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Monitoring of III-V semiconductor surface by In-situ Surface PhotoAbsorption  

Kim, T. J. (Department of Physics and Research Institute of Basic Sciences, Kyung Hee University)
Kim, Y. D. (Department of Physics and Research Institute of Basic Sciences, Kyung Hee University)
H. Hwang (School of Materials Science and Engineering and ISRC, Seoul National University)
E. Yoon (School of Materials Science and Engineering and ISRC, Seoul National University)
Publication Information
Journal of the Korean Vacuum Society / v.12, no.S1, 2003 , pp. 79-82 More about this Journal
Abstract
We present the investigation on P- and As-desorption process from the (001) InP surface in metal organic chemical vapor deposition using surface photoabsorption (SPA). The monochromatic SPA signal showed rapid initial increase to reach In-stabilized surface value after $PH_3$ was turned off, but in case of As-desorption, the signal showed clear existence of a metastable state after the $AsH_3$ was turned off. The SPA spectra at each stable surfaces were taken to confirm the interpretation. This result indicates that the As-desorption process should be understood as a two-step process, in contrast to P-desorption of one-step process.
Keywords
surface photoabsorption; P-desorption; As-desorption;
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