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http://dx.doi.org/10.6111/JKCGCT.2016.26.6.215

Vanadium-doped semi-insulating SiC single crystal growth by using porous graphite  

Lee, Dong-Hun (Department of Advanced Materials Engineering, Dong-Eui University)
Kim, Hwang-Ju (Department of Advanced Materials Engineering, Dong-Eui University)
Kim, Young-Gon (Department of Advanced Materials Engineering, Dong-Eui University)
Choi, Su-Hun (Department of Advanced Materials Engineering, Dong-Eui University)
Park, Mi-Seon (Department of Advanced Materials Engineering, Dong-Eui University)
Jang, Yeon-Suk (Department of Advanced Materials Engineering, Dong-Eui University)
Lee, Won-Jae (Department of Advanced Materials Engineering, Dong-Eui University)
Jung, Kwang-Hee (Sapphire Technology)
Kim, Tae-Hee (Sapphire Technology)
Choi, Yi-Sik (Sapphire Technology)
Publication Information
Journal of the Korean Crystal Growth and Crystal Technology / v.26, no.6, 2016 , pp. 215-219 More about this Journal
Abstract
Vanadium-doped SiC crystals have been grown by using a porous graphite inner crucible filled with vanadium carbide (VC) and by using a porous graphite plate and SiC + VC powders, respectively. Semi-insulating SiC crystals were grown onto the 6H-SiC seed crystals by PVT (Physical Vapor Transport) method. The grown crystals were indicated to be 6H-SiC polytype by XRD. As result of SIMS analysis, vanadium-rich precipitates were observed when the vanadium concentration was relatively higher than the maximum solubility of vanadium ($3-5{\times}10^{17}cm^{-3}$) in vanadium-doped SiC crystals, which resulted in degradation of crystal quality.
Keywords
Silicon carbide; SiC; PVT; Semi-insulating; Vanadium; Porous graphite;
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