• 한국결정성장학회지
• /
• 제18권1호
• /
• pp.10-14
• /
• 2008

GaN nanowires는 수평 VPE법으로 합성 되었다. 본 실험에서는 source와 기판과의 거리가 합성된 GaN nanowires의 형상에 미치는 영향에 대하여 실험하였다. GaN nanowires는 $950^{\circ}C$ 온도에서 Ar 과 $NH_3$ 가스가 각각 1000, 50 sccm 의 유량에서 합성되었다. 합성된 GaN nanowires의 단면형태는 삼각형의 모양을 가졌으며, GaN nanowires의 길이는 200에서 500 nm 정도 였다. 합성된 GaN nanowires의 모양은 FESEM 으로 확인하였고, XRD 분석을 통하여 그 구조가 wurzite 구조인 것을 확인하였다. 또한, HRTEM 사진과 SAED 패턴을 통하여 합성된 GaN nanowires의 표면과 구조를 분석하였다. 성장된 GaN nanowires의 광학적 특성은 PL분석을 통하여 이루어졌다.

• 한국결정성장학회지
• /
• 제14권2호
• /
• pp.50-57
• /
• 2004

Mercurous Bromide ($Hg_2Br_2$) crystals hold promise for many acousto-optic and opto-electronic applications. This material is prepared in closed ampoules by the physical vapor transport (PVT) growth method. We investigate the effects of solutal convection on the crystal growth rate in a horizontal configuration for diffusive-convection conditions and purely diffusion conditions achievable in a low gravity environment. Our results show that the growth rate is decreased by a factor of one-fourth with a ten reduction of gravitational acceleration near y = 2.0 cm. For 0.1 $g_O$ the growth rate pattern exhibits relatively flat which is intimately related to diffusion-dominated processes. The growth rate nonuniformity is regardless of aspect ratio across the interfacial positions from 0 to 1.5. Also, the effect of a factor of the ten reduction in the gravitational acceleration is same to both Ar = 5 and 2. The enlargement in the molecular weight of B from 50 to 500 by a factor 4 causes a decrease in the maximum growth rate by the same factor, indicative of the effect of solutal gradients.

• 한국결정성장학회:학술대회논문집
• /
• 한국결정성장학회 1997년도 Proceedings of the 13th KACG Technical Meeting `97 Industrial Crystallization Symposium(ICS)-Doosan Resort, Chunchon, October 30-31, 1997
• /
• pp.39-43
• /
• 1997

Mercurous chloride (Hg$_2$Cl$_2$) has many advantages in its applications to acousto-optic, and opto-electronic devices because it has the unique properties of a broad transmisson range, well into the far infra-red, a low acoustic velocity, a large birefringence, and a high acousto-optic figure of merit[1]. Hg$_2$Cl$_2$ has a high vapor pressure, hence single crystals are usually grown by physical vapor transport(PVT) method in closed silica glass ampoules. We discuss the application of the laser Doppler velocimetry to measure the flow field inside a closed ampoule. The experimental results, are discussed its relationship to computational model and compared to their expectations.

• Carbon letters
• /
• 제15권3호
• /
• pp.151-161
• /
• 2014

Exceptional progress has been made with chemical vapor deposition (CVD) of graphene in the past few years. Not only has good monolayer growth of graphene been achieved, but large-area synthesis of graphene sheets has been successful too. However, the polycrystalline nature of CVD graphene is hampering further progress as graphene property degrades due to presence of grain boundaries. This review will cover factors that affect nucleation of graphene and how other scientists sought to obtain large graphene domains. In addition, the limitation of the current research trend will be touched upon as well.

• 한국결정성장학회지
• /
• 제26권2호
• /
• pp.84-88
• /
• 2016

PVT(Physical vapor transport)법을 이용하여 AlN 단결정을 성장시켰으며 유도 코일의 위치를 변화시켜가면서 핫존의 위치가 달라짐에 따라 변화하는 결과를 비교하였다. 그라파이트 도가니가 사용되었으며 그 규격은 ${\Phi}90{\times}H120$이었다. 온도는 $1950{\sim}2050^{\circ}C$이며 챔버 압력은 150에서 1 Torr까지 사용되었다. 또한 핫존은 실험 회차에 따라 변화를 주었으며 이 결과가 비교되었다. 핫존의 위치가 AlN 단결정 응축 위치에서부터 충분히 아래쪽(> 40 mm)인 경우 성장된 결정 사이즈는 다른 조건들에 비해 양호했지만(${\sim}300{\mu}m/hr$), 조건 재현성은 상당히 떨어졌다. 반대로 핫존과 AlN 성장 위치간의 거리가 가까워질수록 성장된 결정의 크기는 작아지고 결정의 핵이 생성되는 빈도는 낮아지면서 성장된 결정의 질의 안정성은 증가했다. 성장 속도와 품질 두 가지 면에서 초기 핫존 코일의 위치가 결정 성장 위치로부터 20 mm 정도일 때가 가장 우수했다. 핫존의 위치는 매우 민감한 결과를 주었고 이것에서 더 나아가 코일의 이동 속도 또한 최적으로 컨트롤 되어야만 최적의 성장 조건이 설정될 수 있다.

