• Journal of the Korean Society for Aeronautical & Space Sciences
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• v.38 no.2
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• pp.200-205
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• 2010

Heat-resistance of W/$Y_2O_3$ as throat insert material was evaluated to develop rocket motor keeping thrust uniformly under condition of high-temperature, high-pressure and long-burn time. Test was conducted with varying burn time, and test results were compared with CIT. Test showed that ablation rate was decreased according as burn time was increased, and that ablation rate of W/$Y_2O_3$ was about 55 % of CIT. Macro/micro structures of throat insert did not show a peculiar phenomenon by increased burn time. In addition, the vacuum heat treatment is effective for the prevention of crack in throat insert.

• Proceedings of the Korean Society of Propulsion Engineers Conference
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• 2011.11a
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• pp.135-138
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• 2011

As a basic research for the development of Korean lunar lander, propulsion system development for ground test is in progress. Thrust for descent is 200 N class. Design target is 220 N in vacuum thrust at 100 g/s flow rate, 200 psi chamber pressure. For ground test, thrust measurement system using LM guide was developed and test was performed. The result shows 160 N thrust in atmosphere condition at 210 psi chamber pressure.

• Korean Journal of Materials Research
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• v.5 no.2
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• pp.197-202
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• 1995

The surface morphology and grain growth of amophous silicon (a-Si) films deposited by low pressure chemical vapor deposition (LPCVD) have been investigated as a function of deposition and in sltu annealing condition. The film deposited at the amorphous to polycrystalline transition temperature has an extra-rough, rugged surface with (311) t.exture. At the same deposition temperature, the grain structure tends to shirr. from the polycrystalline to the amorphous phase with increasing the film thickness. It is found that nucleation of a-Si during in situ annealing at the transition temperature without breaking the vacuum starts to occur from surface Si atom migration in contrast to a heterogeneous nucleation during film deposition.

• Proceedings of the Korean Society of Propulsion Engineers Conference
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• 2006.11a
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• pp.191-195
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• 2006

It is definitely required to control dispersion of the rocket engine performance in order to accomplish the mission of a launch vehicle successfully. A performance dispersion analysis was conducted for a gas generator cycle liquid rocket engine and the required pressure drops were estimated for engine tunning. As a result, the vacuum thrust dispersion of the engine was from +9.1% to -8.7% and the mixture ratio deviated from +9.7% to -9.6% from the nominal value due to the errors of components and the engine inlet condition of propellants. The required pressure drop in the LOx line to the combustor is higher than in the fuel line for same mixture ratio change.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.11 no.3
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• pp.242-247
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• 1998

In this study, we have synthesized $ZnGa_2O_4$:Mn,X powder doped with Mn, MnO, $MnF_2$ and $MnCl_2$, low voltage green emitting phosphor, in vacuum atmosphere. From PL spectra, the intensity of the emission peak, the brightness with coactivator show that $ZnGa_2O_4$:Mn,Cl > $ZnGa_2O_4$:Mn,F > $ZnGa_2O_4$:Mn,O > $ZnGa_2O_4$:Mn. These improvement of the brightness are caused by the increase of the concentration of $Mn^{2+}$ ion. In case of $ZnGa_2O_4$:Mn,Cl and ZnGa$_2$O$_4$:Mn,F, the brightness is enhanced much more, which is owed to the decrease of defect of host material. For $ZnGa_2O_4$:Mn,Cl phosphor fabricated with optimized condition, the decay time becomes short from 30 ms of the $ZnGa_2O_4$:Mn and $ZnGa_2O_4$:Mn,O to 6 ms and the brightness of CL at 1 kV, 1 mA is 60 cd/$m^2$.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.15 no.11
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• pp.958-962
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• 2002

This paper reports on the fabrication of free-standing microstructures by DRIE (deep reactive ion etching). SOI (Si-on-insulator) structures with buried cavities are fabricated by SDB (Si-wafer direct bonding) technology and electrochemical etch-stop. The cavity was formed the upper handling wafer by Si anisotropic etch technique. SDB process was performed to seal the formed cavity under vacuum condition at -760 mmHg. In the SDB process, captured air and moisture inside of the cavities were removed by making channels towards outside. After annealing (100$0^{\circ}C$, 60 min.), the SDB SOI structure with a accurate thickness and a good roughness was thinned by electrochemical etch-stop in TMAH solution. Finally, it was fabricated free-standing microstructures by DRIE. This result indicates that the fabrication technology of free-standing microstructures by combination SDB, electrochemical etch-stop and DRIE provides a powerful and versatile alternative process for high-performance bulk micromachining in MEMS fields.

