• Proceedings of the Korean Vacuum Society Conference
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• 2011.08a
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• pp.403-403
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• 2011

결정질 태양전지는 태양전지 시장에 큰 서막을 장식하였다. 현재 여러 종류의 태양전지 기술들이 많이 나오고 있지만 결정질 태양전지는 변환 효율이 좋고 신뢰성이 높아서 높은 시장 점유율을 차지하고 있다. 하지만 응용 분야가 적고 기판 가격이 비싸다는 단점이 있다. 현재에는 응용분야 개선을 위하여 Flexible solar cell에 대한 연구가 활발하다. Flexible solar cell에 상부전극은 결정질 태양전지에서 사용되는 Ag나 Al 전극 대신 TCO 종류의 일종인 ITO를 많이 사용한다. Flexible Solar cell은 Organic Solar cell과 Amorphous Solar Cell 두 가지 범주를 가지고 있다. 본 연구에서는 Amorphous Solar Cell의 전극에 사용되는 ITO의 온도 Stress에 따른 특성을 연구함으로써 Engineer의 근본적인 이슈인 저비용, 고효율에 초점을 맞추어 소자특성을 확인해 보도록 한다. Glass에 E-beam evaporation 장비를 이용하여 ITO를 증착하였고 제작된 소자를 200, 250, 300, 350$^{\circ}C$의 온도변수를 두어 1시간동안 Annealing 하였다. 각 Annealing 온도에 따른 Sheet resistivity,와 visible 영역의 transmittant를 측정하였다. visible영역에서의 transmittant는 Annealing 200$^{\circ}C$에서 300$^{\circ}C$로 온도가 증가함에 따라 transmittant는 증가하다가 350$^{\circ}C$에서 감소하였다. Sheet resistivity의 경우 Annealing 200$^{\circ}C$에서 300$^{\circ}C$로 온도가 증가함에 따라 ITO의 Sheet resistivity가 줄어들다가 350$^{\circ}C$에서 증가하였다. 300$^{\circ}C$로 Annealing한 ITO가 가시광선 영역에서 transmittant가 가장 높은 80%로 측정 되었다. Sheet resistivity역시 300$^{\circ}C$로 Annealing한 ITO가 8${\Omega}/{\Box}$로 가장 낮았다. Annealing 온도가 ITO의 electrical 특성과 optical 특성에 변화를 주었음을 알 수 있었다. Resistivity가 낮은 ITO 전극으로 박막 셀을 제작한다면 좋은 효율을 얻을 수 있을 거라 생각된다.

• Journal of the Korean Vacuum Society
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• v.16 no.1
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• pp.23-26
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• 2007

The effect of annealing parameters on the micro-structure of Mg alloy AZ91D was investigated by photo reflectance spectroscopy and electron microscopy. The reflectance spectra show that carbon defects exist in the annealed sample. From the electron microscopy, it is found that the oxide layer on the annealed sample has better uniformity.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.22 no.11
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• pp.999-1003
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• 2009

In this paper, CdS thin films well-known to window layer for solar cell were fabricated by means of vacuum evaporation method treated with different substrate heating. During film fabrication the substrates were heated at 50, 75 and $100^{\circ}C$, respectively. The thin films were then annealed at $200^{\circ}C$ in atmosphere, and the electrical and optical properties were investigated. By annealing, the hexagonal structure of films was changed into cubic structure. Their transmissivity was also increased and moved to longer wave band. It was shown that the film fabricated with the substrate heat-treated at $50^{\circ}C$ had the lowest resistivity.

• Proceedings of the Korean Vacuum Society Conference
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• 1999.07a
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• pp.170-170
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• 1999

We studied Nb growth mode on Cu(100) surface by scanning tunneling microscopy (STM) at room temperature. Nb/Cu is immiscible at room temperature and thus is an ideal system for studying surface alloy formation. Initially deposited Nb atoms are incorporated subsurface on Cu(100). After annealing, they are preferentially found at step edges and appear as bright dots surrounded by dark rings. Ordering emerges from step edges as annealed. Ordered ({{{{ SQRT { 5} }$\times${{{{ SQRT { 5} }}}})R 26.6$^{\circ}$phase Nb structure is formed at $\theta$<0.2ML after annealing to 50$0^{\circ}C$. At higher coverage, $\theta$>0.25, annealing leads to p(2$\times$2) phase. due to large mismatch in lattice parameters, the domain is limited to a few tens of nm2. Growth kinetics of the system will be discussed.

