• Proceedings of the Korean Vacuum Society Conference
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• 2016.02a
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• pp.364.1-364.1
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• 2016

We report the characteristics of individual ultra-long SnO2 nanowires(NWs) grown on sapphire(0001) substrates by vapor transport method. NWs, with typical lengths of >$400{\mu}m$, grew in the form of NW bundles under a hydrogen reducing atmosphere, without metal catalysts. The individual NWs were examined using high-resolution X-ray diffraction, transmission electron microscopy, and micro-Raman spectroscopy. The results revealed that the SnO2 NWs grew as high-quality, tetragonal-rutile-phase single crystals with mosaic distributions of $0.02^{\circ}$ and $0.026^{\circ}$ in the (101) and (110) planes, respectively.

• Proceedings of the KSME Conference
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• 2003.11a
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• pp.73-78
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• 2003

The InP thin films grown by metalorganic chemical vapor deposition (MOCVD) are widely used to optoelectronic devices such as laser diodes, wave-guides and optical modulators. Effects of various parameters controlling film growth rate such as gas-phase reaction rate constant, surface reaction rate constant and mass diffusivity are numerically investigated. Results show that at the upstream region where film growth rate increases with the flow direction, diffusion including thermal diffusion plays an important role. At the downstream region where the growth rate decreases with flow direction, film deposition mechanism is revealed as a mass-transport limited. Mass transport characteristics are also studied using systematic analyses.

• Proceedings of the Korean Society of Soil and Groundwater Environment Conference
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• 1996.11a
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• pp.50-53
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• 1996

This paper reports the experimental results for the determination of the overall partition coefficient of VOCs in unsaturated soil, A chromatographic method was used for the determination of gaseous partition coefficients to natural soil under various water content conditions. The equilibrium vapor pressure of water over saturated salt solution was used to fix the relative humidity of the air and control the water content of the soil systems. The transport behavior was studied for dichloromethane, trichloroethane and dichlorobenzene pollutants, with log octanol-water partition coefficients(log $K_{ow}$ ) which range from 1.25 to 3.39, or water to soil partitioning which varies by 135 times; water solubility constants which vary by 3 times; and vapor pressures which range from 1 to 362 torr. Water content of the soil had a pronounced effect on the effective partition coefficient(between gas and soil + water stationary phase) as well as on the effective dispersion coefficient.

• International Journal of Air-Conditioning and Refrigeration
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• v.6
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• pp.56-66
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• 1998

The absorption process of water vapor in a liquid film is an important process in LiBr-Water absorption system. The composition of the gas phase, in which a non-absorbable gas is combined with the absorbate, influences the transport characteristics. In the present work, the absorption processes of water vapor into aqueous solutions of lithium bromide in the presence of non-absorbable gas are investigated. The continuity, momentum, energy and diffusion equations for the solution film and gas are formulated in integral forms and solved numerically. It is found that the mass transfer resistance in gas phase increases with the concentration of non-absorbable gas. However the primary resistance to mass transfer is in the liquid phase. As the concentration of non-absorbable gas in the absorbate increases, the interfacial temperature and concentration of absorbate in solution decrease, which results in the reduction of absorption rate. The reduction of mass transfer rate is found to be significant for the addition of a small amount of non-absorbable gas to the pure vapor, especially at the outlet of tube where the non-absorbable gas accumulates. At higher non-absorbable gas concentration, the decrease of absorption rate seems to be linear to the concentration of non-absorbable gas.

• Proceedings of the Korean Institute of Surface Engineering Conference
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• 2012.05a
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• pp.211-212
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• 2012

ZnO submicron particles were grown on Au-catalyzed Si substrate by a vapor phase transport (VPT) growth process under different mixture gas ratio at growth temperature of $900^{\circ}C$. The structural and optical properties of the ZnO submicron particles were investigated by field-emission scanning electron microscopy (FE-SEM), X-ray diffraction (XRD), and photoluminescence (PL). The ZnO submicron particles could be clustered with the $O_2/Ar$ mixture gas ratio(%) higher than 10%, and it was mainly determined by the gas ambient. Particularly, when the $O_2/Ar$ mixture gas ratio was 30%, it was observed the ZnO submicron particles with diameters in the range of 125 to 500 nm and the narrowest full width at half maximum (FWHM) of XRD and PL spectra with $0.121^{\circ}$ and 92 meV, respectively. It was found that the structural and optical properties of the ZnO submicron particles were improved with increasing the $O_2/Ar$ mixture gas ratio through the XRD and PL spectra.

