• 한국진공학회지
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• 제4권S2호
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• pp.69-74
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• 1995

The effects of TCA incorporation during annealing process on the SIMOX quality is studied. Silicon wafers are implanted with heavy dose of oxygen ions, and are annealed at $1300^{\circ}C$ for 4 hours. The annealing process is splitted into three conditions due to some differences of low temperature preliminary annealing step which are without pre-annealing step. The specimens are analyzed by several methods, such as AES, XTEM, and TRXFA. TCA incorporation during pre-annealing step is effective in dislocation density reduction and heavy metal content reduction.

• 한국광학회지
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• 제11권3호
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• pp.152-157
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• 2000

전자빔 증착된 Indium Tin Oxide(ITO) 박막의 진공 열처리 효과를 알아보기 위해 진공 및 대기 중에서 열처리 온도( $200-335^{\circ}C$) 및 산소 분압 변화($1\times^10^{-5}-1$\times10^{-4} torr$)에 따른 투과율과 면-저항의 변화 및 결정구조를 조사하였다. 시편은 (222) 계열의 면의로 우세 배향된 다결정박막이다. 진고 열처리 변수를 적절하게 조절하여 $62\Omega/\box$의 면저항과 99%(500nm) 이상의 투과율을 가지는 고품질의 박막을 얻을 수 있었다.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2013년도 제44회 동계 정기학술대회 초록집
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• pp.197-197
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• 2013

Kinetic energy를 가진 입자의 물리적 충돌을 이용하여 기판의 가열 없이 박막 표면만을 열처리할 수 있는 EBA technology는 차세대 첨단 기술로 활용될 무수한 잠재력이 있다. (주)인포비온에서는 EBA source를 이용한 다양한 응용을 연구했으며 또한 이의 결과를 산업적 양산에 이용하고자 EBA source를 적용한 대형 시스템을 개발했다. 이에 EBA technology의 소개와 이를 활용한 연구 결과, 양산형 시스템 등을 소개하고자 한다.

• 한국진공학회지
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• 제2권4호
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• pp.468-473
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• 1993

Damages on Si substrate induced by Ar ion implantation and it annealing behavior during rapid thermal annealing were investigated by the cross-sectional TEM (transmissin electron microscopy), RB(Rutherfordbackscattering) spectra an dthermal wave (TW) modulation reflectance methods. Continuous amorphous layer extending to the surface were generated by Ar ion implantation for higher doses than 1 $\times$1015cm-2. The recrystallization of the amorphous layer prodeeded as the annealing temperature increased . However the amorphous /crystal interfacial undulations caused the micro twins and damage clusters. Damage clusters generated by lower doses than 1 $\times$1015 cm-2 disappeared slowly as the annealing temperature increased, but even at 110$0^{\circ}C$ a few damage clusters still remained.

• 반도체디스플레이기술학회지
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• 제15권1호
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• pp.70-75
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• 2016

GZO films prepared on ITO glasses were annealed at various temperatures in a vacuum condition to research the relationship between oxygen vacancies and optical properties. GZO films after annealing in a vacuum showed the various optical-chemical properties depending on the annealing temperatures and oxygen gas flow rate during the deposition. The oxygen vacancy of GZO film prepared by oxygen gas flows of 22 sccm increased with increasing the annealing temperatures, because of the extraction of oxygen by the annealing. But the intensity of photoluminance of GZO with 22 sccm decreased in accordance with the annealing temperature, because of the reduction of ionized charge carriers. The oxygen vacancy by the extraction of oxygen enhanced a depletion, so the widen depletion had the strong Schottky barrier and the PL intensity due to the low carrier density decreased.

• 열처리공학회지
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• 제25권2호
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• pp.85-89
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• 2012

Transparent conductive ZnO/Ag/ZnO (ZAZ) multilayer films were deposited by Radio frequency (RF) magnetron sputtering and direct current (DC) magnetron sputtering. The effects of post deposition vacuum annealing temperature on the structural, electrical and optical properties of the ZAZ multilayer films were investigated. The thickness of ZAZ films is kept constant at ZnO 50 nm/Ag 5nm/ZnO 45 nm, while the vacuum annealing temperatures were varied from 200 and $400^{\circ}C$, respectively. As-deposited ZAZ films exhibit a sheet resistance of $6.1{\Omega}/{\Box}$ and optical transmittance of 72.7%. By increasing annealing temperature to $200^{\circ}C$, the resistivity decreased to as low as $5.3{\Omega}/{\Box}$ and optical transmittance also increased to as high as 82.1%. Post-deposition annealing of ZAZ multilayer films lead to considerably lower electrical resistivity and higher optical transparency, simultaneously by increased crystallization of the films.