• Proceedings of the Korean Vacuum Society Conference
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• 1999.07a
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• pp.102-102
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• 1999

Visible photoluminescence(PL) in si-implanted SiO2 films on crystaline silicon were observed. Thermal oxide films of 1 ${\mu}{\textrm}{m}$ thickness on P-type crystal silicon were made and si+ ions were implanted with 200keV acceleration voltage on ti. Argon laser (wavelength 488nm) and PM tube were used for PL measurements. As annealing time increased at low temperature, the visible PL intensity are increased and the peak positions are changed. On the other hand, with increasing annealing time at high temperature, the visible PL intensity are disappeared. From the PL peaks and intensity changes, XRD results, and TEM observations, we will discuss the origin of PL in Si+-implanted SiO2 films with oxygen righ defects and silicon rich defects.

• Korean Journal of Materials Research
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• v.27 no.5
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• pp.242-247
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• 2017

ZnO film was prepared on a p-type Si wafer and then annealed at various temperatures in air and vacuum conditions to research the electrical properties and bonding structures during the annealing processes. ZnO film annealed in atmosphere formed a crystal structure owing to the suppression of oxygen vacancies: however, ZnO annealed in vacuum had an amorphous structure after annealing because of the increment of the content of oxygen vacancies. Schottky contact was observed for the ZnO annealed in an air. O 1s spectra with amorphous structure was found to have a value of 529 eV; that with a crystal structure was found to have a value of 531.5 eV. However, it was observed in these results that the correlation between the electronic characteristics and the bonding structures was weak.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1996.05a
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• pp.224-227
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• 1996

Platinum thin films were deposited on Si-wafer by DC magnetron sputtering for RTD (Resistance Thermometer Devices). We investigated the physical and electrical characteristics of these films under various conditions, the input power, working vacuum, temperature of substrate and also after annealing these films. The deposition rate was increased with increasing the input power but decreased with increasing Ar gas pressure. The resistivity were decreased wish increasing the temperature of substrate and the annealing time at 1000$^{\circ}C$. At substrate temperature 300$^{\circ}C$, input power 7(w/$\textrm{cm}^2$), working vacuum 5mtorr and annealing conditions 1000$^{\circ}C$, 240 min we obtained 10.65${\mu}$Ω$.$cm, resistivity of Pt thin film closed to the bulk value.

• Journal of the Korean Vacuum Society
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• v.1 no.1
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• pp.168-175
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• 1992

The surface and interface morphology as well as the sheet resistance, and uniformity of TiSiz film are significantly improved and the lateral titanium silicide growth over the oxide spacer is minimized by the use of ion beam mixing and rapid thermal annealing in nitrogen ambient. In addition, TiSiz film formations on TiISi and TiISiOz system were also studied.

• Journal of the Korean Vacuum Society
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• v.1 no.1
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• pp.206-211
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• 1992

SIMOX SOI structures were formed by oxygen ion implantation with a dose of 2 1018 ions/cm2 at 180kev and post-implantation annealing at $1250^{\circ}C$ for 6 hours in nitrogen ambient. The oxygen redistribution process during post-implantation annealing was examined by AES and TEM. The electrical property of the structure was investigated by SRP method. We could find oxygen precipitates in SOI layer was discussed. And the limiting factor to the decrease of the precipitates during post-implantation annealing was discussed also.

• Electrical & Electronic Materials
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• v.9 no.9
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• pp.911-917
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• 1996

Platinum thin films were deposited on Si-wafer by DC rnagnetron sputtering for RTD (resistance thermometer devices). We investigated the physical and electrical characteristics of these films under various conditions, the input power, working vacuum, temperature of substrate and also after annealing these films. The deposition rate was increased with increasing the input power but decreased with increasing Ar gas pressure. The resistivity and sheet resistivity were decreased with increasing the temperature of substrate and the annealing time at 1000.deg. C. At substrate temperature of >$300^{\circ}C$, input power of 7 w/cm$^{2}$, working vacuum of 5 mtorr and annealing conditions of 1000.deg. C and 240 min, we obtained 10.65.mu..ohm..cm, resistivity of Pt thin films and 3800-3900 ppm/.deg. C, TCR(temperature coefficient of resistance). These values are close to the bulk value. These results indicate that the Pt thin films deposited by DC magnetron sputtering have potentiality for the development of Pt RTD temperature sensor.