• 태양에너지
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• 제18권2호
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• pp.31-49
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• 1998

본 고에서는 지금까지 연구 개발 된 제반 태양열 냉방시스템의 개요 및 원리와 기술현황에 대하여 소개하였다. 소개된 기술은 $LiBr-H_2O,\;H_2O-NH_3,\;CaCl_2-NH_3$을 이용한 태양열 흡수식 냉방시스템; 활성탄, 실리탄, 실리카겔 등을 이용하는 제습냉방(desiccant cooling)시스템; Ranking engine을 이용하는 증기압축식 냉방시스템; $Zeolite-H_2O$, 실리카겔-$H_2O$, 실리카겔-메탄을 활성탄-메탄을 등 "고체흡착제-냉매"를 이용한 태양열 흡착식 냉동시스템 등이다. 이들 기술들을 실용화 단계에 있거나 실용화 단계에는 못 미치나 상당한 기술개발이 되어있는 분야이다. 또한 각 시스템별 비교분석이 가능하도록 대략적인 효율과 장단점이 소개되었다.

• 한국진공학회지
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• 제12권S1호
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• pp.79-82
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• 2003

We present the investigation on P- and As-desorption process from the (001) InP surface in metal organic chemical vapor deposition using surface photoabsorption (SPA). The monochromatic SPA signal showed rapid initial increase to reach In-stabilized surface value after $PH_3$ was turned off, but in case of As-desorption, the signal showed clear existence of a metastable state after the $AsH_3$ was turned off. The SPA spectra at each stable surfaces were taken to confirm the interpretation. This result indicates that the As-desorption process should be understood as a two-step process, in contrast to P-desorption of one-step process.

• 한국전기전자재료학회논문지
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• 제21권4호
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• pp.362-367
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• 2008

We have Manufactured the low-k dielectric interlayer fabricated by plasma enhanced chemical vapor deposition (PECVD), The thin film of SiOCH is studied correlation between components and Dielectric constant. The precursor was evaporated and introduced with the flow rates from 16 sccm to 25 sccm by 1sccm step in the constant flow rate of 60 sccm $O_2$ in process chamber. The chemical characteristics of SiOCH were analyzed by measuring FT/IR absorption lines and obtained each dielectric constant measuring C-V. Then compare respectively. ILD of BTMSM/$O_2$ could have low dielectric constant about $k\sim2$, and react sensitively. Also dielectric constant could be decreased by the effects of decreasing $CH_3$ and growing Si-O-Si(C) after annealing process.

• 한국광학회:학술대회논문집
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• 한국광학회 2003년도 제14회 정기총회 및 03년 동계학술발표회
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• pp.202-203
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• 2003

여러 가지 원소의 동위원소 성분 분석은 생물학, 화학, 환경학, 연대학, 기후학 연구에 있어서 중요한 정보를 제공하는 유용한 수단이다. 동위원소 성분비를 측정하는 방법으로는 가스 동위원소 질량분석기를 이용한 방법이 사용되어 왔지만, 최근 다이오드 레이저의 발달과 함께 다이오드레이저 흡수분광법(TDLAS)이 개발되어 사용되고 있다. TDLAS 방법의 경우 질량분석기를 이용하는 방법에서는 측정이 불가능한 동일질량 분자의 동위원소 성분비를 측정할 수 있다. (중략)

• 한국광학회:학술대회논문집
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• 한국광학회 2003년도 제14회 정기총회 및 03년 동계학술발표회
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• pp.200-201
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• 2003

여러 가지 원소의 동위원소 성분 분석은 생물학, 화학, 환경학, 연대학, 기후학 연구에 있어서 중요한 정보를 제공하는 유용한 수단이다. 그 중에서도 수소, 산소, 그리고 탄소 동위원소 성분비의 정밀한 측정은 지구의 기후 변화 연구 등에 필수적인 수단이며, 가깝게는 식음료의 원산지 및 품질 확인에 이르기까지 다양하게 응용되고 있다 대표적으로 활용되고 있는 예를 보면 다음과 같다. 1. Authenticity Control and Detection of Adulteration： 쥬스류에 첨가제를 사용했는지의 여부를 확인할 수 있고, 포도주의 진품 여부를 확인할 수 있으며 원산지 확인도 가능하다. (중략)

