• Proceedings of the Korean Vacuum Society Conference
• /
• 2016.02a
• /
• pp.128.1-128.1
• /
• 2016

Nitrided-metal gates on the high-${\kappa}$ dielectric material are widely studied because of their use for sub-20nm semiconductor devices and the academic interest for the evanescent states at the Si/insulator interface. Issues in these systems with the Si substrate are the electron mobility degradation and the reliability problems caused from N defects that permeates between the Si and the $SiO_2$ buffer layer interface from the nitrided-gate during the gate deposition process. Previous studies proposed the N defect structures with the gap states at the Si band gap region. However, recent experimental data shows the possibility of the most stable structure without any N defect state between the bulk Si valence band maximum (VBM) and conduction band minimum (CBM). In this talk, we present a new type of the N defect structure and the electronic structure of the proposed structure by using the first-principles calculation. We find that the pair structure of N atoms at the $Si/SiO_2$ interface has the lowest energy among the structures considered. In the electronic structure, the N pair changes the eigenvalue of the silicon-induced gap state (SIGS) that is spatially localized at the interface and energetically located just above the bulk VBM. With increase of the number of N defects, the SIGS gradually disappears in the bulk Si gap region, as a result, the system gap is increased by the N defect. We find that the SIGS shift with the N defect mainly originates from the change of the kinetic energy part of the eigenstate by the reduction of the SIGS modulation for the incorporated N defect.

• Journal of the Korean Vacuum Society
• /
• v.16 no.1
• /
• pp.1-6
• /
• 2007

We have analyzed the atomic structure of O/Fe(100) and interface atomic structure of MgO deposited on Fe(100) surface using LEED I/V curve analysis. As the O adsorption on the Fe(100) surface, the first substrate interlayer distance is expanded by up to 16%. For 1ML MgO deposited on Fe(100) surface, the oxygen ions of MgO are located on-top of the Fe atoms, the interlayer distance at the MgO/Fe interface are expanded. From the AIA(average intensity mixing approximation) calculation, we find the interface structure of monolayer MgO on Fe(100) system has the two interface structure with MgO/FeO/Fe(100) and MgO/Fe(100). This supports the results of EELS experiment that shown existence of stretched FeO layer and coexistance of MgO/FeO/Fe(100) and MgO/Fe(100) structure.

• Journal of the Korean Vacuum Society
• /
• v.21 no.3
• /
• pp.171-177
• /
• 2012

The computer program (EPR-NMR program version 6.2) employed here sets up the spin Hamiltonian matrices and determines their eigenvalues using exact diagonalization. We study the electron spin resonance for $Mn^{2+}$ in ferroelectric $LiNbO_3$ single crystals. The self-energy is obtained using the projection operator method developed by Argyres and Sigel. The self-energy is calculated to be axially symmetric about the by the spin Hamiltonian. The line-widths decreased as the temperature increased; we assume that the hyperfine structure transition is a more dominant scattering than the other transitions. We conclude that the calculation process presented in this study is useful for quantum optical transitions.

• Proceedings of the Korean Vacuum Society Conference
• /
• 1994.02a
• /
• pp.50-50
• /
• 1994

Half-metallic Heusler alloys (NiMnSb, ppdMnSb, pptMnSb) have attracted much attention due to their unique electronic and magnetic structures. Sppin-ppolarized band structure calculation ppredicts metallic behavior for the majority sppin states and semiconductor behavior for the minority sppin states. We have studied the electronic structures of these half-metallic Heusler alloys by core-level pphotoemission sppectroscoppy of Mn 2pp and 3s XppS sppectra. We found large intensities of Mn 2pp satellites and 3s exchange spplitting comppared with other metal Mn-alloys. These satellite structure can be understood by applying Anderson imppurity model. This fact supports the calculated sppin pprojected ppartial density of states which suggests that the valence electrons be highly sppin ppolarized near Fermi level and that the electrons involved with charge-transfer be mainly minority sppin ones which have semiconducting band structure. The trend of charge transfer energies Δ from ligands (Sb 5pp) to Mn 3d, obtained from our model fitting, is consistent with that calculated from sppin pprojected ppartial density of state. Also the trend of d-d electron correlation energies U calculated from Mn Auger line L3 VV by Mg $K\alpha$ source is comppatible with that resulted from our model fitting. We fitted the Mn 3s curve in the same way as for insulating Mn comppounds by using the same pparameters calculated from Mn 2pp curve fitting exceppt for the Coulomb interaction energy Q between core hole and d-electrons. The 3s sppectra were analyzed by combing the charge transfer model and a simpple model taking into account the configuration mixing effect due to the intra-shell correlation. We found that the exchange interaction between 3s hole and 3d electrons is mainly respponsible for the satellite of Mn 3s sppectra. This is consistent with the neutron scattering data, which suggests local 3d magnetic moment. We find that the XppS analysis results of Mn 2pp and 3s satellite structures of half-metallic Heusler alloys are very similar to those of insulating transition metal comppounds.

