• Resources Recycling
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• v.22 no.2
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• pp.22-28
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• 2013

In the present study, the possibility of recovering and recycling the silicon carbide(SiC) from a silicon sludge by removing Fe and Si impurities was investigated. Si and SiC were separated from the silicon sludge using centrifugation. The separated SiC concentrate consisted of Fe, Si and SiC, in which Fe and Si were removed to recover the pure SiC. Leaching with acid/alkali solution was compared with the vapor-phase chlorination. The Fe concentration removed in the SiC was 49 ppm, and it was separated by leaching with 1 M HCl solution at $80^{\circ}C$ for 1 h. The Si concentration removed in the SiC was 860 ppm, and it was separated by leaching with 1M NaOH solution at $50^{\circ}C$ for 1 h. The SiC concentrate was chlorinated in a tubular reactor, 2.4 cm in diameter and 32 cm in length. The boat filled with SiC concentrate was located at the midpoint of the alumina tube, then, the chlorine and nitrogen gas mixture was introduced. The Fe and Si concentration removed in the SiC were 48 ppm and 405 ppm, respectively, at $500^{\circ}C$ reactor temperature, 4 h reaction time, 300 cc/min gas flow rate, and 10% $Cl_2$ gas mole fraction.

• Korean Journal of Materials Research
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• v.9 no.11
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• pp.1129-1136
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• 1999

TIN films were prepared on Si(100) substrate by ICP-CVD(inductive1y coupled plasma enhanced chemical vapor deposition) using TEMAT(tetrakis ethylmethamido titanium : Ti$[\textrm{N}\textrm{(CH)}_{3}\textrm{C}_{2}\textrm{H}_{5}]_{4}$) precursor at various deposition conditions. Phase, microstructure, and the electrical properties of TIN films were characterized by x-ray diffraction (XRD), x-ray photoelectron spectroscopy (XPS), high resolution transmission electron microscopy (HRTEM) and electrical measurements. Polycrystalline TiN films with B1 structure were grown at temperatures over $200^{\circ}C$. Preferentially oriented along TiN(111) films were obtained at temperatures over $300^{\circ}C$ with the flow rates of 10, 5, and 5 sccm for TEMAT, $\textrm{N}_{2}$ and Ar gas. The TiN/Si(100) interface was flat and no chemical reaction between TIN and $\textrm{SiO}_2$ was found. The resistivity, carrier concentration and the carrier mobility for the TiN sample prepared at $500^{\circ}C$ are 21 $\mu\Omega$cm, 9.5$\times\textrm{10}^{18}\textrm{cm}^{-3}$ and $462.6\textrm{cm}^{2}$/Vs, respectively.

• Journal of Korean Society of Environmental Engineers
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• v.28 no.3
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• pp.249-256
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• 2006

Catalytic combustion of toluene was investigated on the Cu-Mn oxide catalysts prepared by the impregnation(Imp) and the deposition-precipitation(DP) methods. The mixing of copper and manganese has been found to enhance the activity of catalysts. It is then found that catalytic efficiency of the Cu-Mn oxide catalyst prepared by the DP method on combustion of toluene is much higher than that of the Cu-Mn oxide catalyst prepared by Imp method with the same chemical composition. The catalyst prepared by the deposition-precipitation method observed no change of toluene conversion at time on stream during 10 days and at the addition of water vapor. On the basis of catalyst characterization data, it has been suggested that the catalysts prepared by the DP method showed uniform distribution and smaller particle size on the surface of catalyst and then enhanced reduction capability of catalysts. Therefore, we think that the DP method leads on progressive capacity of catalyst and promotes stability of catalyst. It was also presumed that catalytic conversion of toluene on the Cu-Mn oxide catalyst depends on redox reaction and $Cu_{1.5}Mn_{1.5}O_4$ spinel phase acts as the major active sites of catalyst.

• Journal of the Korea Academia-Industrial cooperation Society
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• v.7 no.2
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• pp.113-119
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• 2006

Brazing is an important manufacturing process in the fabrication of Heavy Water Reactor fuel rods, in which bearing and spacer pads are joined to Zircaloy-4 cladding tubes. The physical vapor deposition(PVD) technique is currently used to deposit metallic Be on the surfaces of pads as a filler metal. Amorphous Zr-Be binary alloys which are manufactured by rapid solidification process are under developing to substitute the conventional PVD-Be coating. In the present study, brazed joint with PVD and amorphous alloys of $Zr_{1-x}Be_{x}(0.3{\le}x{\le}0.5)$ as filler metals are compared by mechanism, microstructure and hardness. The thickness of brazed joint with amorphous alloys became much smaller than that of PVD-Be. The erosion of base metal did not occur in the brazed joint with amorphous alloys. The brazing mechanism for PVD-Be seems to be Be diffusion into Zr-4 with capillary action resulting from eutectic reaction while that for amorphous alloys are associated with the liquid phase formation in the brazed joint. The brazed joint microstructure with PVD-Be consists of dendrite while that with amorphous alloys is globular. The $Zr_{0.7}Be_{0.3}$ alloy shows the smooth interface with little erosion in the base metal and is recommended a most suitable brazing filler metal for Zircaloy-4.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.31 no.3
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• pp.103-111
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• 2021

Hexagonal shape Si crystals were grown by the mixed-source hydride vapor phase epitaxy (HVPE) method of mixing solid materials such as Si, Al and Ga. In the newly designed atmospheric pressure mixed-source HVPE method, nuclei are formed by the interaction between GaCl_n, AlCl_n and SiCl_n gases at a high temperature of 1200℃. In addition, it is designed to generate a precursor gas with a high partial pressure due to the rapid reaction of Si and HCl gas. The properties of hexagonal Si crystals were investigated through scanning electron microscopy (FE-SEM), energy dispersive X-ray spectroscopy (EDS), high-resolution X-ray diffraction (HR-XRD), and Raman spectrum. From these results, it is expected to be applied as a new material in the Si industry.