• Journal of the Korea Academia-Industrial cooperation Society
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• v.19 no.11
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• pp.1-7
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• 2018

In a microcolumn, a miniaturized electrostatic deflector is often adopted to scan an electron beam. Usually, a double octupole deflector is used because it can avoid excessive spherical aberrations by controlling the electron beam path close to the optical axis of the objective lens and has a wide scan field. Studies on microcolumns have been performed to improve the low throughput of an electron column through multiple column applications. On the other hand, as the number of microcolumns increases, the number of wires connected to the components of the microcolumn increases. This will result in practical problems during the process of connecting the wires to electronic controllers outside of the vacuum chamber. To reduce this problem, modified quadrupole and octupole deflectors were examined through simulation analysis by selecting an ultraminiaturized microcolumn with the Einzel lens eliminated. The modified deflectors were designed changing the size of each electrode of the conventional Si octupole deflector. The variations of the scan field and electric field strength were studied by changing the size of active electrodes to which the deflection voltage was to be applied. The scan field increased linearly with increasing deflection voltage. The scan field of the quadrupole deflector and the electric field strength at the center were calculated to be approximately 1.3 ~ 2.0 times larger than those of the octupole deflector depending on the electrode size.

• Journal of the Korean Vacuum Society
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• v.18 no.1
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• pp.66-72
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• 2009

The detection methods are required to monitor and diagnose the abnormality on the insulation condition inside a gas-insulated switchgear (GIS). Due to a good sensitivity to the products decomposed by partial discharges (PDs) in $SF_6$ gas, the development of a SWNT gas sensor is actively in progress. However, a few numerical studies on the diffusion mechanism of the $SF_6$ decomposition products by PD have been reported. In this study, we modeled $SF_6$ decomposition process in a chamber by calculating temperature, pressure and concentration of the decomposition products by using a commercial CFD program in conjunction with experimental data. It was assumed that the mass production rate and the generation temperature of the decomposition products were $5.04{\times}10^{-10}$ [g/s] and over 773 K respectively. To calculate the concentration equation, the Schmidt number was specified to get the diffusion coefficient functioned by viscosity and density of $SF_6$ gas instead rather than setting it directly. The results showed that the drive potential is governed mainly by the gradient of the decomposition concentration. A lower concentration of the decomposition products was observed as the sensors were placed more away from the discharge region. Also, the concentration increased by increasing the discharge time. By installing multiple sensors the location of PD is expected to be identified by monitoring the response time of the sensors, and the information should be very useful for the diagnosis and maintenance of GIS.

• Journal of the Korean Vacuum Society
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• v.18 no.4
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• pp.318-330
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• 2009

A high heat flux test facility using a graphite heating panel was constructed and is presently in operation at Korea Atomic Energy Research Institute, which is called KoHLT-1. Its major purpose is to carry out a thermal cycle test to verify the integrity of a HIP (hot isostatic pressing) bonded Be mockups which were fabricated for developing HIP joining technology to bond different metals, i.e., Be-to-CuCrZr and CuCrZr-to-SS316L, for the ITER (International Thermonuclear Experimental Reactor) first wall. The KoHLT-1 consists of a graphite heating panel, a box-type test chamber with water-cooling jackets, an electrical DC power supply, a water-cooling system, an evacuation system, an He gas system, and some diagnostics, which are equipped in an authorized laboratory with a special ventilation system for the Be treatment. The graphite heater is placed between two mockups, and the gap distance between the heater and the mockup is adjusted to $2{\sim}3\;mm$. We designed and fabricated several graphite heating panels to have various heating areas depending on the tested mockups, and to have the electrical resistances of $0.2{\sim}0.5$ ohms during high temperature operation. The heater is connected to an electrical DC power supply of 100 V/400 A. The heat flux is easily controlled by the pre-programmed control system which consists of a personal computer and a multi function module. The heat fluxes on the two mockups are deduced from the flow rate and the coolant inlet/out temperatures by a calorimetric method. We have carried out the thermal cycle tests of various Be mockups, and the reliability of the KoHLT-1 for long time operation at a high heat flux was verified, and its broad applicability is promising.