• Journal of the Korean Vacuum Society
• /
• v.9 no.2
• /
• pp.162-166
• /
• 2000

High quality $Si_3N_4$ metal-insulator-metal (MIM) capacitors were realized by plasma enhanced chemical vapor deposition (PECVD). Titanium nitride (TiN) adapted as a diffusion barrier reduced the interfacial reaction between $Si_3N_4$ dielectric layer and aluminum metal electrode showing neither hillock nor observable precipitate along the interface. The capacitance and the current-voltage characteristics of the MIM capacitors showed that the minimum thickness of $Si_3N_4$ layer should be limited to 500 $\AA$ under the present process, below which most of the capacitors were electrically shorted resulting in the devastation of on-wafer yield. According to the transmission electron microscopy (TEM) on the cross-sectional microstructure of the capacitors, the dielectric breakdown was caused by slit-like voids formed at the interface between TiN and $Si_3N_4$ layers when the thickness of $Si_3N_4$ layer was less than 500 $\AA$. Based on the calculation of thermally-induced residual stress, the formation of voids was understood from the mechanistic point of view.

• Journal of computational fluids engineering
• /
• v.20 no.4
• /
• pp.63-69
• /
• 2015

The thermal balance test in vacuum chamber for satellite structures is an essential step in the process of satellite development. However, it is technically and economically difficult to fully replicate the space environment by using the vacuum chamber. To overcome these limitations, the thermal analysis through a computer simulation technique has been conducted. The CFRP composite material has attracted attention as satellite structures since it has advantages of excellent mechanical properties and light weight. However, the nonuniform nature of the thermal conductivity of the CFRP structure should be noted at the step of thermal analysis of the satellite. Two different approaches are studied for the thermal analyses; a detailed numerical modeling and a simplified model expressed by an effective thermal conductivity. In this paper, the effective thermal conductivities of the CFRP composite structures are extracted from the detailed numerical results to provide a practical thermal design data for the satellite fabricated with the CFRP composite structure. Calculation results of the surface temperature and the thermal conductivities along x, y, z directions show fairly good agreements between the detailed modeling and the simplified model for all the cases studied here.

• Proceedings of the Korean Vacuum Society Conference
• /
• 2011.08a
• /
• pp.225-225
• /
• 2011

The dielectric and optical properties of GaInZnO (GIZO), HfInZnO (HIZO) and InZnO (IZO) thin films on glass by RF magnetron sputtering method were investiged using reflection electron energy loss spectroscopy (REELS). The band gap was estimated from the onset values of REELS spectra. The band gaps of GIZO, HIZO and IZO thin films are 3.1 eV, 3.5 eV and 3.0 eV, respectively, Hf and Ga incorporated into IZO results in an increase in the energy band gap of IZO by 0.5 eV and 0.1 eV. The dielectric functions were determined by comparing the effective cross section determined from experimental REELS with a rigorous model calculation based on the dielectric response theory, using available software package, good agreement between the experimental and fitting results gives confidence in the accuracy of the determined dielectric function. The main peak of Energy Loss Function (ELF) obtained from IZO shows at 18.42 eV, which shifted to 19.43 eV and 18.15 eV for GIZO and HIZO respectively, because indicates the corporation of cation Ga and Hf in the composition. The optical properties represented by the dielectric function e, the refractive index n, the extinction coefficient k, and the transmission coefficient, T of HIZO and IZO thin films were determined from a quantitative analysis of REELS. The transmission coefficient was increased to 93% and decreased to 87% in the visible region with the incorporation of Hf and Ga in the IZO compound.

