• Journal of the Korean Crystal Growth and Crystal Technology
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• v.19 no.1
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• pp.1-5
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• 2009

In this study, we performed growth of InGaN/GaN multi quantum well (MQW) structures on semi-polar (1-10]) GaN facet on 8-degree off oriented stripe patterned (100) Si substratcs by MOVPE. The structural and optical properties of the InGaN/GaN multi quantum well (MQW) structures grown on (1-101) GaN stripe depend on $NH_3$ flow rate, TMI flow rate and growth temperature are characterized by cathodoluminescence (CL) and scanning electron microscopy (SEM). With the decrease of $NH_3$ flow rate, the threading dislocation of (1-101) GaN is considerably reduced. We could control the transition wavelength of InGaN/GaN MQW structures from 391.5 nm to 541.2 nm depend on the growth conditions.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.16 no.4
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• pp.162-165
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• 2006

The selective growth of InCaN/AlGaN light emitting diodes was performed by mixed-source hydride vapor phase epitaxy (HVPE). In order to grow the InGaN/AlGaN heterosturcture consecutively, a special designed multi-sliding boat was employed in our mixed-source HVPE system. Room temperature electroluminescence spectum of the SAG-InGaN/AlGaN LED shows an emission peak wavelength of 425 nm at injection current 20 mA. We suggest that the mixed-source HVPE method with multi-sliding boat system is possible to be one of the growth methods of III-nitrides LEDs.

• 한국전산유체공학회:학술대회논문집
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• 2008.03b
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• pp.472-473
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• 2008

Flow boiling in parallel microchannels has received attention as an effective heat sink mechanism for power-densities encountered in microelectronic equipment. the bubble dynamics coupled with boiling heat transfer in microchannels is still not well understood due to the technological difficulties in obtaining detailed measurements of microscale two-phase flows. In this study, complete numerical simulation is performed to further clarify the dynamics of flow boiling in microchannels. The level set method for tracking the liquid-vapor interface is modified to include the effects of phase change and contact angle. The method is further extended to treat the no-slip and contact angle conditions on the immersed solid. Also, the reverse flow observed during flow boiling in parallel microchannels has been investigated. Based on the numerical results, the effects of channel shape and inlet area restriction on the bubble growth, reverse flow and heat transfer are quantified.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.11 no.4
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• pp.255-260
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• 1998

Behavior of solid phase crystallizations (SPC) of RF sputtered and LPCVD amorphous hydrogenated silicon film were investigated. LPCVD films showed the higher degree of crystallinity and larger grain size than sputtered films. The applicable degree of crystallinity was also obtained from sputtered films. The deposition method of amorphous silicon film influenced the behavior of post annealing SPC. Observed degree of crystallinity of sputtered films strongly depended on the partial pressure of hydrogen in deposition. The higher deposition temperature of sputtering provided the better crystallinity after SPC. Due to the high degree of poly-crystallinity, the retardation of larger grain growth was observed on sputtering film.

• Journal of Korean Vacuum Science & Technology
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• v.2 no.2
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• pp.118-121
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• 1998

Diisopropylselenide (DIPSe) is employed for the metalorganic vapor phase epitaxy (MOVPE) of ZnSe in order to eliminate premature gas phase reaction while maintaining negligible carbon incorporation and preserving relatively low growth temperature. In combination with dimethylzinc, single crystalline ZnSe layers were grown on GaAs at temperature around 450$^{\circ}C$. Secondary ion mass spectrometry showed a negligible carbon incorporation in ZnSe films grown from DIPSe even at high [Ⅵ]/[II] ratios, in contrast of a carbon concentration of 1021 cm-3 in ZnSe films grown from diallyselenide (DASe). Crystalline and interface quality are demonstrated by secondary electron microscopy, secondary ion mass spectroscopy and double crystal X-ray diffraction.

• Proceedings of the KIEE Conference
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• 2003.07c
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• pp.1571-1573
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• 2003

Diamond films including nanocystalline and graphite phase are grown by microwave plasma chemical vapor deposition using $N_2$ additives and negative substrate bias at growth step. The microstructure of the films is controlled by changing $N_2$ gas ratio and negative bias. Defects and grain boundaries between diamond and graphite are proposed to be crucial factors for forming the conducting path of electron emissions. The effect of growth parameters on the film microstructure are investigated by Raman spectroscopy and scanning electron microscopy(SEM). Electron emission characteristics are also examined in terms of the film growth conditions.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.12 no.2
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• pp.101-109
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• 2002

A complex chemical equilibrium analysis was performed to study the hot-wall CVD process of the SiC/C functionally gradient materials (FGM). Thermochemical calculations of the Si-C-H-Cl system were carried out, and the effects of process variables(deposition temperature, reactor pressure, C/[Si+C] and H/[Si+C] ratios in the source gas) on the composition of deposited layers and the deposition yield were investigated. The CVD phase diagrams of the SiC/C FGM deposition were obtained, and the optimum process windows were estimated from the results.

• Proceedings of the Materials Research Society of Korea Conference
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• 2002.05a
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• pp.132-132
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• 2002

Diamond is well known as the hardest material in nature. It also has other unique bulk physical and mechanical properties, such as very high thermal conductivity and broad optical transparency, which enable a number of new applications now that large areas of diamond can be fabricated by the new diamond plasma chemical vapor deposition (CVD) technologies. A study on the effects of growth kinetics and properties of diamond films obtained by addition of argon (~7 vol. %) into the methane/hydrogen mixture is carried out using HFCVD system. A negative bias was used as a nucleation enhancement method in addition to the argon dilution. The scanning electron microscopy (SEM) image of surface morphology shows well faceted crystallites with a predominance of angular shapes corresponding to <100> and <110> crystalline surfaces. The nucleation density and growth rate with argon dilution is two orders of magnitude higher than without argon deposition. The Raman spectra show a good quality film whereas XPS spectra show existence of only diamond phase.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1995.11a
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• pp.97-101
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• 1995

GaN films were prepared on Si(111) substrates by hydride vapor phase epitaxy (HVPE) on HCl-NH$_3$-N$_2$gas system. Effects of HCl gas flow rate on the film investigate under deposition conditions of flow time of 10min, 20min, 30min. The deposition rate increased with increasing HCl gas flow rate in the range of 10cc/min to 40cc/min and deposition time. Strung (00.2) oriented GaN film was obtained at a lower HCl flow rate and improved of the surface morphology.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1996.05a
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• pp.19-22
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• 1996

GaN films were prepared on Al$_2$O$_3$(1120) substrates by hydride vapor phase epitaxy (HVPE) with HCl-NH$_3$-N$_2$ gas system. The growth rate was increased with increasing the substrate temperature below 1050$^{\circ}C$ and decreased over the temperature, increased with growth time. The X-ray diffraction patterns showed only (0002) GaN peak. The UV-Visible Spectrophotometer showed a good optical absorption and fundamental absorption occurred at 3700${\AA}$.