4H-SiC High Power VJFET with modulation of n-epi layer and channel dimension (N-epi 영역과 Channel 폭에 따른 4H-SiC 고전력 VJFET 설계)
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- Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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- 2010.06a
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- pp.350-350
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- 2010