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Growth of InGaN/AlGaN heterostructure by mixed-source HVPE with multi-sliding boat system  

Jang, K.S. (Department of Applied Sciences, Korea Maritime University)
Kim, K.H. (Department of Applied Sciences, Korea Maritime University)
Hwang, S.L. (Department of Applied Sciences, Korea Maritime University)
Jeon, H.S. (Department of Applied Sciences, Korea Maritime University)
Choi, W.J. (Department of Applied Sciences, Korea Maritime University)
Yang, M. (Department of Applied Sciences, Korea Maritime University)
Ahn, H.S. (Department of Applied Sciences, Korea Maritime University)
Kim, S.W. (Department of Physics, Andong National University)
Yoo, J. (Samsung Electro-Mechanics Co., Ltd.)
Lee, S.M. (Samsung Electro-Mechanics Co., Ltd.)
Koike, M. (Samsung Electro-Mechanics Co., Ltd.)
Publication Information
Journal of the Korean Crystal Growth and Crystal Technology / v.16, no.4, 2006 , pp. 162-165 More about this Journal
Abstract
The selective growth of InCaN/AlGaN light emitting diodes was performed by mixed-source hydride vapor phase epitaxy (HVPE). In order to grow the InGaN/AlGaN heterosturcture consecutively, a special designed multi-sliding boat was employed in our mixed-source HVPE system. Room temperature electroluminescence spectum of the SAG-InGaN/AlGaN LED shows an emission peak wavelength of 425 nm at injection current 20 mA. We suggest that the mixed-source HVPE method with multi-sliding boat system is possible to be one of the growth methods of III-nitrides LEDs.
Keywords
HVPE; LED; SAG; EL; I-V; InGaN/AlGaN heterostructure; Multi-sliding boat system;
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