• Proceedings of the Korean Vacuum Society Conference
• /
• 1998.06a
• /
• pp.86-86
• /
• 1998

• Proceedings of the Korean Vacuum Society Conference
• /
• 1998.06a
• /
• pp.98-98
• /
• 1998

• Proceedings of the Korean Vacuum Society Conference
• /
• 2009.02a
• /
• pp.284.2-284.2
• /
• 2009

• Proceedings of the Korean Vacuum Society Conference
• /
• 2007.08a
• /
• pp.169-169
• /
• 2007

• Journal of the Korea Academia-Industrial cooperation Society
• /
• v.11 no.10
• /
• pp.3621-3625
• /
• 2010

Colored cubic-zirconia specimens made by skull melt process were annealed in vacuum at the temperature of $1200^{\circ}{\sim}1400^{\circ}C$ for 10~60 minutes to enhance the color. The three different colored specimens become darker and eventually are black as annealing temperature and time increase. Conventional gem stone grading method and XPS were employed to quantify the property change and to reveal the mechanism of the color change. Color was changed apparently but the hardness and apparent density did not vary with annealing. Based on XPS result, we concluded that the main cause of the color change in cubic zirconia might be the change of Y-O bonding energy state of $Y2_O_3$ phase-stabilizer by vacuum annealing.

• Journal of the Korea Academia-Industrial cooperation Society
• /
• v.12 no.5
• /
• pp.2267-2271
• /
• 2011

This study was focused on getting p-type copper-oxide thin-film semiconductors suitable for p-channel thin-film transistors. Vacuum thermal evaporation and thermal annealing were used to get copper-oxide thin-film semiconductor having properties adoptable as an active layer of thin-film transistors. n-type thin films having electron carrier density of about $10^{22}\;cm^{-3}$ before thermal annealing was converted to p-type thin films having hole carrier density of about $10^{16}\;cm^{-3}$ as the thermal annealing conditions were optimized.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 2010.03b
• /
• pp.17-17
• /
• 2010

Polycrystalline $CuInS_2$ thin films were performed from S/In/Cu Stacked elemental layer(SEL) method with post annealing. In thin method, the thin films were annealed in Vacuum of $10^{-3}$ torr or in S ambient. $CuInS_2$ thin films were manufctured by using the evaporation and the annealing with vacuum quartz furnace of sulfurization process was used in the vacuum chamber to the substrate temperature on the glass substrate the annealing temperature and characteristics thereof were investigated. The physical properties of the thin film were investigated under various fabrication conditions including the substrate temperature annealing time by XRD, FE-SEM, and Hall measurement system.

• Proceedings of the Korean Vacuum Society Conference
• /
• 2012.08a
• /
• pp.163-163
• /
• 2012

We observed strain evolution of P3HT crystals in P3HT:PCBM films and the effect of Al electrode on the evolution during real time annealing process. Based on simple assumptions, both relaxed lattice parameters and thermal expansion coefficient could be quantitatively determined. P3HT:PCBM films displayed tensile strain in as-prepared samples regardless of the presence of an Al layer. In the absence of Al layer, P3HT crystals showed only strain relaxation at an annealing temperature of $180^{\circ}C$. Meanwhile In the presence of an Al layer, the strain was relaxed and changed to compressive strain at around 120C annealing temperature, which indicated a tightening of the thiophene ring packing. These behaviors support the improved performance of devices fabricated by post annealing process.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
• /
• v.30 no.3
• /
• pp.180-184
• /
• 2017

In this study, we examine the electrical properties of diketopyrrolopyrrole (DPP) containing polymer semiconductors that have been reported to show high performance with ambipolar characteristics. We prepared three different DPP based polymer semiconductors (PDPPTPT, PDPP3T, and PDPP2T-TT) and fabricated organic thin film transistors (OTFTs) with ambipolar polymer semiconductors as an active layer. All three DPP polymers showed only p-type properties at initial measurements. However, after annealing in vacuum oven for 24 hours, it was found that the DPP based polymers have both p-type and n-type properties. It is speculated that the residual impurities supposedly regarded as a strong electron trap source were eliminated during the vacuum process.

• Journal of Korean Vacuum Science & Technology
• /
• v.6 no.3
• /
• pp.120-125
• /
• 2002

The aim of the present work is to optimized the annealing parameter in both front and back screen printed contacts realization on p-type multicrystalline silicon and with phosphorus diffused. The RTA treatments were carried out at various temperatures from 600 to 850$\^{C}$ and annealing time ranging from 3 min to 5 min in air, O$_2$and N$_2$ ambiance. The contacts parameters are obtained according to Transmission Line Model measurements. A good RTA cycle is obtained with a temperature plateau of 700$\^{C}$-750$\^{C}$ and annealing ambiance of air. Several processing parameters required for good cell efficiency are discussed with an emphasis placed on the critical role of the glass frit in the aluminum paste. A anamolus behaviour of Aluminum n-doping on p-type Si wafer, contact at high temperature have also been studied.