• Proceedings of the Korean Vacuum Society Conference
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• 2011.02a
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• pp.234-234
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• 2011

Electron-neutral collision frequency is one of the important parameters in the plasma physics and in industrial plasma engineering. We can understand the momentum, energy, and charge transport properties of the plasma using electron-neutral collision frequency.[1] The wave-cutoff method is a diagnostic method for the electron density measurement, but the cutoff peak value depends on gas pressure. The wave-cutoff signal becomes unclear as increasing gas pressure. The reason of pressure dependence is that the electron-neutral collision disturbs electron motion so that microwave can propagate through plasma at plasma frequency.[2] Using the pressure dependence of wave-cutoff method we can find the electron-neutral collision frequency. At first we tried to confirm this method using well known gas such as Ar. The cutoff signal decrease as increasing gas pressure (the simulation result). The wave-cutoff signal is unclear at a gas pressure of 500 mTorr. (electron density $1.0{\times}10^{10}/cm^3$, electron temperature 1.7 eV, electron -neutral collision frequency~1 GHz). In this condition, the electron-neutral collision frequency is closed to the wave-cutoff frequency.

• Proceedings of the Korean Vacuum Society Conference
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• 2012.02a
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• pp.590-590
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• 2012

A transparent conducting oxide (TCO) layer was applied in crystalline Si (c-Si) solar cells without use of the conventional SiNx-coating. A high quality indium-tin-oxide (ITO) layer was directly deposited on an emitter layer of a Si wafer. Three different types of emitters were formed by controlling the phosphorous diffusion condition. A light-doped emitter forming a thinner emitter junction showed an improved photoconversion efficiency of 14.1% comparing to 13.2% of a heavy-doped emitter. This was induced by lower recombination within a narrower depletion region of the light-doped emitter. In the aspect of light management, the intermediate refractive index of ITO is effective to reduce the light reflection leading the enhanced carrier generation in a Si absorber. For the electrical aspect, the ITO layer serves as an efficient electrical conductor and thus relieves the burden of high contact resistance of the light-doped emitter. Additionally, the ITO works as a buffer layer of Ag and Si and certainly prevents the shunting problem of Ag penetration into Si emitter region. It discusses an efficient design scheme of TCO-embedded emitter Si solar cells.

• Proceedings of the Korean Vacuum Society Conference
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• 2011.08a
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• pp.125-125
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• 2011

In this study, we investigated the electrical, optical, structural, and surface properties of indium zinc oxide (IZO)/Ag/IZO multilayer electrode grown by specially designed roll-to-roll sputtering system using the flexible substrate. By the continuous roll-to-roll sputtering of the bottom IZO, Ag, and top IZO layers at room temperature, they were able to fabricate a high quality IZO/Ag/IZO multilayer electrode. At optimized conditions, the bottom IZO layer (40 nm) was deposited on a flexible substrate. After deposition of the Bottom IZO layer, Ag layer was deposited onto the bottom IZO film as a function of DC power (200~500 W). Subsequently, the top IZO layer was deposited onto the Ag layer at identical deposition conditions to the bottom IZO layer (40 nm). We investigated the characteristics of IZO/Ag/IZO multilayer electrode as a function of Ag thickness. It was found that the electrical and optical properties of IZO/Ag/IZO multilayer electrode was mainly affected thickness of the Ag layer at optimized condition. In case of IZO/Ag/IZO multilayer electrode with the Ag power (350W), it exhibited a low sheet resistance of 7.1 ohm/square and a high transparency of 86.4%. Furthermore, we fabricated the touch screen panel using the IZO/Ag/IZO multilayer electrode, which demonstrate the possibility of the IZO/Ag/IZO multilayer electrode grown by roll-to-roll sputtering system as a transparent conducting layer in the touch screen panel.

• Proceedings of the Korean Vacuum Society Conference
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• 2011.02a
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• pp.106-106
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• 2011

Recently, zinc oxide (ZnO) thin films have attracted great attention as a promising candidate for various electronic applications such as transparent electrodes, thin film transistors, and optoelectronic devices. ZnO thin films have a wide band gap energy of 3.37 eV and transparency in visible region. Moreover, ZnO thin films can be deposited in a poly-crystalline form even at room temperature, extending the choice of substrates including even plastics. Therefore, it is possible to realize thin film transistors by using ZnO thin films as the active channel layer. In this work, we investigated influence of oxygen partial pressure on ZnO thin films and fabricated ZnO-based thin film transistors. ZnO thin films were deposited on glass substrates by using a pulsed laser deposition technique in various oxygen partial pressures from 20 to 100 mTorr at room temperature. X-ray diffraction (XRD), transmission line method (TLM), and UV-Vis spectroscopy were employed to study the structural, electrical, and optical properties of the ZnO thin films. As a result, 80 mTorr was optimal condition for active layer of thin film transistors, since the active layer of thin film transistors needs high resistivity to achieve low off-current and high on-off ratio. The fabricated ZnO-based thin film transistors operated in the enhancement mode with high field effect mobility and low threshold voltage.

