• Transactions on Electrical and Electronic Materials
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• v.13 no.5
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• pp.241-244
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• 2012

Antimony doped tin oxide (ATO) thin films on glass substrate were prepared by the chemical solution deposition (CSD) method, using sol-gel solution synthesized by non-alkoxide precursors and the sol-gel route. The crystallinity and electrical properties of ATO thin films were investigated as a function of the annealing condition (both annealing environments and temperatures), and antimony (Sb) doping concentration. Electrical resistivity, carrier concentration, Hall mobility and optical transmittance of ATO thin films were improved by Sb doping up to 5~8 mol% and annealing in a low vacuum atmosphere, compared to the undoped tin oxide counterpart. 5 mol% Sb doped ATO film annealed at $550^{\circ}C$ in a low vacuum atmosphere showed the highest electrical properties, with electrical resistivity of about $8{\sim}10{\times}10^{-3}{\Omega}{\cdot}cm$, and optical transmittance of ~85% in the visible range. Our research demonstrates the feasibility of low-cost solution-processed transparent conductive oxide thin films, by controlling the appropriate doping concentration and annealing conditions.

• Proceedings of the Korean Vacuum Society Conference
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• 2012.08a
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• pp.226-226
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• 2012

The electronic and electrical properties of nickel oxide (NiO) thin films were investigated by reflection electron energy loss spectroscopy (REELS), x-ray photoelectron spectroscopy (XPS), and Hall Effect measurements. REELS spectra revealed that the band gap of the NiO thin film was increased from 3.50 eV to 4.02 eV after annealing the sample at $800^{\circ}C$. Our XPS spectra showed that the amount of Ni2O3 decreased after annealing. The Hall Effect results showed that the doping type of the sample changed from n type to p type after annealing. The resistivity decreased drastically from $4.6{\times}10^3$ to $3.5{\times}10^{-2}$ ${\Omega}{\cdot}cm$. The mobility of NiO thin films was changed form $3.29{\times}10^3$ to $3.09{\times}10^5cm^2/V{\cdot}s$. Our results showed that the annealing temperature plays a crucial role in increasing the carrier concentration and the mobility which leads to lowering resistivity of NiO thin films.

• Proceedings of the Korean Vacuum Society Conference
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• 2016.02a
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• pp.318.1-318.1
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• 2016

Hafnium Oxide (HfOx) has been attracted as a promising gate dielectric for replacing SiO2 in gate stack applications. In this paper, Metal-Oxide-Semiconductor (MOS) capacitor with solution processed HfO2 high-k material as a dielectric were fabricated. The solvent using $HfOCl2{\cdot}8H2O$ dissolve in 2-Methoxy ethanol was prepared at 0.3M. The HfOx layers were deposited on p-type silicon substrate by spin-coating at $250^{\circ}C$ for 5 minutes on a hot plate and repeated the same cycle for 5 times, followed by annealing process at 350, 450 and $550^{\circ}C$ for 2 hours. When the annealing temperature was increased from 350 to $550^{\circ}C$, capacitance value was increased from 337 to 367 pF. That was resulted from the higher temperature of HfOx which have more crystallization phase, therefore dielectric constant (k) was increased from 11 to 12. It leads to the formation of dense HfOx film and improve the ability of the insulator layer. We confirm that HfOx layer have a good performance for dielectric layer in MOS capacitors.

• Journal of the Korean Vacuum Society
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• v.11 no.4
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• pp.212-217
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• 2002

A new technique for highly controllable trench corner rounding at the top and bottom of the trench using pull-back and hydrogen annealing has been developed and investigated. The pull-back process could control the trench corner rounding radius at the top comers of the trench. The silicon migration generated by hydrogen annealing at the trench coiners provided (111) and (311) crystal planes and gave a uniform gate-oxide thickness, resulting in high reliable trench DMOSFETs with highly breakdown voltages and low leakage currents. The breakdown voltage of a trench DMOSFET fabricated using hydrogen annealing was increased by 25% compared with a conventional DMOSFET. The reasonable drain current of 45.3 A was obtained when a gate voltage of 10 V was supplied. The on-resistance of the trench gate DMOSFET fabricated using the trench cell of 45,000 was about 55 m(at a gate voltage of 10 V under a drain current of 5 A.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2008.11a
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• pp.276-276
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• 2008

Transparent and conducting indium tin oxide (ITO) and ITO/Nickel/ITO(INI) multilayered films were prepared on glass substrates by a magnetron sputtering without intentional substrate heating. The RF(13.56MHz) and DC power were applied to ITO and Nickel target, respectively. The thickness of ITO, Ni and ITO films were kept constantly at 50, 5 and 45 nm. In order to consider the effect of post deposition vacuum annealing in vacuum on the physical and optoeletrical properties of INI films, optical transmittance, electrical resistivity, crystallinity of the films were analyzed. From the observed result, it may conclude that the optoelectrical properties of the INI films were dependent on the post deposition annealing. For the INI films annealed at $300^{\circ}C$, the films have a polycrystalline structure with (110), (200), (210), (211) and (300). The resistivity of the films were $4.0\times10^{-4}{\Omega}cm$ at room temperature. As the annealing($300^{\circ}C$), resistivity decreased to $2.8\times10^{-4}{\Omega}cm$. And also the optical transmittance decreased from 79 to 70 % at 550nm.

