• Journal of the Korean Vacuum Society
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• v.19 no.3
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• pp.224-229
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• 2010

Indium oxide $(In_2O_3)$ thin films have been prepared on glass substrate by using radio-frequency reactive magnetron sputtering with changing the oxygen flow ratio. The substrate temperature was kept at a fixed value of $400^{\circ}C$, and the sputtering gas and reactive gas were supplied with argon and oxygen, respectively. The oxygen partial flow ratio was varied by controlling the amount of oxygen with respect to the total mixed gases, 10%, 20%, 30%, 40%, and 50%. The optical, electrical, and structural properties of the deposited thin films were investigated by using ultraviolet-visible-near infrared spectrophotometer, Hall measurement, and X-ray diffractometer and scanning electron microscopy. The $In_2O_3$ thin film deposited at 20% of oxygen flow ratio showed an average transmittance of 86% in the wavelength range of 430~1,100 nm, an electrical resistivity of $1.1{\times}10^{-1}{\Omega}cm$. The results show that the transparent conducting films with optimum conditions can be achieved by controlling the oxygen flow ratio.

• Proceedings of the Korean Vacuum Society Conference
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• 2000.02a
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• pp.78-78
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• 2000

다결정 실리콘-게르마늄 (poly-SiGe)은 태양전지 개발에 있어서 중요한 물질이다. 우리는 소량의 Ge(x=0.05)으로부터 다량의 Ge(x=0.67)을 함유한 수소화된 비정질 실리콘-게르마늄 (a-SiGe:H) 박막의 고상결정화 과정을 ESR (electron spin resonance)방법으로 조사해보았다. 먼저 PECVD 방법으로 Corning 1737 glass 위에 a-Si1-xGex:H 박막을 증착시켰다. 증착가스는 SiH4, GeH4 가스를 썼으며, 기판온도는 20$0^{\circ}C$, r.f. 전력은 3W, 증착시 가스압력은 0.6 Torr 정도이었다. 증착된 a-SiGe:H 박막은 $600^{\circ}C$ N2 분위기에서 다시 가열되어 고상결정화 되었고, 결정화 정도는 XRD (111) peak의 세기로부터 구해졌다. ESR 측정은 상온 x-band 영역에서 수행되었다. 측정된 ESR스팩트럼은 두 개의 Gaussian 함수로써 Si dangling-bond와 Ge dangling-bond 신호로 분리되었다. 가열 초기의 a-SiGe:H 박막 결함들의 스핀밀도의 증가는 수소 이탈에 기인하고, 또 고상결정화 과정에서 결정화된 정도와 Ge-db 스핀밀도의 변화는 서로 깊은 상관관계가 있음을 알 수 있었다. 특히 Ge 함유량이 큰 박막 (x=0.21, 0.67)에서 뿐만 아니라 소량의 Ge이 함유된 박막(x=0.05)에서도 Ge dangling-bond가 Si dangliong-bond 보다 고상결정화 과정에서 더 중요한 역할을 한다는 것을 알수 있었다. 또한 초기 열처리시 Si-H, Ge-H 결합에서 H의 이탈로 인하여 나타나는 Si-dangling bond, Ge-dangling bond 스핀밀도의 최대 증가 시간은 x 값에 의존하였는데 이러한 결과는 x값에 의존하는 Si-H, Ge-H 해리에너리지로 설명되어 질 수 있다. 층의 두께가 500 미만인 커패시터의 경우에 TiN과 Si3N4 의 계면에서 형성되는 슬릿형 공동(slit-like void)에 의해 커패시터의 유전특성이 파괴된다는 사실을 알게 되었으며, 이러한 슬릿형 공동은 제조 공정 중 재료에 따른 열팽창 계수와 탄성 계수 등의 차이에 의해 형성된 잔류응력 상태가 유전막을 기준으로 압축응력에서 인장 응력으로 바뀌는 분포에 기인하였다는 사실을 확인하였다.SiO2 막을 약화시켜 절연막의 두께가 두꺼워졌음에도 기존의 SiO2 절연막의 절연 파괴 전압 및 누설 전류오 비교되는 특성을 가졌다. 이중막을 구성하고 있는 안티퓨즈의 ON-저항이 단일막과 비교해 비슷한 것을 볼 수 잇는데, 그 이유는 TiO2에 포함된 Ti가 필라멘트에 포함되어 있어 필라멘트의 저항을 감소시켰기 때문으로 사료된다. 결국 이중막을 구성시 ON-저항 증가에 의한 속도 저하 요인은 없다고 할 수 있다. 5V의 절연파괴 시간을 측정한느 TDDB 테스트 결과 1.1$\times$103 year로 기대수치인 수십 년보다 높아 제안된 안티퓨즈의 신뢰성을 확보 할 수 있었다. 제안된 안티퓨즈의 이중 절연막의 두께는 250 이고 프로그래밍 전압은 9.0V이고, 약 65$\Omega$의 on 저항을 얻을수 있었다.보았다.다.다양한 기능을 가진 신소재 제조에 있다. 또한 경제적인 측면에서도 고부가 가치의 제품 개발에 따른 새로운 수요 창출과 수익률 향상, 기존의 기능성 안료를 나노(nano)화하여 나노 입자를 제조, 기존의 기능성 안료에 대한 비용 절감 효과등을 유도 할 수 있다. 역시 기술적인 측면에서도 특수소재 개발에 있어 최적의 나노 입자 제어기술 개발 및 나노입자를 기능성 소재로 사용하여 새로운 제품의 제조와 고압 기상 분사기술의 최적화에 의한 기능성 나노 입자 제조 기술을 확립하고 2차 오염 발생원인 유기계 항균제를 무기계 항균제로 대체할 수 있다. 이와 더불

