• Proceedings of the Korean Fiber Society Conference
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• 2002.04a
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• pp.5-8
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• 2002

Poly(p-xylylene) (PPX) is most easily prepared by a vapor deposition polymerization (VDP) of [2, 2]paracychophane, as described by Gorham.$^1$ Poly(tetrafluoro-p-xylylene) (F-PPX) is of interest in view of its potential applications as an interlayer dielectric material in high-speed integrated circuits, since it has an extremely low dielectric constant (〈2.35).$^2$ (omitted)

• Journal of the Korean Vacuum Society
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• v.8 no.3B
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• pp.340-345
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• 1999

In this paper, polyimide thin films are fabricated by vapor deposition polymerization method appling to the interlayer insulator of semiconductor device, and are investigated in detail. It is found that the packing density and uniformity of films deposited by thermal evaporation are increased according to curing temperature. The resistivity, breakdown strength, relative permitivity, and dielectric loss are $3.2\tomes10^{15}\Omega$cm, 4.61 MV/cm, 2.9(10kHz) at $25^{\circ}C$, respectively. This thin films can be endured at $230^{\circ}C$ for 20,000 hours. Finally, we conclude that the thin films having the characteristics similar to those of $SiO_2$ can be used as an insulation films between layers of semiconductor device.

• Journal of the Korean Applied Science and Technology
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• v.19 no.4
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• pp.335-338
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• 2002

A new process for polymeric gate insulator in field-effect transistors was proposed. Fourier transform infrared absorption spectra were measured in order to identify ODPA-ODA polyimide. Its breakdown field and electrical conductivity were measured. All-organic thin-film transistors with a stacked-inverted top-contact structure were fabricated to demonstrate that thermally evaporated polyimide films could be used as a gate insulator. As a result, the transistor performances with evaporated polyimide was similar with spin-coated polyimide. It seems that the mass-productive in-situ solution-free processes for all-organic thin-film transistors are possible by using the proposed method without vacuum breaking.

• 한국정보디스플레이학회:학술대회논문집
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• 2007.08b
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• pp.1348-1351
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• 2007

We demonstrated that the threshold voltage shift owing to a gate-bias stress is originated from the trapped charges at the interface between semiconductor layer and dielectric layer, and such drawback can be settled by applying long-term delay time to the gate electrode.

• Proceedings of the Polymer Society of Korea Conference
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• 2006.10a
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• pp.314-314
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• 2006

The FRET property has been extensively studied from the theoretical view points to the practical applications. In case that the donor and acceptor are confined in nanodimension, the FRET effectively occurs, because of their distant dependent characteristic. However, there are no reports concerning FRET with one dimensional (1D) nanomaterial. We have successfully prepared the PMMA nanotubes using vapor deposition polymerization as the platform of FRET. The dye-PMMA composite nanofiber has also been produced without phase separation and any deterioration of properties of the dyes. The PMMA 1D nanocomposite doped two dyes with great spectral overlap between donor and acceptor displayed FRET property.

• 한국정보디스플레이학회:학술대회논문집
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• 2005.07b
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• pp.1313-1316
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• 2005

In the present paper, it was investigated that adhesion layer on gate insulator could affect the electrical characteristics for the organic thin film transistors (OTFTs). The polyimide (PI) as organic adhesion layer was fabricated by using the vapor deposition polymerization (VDP) processing . It was found that electrical characteristics improved comparing OTFTs using adhesion layer to another. We researched adhesion layer as a function of thickness. For inverted-staggered top contact structure, field effect mobility, threshold voltage, and on-off current ratio of OTFTs using adhesion layer of PI 15 nm thickness on the gate insulator with a thickness of 0.2 ${\mu}m$ were about 0.5 $cm^2/Vs$, -0.8 V, and $10^6$, respectively.

• Proceedings of the KIEE Conference
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• 1996.07c
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• pp.1639-1641
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• 1996

Polyirnide thin films were fabricated an using vapor deposition polymerization apparatus, and their FT-IR and TGA characteristics were investigated. The peaks of $720cm^{-1}$ and $1380cm^{-1}$ show C=O stretch mode and C-N stretch mode, and that of the cured polyimide at $300^{\circ}C$ were saturated. TGI(Thormogravi metric index) was showed at $459^{\circ}C$ from reaserch of thermal resistivity characteristics by TGA.

• 한국정보디스플레이학회:학술대회논문집
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• 2002.08a
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• pp.770-772
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• 2002

A new dry-processing method of organic gate dielectric film in field-effect transistors (FETs) was proposed. The method use vapor deposition polymerization (VDP) that is continuous and low temperature process. It has the advantages of shadow mask patterning and dry processing in flexible low-cost large area applications. Here, 80 nm-thick Al as a gate electrode was evaporated through shadow mask. Gate insulators used two different polyimides. The one material was 4,4'-oxydiphtahlic anhydride (ODPA) and 4,4'-oxydianiline (ODA). Another was 2,2-bis(3,4-dicarboxyphenyl) Hexafluoropropane Dianhydride (6FDA) and 4,4' -oxydianiline (ODA). These were co-deposited by high-vaccum thermal-evapora and cured at 150 $^{\circ}C$ for 1 hour, respectively. Pentacene as a semiconductor and 100 nm-thick Au as a source and drain electrode were evaporated through shadow mask.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1996.05a
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• pp.154-157
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• 1996

The thin films are fabricated by VDPM and its heat resistant characteristics are investigated using Thermogravimetry. About polyimide, there is a wide difference between 5% weight loss temperature of TG curve and 20,000hr. of life time by methode of ASTM D2307. Therefore, TGI can be obtained by thermogravimetric analysis of NEMA std. pub. NOREI-1974. The TGI was got 670, 674 and 585 at 20$^{\circ}C$, 40$^{\circ}C$ and 70$^{\circ}C$, respectively.

• Proceedings of the KIEE Conference
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• 1997.07d
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• pp.1552-1554
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• 1997

In this paper, thin films of PI were fabricated VDPM of dry processes which are easy to control the film's thickness and hard to pollute due to volatile solvents. From FT-IR, PAA thin films fabricated by VDP were changed to PI thin films by thermal curing. From AFM and ellipsometer experimental, the higher curing temperature is, the films thickness decreases and reflectance increases. Therefore, PI could be fabricated stable by increasing curing temperature.