• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2002.07a
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• pp.190-193
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• 2002

The processing technology of organic thin-film transistors (Ons) performances have improved fur the last decade. Gate insulator layer has generally used inorganic layer, such as silicon oxide which has properties of a low electrical conductivity and a high breakdown field. However, inorganic insulating layers, which are formed at high temperature, may affect other layers termed on a substrate through preceding processes. On the other hand, organic insulating layers, which are formed at low temperature, dose not affect pre-process. Known wet-processing methods for fabricating organic insulating layers include a spin coating, dipping and Langmuir-Blodgett film processes. In this paper, we propose the new dry-processing method of organic gate dielectric film in field-effect transistors. Vapor deposition polymerization (VDP) that is mainly used to the conducting polymers is introduced to form the gate dielectric. This method is appropriate to mass production in various end-user applications, for example, flat panel displays, because it has the advantages of shadow mask patterning and in-situ dry process with flexible low-cost large area displays. Also we fabricated four by four active pixels with all-organic thin-film transistors and phosphorescent organic light emitting devices.

• Proceedings of the Membrane Society of Korea Conference
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• 2003.07a
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• pp.133-135
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• 2003

The removal of dissolved oxygen(DO) from water was studied using a poly(vinyliene fluoride)(PVDF) hollow fiber membrane contactor(HFMC) with the vacuum degassing process(VDP), Asymmetric porous PVDF hollow fiber membranes (HFM) for membrane contactor were prepared by a wet phase inversion method. In spinning of these PVDF hollow fibers, dimethy lacetamide (DMAc), LiCl and pure water were used as a solvent, a pore-forming additive and internal/external coagulant, respectively. The characteristics of the structure(pore size, porosity etc.) of the prepared PVDF HFMs as a function of concentration of pore-forming additive in polymer dope solution were studied. Also, the removal efficiency of DO from water according to flow rates of water, using PVDF HFMC with VDP, was studied. The performance of the asymmetric porous PVDF HFMC and a symmetric porous PP HFMC commercialized were compared. As a result, the asymmetric porous PVDF HFMC showed higher removal efficiency of DO than that of a symmetric porous PP HFMC.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2005.07a
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• pp.70-71
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• 2005

The electrical performances of organic thin-film transistors (OTFTs) have been improved for the last decade. In this paper, it was demonstrated that the electrical characteristics of the organic thin film transistors (OTFTs) were improved by using polymeric material as adhesion layer on gate insulator. We have investigated OTFTs with polyimide adhesion layer which was fabricated by vapor deposition polymerization (VDP) processing and formed by co-deposition of 6FDA and ODA. It was found that the OTFTs with adhesion layer showed better electrical characteristics than with bare layer because of good matching between semiconductor and gate insulator. Our devices of performance are field effect mobility of $0.4cm^2$/Vs, threshold voltage of -0.8 V and on-of current ratio of $10^6$. In addition, to improve the electrical characteristics of OTFT, we have reduced the thickness of adhesion layer up to a few nanometrs.

• Journal of the Korean Vacuum Society
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• v.17 no.3
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• pp.195-198
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• 2008

In this paper, it was demonstrated that organic thin-film transistors (OTFTs) were fabricated with the organic passivation layer by vapor deposition polymerization (VDP) processing. In order to form polymeric film as a passivation layer, VDP process was also introduced instead of spin-coating process, where polymeric film was co-deposited by high-vacuum thermal evaporation from 6FDA and ODA followed by curing. In order to investigate by compared with different passivation layer, the other OTFTs is fabricated to passivation by Polyvinylalcohol using spincoating. We can see that two different ways of passivation layer affect electric characteristic of OTFTs. The initial electric characteristic of OTFTs before passivation such as field effect mobility, threshold voltage, and on-off current ratio are $0.24cm^2/Vs$, -3V, and $10^6$, respectively. Then after polyimide passivation layer, field effect mobility change from $0.24cm^2/Vs$ to $0.26cm^2/Vs$, threshold voltage from -3V to 1V and on-off current ratio from $10^6$ to $10^6$, respectively. In the case of polyvinylalcohol passivation, the initial electric characteristic of OTFTs before passivation such as field effect mobility, threshold voltage, and on-off current ratio are $0.13cm^2/Vs$, 0V, and $10^6$, respectively. Then after polyvinylalcohol passivation layer, field effect mobility changes from $0.13cm^2/Vs$ to $0.13cm^2/Vs$, threshold voltage from 0V to 2V, and on-off current ratio from $10^6$ to $10^5$, respectively.