• Proceedings of the Korean Vacuum Society Conference
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• 2000.02a
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• pp.62-62
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• 2000

비접촉식 온도센서는 물체에서 방출하는 적외선 등의 복사신호를 열에너지로 전환하고 이를 다시 전기신호로 2차 에너지 변환하여 온도를 감지하는 센서로 인체 검지를 응용한 다양한 상품 및 교통, 방재, 빌딩 시스템 등의 분야에 널리 응용되고 있다. 비접촉식 적외선 센서는 열에너지를 전기에너지로 변환하는 방법에 따라 양자형과 열형으로 구분되며, 이중 양자형은 광전도나 광기전력 효과 등을 이용하여 감도 및 응답성이 우수하다는 장점을 지니고 있지만, 소자부를 80K 이하 온도로 유지시키는 냉각을 필요로 하므로 대형 제작이 불가피하고 그 용도가 제한적이다. 열형은 냉각이 필요 없고 소형으로 제작가능한 장점을 지니고 있어 써모 파일이나 초전체를 이용한 번용 센서가 보급되고 있다. 그러나 써모파일의 경우 출력되는 전기 신호가 미약하여 감도 및 응답성을 향상하기 위해 구조가 복잡하고, 특히 모터초퍼나 저항을 전압으로 변환시키는 전력기 등이 필요로 하는 단점을 지니고 있다. 따라서 이러한 문제점을 보완하기 위해 열전재료 박막을 이용한 적외선 센서를 개발하려는 노력이 진행중에 있다. 열전박막을 이용한 적외선 센서는 열전재료의 Seebeck 현상을 이용하여 열에너지에서 전기에너지의 변환이 자가발전으로 이루어져 offset과 외부 바이어스를 필요로 하지 않는다. 또한 작은 온도 변화에도 그 감도와 응답성이 높고, 출력신호가 커서 증폭기 등이 불필요한 장점을 지니고 있다. 특히 초전형 센서가 상온에서도 기판에 대한 열 확산을 제어해야 하는 문제점을 갖는 반면, 열전박막형 적외선 센서는 고온에서도 안정된 출력 신호를 얻을 수 있어 그 활용 온도 범위가 크게 확대될 것으로 기대된다. 본 실험에서는 우수한 열전특성을 갖는 (Bi1-xSbx)2Te3 박막을 얻기 위해 열팽창계수가 작고 알칼리 원소가 0.3% 이하로 포함되어 있는 corning glass(# 7059)를 기판으로 사용하였다. 또한 최적의 열전특성을 나타내는 조성을 실험적으로 구하기 위해 (Bi0.2Sbx)2Te3 조성의 합금 타？ 위에 Bi2Te3 및 Sb2Te3 chip을 올려놓고 그 면적을 변화시켜 다양한 조성의 열전박막을 증착하였다. 열전박막의 증착시 산화와 오염에 의한 열전특성 변화를 최소화하기 위해 초기진공도를 1$\times$10-6 Torr로 하였으며, Ar 가스를 흘려주어 2$\times$102 Torr 의 증착진공도를 유지하였다. 열전박막을 증착하기 전에 기판을 10분간 200W의 출력으로 RF 처리하였으며, 30$0^{\circ}C$에서 33 /sec의 속도로 (Bi1-xSbx)2Te3 박막을 증착하였다. 이와 같이 제조된 (Bi1-xSbx)2Te3 박막의 미세구조를 SEM으로 관찰하고 EDS로 조성을 분석하였으며, XRD를 이용하여 결정성을 관찰하였다. 또한 (Bi1-xSbx)2Te3 박막의 Seebeeck 계수 및 전기비저항을 측정하고 증착된 박막조성, 결정상, 미세구조와 열전특성간의 상관관계를 고찰하였다.