• 한국세라믹학회지
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• 제23권4호
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• pp.55-61
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• 1986

Phosphosilicate glass(PSG) films have been used as fusable deposited dielectrics in silicon gate MOS integrated circuits. But in this experiment BPSG(borophosphosilicate glass) will be optimized for more efficient utilization of the reactants. The BPSG films were deposited on silicon wafers by the oxidation of the hydrides at 430$^{\circ}$C in conventional atmospheric-pressure chemical-vapor-deposition (CVD) systems. Physical and chemical properties of CVD BPSG films have been characterized both for as-deposited and for fused films The. relationship between deposited BPSG film composition and infra-red absorption solution etch rate and fusion temperature is discussed and examples of BPSG composition that can be fused at 900~95$0^{\circ}C$ and 800~85$0^{\circ}C$ are given. In addition to having lower fusion temperature than PSG films BPSG films have lower as-deposited intrinsic tensile stress and low aqueous chemical etch rate they have been considered for applications where these characteristics are advantageous.

• 반도체디스플레이기술학회지
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• 제7권1호
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• pp.41-45
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• 2008

We studied the electrical characteristics of low-k SiOCR interlayer dielectric(ILD) films fabricated by plasma enhanced chemical vapor deposition (PECVD). The precursor bis-trimethylsilylmethane (BTMSM) was introduced into the reaction chamber with the various flow rates. The absorption intensities of Si-O-$CH_x$, bonding group and Si-$CH_x$, bonding group changed synchronously for the variation of precursor flow rate, but the intensity of Si-O-Si(C) responded asynchronously with the $CH_x$, combined bonds. The SiOCH films revealed ultra low dielectric constant around 2.1(1) and reduced further below 2.0 by heat treatments.

• 대한전기학회:학술대회논문집
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• 대한전기학회 1987년도 전기.전자공학 학술대회 논문집(I)
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• pp.513-516
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• 1987

Hydrogenated amorphous silicon (a-Si:H) films have been deposited, for thye first time, by a remote plasma chemical vapor deposition. The hydrogen radical play a important role to control the deposition rate, The bonded hydrogen content to silicon is independent of hydrogen partial pressure in the plasma. Optical gap of deposited a-Si:H lies between 1.7eV and 1.8eV and all samples have sharp absorption edge. B-doped a-Si:H films by a RPECVD has a high doping efficiency compared with plasma CVD. The Fermi level of 100ppm B-doped film lies at 0.5eV above valence band edge.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 1997년도 추계학술대회 논문집
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• pp.525-528
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• 1997

In this study, Eu(TTA)$_3$(phen) was synthesized and its films were prepared by vapor deposition method. Its films were characterized by UV-Vis absorption spectroscopy, Atomic Force Microscopy(AFM) and Photoluminescence(PL) measurements. Their electroluminescent(EL) characteristics were investigated by PL measurements, where a cell structure of glass substrate/ITO/Eu(TTA)$_3$(phen)/Al was employed. It was found that its films were well prepared without any decomposition and the film thickness could be controlled by adjusting the amount of Eu(TTA)$_3$(phen) in a boat. The EL spectrum of these films was almost the same as that of PL spectrum of these films.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2009년도 제38회 동계학술대회 초록집
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• pp.178-178
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• 2010

We have deposited aluminum-doped ZnO thin films on borosilicate glass by atomic layer deposition. Diethylzinc (DEZ) and dimethylaluminum isopropoxide (DMAIP) were used as the metal precursor and the Al-dopant, respectively. Water was used as an oxygen source. DMAIP was successfully used as an aluminum precursor for chemical vapor deposition and ALD. All deposited films showed n-type conduction. The resistivity decreased to a minimum and then increased with increasing the aluminum content. The carrier concentration increased and the carrier mobility decreased with increasing the DMAIP to DEZ pulse ratio. The average optical transmittance was nearly 80 % in the visible part of the spectrum. The absorption edge moved to the shorter wavelength region with increasing the DMAIP to DEZ pulse ratio. Our results indicate that DMAIP is suitable for Al doping of ZnO films.