• 한국표면공학회지
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• 제44권2호
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• pp.39-43
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• 2011

Amorphous silicon thin film was deposited by Plasma Enhanced Chemical Vapor Deposition (PECVD). Each films were prepared in different dilution in the chamber gas. As a result, silicon crystallites and crystal volume fraction was increased with raising the hydrogen dilution in the gas and optical band gap was decreased. Increasement of the hydrogen contents in the chamber affected on surface roughness. In this study, thickness and surface roughness of the a-Si thin film by different hydrogen dilution was investigated by various techniques.

• 설비공학논문집
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• 제13권6호
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• pp.514-523
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• 2001

The thermal performance characteristics of gas-loaded heat pipe(GLHP) were investigated by using transient diffuse-front model. Numerical evaluation of the GLHP is made with water as a working fluid and Nitrogen as control gas in the stainless steel tube. The transient vapor temperature and wall temperature were obtained. It is found that the temperature profiles and gas mole fraction distribution have been mainly influence by the diffusion between working fluid and noncondensable control gas in the condenser of GLHP. It is also found that he large power input make the diffusion region smaller.

• 한국정보디스플레이학회:학술대회논문집
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• 한국정보디스플레이학회 2009년도 9th International Meeting on Information Display
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• pp.1568-1570
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• 2009

Nanocrystalline silicon thin films were deposited using an internal-type inductively coupled plasma-chemical vapor deposition at room temperature by varying the bias power to the substrate and the structural characteristics of the deposited thin film were investigated. The result showed that the crystalline volume fraction was decreased with the increase of bias power. At the low bias power range of 0~60 W, the compress stress in the deposited thin film was in the range of -34 ~ -77 Mpa which is generally lower than the residual stress observed for the nanocrystalline silicon thin films deposited by capacitively coupled plasma.

• Korean Chemical Engineering Research
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• 제55권2호
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• pp.275-278
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• 2017

Heterogeneous semiconductor composites have been widely used to establish high-performance microelectronic or optoelectronic devices. During a deposition of silicon atoms on silicon/germanium compound surfaces, germanium (Ge) atoms are segregated from the substrate to the surface and are mixed in incoming a silicon layer. To suppress Ge segregation to obtain the interface sharpness between silicon layers and silicon/germanium composite layers, approaches have used silicon hydride gas species. The hydrogen atoms can play a role of inhibitors of silicon/germanium exchange. However, there are few kinetic models to explain the hydrogen effects. We propose using segregation probability which is affected by hydrogen atoms covering substrate surfaces. We derived the model to predict the segregation probability as well as the profile of Ge fraction through layers by using chemical reactions during silicon deposition.

• 한국분말야금학회:학술대회논문집
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• 한국분말야금학회 2006년도 Extended Abstracts of 2006 POWDER METALLURGY World Congress Part 1
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• pp.420-421
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• 2006

In the present study, ultrafined Zr-V-Fe based alloy powder prepared by a plasma arc discharge process with changing process parameters. The chemical composition of synthesized powder was strongly influenced by the process parameters, especially the hydrogen volume fraction in the powder synthesis atmosphere. The synthesized powder had an average particle size of 50 nm. The synthesized Zr-V-Fe based particles had a shell-core structure composed of metal in the core and oxidse in the shell.

• International Journal of Naval Architecture and Ocean Engineering
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• 제12권1호
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• pp.479-490
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• 2020

The hydrodynamic characteristic of transonic motion projectiles with different head diameters are investigated by numerical simulation. Compressibility effect in liquid-phase water are modeled using the Tait state equation. The result shows that with increasing of velocity the compression waves transfer to shock waves, which cause the significant increasing of pressure and decreasing the dimensions of supercavities. While the increasing of head diameter, the thickness, the vapor volume fraction and the drag coefficient of supercavities are all enhanced, which is conducive to the stability of transonic-speed projectiles. The cavity dynamics of the different head projectiles are compared, and the results shows when Mach number is in high region, the truncated cone head projectile is enveloped by a cavity which results in less drag and better stability.

