Lee, Chanmi;Jeon, Hunsoo;Park, Minah;Lee, Chanbin;Yang, Min;Yi, Sam Nyung;Ahn, Hyung Soo;Kim, Suck-Whan;Yu, Young Moon;Shin, Keesam;Bae, Jong Seong;Lee, Hyo Suk;Sawaki, Nobuhiko
Journal of the Korean Crystal Growth and Crystal Technology
/
v.25
no.2
/
pp.62-67
/
2015
The carbon microspheres of a core-shell type were grown by the method of mixed-source hydride vapor phase epitaxy (HVPE). The surface and the cross section of the carbon microsphere grown by a new method were observed by scanning electron microscope (SEM). The characteristics of the carbon microsphere were investigated by X-ray photoelectron spectroscopy (XPS) and a high resolution-transmission electron microscope (HR-TEM). From these measurements, the diameters of carbon sphere were about few hundred micrometers. Furthermore, we show that the carbon microsphere of the core-shell type by mixed-source HVPE method can be grown successfully with the larger size than those of the existing one. This mixed-source HVPE method is proposed a new method for making of carbon microsphere.
Proceedings of the Korean Vacuum Society Conference
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2014.02a
/
pp.362-362
/
2014
Atomic layer deposition (ALD) can be regarded as a special variation of the chemical vapor deposition method for reducing film thickness. ALD is based on sequential self-limiting reactions from the gas phase to produce thin films and over-layers in the nanometer scale with perfect conformality and process controllability. These characteristics make ALD an important film deposition technique for nanoelectronics. Tantalum pentoxide ($Ta_2O_5$) has a number of applications in optics and electronics due to its superior properties, such as thermal and chemical stability, high refractive index (>2.0), low absorption in near-UV to IR regions, and high-k. In particular, the dielectric constant of amorphous $Ta_2O_5$ is typically close to 25. Accordingly, $Ta_2O_5$ has been extensively studied in various electronics such as metal oxide semiconductor field-effect transistors (FET), organic FET, dynamic random access memories (RAM), resistance RAM, etc. In this experiment, the variations of chemical and interfacial state during the growth of $Ta_2O_5$ films on the Si substrate by ALD was investigated using in-situ synchrotron radiation photoemission spectroscopy. A newly synthesized liquid precursor $Ta(N^tBu)(dmamp)_2$ Me was used as the metal precursor, with Ar as a purging gas and $H_2O$ as the oxidant source. The core-level spectra of Si 2p, Ta 4f, and O 1s revealed that Ta suboxide and Si dioxide were formed at the initial stages of $Ta_2O_5$ growth. However, the Ta suboxide states almost disappeared as the ALD cycles progressed. Consequently, the $Ta^{5+}$ state, which corresponds with the stoichiometric $Ta_2O_5$, only appeared after 4.0 cycles. Additionally, tantalum silicide was not detected at the interfacial states between $Ta_2O_5$ and Si. The measured valence band offset value between $Ta_2O_5$ and the Si substrate was 3.08 eV after 2.5 cycles.
Journal of the Korean Crystal Growth and Crystal Technology
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v.20
no.4
/
pp.164-167
/
2010
Bulk GaN single crystal with 1.5 mm thickness was successfully grown by hydride vapor phase epitaxy (HVPE) technique. Free-standing GaN substrates of $10{\times}10,\;15{\times}15$ mm size were fabricate after lift-off of sapphire substrate and their optical properties were characterized properties for device applications. X-ray diffraction patterns showed (002) and (004) peak, and the FWHM of the X-ray rocking curve (XRC) measurement in (002) was 98 arcsec. A sharp photoluminescence spectrum at 363 nm was observed and defect spectrum at visible range was not detected. The hexagonal-shaped etch-pits are formed on the GaN surface in $200^{\circ}C\;H_3PO_4$ at 5 minutes. The defect density calculated from observed etch-pits on surface was around $5{\times}10^6/cm^2$. This indicates that the fabricated GaN substrates can be used for applications in the field of optodevice, and high power electronics.