• Journal of the Korean Society for Heat Treatment
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• v.25 no.5
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• pp.239-243
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• 2012

$SnO_2$ thin films were prepared on the Si substrate by radio frequency (RF) magnetron sputtering and then post deposition vacuum annealed to investigate the effect of annealing temperature on the structural properties and hydrogen gas sensitivity of the films. The films that annealed at $300^{\circ}C$ show the higher sensitivity than the other films annealed at $150^{\circ}C$. From atomic force microscope observation, it is supposed that post deposition annealing promotes the rough surface and also, increase gas sensitivity of $SnO_2$ films for hydrogen gas. These results suggest that the vacuum annealed $SnO_2$ thin films at optimized temperatures are promising for practical high-performance hydrogen gas sensors.

• Journal of the Korean Vacuum Society
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• v.22 no.1
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• pp.20-25
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• 2013

ZnO:Al thin films deposited by RF magnetron sputtering were post-annealed and the electrical and optical properties of ZnO:Al thin films were investigated before and after anneling. We confirmed that the ZnO:Al thin film was affected by post-annealing temperature. As post-annealing temperature increases, crystallinity and transmittance in visible area (400~800 nm) of ZnO:Al thin films decreased. While sheet resistance of thin films increased sharply with increasing to $400^{\circ}C$. This result is due to reduce of carrier concentration caused by absorption of $O_2$ or $N_2$ at surface of thin film.

• Proceedings of the Korean Vacuum Society Conference
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• 2012.02a
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• pp.589-589
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• 2012

Indium sulfide thin films have been grown onto glass substrates using radio frequency magnetron sputtering at room temperature. The as-deposited film were annealed in nitrogen atmosphere at different temperatures of 100, 200, 300, 400 and $500^{\circ}C$ with an 1 h annealing time. The effect of annealing temperature on composition, structure, morphology and optical properties of the as-grown In2S3 films has been studied. The XRD results indicate that the as-deposited films are composed by a mixture of both cubic ${\alpha}$ and ${\beta}$ crystalline phases, with some fraction of tetragonal phase. The thermal annealing on the films produces the conversion of the cubic crystalline phases to the tetragonal ${\beta}$ one and a crystalline reorientation of the latter phase. The surface morphological analysis reveals that the films grown at $300^{\circ}C$ have an average grain size of ~ 58 nm. These films show a S/In ratio of 0.99. The optical band gap is found to be direct and the films grown at $300^{\circ}C$ shows a higher optical transmittance of 80% and an energy band gap of 2.52 eV.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1998.06a
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• pp.431-434
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• 1998

Platinum-Cobalt alloy thin films were deposited on Al$_2$O$_3$ substrate by r.f. cosputtering for RTD temperature sensors. We made Pt-Co alloy resistance patterns on the Al$_2$O$_3$ substrate by lift-off method and investigated the physical and electrical characteristics of these films under various conditions (the input power, working vacuum, annealing temperature, thickness of thin films) and also after annealing these films. At input power of Pt : 4.4 W/$\textrm{cm}^2$, Co : 6.91 W/$\textrm{cm}^2$, working vacuum on and annealing conditions of 1000 $^{\circ}C$ and 60 min, the resistivity and the sheet resistive thin films were 15 ${\mu}$$\Omega$$.$cm and 0.5 $\Omega$/$\square$, respectively. The TCR value of Pt-Co a films was measured with various thickness of thin films and annealing temperature. T TCR value is gained under condition 3000${\AA}$ of thin films thickness and 1000$^{\circ}C$ of temperature. These results indicate that Pt-Co alloy thin films have potentiality for the wide temperature ranges.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1997.11a
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• pp.335-338
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• 1997

Platinum-Cobalt alloy thin films were deposited on A1$_2$O$_3$substrate by magnetron cosputtering for RTD temperature sensors with wide temperature ranges. We made Pt-Co alloy resistance patterns on the A1$_2$O$_3$substrate by lift-off method and fabricated Pt-Co alley RTD temperature sensors by using Pt-wire, Pt-paste. We investigated the physical and electrical characteristics of theme films under various conditions, input power, working vacuum, annealing temperature and time, and also after annealing these films. The resistivity and sheet resistivity of these films were decreased with increasing the annealing temperature. At input power of Pt : 4.4 W/cm$^2$, Co : 6.91 W/cm$^2$, working vacuum of 10 mTorr and annealing conditions of 800$^{\circ}C$ and 60 min, the resistivity and sheet resistivity of Pt-Co thin films was 15${\mu}$$\Omega$$.$cm and 0.5$\Omega$/ , respectively, and the TCR value of Pt-Co alloy thin films with thickness of 3000${\AA}$ was 3740ppm/$^{\circ}C$ in the temperature range of 25∼600$^{\circ}C$. These results indicate that Pt-Co alloy thin films hove potentiality for the RTD with wide temperature ranges.