• Proceedings of the Korean Vacuum Society Conference
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• 2011.08a
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• pp.199-199
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• 2011

The addition of a carbanion to ${\yen}{\acute{a}}{\yen}{\hat{a}}$-unsaturated carbonyl compounds is of importance in the C-C bond formation reactions for modern pharmaceuticals and organic synthesis. Recently, heterogeneous asymmetric catalysis became more attractive area of research because of the easy recovery and separation of the catalyst from the reaction system. Most of synthetic methods for heterogeneous catalysts were grafting or immobilization of homogeneous catalyst onto the solid supports. Trans-1,2-Diaminocyclohexane(DACH) and L-proline ligands have been enormously used as chiral ligands in several catalytic transformation under homogenous conditions. Our group prepared l-proline functionalized mesoporous silica was synthesized under acidic condition using a poly(ethylene oxide)-poly(propylene oxide)-poly(ethylene oxide) triblock copolymer template (EO20PO70EO20, Pluronic P-123, BASF). Furthermore, we successfully directly synthesized trans-1,2 diaminocyclohexane functionalized mesoporous silica by using microwave method. The direct functionalization of chiral ligand into the framework of mesoporous materials is expected to be useful for the heterogeneous asymmetric catalysis. So, we adopt the direct synthesis of chiral ligand functionalized mesoporous silica by using thermal and microwave irradiation. Then, chiral ligand functionalized mesoporous silicas were applied to enantioselective asymmetric catalytic reactions.

• Proceedings of the Korean Vacuum Society Conference
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• 2011.02a
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• pp.320-320
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• 2011

We describe fabrication of superhydrophobic surface on non-woven fabric (NWF) having nano-hairy structures and a hydrophobic surface coating. Oxygen plasma was irradiated on NWF for nano-texuring and a precursor of HMDSO (Hexamethydisiloxane) was introduced as a surface chemical modification for obtaining superhydrophobicity using 13.56 MHz radio frequency-Plasma Enhanced Chemical Vapor Deposition (rf-PECVD). O2 plasma treatment time was varied from 1 min to 60 min at a bias voltage of 400V, which fabricated pillar-like structures with diameter of 30 nm and height of 150 nm on NWF. Subsequently, hydrophobic coating using hexamethyldisiloxane vapor was deposited with 10 nm thickness on NWF substrate at a bias voltage of 400 V. We evaluate superhydrophobicity of the modified NWF with sessile drop using goniometer and high speed camera, in which aspect ratio of nanohairy structures, contact angle and contact angle hysteresis of the surfaces were measured. With the increase of aspect ratio, the wetting angle increased from $103^{\circ}$ to $163^{\circ}$, and the contact angle hysteresis decreased dramatically below $5^{\circ}$. In addition, we had conducted experiment for nucleation and condensation of water via E-SEM. During increasing vapor pressure inside E-SEM from 3.7 Torr to over 6 Torr which is beyond saturation point at $2^{\circ}C$, we observed condensation of water droplet on the superhydropobic NWF. While the condensation of water on oxygen plasma treated NWF (superhydrophilic) occurred easily and rapidly, superhydrophobic NWF which was fabricated by oxygen and HMDSO was hardly wet even under supersaturation condition. From the result of wetting experiment and water condensation via E-SEM, it is confirmed that superhydrophobic NWF shows the grate water repellent abilities.