• Applied Chemistry for Engineering
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• v.27 no.3
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• pp.335-341
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• 2016

In this study, impurity effects on diffusive-convection flow fields by physical vapor transport under terrestrial and microgravity conditions were numerically analyzed for the mixture of $Hg_2Cl_2-I_2$ system. The numerical analysis provides the essence of diffusive-convection flow as well as heat and mass transfer in the vapor phase during the physical vapor transport through velocity vector flow fields, streamlines, temperature, and concentration profiles. The total molar fluxes at the crystal regions were found to be much more sensitive to both the gravitational acceleration and the partial pressure of component $I_2$ as an impurity. Our results showed that the solutal effect tended to stabilize the diffusive-convection flow with increasing the partial pressure of component $I_2$. Under microgravity conditions below $10^{-3}g_0$, the flow fields showed a one-dimensional parabolic flow structure indicating a diffusion-dominant mode. In other words, at the gravitational levels less than $10^{-3}g_0$, the effects of convection would be negligible.

• Environmental Engineering Research
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• v.25 no.3
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• pp.281-289
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• 2020

Environmental fate of ionizable organic pollutants such as perfluoroalkyl acids (PFAAs) are of increasing interest but has not been well understood because of uncertain values for parameters related with atmospheric interphase partitioning behavior. In the present study, not only the values for air-water partition coefficient (K_AW) and dissociation constant (pKa) of PFAAs were induced by adjusting to in situ measurements of air-water distribution coefficient between vapor phase and rainwater but also gas-particle partition coefficients were also estimated using three-phase partitioning model of ionizable organic pollutants, in situ measurements of PFAAs in aerosol and air vapor phase, and obtained parameter values. The pKa values of PFAAs we obtained were close to the minimum values suggested in literature except for perfluorooctane sulfonic acids, and COSMOtherm-modeled K_AW values were assessed to more appropriate among suggested values. When applying parameter values we obtained, it was predicted that air particle-associated fate and transport of PFAAs could be negligible and PFAAs could distribute ubiquitously along the transection from urban to rural region by pH-dependent phase transfer in air. Our study is expected to have some implications in prediction of the environmental redistribution of other ionizable organic compounds.

• Journal of the Korea Academia-Industrial cooperation Society
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• v.19 no.9
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• pp.536-542
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• 2018

Tin dioxide, $SnO_2$, is a well-known n-type semiconductor that shows change in resistance in the presence of gas molecules, such as $H_2$, CO, and $CO_2$. Considerable research has been done on $SnO_2$ semiconductors for gas sensor applications due to their noble property. The nanomaterials exhibit a high surface to volume ratio, which means it has an advantage in the sensing of gas molecules. In this study, SnO nanoplatelets were grown densely on Si substrates using a thermal CVD process. The SnO nanostructures grown by the vapor transport method were post annealed to a $SnO_2$ phase by thermal CVD in an oxygen atmosphere at $830^{\circ}C$ and $1030^{\circ}C$. The pressure of the furnace chamber was maintained at 4.2 Torr. The crystallographic properties of the post-annealed SnO nanostructures were investigated by Raman spectroscopy and XRD. The change in morphology was confirmed by scanning electron microscopy. As a result, the SnO nanostructures were transformed to a $SnO_2$ phase by a post-annealing process.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.33 no.3
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• pp.110-115
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• 2023

During the Hg₂Br₂ physical vapor transport process, with increasing the partial pressure of component B, P_B from 40 Torr to 200 Torr, a unicellular convective flow structures move from the crystal growth region to the center region in the vapor phase. The boundary layer flow is dominant for P_B = 40 Torr, and the core region flow is dominant for P_B = 200 Torr. The flow in the vapor phase shows a three-dimensional convective flow structure with a single cell (unicellular) for P_B = 40 Torr and 200 Torr, exhibits an asymmetrical flow with respect to the x, y central axis under the horizontally oriented configuration with an aspect ratio (length-to-width) of 3 and linear conducting walls. The critical temperature difference between the source and crystal region is about 30 K. The total molar flux of Hg₂Br₂ increases with the temperature difference until the total molar flux reaches the critical value. At the critical total molar flux, the total molar flux abruptly decreases.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2009.11a
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• pp.23-23
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• 2009

Recently, the nanowire configuration of GST showed nanosecond-level phase switch at very low power dissipation, suggesting that the nanowires could be ideal for data storage devices. In spite of many advantages of IST materials, their feasibility in both thin films and nanowires for electronic memories has not been extensively investigated. The synthesis of the chalcogenide nanowires was mainly preformed via a vapor transport process such as vapor-liquid-solid (VLS) growth at a high temperature. However, in this study, IST nanowires as well as thin films were prepared at a low temperature (${\sim}250^{\circ}C$) by metal organic chemical vapor deposition(MOCVD) method, which is possible for large area deposition. The IST films and/or nanowires were selectively grown by a control of working pressure at a constant growth temperature by MOCVD. In-Sb-Te NWs will be good candidate materials for high density PRAM applications. And MOCVD system is powerful for applying ultra scale integration cell.