• Journal of the Korean Ceramic Society
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• v.47 no.6
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• pp.485-490
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• 2010

In our previous studies, continuous SiC fiber-reinforced SiC-matrix composites ($SiC_f$/SiC) had been fabricated by two different slurry infiltration methods: vacuum infiltration and electrophoretic deposition (EPD). 12 wt% of $Al_2O_3-Y_2O_3$-MgO with respect to SiC powder was used as additives for liquid-phase assisted sintering. After hot pressing at $1750^{\circ}C$ under 20 MPa for 2 h in Ar atmosphere, a high composite density could be achieved for both cases, whereas the problems such as large grain size and non-uniform distribution of liquid phase were observed, which was resulted in the relatively poor mechanical properties of composites. Therefore, efforts have been made to reduce the grain growth during the sintering, including the optimization for hot pressing condition and utilization of spark plasma sintering using a SiC monolith. Based on the results, spark plasma sintering was found to be effective method in decreasing the amount of sintering additive, time and grain growth, which will be explained in comparison to the results of hot pressing in this paper.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2004.11a
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• pp.81-84
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• 2004

The NiCr is an important material for present thin-film resistor application owing to its low TCR and thermal stability. In this work, the NiCr thin films were deposited on coming glass substrate by reactive magnetron sputtering and the annealing at temperatures range from 300 to $500^{\circ}C$ for 20 min in vacuum. X-ray, AFM, $R_s$(surface leakage current) have been used to study the structural and electrical properties of the NiCr thin films. The high precision NiCr thin films resistor with TCR(temperature coefficient of resistance) of less then $10\;ppm/^{\circ}C$ was obtained under in in-situ annealing at $300^{\circ}C$ on Cr buffer layer substrate. It is clear that the NiCr thin-films resistor electrical properties are low TCR related with it's annealing and buffer layer condition. NiCr thin film resistor having a good thermal stability and low TCR properties are expected for the application to the dielectric material of passive component.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2010.06a
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• pp.241-241
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• 2010

Recently high and persistent spontaneous buildup of a surface potential (SP) upon vacuum deposition of tris (8-hydroxyquinolinato) aluminum (III) ($Alq_3$), which is widely used for organic light emitting devices. The removal of the giant surface potential by visible light irradiation has also been reported. In this study, we coated $Alq_3$ on the FTO substrate and raise the capacity for absorbing sun light. The $Alq_3$ which is green light emitting diode emits light at wavelengths between 500 and 550nm. If we apply one's FTO/$Alq_3$ substrate in one's DSSC, we could get higher energy conversion efficiency because the N719 dye that we used for fabricating the DSSC emits light just at near 540nm. The energy conversion efficiency of approximately 4.8 % at the condition of irradiation of AM 1.5 (100 mW/$cm^2$) simulated sunlight, and the $J_{sc}$ is 12.0 mA/$cm^2$, $V_{oc}$ is 0.71 V, FF is 0.56, respectively.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.21 no.10
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• pp.923-929
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• 2008

On the piezoelectric polymer, PVDF (poly vinylidene fluoride), the transparent conducting oxide (TCO) electrode material thin film was deposited by roll to roll sputtering process mentioned as a mass product-friendly process for display application. The deposition method for ITO Indium Tin Oxides) as our TCO was DC magnetron sputtering optimized for polymer substrate with the low process temperature. As a result, a high transparent and good conductive ITO/PVDF film was prepared. During the process, especially, the gas mixture ratio of Ar and Oxygen was concluded as an important factor for determining the film's physical properties. There were the optimum ranges for process conditions of mixture gas ratio for ITO/PVDF From these results, the doping mechanism between the oxygen atom and the metal element, Indium or Tin was highly influenced by oxygen partial pressure condition during the deposition process at ambient temperature, which gives the conductivity to oxide electrode, as generally accepted. With our studies, the process windows of TCO for display and other application can be expected.