• Proceedings of the Korean Vacuum Society Conference
• /
• 2012.02a
• /
• pp.459-459
• /
• 2012

Recently, the discharge of global warming gases in dry etching process of TFT-LCD display industry is a serious issue because perfluorocarbon compound (PFC) gas causes global warming effects. PFCs including CF4, C2F6, C3F8, CHF3, NF3 and SF6 are widely used as etching and cleaning gases. In particular, the SF6 gas is chemically stable compounds. However, these gases have large global warming potential (GWP100 = 24,900) and lifetime (3,200). In this work, we chose C3F6O gas which has a very low GWP (GWP100 = <100) and lifetime (< 1) as a replacement gas. This study investigated the effects of the gas flow ratio of C3F6O/O2 and process pressure in dual-frequency capacitively coupled plasma (CCP) etcher on global warming effects. Also, we compared global warming effects of C3F6O gas with those of SF6 gas during dry etching of a patterned positive type photo-resist/silicon nitride/glass substrate. The etch rate measurements and emission of by-products were analyzed by scanning electron Microscopy (SEM; HITACI, S-3500H) and Fourier transform infrared spectroscopy (FT-IR; MIDAC, I2000), respectively. Calculation of MMTCE (million metric ton carbon equivalents) based on the emitted by-products were performed during etching by controlling various process parameters. The evaluation procedure and results will be discussed in detail.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
• /
• v.23 no.2
• /
• pp.169-173
• /
• 2010

Because of power consumption increase, global warming, and limitation of installation, not only high reliability and interruption capability but also compact and light power apparatuses are needed. In this paper, E field calculation and experiment were processed to identify the influence of the shape of end shield and gap distance. It is expected that the results of FEM simulation and experiments could be the basic data to develop VI. the results of FEM simulation and experiments are as following. Firstly, maximum E fields were compared by means of finite element method as a function of the shape of end shield. 3 types of models were used to analyze maximum E field of each model and the influence of shape of shield could be identified. As a result, proposed L type shield could reduce the maximum E field by 20%. Secondly, the influence of the gap distance between end shields on E field was analyzed. As the gap distance become short the gap distance between inner walls of ceramic also become short. And the maximum E field concentrated on inner wall of ceramic finally increased. Thirdly, the experiment was conducted by fabricating each prototype. As a result, no creepage occurred in shieldless model. In other words, creepage occurred in the shield-installed models. And creepage inception voltages were different from each other because of the difference of maximum E field. Fourthly, The equation that shows relation between calculated E field and measured creepage inception voltage was proposed as a result of FEM analysis and experiment. It is concluded that when designing VI this equation could be important data to reduce time and cost by identifying indirectly the optimal gap distance and the shape of shield required to prevent creepage.

• Journal of the Korean Vacuum Society
• /
• v.9 no.3
• /
• pp.237-241
• /
• 2000

The structural, electrical and etching characteristics of Al alloy thin film with low impurity concentrations AlNd deposited by using do magnetron sputtering deposition are investigated for the applications as gate bus line in the TFt-LCD panel. And ITO thin film was deposited on AlNd, then the contact resistance was measured by Kelvin resistor. The deposited thin films show the decrease of resistivity and the increase of grain size after the RTA at $300^{\circ}C$ for 20 min. Moreover, the resistivity of AlNd does not show appreciable grain size dependence after RTA. It is concluded that the decrease of resistivity after RTA is due to the increase of grain size. The annealed AlNd is found to be hillock free. The etching profiles of AlNd was good and the minimun contact resistance was about $110\;{\mu\Omega}cm$. Calculation results reveal that the AlNd (2wt.%) thin film can be applicable to 25" SXGA class TFT-LCD panels.