• Proceedings of the KIEE Conference
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• 2005.07d
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• pp.2852-2854
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• 2005

In this paper, we propose a method to a synchronization of chaotic mobile robots that have unstable limit cycles in a chaos trajectory surface. We assume all obstacles in the chaos trajectory surface have a VDP (Van der Pol) equation with an unstable limit cycle. The proposed methods are assumed that if one of two chaotic mobile robot receives the synchronization command, the other robot also follows the same trajectory during the chaotic robot search on the arbitrary surface.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1996.05a
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• pp.59-62
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• 1996

Plasma displays (PDP) as a large area wall-hanging display device are rabidly developed with flat CRT, TPT LCD and etc. Especially, AC Plasma Display Panels(AC PDPs) have the inherent memory function which is effective for large area displays. The memory function in AC PDPs is caused by the accumulation of the electrical charge on the protecting layer formed on the dielectric layer. This MgO protective layer prevents the dielectric layer from sputtering by ion in discharge plasma and also has the additional important roll in lowering the firing voltage due to the large secondary electron emission coefficient). Until now, the MgO Protective layer is mainly formed by E-Beam evaporation. With increasing the panel size, this process is difficult to attain cost reduction, and are not suitable for large quantity of production. To the contrary, the methode of shuttering are easy to apply on mass production and to enlarge the size of the panel and shows the superior adhesion and uniformity of thin film. In this study, we have prepared MgO protective layer on AC PDP Cell by reactive magnetron sputtering and studied the effect of MgO layer on the surface discharge characteristics of ac PDP.

• The Journal of the Institute of Internet, Broadcasting and Communication
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• v.9 no.4
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• pp.33-38
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• 2009

Recently most of A/V devices are being adopted hi-tech of A VRCP and changed to mobile environment. AVRCP is designed to provide a standard interface to control A/V devices, hi-fi equipment, or others to allow a single remote control or other device to control all the A/V equipment to which a user has access. It may be used in concert with A2DP or VDP. The AVRCP defines two roles, that of a controller and target device. In AVRCP, the controller translates the detected user action to the A/V control signal, and then transmits it to a remote Bluetooth enabled device. It can be small and mixed mobile devices using bluetooth technologies. The functions available for a conventional infrared remote controller can be realized in this protocol. The remote control described in this protocol is designed specifically for A/V control only. We designed new DSP using Adaptive Acoustic Echo Canceller for bluetooth hands free based this AVRCP standard specifications.

• Proceedings of the KIEE Conference
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• 1995.07c
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• pp.1171-1173
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• 1995

Polyimide thin films were fabricated through the vapor deposition polymerization method, and the structure and capacitance characteristics of them were investigated in detail. It was found that the chemical structure and uniformity of the film could be stabilized with curing. The peaks of $720cm^{-l},\;1380cm^{-1}\;and\;1780cm^{-1}$ show C=O stretch mode, C-N stretch mode and carbonyl stretch mode, and those of polyimide which cured over $300^{\circ}C$ were fixed. It was found that capacitance was changed in proportion to temperature.

• Proceedings of the Korean Institute of Intelligent Systems Conference
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• 2003.09a
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• pp.591-594
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• 2003

In this paper, we propose a method to avoidance obstacle in which we assume that obstacle has an unstable limit cycle in the chaos trajectory surface. In order to avoid the obstacle, we assume that all obstacles in the chaos trajectory surface in which has an unstable limit cycle with Van der Pol equation. In this paper show also that computer simulation results are satisfy to avoid obstacle in the chaos trajectory with Chua's circuit equation of one or multi obstacle has an limit cycle with Van der Pol (VDP) efuation and compare to rate of cover in one robot which have random walk and Chua's equation.

• Proceedings of the Korean Fiber Society Conference
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• 2002.04a
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• pp.5-8
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• 2002

Poly(p-xylylene) (PPX) is most easily prepared by a vapor deposition polymerization (VDP) of [2, 2]paracychophane, as described by Gorham.$^1$ Poly(tetrafluoro-p-xylylene) (F-PPX) is of interest in view of its potential applications as an interlayer dielectric material in high-speed integrated circuits, since it has an extremely low dielectric constant (〈2.35).$^2$ (omitted)