• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2008.11a
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• pp.279-280
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• 2008

For the manufacture of the $CuGaS_2$, Cu, Ga and S were vapor-deposited in the named order. Among them, Cu and Ga were vapor-deposited by using the Evaporation method in consideration of their adhesive force to the substrate so that the composition of Cu and Ga might be 1 : 1, while the surface temperature having an effect on the quality of the thin film was changed from R.T.[$^{\circ}C$] to 150$[^{\circ}C]$ at intervals of 50$[^{\circ}C]$. As a result, at 400$[^{\circ}C]$ of the Annealing temperature, their chemical composition was measured in the proportion of 1 : 1 : 2. It could be known from this experimental result that it is the optimum condition to conduct Annealing on the $CuGaS_2$ thin film under a vacuum when the $CuGaS_2$ thin film as an optical absorption layer material for a solar cell is manufactured.

• Journal of Advanced Marine Engineering and Technology
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• v.38 no.9
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• pp.1094-1100
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• 2014

TEvaporator is key component in food, seawater distillation and waste water treatment system, which is basically to concentrate the raw liquid by evaporating the pure water under vacuum condition. The liquid concentration is performed through the membrane, electro-dialysis and evaporation. In this study, only the evaporating type was treated for evaluating the economic analysis with the various operating conditions. The results of this study showed that the performance of the OT-MSF desalination system is increased with decreasing the temperature difference between the neighboring evaporators, which means that the number of evaporators is increased, under the determined design conditions.

• Journal of Institute of Control, Robotics and Systems
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• v.22 no.7
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• pp.557-561
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• 2016

Recently, in the manufacturing process of flat panel displays, mass production methods of inline system has been emerged. In particular the next generation OLED display manufacturing process, horizontal inline evaporation process has been tried. It is important for the success of OLED inline evaporation process to develop a magnetic levitation transport system capable of transferring a carrier equipped with a mother glass with high accuracy without any physical contact along the rail under vacuum condition. In the case of existing wheel-based transfer system, it is not suitable for OLED evaporation process requiring high cleanliness. On the other hand, the magnetic levitation transport system has an advantage that it does not generate any dust and it is possible to achieve high-precision control because there are not non-linear factors such as friction force. In this paper, we introduce the high-precision magnetic levitation transport system, which is currently under development, for OLED evaporation process.

• Korean Journal of Optics and Photonics
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• v.7 no.1
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• pp.37-43
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• 1996

Two type interference air refractometers have been developed by using a frequency stabilized He-Ne laser in a transverse magnetic field. The refractometers were based on symmetric multiple pass interferometer. In this system, One part of the beams passed through air whose refractivity is to be measured and the other part of the beams passed through a vacuum champer to be used as a reference. Several measurements were performed under normal air condition. Maximum difference between two interference refractometers was ${\pm}2{\times}10^{-8}$.

• Journal of the Korean Ceramic Society
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• v.33 no.10
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• pp.1170-1176
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• 1996

Porous silicon was prepared by anodic reaction. The process was controlled by current density and etching time an the thickness change and the room temperature PL was measured. The thickness of porous silicon was increased with etching time and was decreased after critical time. It was the same as increasing current density. It needed only 15 sec to electropolish the surface of porous silicon above current density 70 mA/cm2. We can understand that increasing etching time leads narrow size of Si column by porous silicon formation mechanism. And the sample with narrow Si column revealed PL blue shift. The specimens were heated in the range of 300-1000$^{\circ}C$ in order to see PL changes. The heat treatment was proceeded in H2 atmosphere vacuum system to avoid oxidation. The PL was disappeared above 600$^{\circ}C$. In high temperature some sintered Si columns were observed in SEM photography. There was no difference of -Hx bonds which was suggested as evidence of hydride compounds luminescence between 500$^{\circ}C$ and 600$^{\circ}C$. Thus it is concluded that quantum confinement is major factor of PL of porous silicon.

• Proceedings of the KIEE Conference
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• 1996.07c
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• pp.1421-1423
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• 1996

In this study, the effect of solar cell cover glass on the solar cell performance is evaluated. Silicon solar cell (active area:4*6cm, efficiency:12.6% at AMO condition) is used for this study. ITO(Indium tin Oxide) film thickness of the ITO/AR/substrate glass/solar cell structure samples are $40{\AA}$, $60{\AA}$, $160{\AA}$, $240{\AA}$ respectively. The solar cell maximum output power on the stacking structure variations showed 465mW in the AR/ITO/substrate glass/solar cell, and minimum output power showed 403mW in the AR/substrate glass/solar cell. The maximum output power of the solar cell on the ITO thickness variations of the ITO/AR/substrate glass/solar cell showed 460mW at $40{\AA}$ then decrease output power as ITO thickness increase. For environment tests, all samples are exposed UV light in the vacuum chanber. The output power degradation of AR(UVR)/substrate glass/solar cell stacking structure is small compared with ITO/AR(UVR)/substrate glass/solar cell stacking structure.

