• Journal of the Korean Institute of Landscape Architecture
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• v.35 no.3
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• pp.105-113
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• 2007

This study was conducted to analyze the effects of environmental factors such as soil moisture, light intensity, temperature and humidity on changes in cambial electrical resistance. To improve data quality, cambial electrical resistance was continuously measured at fixed points by using a data logger isolated from alternating current. The relationship between environmental factors and changes in cambial electrical resistance was also analyzed. The results are as follows: 1. Cambial electrical resistance is highly correlated to the temperature of the measured area(r=-0.934). Therefore, temperature compensation is needed to analyze the effects of other environmental factors on cambial electrical resistance changes. 2. If temperature is compensated for, the change of cambial electrical resistance is highly correlated to water vapor pressure(r=-0.836). 3. If temperature and humidity are compensated for, the change of cambial electrical resistance is highly correlated to intensity of light(r=-0.738). 4. Diurnal deviation of soil water potential is not more significantly related than the change of cambial electrical resistance. However, in the long-term, soil water potential and cambial electrical resistance are highly correlated(r=-0.831). This indicates that soil moisture significantly influences the long-term change of cambial electrical resistance.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1997.04a
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• pp.66-69
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• 1997

The p-GaN fins doped with the impurity of Zn were grown on n-GaN films to prevent the defects from the lattice mismatch with sapphire substrates by HVPE. For growth of the high quality n-GaN, the optimized conditions were at first deduced from the results of various HCI gas flow rates and growth temperatures. On the basis of these conditions, p-GaN films were grown and investigated of the characteristics. The FWHM of the double crystal rocking curve of n-GaN was decreased and the hexagonal phases on the surface of GaN films were tend to be vivid with the inoement of HCI gas flow rates. Finally the n-type GaN films with FWHM of 648arcsec were obtained at 10cc/min of HCI gas. As the GaN films were grown with the above conditions, Zn was introduced in the form of vapor as a dopant for p-GaN films. But when Zn vaporized at 77$0^{\circ}C$ was doped to the films, the crystallites of Zn were distributed uniformly on the surface of the GaN film due to the over-doped.

• Journal of Surface Science and Engineering
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• v.36 no.2
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• pp.135-140
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• 2003

The difference in lattice parameter and thermal expansion coefficient between GaN and Si which results in many defects into the grown GaN is larger than that between GaN and sapphire. In order to obtain high quality GaN films on Si substrate, it is essential to understand growth characteristics of GaN. In this study, GaN layers were grown on Si(111) substrates by MOCVD at three different GaN growth temperatures ($900^{\circ}C$, $1,000^{\circ}C$ and $1,100^{\circ}C$), using AlN and LT-GaN buffer layers. Using TEM, we carried out the comparative investigation of growth characteristics of GaN by characterizing lattice coherency, crystallinity, orientation relationship and defects formed (transition region, stacking fault, dislocation, etc). The localized region with high defect density was formed due to the lattice mismatch between AlN buffer layer and GaN. As the growth temperature of GaN increases, the defect density and surface roughness of GaN are decreased. In the case of GaN grown at $1,100^{\circ}$, growth thickness is decreased, and columns with out-plane misorientation are formed.

• International Journal of Fuzzy Logic and Intelligent Systems
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• v.1 no.1
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• pp.87-94
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• 2001

Silicon nitride films grown by plasma-enhanced chemical vapor deposition (PECVD) are useful for a variety of applications, including anti-reflecting coatings in solar cells, passivation layers, dielectric layers in metal/insulator structures, and diffusion masks. PECVD systems are controlled by many operating variables, including RF power, pressure, gas flow rate, reactant composition, and substrate temperature. The wide variety of processing conditions, as well as the complex nature of particle dynamics within a plasma, makes tailoring SiN film properties very challenging, since it is difficult to determine the exact relationship between desired film properties and controllable deposition conditions. In this study, SiN PECVD modeling using optimized neural networks has been investigated. The deposition of SiN was characterized via a central composite experimental design, and data from this experiment was used to train and optimize feed-forward neural networks using the back-propagation algorithm. From these neural process models, the effect of deposition conditions on film properties has been studied. A recipe synthesis (optimization) procedure was then performed using the optimized neural network models to generate the necessary deposition conditions to obtain several novel film qualities including high charge density and long lifetime. This optimization procedure utilized genetic algorithms, hybrid combinations of genetic algorithm and Powells algorithm, and hybrid combinations of genetic algorithm and simplex algorithm. Recipes predicted by these techniques were verified by experiment, and the performance of each optimization method are compared. It was found that the hybrid combinations of genetic algorithm and simplex algorithm generated recipes produced films of superior quality.

• Proceedings of the Korea Association of Crystal Growth Conference
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• 1999.06a
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• pp.271-284
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• 1999

As a semiconductor material for electronic devices operated under extreme environmental conditions, silicon carbides (SiCs) have been intensively studied because of their excellent electrical, thermal and other physical properties. The growth characteristics of single-crystalline 4H-SiC homoepitaxial layers grown by a thermal chemical vapor deposition (CVD) were investigated. Especially, the successful growth condition of 4H-SiC homoepitaxial layers using a SiC-uncoated graphite susceptor that utilized Mo-plates was obtained. The CVD growth was performed in an RF-induction heated atmospheric pressure chamber and carried out using off-oriented substrates prepared by a modified Lely method. In order to investigate the crystallinity of grown epilayers, Nomarski optical microscopy, Raman spectroscopy, photoluminescence(PL), scanning electron microscopy (SEM) and other techniques were utilized. The best quality of 4H-SiC homoepitaxial layers was observed in conditions of growth temperature 1500$^{\circ}C$ and C/Si flow ratio 2.0 of C3H3 0.2sccm & SiH4 0.3sccm. The growth rate of epilayers was about 1.0$\mu\textrm{m}$/h in the above growth condition.

