• Journal of the Korean Crystal Growth and Crystal Technology
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• v.24 no.1
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• pp.41-45
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• 2014

We have investigated the passivation property of $SiN_x$ and $SiO_2$ thin films formed using various process conditions for the application of crystalline Si solar cells. An increase in the thickness of $SiN_x$ deposited using plasma enhanced chemical vapor deposition (PECVD) led to the improvement of passivation quality. This could be associated with the passivation of Si dangling bonds by hydrogen atoms which were supplied during PECVD deposition. The $SiO_2$ thin films grown using dry oxidation process exhibited better passivation behavior than those using wet oxidation process, implying the dry oxidation process was more effective in the formation of high quality $SiO_2$ thin films. The relative effective life time gradually decreased with increasing dry oxidation temperature. Such a degradation of passivation behavior could be attributed to the increase in interface trap density caused by thermal damages.

• Bulletin of the Korean Chemical Society
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• v.28 no.4
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• pp.533-537
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• 2007

This paper describes the heteroepitaxial growth of single-crystalline 3C-SiC (cubic silicon carbide) thin films on Si (100) wafers by atmospheric pressure chemical vapor deposition (APCVD) at 1350 oC for micro/nanoelectromechanical system (M/NEMS) applications, in which hexamethyldisilane (HMDS, Si2(CH3)6) was used as a safe organosilane single-source precursor. The HMDS flow rate was 0.5 sccm and the H2 carrier gas flow rate was 2.5 slm. The HMDS flow rate was important in obtaing a mirror-like crystalline surface. The growth rate of the 3C-SiC film in this work was 4.3 μm/h. A 3C-SiC epitaxial film grown on the Si (100) substrate was characterized by X-ray diffraction (XRD), transmission electron microscopy (TEM), reflection high energy electron diffraction (RHEED), atomic force microscopy (AFM), X-ray photoelectron spectroscopy (XPS) and Raman scattering, respectively. These results show that the main chemical components of the grown film were single-crystalline 3C-SiC layers. The 3C-SiC film had a very good crystal quality without twins, defects or dislocations, and a very low residual stress.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.10 no.1
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• pp.5-12
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• 2000

As a semiconductor material for electronic devices operated under extreme environmental conditions, silicon carbides (SiCs) have been intensively studied because of their excellent electrical, thermal and other physical properties. The growth characteristics of single- crystalline 6H-SiC homoepitaxial layers grown by a thermal chemical vapor deposition (CVD) were investigated. Especially, the successful growth condition of 6H-SiC homoepitaxial layers using a SiC-uncoated graphite susceptor that utilized Mo-plates was obtained. The CVD growth was performed in an RF-induction heated atmospheric pressure chamber and carried out using off-oriented ($3.5^{\circ}$tilt) substrates from the (0001) basal plane in the <110> direction with the Si-face side of the wafer. In order to investigate the crystallinity of grown epilayers, Nomarski optical microscopy, transmittance spectra, Raman spectroscopy, XRD, Photoluninescence (PL) and transmission electron microscopy (TEM) were utilized. The best quality of 6H-SiC homoepitaxial layers was observed in conditions of growth temperature $1500^{\circ}C$ and C/Si flow ratio 2.0 of $C_3H_8$ 0.2 sccm & $SiH_4$ 0.3 sccm.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.20 no.3
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• pp.113-116
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• 2010

We report on the growth and characteristics of the structural and optical properties of InGaN nano-structures doped with antimony (Sb) as a catalyst. The use of catalyst has been explored to modify the growth and defect generation during strained layer heteroepitaxial growth. We performed the growth of the InGaN nano-structures on c-sapphire substrates using mixed-source hydride vapor phase epitaxy (HVPE). The characteristic of samples was measured by scanning electron microscope (SEM) and photoluminescence (PL). The aligning direction of c-axis of the InGaN nano-structures was changed from vertical to parallel or inclined to the surface of substrates when the Sb was added as a catalyst. The indium composition was estimated about 3.2% in both cases of with or without the addition of Sb in the InxGal-xN structures. From the results of InGaN nano-structures formed with the addition of Sb, we can expect the performance of optical devices would be more improved by reduced piezo-electric field if we use the InGaN nano-structures of which c-axes are aligned parallel to the substrates as an active layer.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.19 no.4
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• pp.159-164
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• 2009