Proceedings of the Korean Vacuum Society Conference
/
2000.02a
/
pp.186-186
/
2000
After LeComber et al. reported the first amorphous hydrogenated silicon (a-Si: H) TFT, many laboratories started the development of an active matrix LCDs using a-Si:H TFTs formed on glass substrate. With increasing the display area and pixel density of TFT-LCD, however, high mobility TFTs are required for pixel driver of TF-LCD in order to shorten the charging time of the pixel electrodes. The most important of these drawbacks is a-Si's electron mobiliy, which is the speed at which electrons can move through each transistor. The problem of low carier mobility for the a-Si:H TFTs can be overcome by introducing polycrystalline silicon (poly-Si) thin film instead of a-Si:H as a semiconductor layer of TFTs. Therefore, poly-Si has gained increasing interest and has been investigated by many researchers. Recnetly, fabrication of such poly-Si TFT-LCD panels with VGA pixel size and monolithic drivers has been reported, . Especially, fabricating poly-Si TFTs at a temperature mach lower than the strain point of glass is needed in order to have high mobility TFTs on large-size glass substrate, and the monolithic drivers will reduce the cost of TFT-LCDs. The conventional methods to fabricate poly-Si films are low pressure chemical vapor deposition (LPCVD0 as well as solid phase crystallization (SPC), pulsed rapid thermal annealing(PRTA), and eximer laser annealing (ELA). However, these methods have some disadvantages such as high deposition temperature over $600^{\circ}C$, small grain size (<50nm), poor crystallinity, and high grain boundary states. Therefore the low temperature and large area processes using a cheap glass substrate are impossible because of high temperature process. In this study, therefore, we have deposited poly-Si thin films on si(100) and glass substrates at growth temperature of below 40$0^{\circ}C$ using newly developed high rate magnetron sputtering method. To improve the sputtering yield and the growth rate, a high power (10~30 W/cm2) sputtering source with unbalanced magnetron and Si ion extraction grid was designed and constructed based on the results of computer simulation. The maximum deposition rate could be reached to be 0.35$\mu$m/min due to a high ion bombardment. This is 5 times higher than that of conventional sputtering method, and the sputtering yield was also increased up to 80%. The best film was obtained on Si(100) using Si ion extraction grid under 9.0$\times$10-3Torr of working pressure and 11 W/cm2 of the target power density. The electron mobility of the poly-si film grown on Si(100) at 40$0^{\circ}C$ with ion extraction grid shows 96 cm2/V sec. During sputtering, moreover, the characteristics of si source were also analyzed with in situ Langmuir probe method and optical emission spectroscopy.
Lee, Gang Seok;Kim, Kyoung Hwa;Park, Jung Hyun;Kim, So Yoon;Lee, Ha Young;Ahn, Hyung Soo;Lee, Jae Hak;Chun, Young Tea;Yang, Min;Yi, Sam Nyung;Jeon, Injun;Cho, Chae Ryong;Kim, Suck-Whan
Journal of the Korean Crystal Growth and Crystal Technology
/
v.31
no.3
/
pp.103-111
/
2021
Hexagonal shape Si crystals were grown by the mixed-source hydride vapor phase epitaxy (HVPE) method of mixing solid materials such as Si, Al and Ga. In the newly designed atmospheric pressure mixed-source HVPE method, nuclei are formed by the interaction between GaCln, AlCln and SiCln gases at a high temperature of 1200℃. In addition, it is designed to generate a precursor gas with a high partial pressure due to the rapid reaction of Si and HCl gas. The properties of hexagonal Si crystals were investigated through scanning electron microscopy (FE-SEM), energy dispersive X-ray spectroscopy (EDS), high-resolution X-ray diffraction (HR-XRD), and Raman spectrum. From these results, it is expected to be applied as a new material in the Si industry.
