• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1997.04a
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• pp.293-296
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• 1997

The experimental system used for vapor deposition polymerization (VDP) from PMDA (Pyromellitic dianhydride) and DDE (4, 4-diaminodiphenyl ether) were changed to PI (polyimide) thin films by thermal curing. The curing temperatures were 20$0^{\circ}C$, 25$0^{\circ}C$, 30$0^{\circ}C$, 35$0^{\circ}C$. When test number was 40, the electric breakdown strengths of PI were 1.21MV/cm, 3.94MV/cm, 4.61MV/cm, 4.55MV/cm according to curing temperatures.

• Proceedings of the KIEE Conference
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• 1998.11c
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• pp.816-818
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• 1998

In this paper Polyimide(PI) thin film are fabricated by vapor deposition polymerization(VDP) of dry process which are easy to control the film's thickness and hard to pollute due to volatile solvent. The FT-IR spectrum show that PAA thin films fabricated by VDP are changed to PI thin film by thermal curing. From AFM(Atomic Force Microscopy) experimental as the higher curing temperature. the thin film thickness decreases and roughness decresse.

• Proceedings of the KIEE Conference
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• 1996.07c
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• pp.1624-1626
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• 1996

PoIyimide thin films fabricated at substrate temperature $20^{\circ}C$, $40^{\circ}C$and $70^{\circ}C$ by vapor deposition polymerization method were confirmed by FT-IR spectra. It is found that deposition rate decreas according as increasing substrate temperature. Defusion depth of evaporation Al at which thin films be used for an insulating films between layers of semiconductor were about $300{\AA}$.

• 한국정보디스플레이학회:학술대회논문집
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• 2007.08a
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• pp.958-961
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• 2007

The electrical characteristics of organic thin-filmtransistor (OTFTs) can be improved by inserting adhesion layer on gate dielectrics. Adhesion layer was used as polymeric adhesion layer deposited on inorganic gate insulators such as silicon dioxide $(SiO_2)$ and it was formed by vapor deposition polymerization (VDP) instead of spin-coating process. The OTFTs obtained the on/off ratio $of{\sim}10^4$, threshold voltage of 1.8V, subthreshold slop of 2.9 V/decade and field effect mobility about $0.01\;cm^2/Vs$.

• Bulletin of the Korean Chemical Society
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• v.25 no.1
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• pp.31-32
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• 2004

• Journal of the Korean Vacuum Society
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• v.7 no.3
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• pp.229-236
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• 1998

In this paper, thin films of Polyimide (PI) were fabricated by vapor deposition polymerization method (VDPM) of dry processes. The film's properties with curing temperature and electrical properties were studies. The synthesis of hexafluoroisopropyliden-2,2-bis[phthalic anhydride](6FDA) and 4, 4'-diamino diphenyl ether (DDE) was carried out by vapor deposition polymerization(VDP) with the same deposition rate. The evaporation temperature of 6FDA and DDE were $214^{\circ}C$ and $137^{\circ}C$, respectively, so as to preserve balance of stoichiometry. The polymic acid (PAA) made by VDPM were changed to PI by thermal curing. The uniformity and density of PI thin films were increased according to increasing curing temperature. The relative permittivity and dissipation loss factor were 3.7 and 0.008 at the frequency of 100Hz~200KHz, respectively, for the fabricated in the curing temperature of $300^{\circ}C$. Also, the resistivity was about 1.05$\times$$ 10^{15}$$\Omega$cm at $30^{\circ}C$.

• 한국정보디스플레이학회:학술대회논문집
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• 2004.08a
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• pp.661-664
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• 2004

In this paper, it was demonstrated that the organic thin film transistors with the organic gate insulators were fabricated by vapor deposition polymerization (VDP) processing. The configuration of OTFTs was a staggered-inverted top-contact structure and gate dielectric layer was deposited with 0.45 ${\mu}m$ thickness. In order to form polyimide as a gate insulator, VDP process was also introduced instead of spin-coating process. Polyimide film was respectively co-deposited with different materials. One was from a 4,4'-oxydiphthalic anhydride (ODPA) and 4, 4'-oxydianiline (ODA) and the other was from 2,2-bis(3,4-dicarboxyphenyl) hexafluoropropane dianhydride (6FDA) and ODA. And it was also cured at 150 $^{\circ}C$ for 1 hour followed by 200 $^{\circ}C$ for 1 hour. Electrical characteristics of the organic thin-film transistors were detailed comparisons between the ODPA-ODA and the 6FDA-ODA which were used as gate insulator.

• The Transactions of The Korean Institute of Electrical Engineers
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• v.56 no.6
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• pp.1080-1086
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• 2007

The aim of this paper is to establish the optimum fabrication condition of specimens, using the Vapor Deposition Polymerization Method(VDPM), which is one of modesto prepare functional organic thin films using a dry process, and to develop a thin film type humidity sensor which has good humidity sensitive characteristics. The inner part of the film became denser and roughness of the film surface eased as curing temperature increased so that thickness of the film could be made uniform. This also shows the appropriate curing temperature was $250^{\circ}C$. The basic structure of the humidity sensor is a parallel capacitor which consists of three layers of Aluminum/Polyimide/Aluminum. The result of SEM and AFM measurement shows that the thickness of PI thin films decreased and the refraction increased as curing temperature increased, which indicates that a capacitance-type humidity sensor utilizing polyimide thin film is fabricated on a glass substrate. The characteristics of fabricated samples were measured under various conditions, and the samples had linear characteristics in the range of 20-80 %RH, independent of temperature change, and low hysteresis characteristic.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.19 no.4
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• pp.357-361
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• 2006

The electrical performances of organic thin-film transistors (OTFTs) have been improved for the last decade. In this paper, it was demonstrated that the electrical characteristics of the organic thin film transistors (OTFTs) were improved by using polymeric material as adhesion layer on gate insulator. We have investigated OTFTs with polyimide adhesion layer which was fabricated by vapor deposition polymerization (VDP) processing and formed by co-deposition of 2,2-bis (3,4-dicarboxyphenyl) hexafluoropropane dianhydride and 4,4'-oxydianiline. It was found that the OTFTs with adhesion layer showed better electrical characteristics than with bare layer because of good matching between semiconductor and gate insulator. Our devices of performance are field effect mobility of $0.4cm^2/Vs$, threshold voltage of -0.8 V and on-off current ratio of $10^6$. In addition, to improve the electrical characteristics of OTFT, we have reduced the thickness of adhesion layer up to a few nanometrs.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2005.07a
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• pp.70-71
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• 2005

The electrical performances of organic thin-film transistors (OTFTs) have been improved for the last decade. In this paper, it was demonstrated that the electrical characteristics of the organic thin film transistors (OTFTs) were improved by using polymeric material as adhesion layer on gate insulator. We have investigated OTFTs with polyimide adhesion layer which was fabricated by vapor deposition polymerization (VDP) processing and formed by co-deposition of 6FDA and ODA. It was found that the OTFTs with adhesion layer showed better electrical characteristics than with bare layer because of good matching between semiconductor and gate insulator. Our devices of performance are field effect mobility of $0.4cm^2$/Vs, threshold voltage of -0.8 V and on-of current ratio of $10^6$. In addition, to improve the electrical characteristics of OTFT, we have reduced the thickness of adhesion layer up to a few nanometrs.