• Proceedings of the Korean Vacuum Society Conference
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• 2010.08a
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• pp.58-58
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• 2010

Reactive or unstable adsorbates are often difficult to study spectroscopically. They may have, for instance, resonance states lying close to the Fermi level, inducing them to desorb or decompose by the probe itself, low-energy tunneling electrons. In order to overcome this limitation, we developed a novel method, which we call x-ramp scan. The method sweeps the bias voltage, with the simutaneous scan along the imaging direction, in a constant current mode. This mapping yields the tip-height variation as a function of bias, or Z(V), at nominally always fresh surface. We applied this method to the investigation of methanol-induced molecular features, attributed to methoxy, found on NiAl(110) surface. These were produced by methanol molecules deposited by a pulse injection method onto the metallic surface. Our study shows adsorbed methoxy are very reactive to the bias voltage, rendering the standard spectroscopy useless. Our new x-ramp scan shows that the decomposition of adsorbates occurs at the sample bias of 3.63 V, and proceeds with the lifetime of a few milliseconds. The details of the method will be provided at the discussion.

• Proceedings of the Korean Vacuum Society Conference
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• 2014.02a
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• pp.198.2-198.2
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• 2014

We investigated change of the electronic structure, chemical states and elements ratio in graphene film by using photoelectron spectroscopy (PES). The graphene electrode has attracted considerable interest due to its possible applications in flexible organic light emitting diodes (F-OLEDs). However, to use the graphene for OLEDs, sufficient increase of work function is required, that is related with hole injection barrier. Plasma treatment is one of the most widely used method in OLEDs to increase the work function of the anode such as indium tin oxide (ITO). In this work, we used the plasma treatment, which is generated by various gas types such as O2, and Ar to increase the work function of the graphene film. From these results, we discuss the relation among the change of work function, plasma power, plasma treatment time and gas types.

• Proceedings of the Korean Vacuum Society Conference
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• 2014.02a
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• pp.176.2-176.2
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• 2014

In this work, we demonstrated that the fabrication of flexible graphene-based chemical sensor with heaters by soft lithographic patterning method [1]. First, monolayer and multilayer graphene were prepared by thermal chemical vapor deposition transferred onto SiO2 / Si substrate in order to fabrication of patterned-sensor and -heater. Second, patterned-monolayer and multilayer graphene were detached through soft lithography process, which was transferred on top and bottom sides of PET film. Third, Au / Ti (Thickness : 100/30 nm) electrodes were deposited end of the patterned-graphene line by sputtering system. Finally, we measured sensor properties through injection of NO2 and CO2 gas on different temperature with voltage change of graphene heater.

• Proceedings of the Korean Vacuum Society Conference
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• 2014.02a
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• pp.395.1-395.1
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• 2014

차세대 디스플레이 소자 기술로 많은 주목을 받고 있는 유기발광소자는 현재 전류효율 향상과 낮은 구동전압과 관련하여 연구가 활발하게 진행되고 있다. 음극과 양극 전극에서 유기물 층으로 전자와 정공의 주입이 많아져도 유기발광 층에서 재결합하는 전자와 정공의 균형이 맞지 않으면 전류 효율과 휘도가 낮아지는 문제점이 있다. 유기발광소자에서 홀 주입 층으로 사용하는 자기조립박막층은 일반적인 유기발광소자에서 정공의 이동도가 낮은 단점을 보완하여 발광층에서 전자와 정공의 균형을 향상하여 전류효율을 향상과 낮은 구동전압 특성을 나타낸다. 본 연구에서는 홀 주입 층으로 사용되는 각각의 자가조립박막을 형성할 물질이 용해되어 있는 에탄올 용액에 ITO를 담가 자가조립박막을 ITO 위에 형성 시킨다. 각각의 홀 주입 층으로 사용된 자가조립박막층의 chain group의 길이와 ITO와 결합하는 head group에 따라 달라지는 쌍극자 모멘트에 의한 홀 주입의 변화를 통해 각 소자의 전류효율과 구동전압 관찰할 수 있었다. 자가조립박막층의 chain group의 길이가 길어질수록 전극으로부터 유기물 층으로의 홀 주입을 방해하여 발광 층에서의 전자와 정공의 재결합 균형이 무너짐으로써 전류효율과 휘도가 낮아지는 경향을 볼 수 있었다. 이 연구 결과는 자가조립박막층을 홀 주입 층으로 대체하는 구조로 유기발광소자의 효율 향상에 대한 기초자료로 활용할 수 있다.

• Proceedings of the Korean Vacuum Society Conference
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• 2014.02a
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• pp.169-169
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• 2014

Interfacial electronic structure of bathocuproine and Al was investigated using in-situ photoemission spectroscopy and density functional theory (DFT) calculations. Bathocuproine is used for exciton blocking and electron transport material in organic photovoltaics and Al is typical cathode material. When thin thickness of Al was thermally evaporated on BCP, gap states were observed by ultraviolet photoemission spectroscopy. The closest gap state yielded below 0.3 eV from Fermi level. By x-ray photoemission spectroscopy, interaction of Al with nitrogen of BCP was observed. To understand the origin of gap states, DFT calculation was carried out and gap states was verified with successive calculation of interaction of Al and nitrogen of BCP. Furthermore, emergency of another state above Fermi level was observed. Remarkable reduction of electron injection barrier between Al and BCP, therefore, is possible.