• Proceedings of the Korean Vacuum Society Conference
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• 2011.08a
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• pp.196-196
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• 2011

Molecular $N_2O$ has bee known to react over oxygen vacancy on a reduced rutile $TiO_2$(110)-1${\times}$1 surface to desorb as molecular $N_2$ leaving oxygen atom behind. In the present study, we investigated the reaction of $N_2O$ on rutile $TiO_2$(110) using temperature-programmed desorption (TPD). Our results indicate that $N_2O$ does not react over the oxygen vacancy under a typical UHV experimental condition. On a rutile $TiO_2$(110)-1${\times}$1 with a well-defined oxygen vacancy concentration of 5% ($2.6{\times}10^{13}/cm^2$), $N_2O$ desorption features show a monolayer peak maximum at 135 K followed by a small peak maximum at 170 K. When the oxygen vacancy is blocked with $H_2O$, the $N_2O$ peak at 170 K disappears completely, indicating that the peak is due to molecular $N_2O$ interacting with oxygen vacancy. The integrated amount of desorbed $N_2O$ plotted against the amount of adsorbed $N_2O$ however shows a straight line with no offset indicating no loss of $N_2O$ during our cycles of TPD measurements. In addition, our $N_2O$ uptake measurements at 70~100 K showed no $N_2$ (as a reaction product) desorption except contaminant $N_2$. Also, $H_2O$ TPD taken after $N_2O$ scattering up to 350 K indicates no change in the vacancy-related $H_2O$ desorption peak at 500 K showing no change in the oxygen vacancy concentration after the interaction with $N_2O$.

• Proceedings of the Korean Vacuum Society Conference
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• 2012.02a
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• pp.371-372
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• 2012

We have studied lead-based gapless semiconductors, $PbPdO_2$, which is very sensitive to external parameters such as temperature, pressure, electric field, etc[1]. We have fabricated pure $PbPdO_2$, Co- and Mn-doped $PbPdO_2$ thin films using the pulsed laser deposition. Because of the volatile element of Pb, it is very difficult to grow the films. Note that in case of $MgB_2$, Mg is also volatile element. So in order to enhance the quality of $MgB_2$, some experiments are carried out in annealing with Mg-rich atmosphere [2]. This annealing process with volatile element plays an important role in making smooth surface. Thus, we applied such process to our studies of $PbPdO_2$ thin films. As a result, we found the optimal condition of ex-situ annealing temperature ${\sim}650^{\circ}C$ and time ~12 hrs. The ex-situ annealing brought the extreme change of surface morphology of thin films. After ex-situ annealing with PbO-rich atmosphere, the grain size of thin film was almost 100 times enlarged for all the thin films and also the PbO impurity phase was smeared out. And from X-ray diffraction measurements, we determined highly crystallized phases after annealing. So, we measured electrical and magnetic properties. Because of reduced grain boundary, the resistivity of ex-situ annealed samples changed smaller than no ex-situ sample. And the carrier densities of thin films were decreased with ex-situ annealing time. In this case, oxygen vacancies were removed by ex-situ annealing. Furthermore, we will discuss the transport and magnetic properties in pure $PbPdO_2$, Co- and Mn-doped $PbPdO_2$ thin films in detail.

• Journal of the Korean Society for Aeronautical & Space Sciences
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• v.42 no.9
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• pp.789-794
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• 2014

The FPGA is used to the high speed digital satellite communication on the Digital Signal Process Unit of the next generation GEO communication satellite. The high capacity FPGA has the high power dissipation and it is difficult to satisfy the derating requirement of temperature. This matter is the major factor to degrade the equipment life and reliability. The thermal control at the equipment level has been worked through thermal conduction in the space environment. The FPGA of CCGA or BGA package type was mounted on printed circuit board, but the PCB has low efficient to the thermal control. For the FPGA heat dissipation, the heat sink was applied between part lid and housing of equipment and the performance of heat sink was confirmed via thermal vacuum test under the condition of space qualification level. The FPGA of high power dissipation has been difficult to apply for space application, but FPGA with heat sink could be used to space application with the derating temperature margin.

• Journal of the Korean Society for Aeronautical & Space Sciences
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• v.43 no.1
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• pp.72-78
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• 2015

Recently, the usage of the satellite is increased more and more in the areas that are communication, weather, marine, optical, radar etc. The functions of the Satellite are evolving from passive transponder to active transponder by the developing of a technology. Advanced countries in satellites install the DCAMP for increase of bandwidth efficiency, improvement of QoS by interference rejection. DCAMP includes many digital components in order to implement functions. Thus, these kinds of active transponders consume much more power compared to passive transponder and then increase the heat. In this paper, we discuss the TVAC test result of DCAMP in EQM(Engineering Qualification Model) level. The paper shows the test results of digital gain control in order to verify DCAMP status under the TVAC test. In addition, the temperature and heat condition of main components from viewpoint of derating will be treated through the official environment test for qualification.