• 한국결정성장학회:학술대회논문집
• /
• 한국결정성장학회 1998년도 PROCEEDINGS OF THE 14TH KACG TECHNICAL MEETING AND THE 5TH KOREA-JAPAN EMGS (ELECTRONIC MATERIALS GROWTH SYMPOSIUM)
• /
• pp.173-176
• /
• 1998

Epitaxial Si layers were deposited on n- or p-type Si(100) substrates by hot-wall chemical vapor deposition (CVD) technique using the {{{{ {SiH }_{ 2} {Cl }_{2 } - {H }_{ 2} }}}}chemistry. Thermodynamic calculations if the Si-H-Cl system were carried out to predict the window of actual Si deposition procedd and to investigate the effects of process variables(i.e., the deposition temperature, the reactor pressure, and the source gas molar ratios) on the growth of epitaxial layers. The calculated optimum process conditions were applied to the actual growth runs, and the results were in good agreement with the calculation. The expermentally determined optimum process conditions were found to be the deposition temperature between 900 and 9$25^{\circ}C$, the reactor pressure between 2 and 5 Torr, and source gad molar ration({{{{ {H }_{2 }/ {SiH }_{ 2} {Cl }_{2 } }}}}) between 30 and 70, achieving high-quality epitaxial layers.

• 한국결정성장학회지
• /
• 제13권5호
• /
• pp.222-229
• /
• 2003

InP crystal is an increasingly important semiconductor material in the application of long-wave optoelectronic and high frequency devices. The equilibrium vapor pressure of phosphorus at the melting point of InP is so high that the synthesis process is very difficult. Liquid-encapsulated Czochralski (LEC) pulling from the melt at high pressure is a generally favored technique to grow InP single crystals. This technique involves two steps: the synthesis of polycrystalline powder and the growth of single crystal from the melt at high pressure. This article reviewed the latest development in the preparation of InP crystal and the evaluation on the crystal quality.

• 한국결정성장학회지
• /
• 제27권2호
• /
• pp.80-88
• /
• 2017

In this research a time dependent thermal and solutal convection was computationally investigated for the physical vapor transport of the mixture of $Hg_2Cl_2-I_2$ system with for the convective regime from thermal Rayleigh number of $2.16{\times}10^6$ up to $1.7{\times}10^7$ with marching time to a steady state problem. With time marching, the convective cells are decreased for the thermal Rayleigh number of $2.16{\times}10^6$, and increased for the thermal Rayleigh number of $1.7{\times}10^7$. The convective flow structures are found to be essentially time independent on the horizontal orientation of the enclosure with respect to the gravity vector, and on the other hand, time dependent on the vertical orientation of the enclosure with respect to the gravity vector.

• 한국결정성장학회지
• /
• 제11권3호
• /
• pp.106-111
• /
• 2001

The freestanding GaN substrates were grown by hydride vapor phase epitaxy (HVPE) on (0001) sapphire substrate and prepared by using laser induced lift-off. After a mechanical polishing on both Ga and N-surfaces of GaN films with 100$\mu\textrm{m}$ thick, their polarities have been investigated by using chemical etching in phosphoric acid solution, 3 dimensional surface profiler and Auger electron spectroscopy (AES). The composition of the GaN film measured by AES indicted that Ga and N terminated surfaces have the different N/Ga peak ratio of 0.74 and 0.97, respectively. Ga-face and N-face of GaN revealed quite different chemical properties: the polar surfaces corresponding to (0001) plane are resistant to a phosphoric acid etching whereas N-polar surfaces corresponding to(0001) are chemically active.

• 한국결정성장학회지
• /
• 제22권5호
• /
• pp.213-217
• /
• 2012

Carbon coils could be synthesized on nickel catalyst layer-deposited silicon oxide substrate using $C_2H_2$ and $H_2$ as source gases under thermal chemical vapor deposition system. By the incorporation of $SF_6$ additive in cyclic modulation manner, the dominant formation of the nanosized carbon coils could be achieved with maintaining the minimized sulfur additive amount. The geometry variation of the as-grown carbon coils, such as linear type, microsized coil type, wavelike nanosized coil type, and nanosized coil type, were investigated according to the different cyclic modulation manner of $SF_6$ flow. $SF_6$ gas incorporation develops the coil-type geometry. Furthermore, the higher flow rate of $SF_6$ gas increased the amount of the nanosized carbon coils. The slightly increased etching ability by $SF_6$ addition seems to be the cause for these results.