• Proceedings of the Korean Vacuum Society Conference
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• 2010.02a
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• pp.44-45
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• 2010

We are currently conducting studies on culturing and biocompatibility assessment of various cells such as neural stem cells and induced pluripotent stem cells(IPS cells) on carbon nanotube (CNT), on nerve regeneration electrodes, and on silicon wafers with a focus on developing nerve integrated CNT based bio devices for interfacing with living organisms, in order to develop brain-machine interfaces (BMI). In addition, we are carried out the chemical modification of carbon nanotube (mainly SWCNTs)-based bio-nanosensors by the plasma ion irradiation (plasma activation) method, and provide a characteristic evaluation of a bio-nanosensor using bovine serum albumin (BSA)/anti-BSA binding and oligonucleotide hybridization. On the other hand, the researches in the case of "novel plasma" have been widely conducted in the fields of chemistry, solid physics, and nanomaterial science. From the above-mentioned background, we are conducting basic experiments on direct irradiation of body tissues and cells using a micro-spot atmospheric pressure plasma source. The device is a coaxial structure having a tungsten wire installed inside a glass capillary, and a grounded ring electrode wrapped on the outside. The conditions of plasma generation are as follows: applied voltage: 5-9 kV, frequency: 1-3 kHz, helium (He) gas flow: 1-1.5 L/min, and plasma irradiation time: 1-300 sec. The experiment was conducted by preparing a culture medium containing mouse fibroblasts (NIH3T3) on a culture dish. A culture dish irradiated with plasma was introduced into a $CO_2$-incubator. The small animals used in the experiment involving plasma irradiation into living tissue were rat, rabbit, and pick and are deeply anesthetized with the gas anesthesia. According to the dependency of cell numbers against the plasma irradiation time, when only He gas was flowed, the growth of cells was inhibited as the floatation of cells caused by gas agitation inside the culture was promoted. On the other hand, there was no floatation of cells and healthy growth was observed when plasma was irradiated. Furthermore, in an experiment testing the effects of plasma irradiation on rats that were artificially given burn wounds, no evidence of electric shock injuries was found in the irradiated areas. In fact, the observed evidence of healing and improvements of the burn wounds suggested the presence of healing effects due to the growth factors in the tissues. Therefore, it appears that the interaction due to ion/radicalcollisions causes a substantial effect on the proliferation of growth factors such as epidermal growth factor (EGF), nerve growth factor (NGF), and transforming growth factor (TGF) that are present in the cells.

