• 한국정보디스플레이학회:학술대회논문집
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• 2007.08b
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• pp.1348-1351
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• 2007

We demonstrated that the threshold voltage shift owing to a gate-bias stress is originated from the trapped charges at the interface between semiconductor layer and dielectric layer, and such drawback can be settled by applying long-term delay time to the gate electrode.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1997.04a
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• pp.293-296
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• 1997

The experimental system used for vapor deposition polymerization (VDP) from PMDA (Pyromellitic dianhydride) and DDE (4, 4-diaminodiphenyl ether) were changed to PI (polyimide) thin films by thermal curing. The curing temperatures were 20$0^{\circ}C$, 25$0^{\circ}C$, 30$0^{\circ}C$, 35$0^{\circ}C$. When test number was 40, the electric breakdown strengths of PI were 1.21MV/cm, 3.94MV/cm, 4.61MV/cm, 4.55MV/cm according to curing temperatures.

• Proceedings of the Korean Institute of Information and Commucation Sciences Conference
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• 2003.10a
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• pp.589-593
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• 2003

In this paper, we propose that the chaotic behavior analysis in the mobile robot of embedding Chua's equation with obstacle. In order to analysis of chaotic behavior in the mobile robot, we apply not only qualitative analysis such as time-series, embedding phase plane, but also quantitative analysis such as Lyapunov exponent in the mobile robot with obstacle. In the obstacle, we only assume that all obstacles in the chaos trajectory surface in which robot workspace has an unstable limit cycle with Van der Pol equation.

• 한국정보디스플레이학회:학술대회논문집
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• 2002.08a
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• pp.770-772
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• 2002

A new dry-processing method of organic gate dielectric film in field-effect transistors (FETs) was proposed. The method use vapor deposition polymerization (VDP) that is continuous and low temperature process. It has the advantages of shadow mask patterning and dry processing in flexible low-cost large area applications. Here, 80 nm-thick Al as a gate electrode was evaporated through shadow mask. Gate insulators used two different polyimides. The one material was 4,4'-oxydiphtahlic anhydride (ODPA) and 4,4'-oxydianiline (ODA). Another was 2,2-bis(3,4-dicarboxyphenyl) Hexafluoropropane Dianhydride (6FDA) and 4,4' -oxydianiline (ODA). These were co-deposited by high-vaccum thermal-evapora and cured at 150 $^{\circ}C$ for 1 hour, respectively. Pentacene as a semiconductor and 100 nm-thick Au as a source and drain electrode were evaporated through shadow mask.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.13 no.1
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• pp.1-5
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• 2000

Optical and electrical properties of GaSe:Er\ulcorner single crystals grown by the Bridgenman technique have been investigated by using optical absorption and h\Hall-effect measurement system. The Hall coefficients were mea-sured by using a high impedance electrometer in the temperature range from 360K to 150K. The temperature dependence of hole concentration show the characteristic of a partially compensated p-type semiconductor. Carrier density(N\ulcorner) of GaSe doped with Erbium was measured about 3.25$\times$10\ulcorner [cm\ulcorner] at temperature 300K, which was higher than undoped specimen. Photon energy gap (E\ulcorner) of GaSe:Er\ulcorner specimen was measured about 1.79eV.

• Proceedings of the Korean Society of Broadcast Engineers Conference
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• 2012.07a
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• pp.392-393
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• 2012

영상에서의 화질 평가는 학술적으로나 산업적으로나 중요한 문제이지만 지금까지 주로 쓰여온 PSNR 과 같은 방법은 실제 사람이 인식하는 평가에 잘 부합하지 못하는 문제점이 있었다. 본 논문에서는 모든 밝기 영역에서 영상을 평가할 수 있는 HDR-VDP2 와 주목도 지도를 결합하여 범용적으로 사용이 가능하며 성능도 뛰어난 화질 측정 방법을 제시하고, 다양한 주목도 지도에 대하여 그 성능과 화질 평가 성능 사이의 관계를 살펴본다. 구현에는 주목도 지도를 가중치로 사용함으로써 간단하게 더 좋은 성능의 화질 평가 시스템을 만들었고 이를 실험으로 보였다. 또한 주목도 지도의 성능과 화질 평가 시스템의 성능 사이에는 약한 양의 상관관계가 있는 것으로 나타났는데 주목도 지도와 함께 구조적 특징점들의 정보를 성능 평가 시스템에 포함시키면 더 좋은 결과를 얻을 것으로 기대된다.

• Proceedings of the KIEE Conference
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• 1997.07d
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• pp.1552-1554
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• 1997

In this paper, thin films of PI were fabricated VDPM of dry processes which are easy to control the film's thickness and hard to pollute due to volatile solvents. From FT-IR, PAA thin films fabricated by VDP were changed to PI thin films by thermal curing. From AFM and ellipsometer experimental, the higher curing temperature is, the films thickness decreases and reflectance increases. Therefore, PI could be fabricated stable by increasing curing temperature.

• Proceedings of the Optical Society of Korea Conference
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• 2001.02a
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• pp.232-233
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• 2001

2차 비선형광학 물질이 높은 응용성을 갖기 위해서는 큰 2차 비선형광학 계수뿐만 아니라 넓은 파장 영역에 걸친 투명성을 가지고 있어야 한다. vinylidene fluoride(VDF)와 trifluoroethylene(TrFE)가 공중합된 f(VDf-TrFE) 공중합체는 이러한 조건을 갖추고 있는 강유전성 물질이다. 우리는 몰비율이 72：28인 P(VDF-TrFE)을 ITO기판위에 casting하고 corona 극화한 뒤, 두 개의 입력 파장(1064nm, 532nm)에 대한 2차 조화파 발생 실험을 실시하고 Herman과 Hayden의 마커무의 식을 이용하여 2차 비선형 광학 계수를 측정하였다. (중략)

• Proceedings of the KIEE Conference
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• 1994.07b
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• pp.1394-1396
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• 1994

Polyimide thin films were fabricated an using vapor deposition polymerization apportus, and their FT-IR and TGA characteristics were investigated. The peaks of $720cm^{-1}$ and $1380cm^{-1}$ show C=O stretch mode and C-N stretch mode, and that of the cured polyimide at $350^{\circ}C$ were sturated. $T_d$(Depolymerization temperature) was showed at $405^{\circ}C$ from research of thermal resistivity characteristics by TGA It was possible to fabrication of polyimide thin film by VDPM.

• 한국정보디스플레이학회:학술대회논문집
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• 2007.08a
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• pp.958-961
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• 2007

The electrical characteristics of organic thin-filmtransistor (OTFTs) can be improved by inserting adhesion layer on gate dielectrics. Adhesion layer was used as polymeric adhesion layer deposited on inorganic gate insulators such as silicon dioxide $(SiO_2)$ and it was formed by vapor deposition polymerization (VDP) instead of spin-coating process. The OTFTs obtained the on/off ratio $of{\sim}10^4$, threshold voltage of 1.8V, subthreshold slop of 2.9 V/decade and field effect mobility about $0.01\;cm^2/Vs$.