We fabricated 40 nm-thick cobalt silicide ($CoSi_2$) as a buffer layer, on p-type Si(100) and Si(111) substrates to investigate the possibility of GaN epitaxial growth on $CoSi_2$/Si substrates. We deposited GaN using a HVPE (hydride vapor phase epitaxy) with two processes of process I ($850^{\circ}C$-12 minutes + $1080^{\circ}C$-30 minutes) and process II ($557^{\circ}C$-5 minutes + $900^{\circ}C$-5 minutes) on $CoSi_2$/Si substrates. An optical microscopy, FE-SEM, AFM, and HR-XRD (high resolution X-ray diffractometer) were employed to determine the GaN epitaxy. In case of process I, it showed no GaN epitaxial growth. However, in process II, it showed that GaN epitaxial growth occurred. Especially, in process II, GaN layer showed selfaligned substrate separation from silicon substrate. Through XRD ${\omega}$-scan of GaN <0002> direction, we confirmed that the combination of cobalt silicide and Si(100) as a buffer and HVPE at low temperature (process II) was helpful for GaN epitaxy growth.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.29 no.6
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• pp.308-316
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• 2019

Electron beam physical vapor deposition (EBPVD) is a conventional method to fabricate thermal barrier coating (TBC) of high temperature airfoil engine parts, such as blade etc. for its high temperature structural stability from the nature of columnar growth behavior. For the high quality of TBC by EBPVD, the structural factors, such as growth behavior, thickness uniformity and so on, should be managed to obtain the coating which satisfied the required specifications of usable level of mechanical and thermal properties. In this study, the growth behavior and structure variations of 7YSZ (7 wt% yttria stabilized zirconia) coatings with different configurational deposition parameters for the specimens which have turbine blade shape mock-up were investigated. Growth behavior of coatings were studied by comparing computational modeling of evaporation behavior with actual deposition process using e-beam source.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.22 no.4
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• pp.190-193
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• 2012

Transparent diamond-like carbon (DLC) films were synthesized on glass using radio frequency plasma enhanced chemical vapor deposition method from the gas mixture of $CH_4$, $SiH_4$ and Ar. The pressure, the rf-power, $CH_4/SiH_4/Ar$ ratio, and the deposition time were 0.1Torr, 100W, 20 : 1 : 1, and 20 min, respectively. The optical transmittances of DLC-deposited glass and uncoated glass were compared with each other in the visible light regions. The DLC-deposited glass showed transmittance of approximately 83 % and 95 % as compared to the uncoated glass for the wavelength of 380 nm and 500 nm, respectively. The hardness and roughness of DLC-coated glass have been measured by nanoindentation and AFM, respectively. The DLC-coated glass showed a little less or similar optical transmittance compared to the uncoated glass, while the hardness of DLC-coated glass was 2.5 times higher than that of the uncoated glass. The deposited DLC film had the very smooth surface and was thicker than 150 nm after deposition for 20 min.

• Journal of the Korean Vacuum Society
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• v.14 no.4
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• pp.222-228
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• 2005

Undoped GaN epitaxial layer was grown on c-plane sapphire substrate by a two-step growth with metalorganic chemical vapor deposition(MOCVD). We have investigated the effects of the variation of final growth temperature on surface morphology, roughness, crystal quality, optical property, and electrical property In a horizontal MOCVD reactor, the film was grown at 300 Tow low-pressure with a fixed nucleation temperature of $500^{\circ}C$, varing the final growth temperature from $850\~1050^{\circ}C$ . The undoped GaN epilayers were characterized by atomic force microscopy, high-resolution x-ray diffractometer, photoluminescence, and Hall effect measurement.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.27 no.2
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• pp.89-93
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• 2017

GaN single crystals were grown by controlling of various processing parameters such as growing temperature, V/III ratio and growing rate. We optimized thickness of bulk GaN single crystal by analyzing defect of surface and inside of the GaN single crystal for application to high brightness and power device. 2-inch bulk GaN single crystals were grown by HVPE (hydride vapor phase epitaxy) on sapphire and their thickness was 0.3~7.0 mm. Crystal structure of the grown bulk GaN was analyzed by XRD (X-ray diffraction). The surface characteristics of the grown bulk GaN were observed by OM (optical microscope) and SEM (scanning electron microscopy) with measuring EPD (etch pits density) of the GaN crystals.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.26 no.6
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• pp.215-219
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• 2016

Vanadium-doped SiC crystals have been grown by using a porous graphite inner crucible filled with vanadium carbide (VC) and by using a porous graphite plate and SiC + VC powders, respectively. Semi-insulating SiC crystals were grown onto the 6H-SiC seed crystals by PVT (Physical Vapor Transport) method. The grown crystals were indicated to be 6H-SiC polytype by XRD. As result of SIMS analysis, vanadium-rich precipitates were observed when the vanadium concentration was relatively higher than the maximum solubility of vanadium ($3-5{\times}10^{17}cm^{-3}$) in vanadium-doped SiC crystals, which resulted in degradation of crystal quality.