• Journal of Surface Science and Engineering
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• v.29 no.6
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• pp.735-738
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• 1996

Amorphous nickelphthalocyanine(NiPc) thin films were prepared by vacuum evaporation and their electrochromic behavior and voltammograms were examined in the five kinds of aqueous electrolytes. Amorphous NiPc films were prepared on indium-tin-oxide(ITO) glass substrates cooled to-$120^{\circ}C$ by using liquid nitrogen under a vacuum of $2.4 \times 10^{-4}$. The voltammetric and electrochromic measurements were made using a potential galvanostat. In order to confirm the color change, optical vis-transmission spectra of the NiPc films were measured by a spectrophotometer with various electrode potential applied. The NiPc amorphous thin films exhibited most clearly electrochromism in $KNO_3$ aqueous electrolyte. The specimen films underwent 3 color transitions (from blue to yellow-green, then to red violet, then to dark blue), corresponding to the three peaks on the voltammograms in $KNO_3$ aqueous electrolyte. Blue is color of the as-prepared film. When the potential was swept, charge compensation was attained upon oxidation by injection of anions from the electrolyte and upon reduction by expulsion of anions.

• Proceedings of the Korean Vacuum Society Conference
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• 2010.08a
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• pp.128-128
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• 2010

In this study, we investigated the evolution and reduction of the surface roughness during the high-speed chemical dry thinning process of Si wafers. The direct injection of NO gas into the reactor during the supply of F radicals from NF3 remote plasmas was very effective in increasing the Si thinning rate, due to the NO-induced enhancement of the surface reaction, but resulted in the significant roughening of the thinned Si surface. However, the direct addition of Ar and N2 gas, together with NO gas, decreased the root mean square (RMS) surface roughness of the thinned Si wafer significantly. The process regime for the increasing of the thinning rate and concomitant reduction of the surface roughness was extended at higher Ar gas flow rates. In this way, Si wafer thinning rate as high as $20\;{\mu}m/min$ and very smooth surface roughness was obtained and the mechanical damage of silicon wafer was effectively removed. We also measured die fracture strength of thinned Si wafer in order to understand the effect of chemical dry thinning on removal of mechanical damage generated during mechanical grinding. The die fracture strength of the thinned Si wafers was measured using 3-point bending test and compared. The results indicated that chemical dry thinning with reduced surface roughness and removal of mechanical damage increased the die fracture strength of the thinned Si wafer.

• Proceedings of the Korean Vacuum Society Conference
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• 2012.02a
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• pp.541-541
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• 2012

InP quantum dots capped by myristic acid (InP-MA QDs) were synthesized by a typical hot injection method using MA as stablizing agent. The current density across the InP-MA QDs thin film which was fabricated by spin-coating method is about $10^{-4}A/cm^2$ at the electric field of 0.1 MV/cm from I-V measurement on a metal-insulator-metal (MIM) device. The low conductivity of the InP-MA QDs thin film is interpreted as due to the long interdistances among the dots governed by the MA molecules. Therefore, replacing the MA with thioacetic acid (TAA) by biphasic ligand exchange was conducted in order to obtain TAA capped InP QDs (InP-TAA). InP-TAA QDs were designed due to: 1) the TAA is very short molecule; 2) the thiolate groups on the surface of the InP-TAA QDs are expected to undergo condensation reaction upon thermal annealing which connects the QDs within the QD thin film through a very short linker -S-; and 3) TAA provides better passivation to the QDs both in the solution and thin film states which minimizing the effect of surface trapping states.

• Proceedings of the Korean Vacuum Society Conference
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• 2011.08a
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• pp.381-381
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• 2011

The influence of the water vapor on the growth of single-walled carbon nanotubes (SWCNTs) was investigated. SWCNTs were synthesized by catalytic chemical vapor deposition of acetylene over Fe-Mo/MgO catalyst with injection of water vapor. The morphologies and structures of the water-assisted SWCNTs were investigated according to the growth conditions such as water vapor concentrations, flow rate of the gas, furnace temperature, and growth time. Water-assisted SWCNTs exhibited large bundle morphological features with well-alignment of each CNT, while SWCNTs synthesized in the absence of water vapor showed entangled CNT with the random orientation. We also found that the diameter of the SWCNT bundle could be controlled by the growth condition. In our optimal growth condition, the product yield and the purity were 300 wt. % and 75%, which were 7.5 and 2.5 times higher than those of SWCNTs synthesized without water vapor, respectively. More detail discussion will be offered at the poster presentation.

• Proceedings of the Korean Vacuum Society Conference
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• 2011.08a
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• pp.317-317
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• 2011

Enhanced ICRF (Ion Cyclotron Range of Frequency) ion heating of H-mode D(H) plasma will be tried in 2011 KSTAR experimental campaign. Minority heating is a main ion heating scheme in the ICRF. Its efficiency increases as the hydrogen minority ratio increases in deuterium plasmas. And it should be sustained at a lower level than the critical minority ratio. Consequently, it is important to elevate the critical ratio to maximize ion heating and it is possible by increasing the ion temperature or parallel wave number (k${\parallel}$) of the antenna. Increasing the k${\parallel}$ is not a good approach since the coupling efficiency decreases exponentially with regard to k${\parallel}$ as well. So the remaining method is to increase ion temperature by using NB (Neutral Beam). Ion heating fraction of NB increases as the electron temperature increases. Therefore, we will try to heat electron by using ECH together with NB ion heating before ICRF power injection. The ICRF heating efficiency will be compared with respect to several NB+ECH+ICRF heating combinations through several diagnostics such as XICS (Xray Imaging Crystal Spectroscopy), CES (Charge Exchange Spectroscopy) and neutron measurement. The theoretical background and the experimental results will be presented in more detail in the conference.