• Journal of the Korean Vacuum Society
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• v.19 no.6
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• pp.475-482
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• 2010

Polycrystalline NiO thin films were deposited on glass substrate by RF magnetron sputtering using only Ar as a plasma sputter gas. based on the analysis of x-ray diffraction (XRD), NiO films had a polycrystalline cubic (NaCl type) structure. NiO thin films grown below and above $200^{\circ}C$ showed preferred orientation of (111) and (220) respectively. It showed colossal change in electrical resistivity as much a ${\sim}10^7$ order form an insulating state of $105\;{\Omega}cm$ below $200^{\circ}C$ to a conducting state of $10^{-2}{\sim}10^{-1}\;{\Omega}cm$ above $300^{\circ}C$ such a Mott metal-insulator transition (MIT) in polycrystalline.

• Proceedings of the Korean Vacuum Society Conference
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• 2000.02a
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• pp.174-174
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• 2000

A strong antiferromagnetic coupling in Fe/Si multilayered films (MLF) had been recently discovered and much consideration has been given to whether the coupling in the Fe/Si MLF system has the same origin as the metal/metal MLF. Nevertheless, the nature of the interfacial ron silicide is still controversial. On one hand, a metal/ semiconductor structure was suggested with a narrow band-gap semiconducting $\varepsilon$-FeSi spacer that mediates the coupling. However, some features show that the nature of coupling can be well understood in terms of the conventional metal/metal multilayered system. It is well known that both magneto-optical (MO) and optical properties of a metal depend strongly on their electronic structure that is also correlated with the atomic and chemical ordering. In this study, the nature of the interfacial regions is the Fe/Si multilayers has been investigated by the experimental and computer-simulated MO and optical spectroscopies. The Fe/Si MLF were prepared by rf-sputtering onto glass substrates at room temperature with the number of repetition N=50. The thickness of Fe sublayer was fixed at 3.0nm while the Si sublayer thickness was varied from 1.0 to 2.0 nm. The topmost layer of all the Fe/Si MLF is Fe. In order to carry out the computer simulations, the information on the MO and optical parameters of the materials that may constitute a real multilayered structure should be known in advance. For this purpose, we also prepared Fe, Si, FeSi2 and FeSi samples. The structural characterization of Fe/Si MLF was performed by low- and high -angle x-ray diffraction with a Cu-K$\alpha$ radiation and by transmission electron microscopy. A bulk $\varepsilon$-FeSi was also investigated. The MO and optical properties were measured at room temperature in the 1.0-4.7 eV energy range. The theoretical simulations of MO and optical properties for the Fe/Si MLF were performed by solving exactly a multireflection problem using the scattering matrix approach assuming various stoichiometries of a nonmagnetic spacer separating the antiferromagnetically coupled Fe layers. The simulated spectra of a model structure of FeSi2 or $\varepsilon$-FeSi as the spacer turned out to fail in explaining the experimental spectra of the Fe/Si MLF in both intensity and shape. Thus, the decisive disagreement between experimental and simulated MO and optical properties ruled out the hypothesis of FeSi2 and $\varepsilon$-FeSi as the nonmagnetic spacer. By supposing the spontaneous formation of a metallic ζ-FeSi, a reasonable agreement between experimental and simulated MO and optical spectra was obtained.

• 한국신재생에너지학회:학술대회논문집
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• 2010.06a
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• pp.98.2-98.2
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• 2010

$CuInS_2$ thin films were synthesized by sulfurization of Cu/In Stacked elemental layer deposited onto glass Substrates by vacuum furnace annealing at temperature 200[$^{\circ}C$]. And structural and electrical properties were measured in order to certify optimum conditions for growth of the ternary compound semiconductor $CuInS_2$ thin films with non-stoichiometry composition. $CuInS_2$ thin film was well made at the heat treatment 200[$^{\circ}C$] of SLG/Cu/In/S stacked elemental layer which was prepared by thermal evaporator, and chemical composition of the thin film was analyzed nearly as the proportion of 1 : 1 : 2. Physical properties of the thin film were investigated at various fabrication conditions substrate temperature, annealing and temperature, annealing time by XRD, FE-SEM and hall measurement system. At the same time, carrier concentration, hall mobility and resistivity of the thin films was $9.10568{\times}10^{17}$ [$cm^{-3}$], 312.502 [$cm^2/V{\cdot}s$] and $2.36{\times}10^{-2}$ [${\Omega}{\cdot}cm$], respectively.