• Proceedings of the KIEE Conference
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• 2002.07c
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• pp.1476-1478
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• 2002

In recent years, the tantalum nitride(TaN) thin-film has been developed for the electronic resistor, inductor and capacitor. In this papers, this study presents the surface profile and sheet-resistance property relationship of reactive-sputtered TaN thin film resistor processed by TaN(tantalum nitride) on alumina substrate. The TCR properties of the TaN films were discussed in terms of crystallization and thin films surface morphology due to annealing temperature. It is clear that the TaN thin-films resistor electrical properties are low TCR related with it's annealing temperature and ambient annealing condition. Respectively, at $300{\sim}400^{\circ}C$ on vacuum and nitrogen annealed thin film resistor having a goof thermal stability and lower TCR properties then as deposited thin films expected for the application to the dielectric material of passive component.

• Proceedings of the KIEE Conference
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• 1999.11d
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• pp.950-952
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• 1999

In this paper, we are studied a electrical properties study with P.D.GEORGE/STER LING Co. P.B 302-LV-2 POLYBUTADIENE RESIN which is used for VPI(Vacuum Pressure Impregnation)processing of field magnet and armature of traction motor in Korean national railroad at present was carried out its FT-IR (Fourier Transform Infra-Red) volume resistivity characteristics. The varnishes were experimented with the temperature range form $25[^{\circ}C]$ to $180[^{\circ}C]$ and applied voltage were supplied at 100, 250, 500, 1,000[V]. In this condition, the volume resistivity for specimens were measured. From the above study, the following data obtained for volume resistivity. It can be confirmed that velume resistivity with the increase of temperature is lower rapidly from room temperature to $130[^{\circ}C]$, and it is lower slowly at temperature higher than $130[^{\circ}C]$. Volume resistivity value is higher, according as the specimen is thick gradually. As the applied voltage is higher in the same temperature, volume resistivity value is lower.

• Proceedings of the Korean Institute of Surface Engineering Conference
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• 2017.05a
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• pp.148-148
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• 2017

Surface modification is a type of mechanical manipulation skills to achieve extensive aims including corrosion control, exterior appearance, abrasion resistance, electrical insulation and electrical conductivity of substrate materials by generating a protective surface using electrical, physical and chemical treatment on the surface of parts made from metallic materials. Such surface modification includes plating, anodizing, chemical conversion treatment, painting, lining, coating and surface hardening; this study conducted cavitation experiment to assess improvement of durability using anodizing. In order to observe surface characteristics with applied current density, the electrolyte temperature, concentration was maintained at constant condition. To prevent hindrance of stable growth of oxide layer due to local temperature increase during the experiment, stirring was maintained at constant speed. In addition, using galvanostatic method, it was maintained at processing time of 40minutes for 10 to $30mA/cm^2$. The cavitation experiment was carried out with an ultra sonic vibratory apparatus using piezo-electric effect with modified ASTM-G32. The peak-to-peak amplitude was $30{\mu}m$ and the distance between the horn tip and specimen was 1mm. The specimen after the experiment was cleaned in an ultrasonic bath, dried in a vacuum oven for more than 24 hours, and weighed with an electric balance. The surface damage morphology was observed with 3D analysis microscope. As a result of the study, differences were observed surface hardness and anti-cavitation characteristics depending on the development of oxide film with the anodizing process time.

• Journal of Powder Materials
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• v.21 no.6
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• pp.447-453
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• 2014

Effect of oxygen content in the ultrafine tungsten powder fabricated by electrical explosion of wire method on the behvior of spark plasma sintering was investigated. The initial oxygen content of 6.5 wt% of as-fabricated tungsten powder was reduced to 2.3 and 0.7 wt% for the powders which were reduction-treated at $400^{\circ}C$ for 2 hour and at $500^{\circ}C$ for 1h in hydrogen atmosphere, respectively. The reduction-treated tungsten powders were spark-plasma sintered at $1200-1600^{\circ}C$ for 100-3600 sec. with applied pressure of 50 MPa under vacuum of 0.133 Pa. Maximun sindered density of 97% relative density was obtained under the condition of $1600^{\circ}C$ for 1h from the tungsten powder with 0.7 wt% oxygen. Sintering activation energy of $95.85kJ/mol^{-1}$ was obtained, which is remarkably smaller than the reported ones of $380{\sim}460kJ/mol^{-1}$ for pressureless sintering of micron-scale tungsten powders.