• 한국정보디스플레이학회:학술대회논문집
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• 한국정보디스플레이학회 2004년도 Asia Display / IMID 04
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• pp.703-706
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• 2004

This paper deals with the various sealing conditions in a vacuum and the discharge characteristics. The MgO thin film is prepared by e-beam evaporation method. Sealing process was performed in a vacuum at panel temperature of 430 $^{\circ}C$. We find the cracks on the MgO film surface, which results in higher discharge voltage and lower luminous efficiency. The vacuum in-line sealing technology does not require additional annealing process but induces the MgO cracks because of the high temperature sealing cycle in a vacuum. Therefore we modify the vacuum in-line sealing cycle which the MgO cracks are not found and the good characteristics of plasma displays are found in higher sealing pressure at sealing temperature of 430 $^{\circ}C$.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2014년도 제46회 동계 정기학술대회 초록집
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• pp.195.2-195.2
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• 2014

Nanodiamond (ND) is composed of inner diamond core and outer graphite shell. The size of ND used in this study was about 5 nm. The ND solution was dropped on silicon substrate and dried in air. Dried ND sample was purified by using annealing method in air. Then, 40 keV Fe ion was irradiated into the sample. The dose was varied from $1{\times}10^{14}$ to $1{\times}10^{16}ions/cm^2$. The post annealing was performed at 1073 K in the vacuum to recover diamond structure. The annealing at 873 K in air was performed to remove the outer graphite shell. The structure of ND was confirmed by X-ray diffraction (XRD) and Raman spectroscopy. We will present the detailed data and results in the conference.

• Journal of Korean Vacuum Science & Technology
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• 제6권2호
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• pp.79-83
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• 2002

As Ag does not form my silicide on Si surfaces, Ag wire is a candidate for self-assembled nanowire on the reconstructed and single-domain Si(5 5 12)-2 $\times$ 1. In the present study, various Ag coverages and post-annealing temperatures had been tested to fabricate a Ag nanowire with high aspect ratio. When Ag coverage was less than 0.03 ML and the post-annealing temperature was 500(C, Ag atoms preferentially adsorbed on the tetramer sites resulting in Ag wires with an inter-row spacing of ~5 nm. However, its aspect ratio is relatively small and its height is also not even. On the other hand, the Ag-posited surface completely loses its reconstruction even with the same annealing at 500 $\^{C}$ if the initial coverage exceeds 0.05 ML. But the additional subsequent annealing at 700$\^{C}$ and slow-cooling process recovers the well-ordered Ag chain with relatively high aspect ratio on the same tetramer sites. It can be understood that, in the double step annealing process, the lower temperature annealing is required for cohesion of adsorbed Ag atoms and the higher temperature annealing is for providing Ag atoms to the tetramer sites.

• 한국세라믹학회지
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• 제53권4호
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• pp.450-455
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• 2016

Color change in single-crystal, yellow, red, purple, and colorless cubic zirconias (CZs) was investigated as a function of annealing in vacuum and air atmosphere at $800-1400^{\circ}C$ for 30 min, for development of a damascene process of plugging a precious metal paste at the elevated temperature. Coloring-element contents of the CZs were evaluated using WD-XRF, and the color change determined visually by naked eye, and using a digital camera and UV-Vis-NIR color analyzer. WD-XRF showed that all of the CZs had cubic-phase stabilizer elements and coloring elements. All CZs that underwent vacuum annealing exhibited a slight color change at $<900^{\circ}C$, while their colors began to change to black at $1100^{\circ}C$, and became opaque black at $1400^{\circ}C$. After air annealing, there was almost no color change up to $1400^{\circ}C$. Since red and purple CZs showed greater color difference (CD) values than the others, the degree of CD is likely to depend on the original color of the CZ due to the different stabilities of their coloring elements during annealing. Based on our results, it is suggested that annealing in air at $<900^{\circ}C$ is advantageous, and assorted colored CZs can be used for precious metal damascene.