• 폴리머
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• 제27권4호
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• pp.340-348
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• 2003

변형된 Stud-pull 시험 방법을 통해 탄소강 기재 위에 발포된 폴리우레탄의 접착 강도를 측정하였다. 아연인산으로 처리한 표면이 거친 탄소강 위에서 발포시킨 폴리우레탄의 접착 강도는 0.95 kN으로서 표면이 매끈한 양극산화된 탄소강 위에서 발포된 폴리우레탄의 접착 강도인 0.38 kN 보다 높게 나타남으로서 그 타당성이 입증되었다. 이 시험법을 여러 온도로 미리 가열된 탄소강 기재 위에서 폴리우레탄을 발포 접합시킨 시료들에 적용한 결과, 6$0^{\circ}C$ 이상으로 미리 가열된 금속 기재 위에서 발포된 폴리우레탄은 높은 접착 강도를 나타내었다. 또한 위의 시료를 수증기를 흡착하는 용기에 노출시켜 접착 강도를 측정하였는데 4$0^{\circ}C$ 보다 낮거나 7$0^{\circ}C$의 높은 온도로 유지된 금속 기재 위에서 발포된 폴리우레탄의 접착 강도는 많이 감소하였다. HCFC-141b와 HFC-245fa로 발포된 폴리우레탄의 접착력을 비교하였는데 HFC-245fa로 발포된 시료의 접착력이 0.03 kN 만큼 낮았으며 두 시료를 수증기에 노출시 HFC-245fa로 발포된 시료는 계면 근처에 존재하는 가스로 채워진 빈공간 영역의 적은 면적 비율로 인해 접착력이 거의 그대로 유지되었다. 이런 현상들은 기재의 온도, 기재의 표면 처리 방법, 발포제의 종류에 따라 금속 기재와 고분자와의 계면 근처에서의 미세조직학적인 차이에 의한 결과로 판단된다.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2012년도 제43회 하계 정기 학술대회 초록집
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• pp.254-255
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• 2012

Interest in nano-crystalline silicon (nc-Si) thin films has been growing because of their favorable processing conditions for certain electronic devices. In particular, there has been an increase in the use of nc-Si thin films in photovoltaics for large solar cell panels and in thin film transistors for large flat panel displays. One of the most important material properties for these device applications is the macroscopic charge-carrier mobility. Hydrogenated amorphous silicon (a-Si:H) or nc-Si is a basic material in thin film transistors (TFTs). However, a-Si:H based devices have low carrier mobility and bias instability due to their metastable properties. The large number of trap sites and incomplete hydrogen passivation of a-Si:H film produce limited carrier transport. The basic electrical properties, including the carrier mobility and stability, of nc-Si TFTs might be superior to those of a-Si:H thin film. However, typical nc-Si thin films tend to have mobilities similar to a-Si films, although changes in the processing conditions can enhance the mobility. In polycrystalline silicon (poly-Si) thin films, the performance of the devices is strongly influenced by the boundaries between neighboring crystalline grains. These grain boundaries limit the conductance of macroscopic regions comprised of multiple grains. In much of the work on poly-Si thin films, it was shown that the performance of TFTs was largely determined by the number and location of the grain boundaries within the channel. Hence, efforts were made to reduce the total number of grain boundaries by increasing the average grain size. However, even a small number of grain boundaries can significantly reduce the macroscopic charge carrier mobility. The nano-crystalline or polymorphous-Si development for TFT and solar cells have been employed to compensate for disadvantage inherent to a-Si and micro-crystalline silicon (${\mu}$-Si). Recently, a novel process for deposition of nano-crystralline silicon (nc-Si) thin films at room temperature was developed using neutral beam assisted chemical vapor deposition (NBaCVD) with a neutral particle beam (NPB) source, which controls the energy of incident neutral particles in the range of 1~300 eV in order to enhance the atomic activation and crystalline of thin films at room temperature. In previous our experiments, we verified favorable properties of nc-Si thin films for certain electronic devices. During the formation of the nc-Si thin films by the NBaCVD with various process conditions, NPB energy directly controlled by the reflector bias and effectively increased crystal fraction (~80%) by uniformly distributed nc grains with 3~10 nm size. The more resent work on nc-Si thin film transistors (TFT) was done. We identified the performance of nc-Si TFT active channeal layers. The dependence of the performance of nc-Si TFT on the primary process parameters is explored. Raman, FT-IR and transmission electron microscope (TEM) were used to study the microstructures and the crystalline volume fraction of nc-Si films. The electric properties were investigated on Cr/SiO2/nc-Si metal-oxide-semiconductor (MOS) capacitors.

