasing. It is also seen that negative biasing would be more effectively role in the vertical-alignment of CNTs compared to positive biasing. However, the CNTs grown under the positively bias condition display much better electron emission capabilities than those grown under negative bias or without bias. The reasons for all the measured data regarding the structural properties of CNTs are discussed to confirm the correlation with the observed field-emissive properties.

• Journal of Environmental Health Sciences
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• v.34 no.3
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• pp.219-225
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• 2008

Many building materials may contain high concentrations of volatile organic compounds (VOCs) and other hazardous pollutants(HAPs). Specifically, VOCs discharged by indoor building material may cause "new house" syndrome, atopic dermatitis etc. The diffusion coefficient and initially contained total VOC quantity were determined using microbalance experiments and small chamber tests. Interactions between volatile organic compounds (VOCs) and vinyl flooring (VF), a relatively homogenous, diffusion-controlled building material, were characterized. Rapid determination of the material/air partition coefficient (K) and the material-phase diffusion coefficient (D) for each VOC was achieved by placing thin VF slabs in a dynamic microbalance and subjecting them to controlled sorption/desorption cycles. K and D are shown to be independent of concentration for all of the VOCs and water vapor. This approach can be applied to other diffusion-controlled materials and should facilitate the prediction of their source/sink behavior using physically-based models.

• Journal of Advanced Marine Engineering and Technology
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• v.32 no.4
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• pp.542-549
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• 2008

The evaporation heat transfer coefficient and pressure drop of R-22 and R-407C in a horizontal copper tube were investigated experimentally. The main components of the refrigerant loop are a receiver, a compressor, a mass flow meter, a condenser and a double pipe type evaporator (test section). The test section consists of a smooth copper tube of 6.4 mm inner diameter. The refrigerant mass fluxes were varied from 100 to $300\;kg/m^2s$ and the saturation temperature of evaporator were $5^{\circ}C$. The evaporation heat transfer coefficients of R-22 and R-407C increase with the increase of mass flux and vapor quality. The evaporation heat transfer coefficients of R-22 is about $5.68{\times}46.6%$ higher than that of R-407C. The evaporation pressure drop of R-22 and R-407C increase with the increase of mass flux. The pressure drop of R-22 is similar to that of R-407C. In comparison with test results and existing correlations, correlations failed to predict the evaporation heat transfer coefficient of R-22 and R-407C. therefore, it is necessary to develope reliable and accurate predictions determining the evaporation heat transfer coefficient of R-22 and R-407C in a horizontal tube.