• Journal of the Korean Vacuum Society
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• v.15 no.6
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• pp.563-575
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• 2006

Ti(C,N) films are synthesized by pulsed DC plasma enhanced chemical vapor deposition (PEMOCVD) using metal-organic compounds of tetrakis diethylamide titanium at $200-300^{\circ}C$. To compare plasma parameter, in this study, $H_2$ and $He/H_2$ gases are used as carrier gas. The effect of $N_2\;and\;NH_3$ gases as reactive gas is also evaluated in reduction of C content of the films. Radical formation and ionization behaviors in plasma are analyzed in-situ by optical emission spectroscopy (OES) at various pulsed bias voltages and gas species. He and $H_2$ mixture is very effective in enhancing ionization of radicals, especially for the $N_2$. Ammonia $(NH_3)$ gas also highly reduces the formation of CN radical, thereby decreasing C content of Ti(C, N) films in a great deal. The microhardness of film is obtained to be $1,250\;Hk_{0.01}\;to\;1,760\;Hk_{0.01}$ depending on gas species and bias voltage. Higher hardness can be obtained under the conditions of $H_2\;and\;N_2$ gases as well as bias voltage of 600 V. Hf(C, N) films were also obtained by pulsed DC PEMOCYB from tetrakis diethyl-amide hafnium and $N_2/He-H_2$ mixture. The depositions were carried out at temperature of below $300^{\circ}C$, total chamber pressure of 1 Torr and varying the deposition parameters. Influences of the nitrogen contents in the plasma decreased the growth rate and attributed to amorphous components, to the high carbon content of the film. In XRD analysis the domain lattice plain was (111) direction and the maximum microhardness was observed to be $2,460\;Hk_{0.025}$ for a Hf(C,N) film grown under -600 V and 0.1 flow rate of nitrogen. The optical emission spectra measured during PEMOCVD processes of Hf(C, N) film growth were also discussed. $N_2,\;N_2^+$, H, He, CH, CN radicals and metal species(Hf) were detected and CH, CN radicals that make an important role of total PEMOCVD process increased carbon content.

• Korean Journal of Optics and Photonics
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• v.18 no.5
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• pp.351-361
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• 2007

The samples composed of a GST thin film and the protective layers of $ZnS-SiO_2$ or $Al_2O_3$ coated on c-Si substrate were prepared by using the magnetron sputtering method. Samples of three different structures were prepared, that is, i) the GST single film on c-Si substrate, ii) the GST film sandwiched by the protective $ZnS-SiO_2$ layers on c-Si substrate, and iii) the GST film sandwiched by $Al_2O_3$ protective layers on c-Si substrate. The ellipsometric constants in the temperature range from room temperature to $700^{\circ}C$ were obtained by using the in-situ ellipsometer equipped with a conventional heating chamber. The measured ellipsometric constants show strong variations versus temperature. The variation of ellipsometric constants at the temperature region higher than $300^{\circ}C$ shows different behaviors as the ambient medium is changed from in air to in vacuum or the protective layers are changed from $ZnS-SiO_2$ to $Al_2O_3$. Since the long heating time of 1-2 hours is believed to be the origin of the high temperature variation of ellipsometric constants upon the heating environment and the protective layers, a PRAM (Phase-Change Random Access Memory) recorder is introduced to reduce the heating time drastically. By using the PRAM recorder, the GST samples are heated up to $700^{\circ}C$ decomposed preventing its partial evaporation or chemical reactions with adjacent protective layers. The surface image obtained by SEM and the surface micro-roughness verified by AFM also confirmed that samples prepared by the PRAM recorder have smoother surface than the samples prepared by using the conventional heater.

• Electrical & Electronic Materials
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• v.12 no.7
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• pp.7-11
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• 1999

