• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 1995.11a
• /
• pp.71-73
• /
• 1995

In this work, we synthsized GaN powders by the direct reactions of Ga with NH$_3$at the temperature range of 950∼1150$^{\circ}C$ and we growth the GaN thin films on Si and sapphire substrates using the synthesized GaN powders by the vapor phase epitaxy method. The synthesized powder had hexagonal crystal structures with lattice constants of a$\sub$0/=3.1895${\AA}$, c$\sub$0/=5.18394${\AA}$. The reaction rates of GaN were increased with both reaction time and temperature, however it did not depends on the flow rates of NH$_3$. The island type GaN crystals were grown on (0001) sapphire substrates and fast lateral growth of GaN on (111) Si substrate than sapphire was observed in our experiments.

• Journal of the Korean institute of surface engineering
• /
• v.25 no.6
• /
• pp.287-292
• /
• 1992

Silicon nitride thin film (SiNx) was deposited onto the 3inch silicon wafer using an electron cyclotron resonance (ECR) plasma apparatus. The thin films which were deposited by changing the SiH4N2 gas flow rate ratio at 1.5mTorr without substrate heating were analyzed through the x-ray photo spectroscopy (XPS) and ellipsometer measurements, etc. Silicon nitride thin films prepared by the electron cyclotron resonance plasma chemical vapor deposition method at low substrate temperature (<10$0^{\circ}C$) exhibited excellent physical and electrical properties. The very uniform and good quality silicon nitride thin films were obtained. The characteristics of electron cyclotron resonance plasma were inferred from the analyzed results of the deposited films.

• Korean Journal of Air-Conditioning and Refrigeration Engineering
• /
• v.11 no.4
• /
• pp.431-439
• /
• 1999

A generator-GAX combined rectification system of an ammonia absorption heat pump was investigated to get the optimum design values. The mass and heat transfer phenomena of the rectification system were analysed. The number of column plates, equilibrium temperature of solution on each plate and flow rates of solution and vapor generated were predicted. The characteristics of mass and heat transfer of the generator-GAX combined rectification system, i.e. concentration difference of leaving solution and vapor on each column plate, were found to be mainly governed by the pressure of generator, reflex ratio and temperature difference of analyser coolant. The number of rectification column plates for each different pressure in generator was obtained. The optimum locations for installing the feeder from solution-cooled absorber and GAX desorber in generator were predicted. The improvement of COP was followed by the increase of the rectifier efficiency and the number of column plate, and the decrease of reflex ratio.

• Bulletin of the Korean Chemical Society
• /
• v.26 no.9
• /
• pp.1415-1420
• /
• 2005

The spectral interferences of OH from aqueous solvents in ICP-AES have been studied and eliminated using a cryogenic argon trap. The prominent lines of Bi I 306.772 nm, Al I 309.271 nm, and V II 310.230 nm, which are very seriously overlapped with the OH band, were examined. With an extended torch and high tangential flow of 20 L/min, water vapor from air entrainment was prevented. The combination of a condenser and argon cryogenic trap was able to eliminated most of water vapor carried by the argon sample gas. Removal of OH spectral interference could extend the linearity of the calibration curve 5-10 times on the lower concentration for ICP-AES. Interference Equivalent Concentration (IEC) has been reduced to 5.6, 5.9, and 12.4 times for Bi, Al and V, respectively.

• Carbon letters
• /
• v.25
• /
• pp.25-32
• /
• 2018

In this study, a thermal-gradient chemical vapor infiltration (TG-CVI) process was numerically studied in order to enhance the deposition uniformity within the preform. The computational fluid dynamics technique was used to solve the governing equations for heat transfer and gas flow during the TG-CVI process for two- and three-dimensional (2-D and 3-D) models. The temperature profiles in the 2-D and 3-D models showed good agreement with each other and with the experimental results. The densification process was investigated in a 2-D axisymmetric model. Computation results showed the distribution of the SiC deposition rate within the preform. The results also showed that using two-zone heater gave better deposition uniformity.

• Journal of the Korean Crystal Growth and Crystal Technology
• /
• v.28 no.2
• /
• pp.63-68
• /
• 2018

Natural convection of a two dimensional laminar steady-state incompressible fluid flow in a rectangular enclosure has been investigated numerically for low aspect ratios with the physical vapor transport crystal growth. Results show that for aspect ratio (Ar = L/H) range of $0.1{\leq}Ar{\leq}1.5$, with the increase in Grashof number by one order of magnitude, the total mass flux is much augmented, and is exponentially decayed with the aspect ratio. Velocity and temperature profiles are presented at the mid-width of the rectangular enclosure. It is found that the effect of Grashof number on mass transfer is less significant when the enclosure is shallow (Ar = 0.1) and the influence of aspect ratio is stranger when the enclosure is tall and the Grashof number is high. Therefore, the convective phenomena are greatly affected by the variation of aspect ratios.

• 한국정보디스플레이학회:학술대회논문집
• /
• 2003.07a
• /
• pp.998-1000
• /
• 2003

We have investigated thin film morphology of pentacene thin films by the process of low-pressure gas assisted organic vapor deposition (LP-GAOVD). Source temperature, inert gas flow rate, substrate temperature and deposition pressure during film deposition is used to vary the growth rate, thin film morphology and the crystalline grain size of pentacene thin films. The electrical properties of pentacene thin films for applications in organic thin film transistor and electrophoretic displays will be discussed.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
• /
• v.23 no.5
• /
• pp.418-423
• /
• 2010

Carbon nanotubes (CNTs) were synthesized by Fe-catalytic chemical vapor deposition (CVD) method about $800^{\circ}C$. The influence of process parameters such as pretreatment conditions, gas flow ratio, processing time, etc on the growth of CNTs was investigated by field emission scanning electron microscopy, transmission electron microscopy, and Raman spectroscopy. Ammonia was added to acetylene source gas before and during the CNT growth. Different types of CNTs formed depending upon the processing condition. It was found that ammonia prevented amorphous carbons from adsorbing to the outer wall of CNT, resulting in purification of CNTs during CNT growth.

• Journal of the Korean Society for Railway
• /
• v.3 no.3
• /
• pp.101-108
• /
• 2000

In this study, we tested hybrid pilot system combined with soil vapor extraction and bioventing methods on the contaminated railroad soil. So, we found out the remediability and operating conditions. Air permeability(k) and gas phase(O$_2$/CO$_2$/VOCs) level trend are very important to determine the remediation rate of the contaminated sites. Throughout hybrid pilot test on different conditions, the range of air permeability(k) was 1985∼1194 darcy. The tests results in hybrid system was appropriate on this test sites, and the suitable injection air flow rate was 3.5㎥/hr. So, we suggested a basic data for the remediation and management of contaminated railroad soil.

• Journal of the Korean Ceramic Society
• /
• v.44 no.4 s.299
• /
• pp.202-207
• /
• 2007

High-Quality 1-Dimensional InN single crystalline have been grown by Halide Vapor-Phase Epitaxy on the Au catalyst coated Si substrate using the vapor-liquid-solid growth mechanism. We have been grown 1-dimension InN nanowires having controlled the growth conditions for substrate temperature and gases flow rate. The grown InN nanowire of characteristics for morphologies, crystal structure, and element analysis were carried out by SEM, HR-TEM, and EDS respectively. And the defects of InN crystalline were analyzed by indexing of selective area diffraction pattern with attached HR-TEM. We have successfully obtained the defect-free 1-dimensional InN single crystalline nanowire at the atmosphere pressure.