• 한국정보디스플레이학회:학술대회논문집
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• 2005.07b
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• pp.1087-1090
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• 2005

We have investigated the synthesis and field emission properties of high-quality double-walled carbon nanotubes (DWCNTs) using a catalytic chemical vapor deposition method and a hydrogen arc discharge method. The produced carbon materials using a catalytic CVD method indicated high-purity DWCNT bundles free of amorphous carbon covering on the surface. By adopting a hydrogen arc discharge method, we could obtained high-purity DWCNTs in large-scale. DWCNTs showed low turn-on voltage and higher emission stability compared with SWCNTs.

• Proceedings of the Korean Society of Marine Engineers Conference
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• 2005.11a
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• pp.240-241
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• 2005

The experiments were conducted without oil in a closed refrigerant loop which was driven by a magnetic gear pump. The main components of the refrigerant loop are a receiver, a variable-speed pump, a mass flow meter, a pre-heater and evaporator(test section). The test section was made of a horizontal stainless steel tube with the inner diameter of 4.57 mm, and length of 4 m. The experiments were conducted at mass flux of 200 to 700 kg/$m^2s$, saturation temperature of 0$^{circ}C$ to 20$^{circ}C$, and heat flux of 10 to 30 kW/$m^2$. The test results showed the evaporation heat transfer of $CO_2$ has great effect on more nucleate boiling than convective boiling. The evaporation heat transfer coefficients of $CO_2$ are highly dependent on the vapor quality, heat flux and saturation temperature. In comparison with test results and existing correlations, correlations failed to predict the evaporation heat transfer coefficient of $CO_2$, therefore, it is necessary to develop reliable and accurate predictions determining the evaporation heat transfer coefficient of $CO_2$ in a horizontal tube.

• Proceedings of the KSME Conference
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• 2003.04a
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• pp.316-321
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• 2003

The spatter and porosity could be occurred during $CO_2$ CW laser welding of Primer-coated Steel for Shipbuilding. This study has suggested an alternative idea by examining of weld-defect formation mechanism. The primer-coated plate has caused the spatter, humping bead and porosity and these are main part of the welding defect, attributed to the powerful vaporizing pressure of primer attached on the base metal. The zinc of primer has a boiling point that is the lower temperature than melting point of steel. Zinc va}X)f will build up at the interface between the two sheets and this tends to deteriorate the quality of the weld by ejecting weld material from lap position or leaving porosity. Therefore introducing a small gap clearance in the lap position, the zinc vapor could escape through it and sound weld beads can be acquired. In conclusion, we suggested the occurred and prevented mechanism of weld defects with searching the factor.

• Journal of Mechanical Science and Technology
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• v.17 no.12
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• pp.2053-2065
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• 2003

The current trend in automotive finishing industry is to use more electrostatic rotating bell (ESRB) need space to their higher transfer efficiency. The flow physics related with the transfer efficiency is strongly influenced by operating parameters. In order to improve their high transfer efficiency without compromising the coating quality, a better understanding is necessary to the ESRB application of metallic basecoat painting for the automobile exterior. This paper presents the results from experimental investigation of the ESRB spray to apply water-borne painting. The visualization, the droplet size, and velocity measurements of the spray flow were conducted under the operating conditions such as liquid flow rate, shaping airflow rate, bell rotational speed, and electrostatic voltage setting. The optical techniques used in here were a microscopic and light sheet visualization by a copper vapor laser, and a phase Doppler particle analyzer (PDPA) system. Water was used as paint surrogate for simplicity. The results show that the bell rotating speed is the most important influencing parameter for atomization processes. Liquid flow rate and shaping airflow rate significantly influence the spray structure. Based on the microscopic visualization, the atomization process occurs in ligament breakup mode, which is one of three atomization modes in rotating atomizer. In the spray transport zone, droplets tend to distribute according to size with the larger drops on the outer periphery of spray. In addition, the results of present study provide detailed information on the paint spray structure and transfer processes.

• Korean Journal of Crystallography
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• v.12 no.3
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• pp.171-176
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• 2001

HgCdTe films were grown on the (100). (111), (211) CdZnTe, and (100) GaAs substrates by metal organic chemical vapor epitaxy. We have investigated the surface morphology, electrical properties, crystalline qualities, and composition of HgCdTe with substrates orientation. Three dimensional facet growth was occurred on (111) CdZnTe substrate. The crystalline quality of HgCdTe on (100) CdZnTe was superior to that of HgCdTe on (100) GaAs. FWHM values of double crystal x-ray diffraction of HgCdTe on (100) CdZnTe and (100) GaAs were 55 and 125arcsec, respectively. HgCdTe on GaAs substrate showed n-type conductivity with high mobility, however, HgCdTe on CdZnTe showed p-type conductivity with carrier concentration of higher than 10/sup 16/㎤.