Study of Plasma Treatments to Increase Work Function of Multilayer Graphene Film

  • Maeng, Min-Jae (Department of Physics and Research Institute for Basic Science, Kyung Hee University) ;
  • Kim, Ji-Hoon (Department of Physics and Research Institute for Basic Science, Kyung Hee University) ;
  • Kwon, Dae-Gyeon (Department of Physics and Research Institute for Basic Science, Kyung Hee University) ;
  • Hong, Jong-Am (Department of Physics and Research Institute for Basic Science, Kyung Hee University) ;
  • Park, Yongsup (Department of Physics and Research Institute for Basic Science, Kyung Hee University)
  • Published : 2014.02.10

Abstract

We investigated change of the electronic structure, chemical states and elements ratio in graphene film by using photoelectron spectroscopy (PES). The graphene electrode has attracted considerable interest due to its possible applications in flexible organic light emitting diodes (F-OLEDs). However, to use the graphene for OLEDs, sufficient increase of work function is required, that is related with hole injection barrier. Plasma treatment is one of the most widely used method in OLEDs to increase the work function of the anode such as indium tin oxide (ITO). In this work, we used the plasma treatment, which is generated by various gas types such as O2, and Ar to increase the work function of the graphene film. From these results, we discuss the relation among the change of work function, plasma power, plasma treatment time and gas types.

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