Silica($SiO_2$) thin film was synthesized by a low pressure metal organic chemical vapor deposition(LPMOCVD) using organic silane compound. Triethyl orthosilicate was used as a source material. Operation pressure was 1~100 torr at outlet of the reactor and deposition temperature was $600{\sim}900^{\circ}C$. The experimental results showed that the high reaction temperature and high source gas concentration led to higher growth rate of $SiO_2$. The step coverage of films on micro-scale trenches was fairly good, which resulted from the phenomena that the condensed oligomers flow into the trenches. We estimated a reaction path that the source gas polymerizes and produces oligomers (dimer, trimer, tetramer, etc.), which diffuse and condense on the solid surface. The chemical species in the gas phase at the outlet of reactor tube were analyzed by quadrapole mass spectrometer. The peaks, assigned to be monomer, dimer of source gas and geavier molecules, were observed at 650 or $700^{\circ}C$. At higher temperature($900^{\circ}C$), the peaks of the heavy molecules disappeared, because almost all the source gas and intermediate(polymerized oligomer) molecules were oxidized or condensed on colder tube wall.
The Cretaceous Chaeyaksan basaltic rocks consist mainly of basaltic tuffs intercalating three layers of basalt. Stratigraphically, the rocks are located between the upper Songnaedong Formation and the lower Geoncheonri Formation and contain plagioclase, augite, hornblende, and a few olivine phenocrysts. Geochemically, they show calc-alkaline characteristics in some immobile element content, but show the alkaline suite feature in the mobile major element composition. The basalts are widely spilitized but some of them is altered to shoshonitic rocks with more calcic plagioclase, calcite, and chlorite, and adularia veinlets are common in the rocks. It is supposed that the post-eruption alteration of the rocks is done through alkali-replacement by hydrothermal solution or vapor rather than by low grade regional metamorphism. It is considered that A1 in hornblende will be available for estimating the pressure of the pre-eruption magma in the reservoir although the plagioclase of the rocks are highly albitized. The crystallization pressure was calculated as 5.7Kb by the equation of Johnson and Rutherford(l989) incorporating of the effect of overestimate of .41T in hornblende in the case of quartz-free rocks. Application of the estimated temperature, pressure and the constituent of phenocrysts of the rocks to the experimental P-T phase diagram for basalts established by Green(1982) indicates the crystallization course and succession of growth of the phenocrysts during of rising and cooling of the magma reservoir; augite + augite and olivine + augite, olivine, and hornblende -+ augite and hornblende+ augite, hornblende, and plagioclase. Such evolution course of the magma may include crystal fractionation by the phenocrysts crystallization and contamination by country rock in lower crust.
Due to the growth in industrialization, potential hazards in subsurface environments are becoming increasingly significant. The extraction of the contaminant from the soil and movement of the water are restricted due to the low permeability and adsorption characteristics of the reclaimed soils. There are a number of approaches to in-situ remediation that are used in contaminated sites for removing contaminants. These include soil flushing, dual phase extraction, and soil vapor extraction. Among these techniques, soil flushing was the focus of the investigation in this paper. Incorporated technique with PVDs has been used for dewatering from fine-grained soils for the purpose of ground improvement by means of prefabricated vertical drain systems. The laboratory model tests were performed by using the flushing tracer solutions for silty soils and recorded the tracer concentration changes with the elapsed time and flow rates. The modeling was intended to predict the effectiveness and time dependence of the remediation process. Modeling has been performed on the extraction, considering tracer concentration and laboratory model test characteristics. The computer model used herein are SEEP/W and CTRAN/W, this 2-D finite element program allows for modeling to determine hydraulic head and pore water pressure distribution, efficiency of remediation for the subsurface environment. It is concluded that the coefficient of permeability of contaminated soil is related with vertical velocity and extracted flow rate. The vertical velocity and extracted flow rate have an effect on dispersivity and finally are played an important role in-situ soil remediation.