• 한국신재생에너지학회:학술대회논문집
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• 한국신재생에너지학회 2005년도 제17회 워크샵 및 추계학술대회
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• pp.561-566
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• 2005

Polycrystalline silicon films were deposited using hot wire CVD (HWCVD). The deposition of silicon thin films was approached by the theory of charged clusters (TCC). The TCC states that thin films grow by self-assembly of charged clusters or nanoparticles that have nucleated in the gas phase during the normal thin film process. Negatively charged clusters of a few nanometer in size were captured on a transmission electron microscopy (TEM) grid and observed by TEM. The negatively charged clusters are believed to have been generated by ion-induced nucleation on negative ions, which are produced by negative surface ionization on a tungsten hot wire. The electric current on the substrate carried by the negatively charged clusters during deposition was measured to be approximately $-2{\mu}A/cm^2$. Silicon thin films were deposited at different $SiH_4$ and $H_2$ gas mixtures and filament temperatures. The crystalline volume fraction, grain size and the growth rate of the films were measured by Raman spectroscopy, X-ray diffraction and scanning electron microscopy. The deposit ion behavior of the si1icon thin films was related to properties of the charged clusters, which were in turn controlled by the process conditions. In order to verify the effect of the charged clusters on the growth behavior, three different electric biases of -200 V, 0 V and +25 V were applied to the substrate during the process, The deposition rate at an applied bias of +25 V was greater than that at 0 V and -200 V, which means that the si1icon film deposition was the result of the deposit ion of charged clusters generated in the gas phase. The working pressures had a large effect on the growth rate dependency on the bias appled to the substrate, which indicates that pressure affects the charging ratio of neutral to negatively charged clusters. These results suggest that polycrystalline silicon thin films with high crystalline volume fraction and large grain size can be produced by control1ing the behavior of the charged clusters generated in the gas phase of a normal HWCVD reactor.

• 한국수자원학회논문집
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• 제54권10호
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• pp.779-793
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• 2021

총일차생산량은 물 스트레스와 환경 변수에 의해 크게 영향을 받는다. 총일차생산량과 환경변수의 상관관계는 Moderate Resolution Imaging Spectroradiometer (MODIS) 알고리즘과 process-based model에 적용되어 총일차생산량을 계산하는데 활용된다. 그러나 MODIS 알고리즘에서는 물 스트레스를 수증기압차이(vapor pressure deficit)로만 고려하고 있으며, process-based model에서도 제한된 변수만으로 물 스트레스를 표현하여 총일차생산량을 산출하고 있다. 본 연구에서는 에디 공분산 기법, MODIS 알고리즘, 그리고 Community Land Model 4 (CLM 4) 시뮬레이션 결과에서 얻어진 총일차생산량이 환경 변수와 가지는 상관관계를 평년과 가뭄연도를 대상으로 분석하였다. 물 스트레스를 대표하는 지수는 수증기압차이와 evaporative fraction (EF)가 사용되었다. 본 연구에서는 structural equation modeling (SEM)을 활용하여 환경 변수와 EF가 총일차생산량에 끼치는 영향을 수치화하여 평가하였다. SEM을 통해 상관성을 분석한 결과, 수증기압차이가 과소평가될 경우 MODIS 알고리즘과 CLM 4 시뮬레이션에서 생산된 총일차생산량이 수증기압차이로부터 받는 영향이 제한적임을 확인하였다. 에디 공분산 기법으로 산출한 총일차생산량의 상관성 분석 결과, 경작지에서는 관개작업으로 인해 수증기압차이가 총일차생산량에 끼치는 영향이 감소하였으나 MODIS와 CLM 4에서 산출된 총일차생산량 데이터는 이러한 관개작업의 영향을 설명하는데 제한적이었다. 본 연구결과는 MODIS와 CLM 4에서 산출된 총일차생산량의 특성을 이해하고 한계를 분석하는 연구에 도움을 줄 것으로 예상된다.