Fully sealed field emission display in size of 4.5 inch has been fabricated using single-wall carbon nanotubes-organic vehicle com-posite. The fabricated display were fully scalable at low temperature below 415$^{\circ}C$ and CNTs were vertically aligned using paste squeeze and surface rubbing techniques. The turn-on fields of 1V/${\mu}{\textrm}{m}$ and field emis-sion current of 1.5mA at 3V/${\mu}{\textrm}{m}$ (J=90${\mu}{\textrm}{m}$/$\textrm{cm}^2$)were observed. Brightness of 1800cd/$m^2$ at 3.7V/${\mu}{\textrm}{m}$ was observed on the entire area of 4.5-inch panel from the green phosphor-ITO glass. The fluctuation of the current was found to be about 7% over a 4.5-inch cath-ode area. This reliable result enables us to produce large area full-color flat panel dis-play in the near future. Carbon nanotubes (CNTs) have attracted much attention because of their unique elec-trical properties and their potential applica-tions [1, 2]. Large aspect ratio of CNTs together with high chemical stability. ther-mal conductivity, and high mechanical strength are advantageous for applications to the field emitter [3]. Several results have been reported on the field emissions from multi-walled nanotubes (MWNTs) and single-walled nanotubes (SWNTs) grown from arc discharge [4, 5]. De Heer et al. have reported the field emission from nan-otubes aligned by the suspension-filtering method. This approach is too difficult to be fully adopted in integration process. Recently, there have been efforts to make applications to field emission devices using nanotubes. Saito et al. demonstrated a car-bon nanotube-based lamp, which was oper-ated at high voltage (10KV) [8]. Aproto-type diode structure was tested by the size of 100mm $\times$ 10mm in vacuum chamber [9]. the difficulties arise from the arrangement of vertically aligned nanotubes after the growth. Recently vertically aligned carbon nanotubes have been synthesized using plasma-enhanced chemical vapor deposition(CVD) [6, 7]. Yet, control of a large area synthesis is still not easily accessible with such approaches. Here we report integra-tion processes of fully sealed 4.5-inch CNT-field emission displays (FEDs). Low turn-on voltage with high brightness, and stabili-ty clearly demonstrate the potential applica-bility of carbon nanotubes to full color dis-plays in near future. For flat panel display in a large area, car-bon nanotubes-based field emitters were fabricated by using nanotubes-organic vehi-cles. The purified SWNTs, which were syn-thesized by dc arc discharge, were dispersed in iso propyl alcohol, and then mixed with on organic binder. The paste of well-dis-persed carbon nanotubes was squeezed onto the metal-patterned sodalime glass throuhg the metal mesh of 20${\mu}{\textrm}{m}$ in size and subse-quently heat-treated in order to remove the organic binder. The insulating spacers in thickness of 200${\mu}{\textrm}{m}$ are inserted between the lower and upper glasses. The Y\ulcornerO\ulcornerS:Eu, ZnS:Cu, Al, and ZnS:Ag, Cl, phosphors are electrically deposited on the upper glass for red, green, and blue colors, respectively. The typical sizes of each phosphor are 2~3 micron. The assembled structure was sealed in an atmosphere of highly purified Ar gas by means of a glass frit. The display plate was evacuated down to the pressure level of 1$\times$10\ulcorner Torr. Three non-evaporable getters of Ti-Zr-V-Fe were activated during the final heat-exhausting procedure. Finally, the active area of 4.5-inch panel with fully sealed carbon nanotubes was pro-duced. Emission currents were character-ized by the DC-mode and pulse-modulating mode at the voltage up to 800 volts. The brightness of field emission was measured by the Luminance calorimeter (BM-7, Topcon).

• Journal of the Korean Magnetics Society
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• v.19 no.3
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• pp.89-93
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• 2009

Amorphous $Ge_{1-x}Mn_x$ semiconductor thin films grown by low temperature vapor deposition were annealed, and their electrical and magnetic properties have been studied. The amorphous thin films were $1,000{\sim}5,000\;{\AA}$ thick. Amorphous $Ge_{1-x}Mn_x$ thin films were annealed at $300^{\circ}C$, $400^{\circ}C$, $500^{\circ}C$, $600^{\circ}C$ and $700^{\circ}C$ for 3 minutes in high vacuum chamber. X-ray diffraction analysis reveals that as-grown $Ge_{1-x}Mn_x$ semiconductor thin films are amorphous and are crystallized by annealing. Crystallization temperature of amorphous $Ge_{1-x}Mn_x$ semiconductor thin films varies with Mn concentration. Amorphous $Ge_{1-x}Mn_x$ thin films have p-type carriers and the carrier type is not changed during annealing, but the electrical resistivity increases with annealing temperature. Magnetization characteristics show that the as-grown amorphous $Ge_{1-x}Mn_x$ thin films are ferromagnetic and the Curie temperatures are around 130 K. Curie temperature and saturation magnetization of annealed $Ge_{1-x}Mn_x$ thin films increase with annealing temperature. Magnetization behavior and X-ray analysis implies that formation of ferromagnetic $Ge_3Mn_5$ phase causes the change of magnetic and electrical properties of annealed $Ge_{1-x}Mn_x$ thin films.