Proceedings of the Korean Vacuum Society Conference
/
2012.08a
/
pp.174-175
/
2012
(In, Ga) N-based III-nitride semiconductor materials have been viewed as the most promising materials for the applications of blue and green light emitting devices such as light-emitting diodes (LEDs) and laser diodes. Although the InGaN alloy can have wide range of visible wavelength by changing the In composition, it is very hard to grow high quality epilayers of In-rich InGaN because of the thermal instability as well as the large lattice and thermal mismatches. In order to avoid phase separation of InGaN, various kinds of structures of InGaN have been studied. If high-quality In-rich InGaN/GaN multiple quantum well (MQW) structures are available, it is expected to achieve highly efficient phosphor-free white LEDs. In this study, we proposed a novel InGaN double hetero-structure grown on GaN nano-pyramids to generate broad-band red-color emission with high quantum efficiency. In this work, we systematically studied the optical properties of the InGaN pyramid structures. The nano-sized hexagonal pyramid structures were grown on the n-type GaN template by metalorganic chemical vapor deposition. SiNx mask was formed on the n-type GaN template with uniformly patterned circle pattern by laser holography. GaN pyramid structures were selectively grown on the opening area of mask by lateral over-growth followed by growth of InGaN/GaN double hetero-structure. The bird's eye-view scanning electron microscope (SEM) image shows that uniform hexagonal pyramid structures are well arranged. We showed that the pyramid structures have high crystal quality and the thickness of InGaN is varied along the height of pyramids via transmission electron microscope. Because the InGaN/GaN double hetero-structure was grown on the nano-pyramid GaN and on the planar GaN, simultaneously, we investigated the comparative study of the optical properties. Photoluminescence (PL) spectra of nano-pyramid sample and planar sample measured at 10 K. Although the growth condition were exactly the same for two samples, the nano-pyramid sample have much lower energy emission centered at 615 nm, compared to 438 nm for planar sample. Moreover, nano-pyramid sample shows broad-band spectrum, which is originate from structural properties of nano-pyramid structure. To study thermal activation energy and potential fluctuation, we measured PL with changing temperature from 10 K to 300 K. We also measured PL with changing the excitation power from 48 ${\mu}W$ to 48 mW. We can discriminate the origin of the broad-band spectra from the defect-related yellow luminescence of GaN by carrying out PL excitation experiments. The nano-pyramid structure provided highly efficient broad-band red-color emission for the future applications of phosphor-free white LEDs.
Four types of fluid inclusions are trapped within tourmaline from Daeyou pegmatite, Jangsu-Gun, Jeonllabukdo. They range $5{\sim}100\;{\mu}m$ in size and are grouped into I, II, III, and IV based on the phase behavior at the room temperature: (1) Type I inclusions are liquid-rich and NaCl equivalent salinity ranged $0{\sim}12\;wt%$, and the homogenization temperatures (Th) ranged $181{\sim}230^{\circ}C$ with eutectic temperatures (Te) $-54{\sim}-22^{\circ}C$. (2) Type II inclusions are vapor-rich and salinity ranged $3{\sim}8\;wt%$ NaCl, and Th ranged $177{\sim}304^{\circ}C$ also showing Te $-54{\sim}-29^{\circ}C$. (3) Type III inclusions contain a halite daughter mineral with $31{\sim}40\;wt%$ NaCl, Th $230{\sim}328^{\circ}C$. More than 90% of Type III homogenize by halite dissolution and are spatially associated with silicate melt inclusions. (4) Type IV inclusions are $CO_{2}$-bearing containing various daughter minerals such as sylvite and/or halite. The density of $CO_{2}$ system within the Type IV is $0.80{\sim}0.75\;g/cm^{3}$, Th $190{\sim}317^{\circ}C$, and salinity $2{\sim}35\;wt%$ NaCl. Type III fluid inclusions, considered as the earliest fluid, formed from the fluid exsolved from the crystallizing pegmatite. It is suggested that Type II fluid in the central part of tourmaline were exsolved earlier than Type I fluids in the margin indicating salinity fluctuation during the growth of tourmaline. It implies the fluctuation of the pressure since the salinity of fluid exsolved from the crystallizing melt is governed by the pressure. The last fluid was Type IV, which may be derived from the nearby limestone and metasedimentary rocks. It is suggested that Daeyou pegmatite containing muscovite without miarolitic cavities was formed by the partial melting resulted from the regional metamorphism. Subsequently, the exsolving fluids from the crystallizing melt were trapped in tourmaline at high pressure condition. The exsolved fluids contain various components such as $CaCl_{2}\;and\;MgCl_{2}$ as well as NaCl and KCl. The exsolution began at least at $2.7{\sim}5.3\;kbar\;and\;230{\sim}328^{\circ}C$ with the pressure fluctuation.
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