• Transactions of the Korean Society of Mechanical Engineers A
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• v.37 no.2
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• pp.279-285
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• 2013

The feasibility of substituting a composite mold for an aluminum mold in the fabrication of a small ship propeller was investigated. A small three-blade aluminum propeller was used as a plug for manufacturing the composite mold. A GRPG composite mold and propeller were made from an unsaturated polyester resin, Epovia gelcoat, and woven and mat glass fibers using the compression and vacuum method at room temperature. The hardness and surface roughness and the strength and deformation of the compression and suction molds were experimentally determined. The results were compared with the ISO 484/2 standard and some aluminum alloy materials. The results showed that the deformation of the mold satisfied the tolerance of the thickness of the blade. Some characteristics of the GRPG composite mold were better than those of the aluminum alloy mold (surface smoothness, weight, performance, and cost), and some characteristics were similar (detachment ability and life-cycle). Therefore, the composite mold is considered suitable for the fabrication of a small composite ship propeller.

• ETRI Journal
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• v.24 no.4
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• pp.290-298
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• 2002

We present, for the first time, a prototype active-matrix field emission display (AMFED) in which an amorphous silicon thin-film transistor (a-Si TFT) and a molybdenum-tip field emitter array (Mo-tip FEA) were monolithically integrated on a glass substrate for a novel active-matrix cathode (AMC) plate. The fabricated AMFED showed good display images with a low-voltage scan and data signals irrespective of a high voltage for field emissions. We introduced a light shield layer of metal into our AMC to reduce the photo leakage and back channel currents of the a-Si TFT. We designed the light shield to act as a focusing grid to focus emitted electron beams from the AMC onto the corresponding anode pixel. The thin film depositions in the a-Si TFTs were performed at a high temperature of above 360°C to guarantee the vacuum packaging of the AMC and anode plates. We also developed a novel wet etching process for $n^+-doped$ a-Si etching with high etch selectivity to intrinsic a-Si and used it in the fabrication of an inverted stagger TFT with a very thin active layer. The developed a-Si TFTs performed well enough to be used as control devices for AMCs. The gate bias of the a-Si TFTs well controlled the field emission currents of the AMC plates. The AMFED with these AMC plates showed low-voltage matrix addressing, good stability and reliability of field emission, and good light emissions from the anode plate with phosphors.

• Korean Journal of Materials Research
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• v.19 no.2
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• pp.108-110
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• 2009

Transparent Sn-doped $In_2O_3$ (ITO) single-layer and ITO/Au/ITO multilayer films were deposited on glass substrates by reactive magnetron sputtering to compare the properties of the films. They were then annealed in a vacuum of $1{\times}10^{-2}\;Pa$ at temperatures ranging from 150 to $450^{\circ}C$ for 20 min to determine the effect of the annealing temperature on the properties of the films. As-deposited 100 nm thick ITO films exhibit a sheet resistance of $130{\Omega}/{\square}$ and optical transmittance of 77% at a wavelength length of 550 nm. By inserting a 5 nm-thick Au layer in ITO/metal/ITO (IMI) films, the sheet resistance was decreased to as low as $20{\Omega}/{\square}$ and the optical transmittance was decreased to as little as 73% at 550 nm. Post-deposition annealing of ITO/Au/ITO films led to considerably lower electrical resistivity and higher optical transparency. In the Xray diffraction pattern, as-deposited ITO films did not show any diffraction peak, whereas as-deposited ITO/ Au/ITO films have Au (222) and $In_2O_3$ (110) crystal planes. When the annealing temperature reached the 150 - $450^{\circ}C$ range, the both diffraction peak intensities increased significantly. A sheet resistance of $8{\Omega}/{\square}$ and an optical transmittance of 82% were obtained from the ITO/Au/ITO films annealed at $450^{\circ}C$.