• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2000.05b
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• pp.311-315
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• 2000

Vanadate glass in the $LiO_2-P_2O_5-Bi_2O_3-V_2O_5$ system containing 10mol% glass fonner, $P_2O_5$ and $Bi_2O_3$ was prepared by melting the batch in pt. crucible followed by Quenching on the copper plate. We found that $LiO_2-P_2O_5-Bi_2O_3-V_2O_5$ glass-ceramics obtained from nucleation of glass showed signifieantly higher capacity and longer cycle life than conventionally made crystalline $LiV_3O_{8}$. In the present paper, we describe the charge / discharge properties during crystallization process and find the best crystallization condition of $LiO_2-P_2O_5-Bi_2O_3-V_2O_5$ glass as cathod material.

• Journal of the Korean Ceramic Society
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• v.38 no.5
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• pp.438-445
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• 2001

600 W의 마이크로파 출력 하에서 PbO, V$_2$O$_{5}$, TeO$_2$ 및 V$_2$O$_{5}$-PbO-TeO$_2$성분들의 마이크로파 발열 특성을 조사하였다. V$_2$O$_{5}$ 성분의 높은 마이크로파 흡수능에 기인하여 V$_2$O$_{5}$-PbO-TeO$_2$유리상 시편들은 마이크로파를 흡수하여 주어진 온도까지 직접 가열되었다. XRD, OM, SEM 및 고전압 발생 측정기를 통하여 재래식 열 및 마이크로파 공정에서 열처리된 시편들의 결정화 및 전기 전도도의 특성을 비교 조사하였다. PbV$_2$O$_{6}$ 및 Pb$_4$V$_2$O$_{9}$ 결정상들이 마이크로파 열처리된 시편에서는 존재하였다. 그러나, 재래식 열처리된 시편들에서는 존재하지 않는다는 것을 확인하였고, 재래식 열처리된 시편들에 비하여 마이크로파 열처리된 시편들의 전기 전도도 값이 상대적으로 높았다.

• Parasites, Hosts and Diseases
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• v.26 no.2
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• pp.113-116
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• 1988

The pattern of sensory papillae, chaetotaxy, of the cercaria of Clenorchis sinensis was observed, The chaetotaxy was as follows; 5~6 Ci 1, 4~5 Ci 2, 5, ~6 Ci3 at 1st row, 4 Cii 1, 2 Cii2, 4 Cii3, 5~6 Cii4 at 2nd row, 3~4 Ciii 1, 2~3 Ciii 2 at 3rd row, and 2 Civl, 2~3civ2, 2~3 Civ 3, at 4th row, in cephalic region; 2 AiV, 1 AiD, 2 AiiV, 1 AiiD, 2 Aiiiv, 2 AiiiD, 1 AivV, 1 AivD, 1 PiiD, 1 PiiiD, in ventral(V) and dorsal(D) portions of body. Caudal region revealed 2-2-2-2 formula.

• Proceedings of the KIEE Conference
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• 2007.11c
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• pp.138-140
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• 2007

$TiO_2-V_2O_5$ sol was fabricated using sol-gel method and $TiO_2-V_2O_5$ thin films were fabricated using dip-coating method. $V_2O_5$ sol was added 0.01mo1e, 0.03mo1e, 0.05mo1e into $TiO_2$ sol. Viscosity of sol increased fast from about 1,000 minutes and sol began gelation from about 10,000 minutes. As a results of crystalline properties, $V_2O_5$ peaks were not found despite of $V_2O_5$ addition. Endothermic reaction occurred due to evaporation of solvent and dissociation of OH at $80^{\circ}C$. Exothermic reaction occurred due to combustion and oxidation of solvent at $230^{\circ}C$, occurred to combustion and oxidation of alkyl group at $350^{\circ}C$. Thickness of thin films increased $0.1{\sim}0.25{\mu}m$ every a dipping.

• Journal of the Korean Ceramic Society
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• v.19 no.4
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• pp.267-274
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• 1982

The sintering behavior and B-H loop properties of $Li_{0.5O4}$ with the addition of $Nb_2O_5$ and $V_2O_5$ have been investigated by observation of microstructures and measurement of semi-static hysteresis loops. The sintering temperature was lowered by the additions of $Nb_2O_5$ and $V_2O_5$ and the effect of $V_2O_5$ addition was greater than that of $Nb_2O_5$. The abnormal grain growth was observed at about 100$0^{\circ}C$(d:4.6g/㎤) and 85$0^{\circ}C$(d:4.5g/㎤) in the specimens with the addition of $Nb_2O_5$ and $V_2O_5$ respectively. The addition of $Nb_2O_5$ retulted in a large and uniform grain size, and the addition of $V_2O_5$ resulted in a uniform grain size but the final density was lower than that of the pure specimen. The squareness was increased and the coercive force was decreased by the addition of $Nb_2O_5$, and the squareness was decreased and the coercive force was increased by the addition of $V_2O_5$. These effects could be explained by a large and uniform grain size, and by a lower final density of specimens with the addition of $Nb_2O_5$ and $V_2O_5$ respectively.

• KSBB Journal
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• v.9 no.4
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• pp.436-442
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• 1994

The production of itaconic acid by Aspergillus terreus NRRL 1960 was studied. The optimal culture conditional such as pH, inoculum size and medium composition were established. Maximum production of itaconic acid, $19.18g/\ell$, was obtained when the cultivation was carried out at $37^{\circ}C$ and pH 2.5 for 7days, with medium containing 5%(w/v) glucose, 0.5%(w/v) NH4Cl, 0.2%(w/v) yeast extract 0.1%(w/v) CaC12, 0.1%(w/v) MgSO4 and 0.2%(w/v) NaCl. A proper medium for inoculum culture was found to be 2%(w/v) malt extract. The batch production of itaconic acid with free cells in a stirredtank reactor was not efficient compared to the shake-flask culture.

• Journal of the Korean Vacuum Society
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• v.11 no.3
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• pp.151-158
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• 2002

Fabricated were ultra-shallow $p^+-n$ junctions on n-type Si(100) substrates using decaborane $(B_{10}H_{14})$ ion implantation. Decaborane ions were implanted at the acceleration voltages of 5 kV to 10 kV and at the dosages of $1\times10^{12}\textrm{cm}^2$.The implanted specimens were annealed at $800^{\circ}C$, $900^{\circ}C$ and $1000^{\circ}C$ for 10 s in $N_2$ atmosphere through a rapid thermal process. From the measurement of the implantation-induced damages through $2MeV^4 He^{2+}$ channeling spectra, the implanted specimen at the acceleration voltage of 15 kV showed higher backscattering yield than those of the bare n-type Si wafer and the implanted specimens at 5 kV and 10 kV. From the channeling spectra, the calculated thicknesses of amorphous layers induced by the ioin implantation at the acceleration voltages of 5 kV, 10 kV and 15 kV were 1.9 nm, 2.5 nm and 4.3 nm, respectively. After annealing at $800^{\circ}C$ for 10 s in $N_2$ atmosphere, most implantation-induced damages of the specimens implanted at the acceleration voltage of 10 kV were recovered and they exhibited the same channeling yield as the bare Si wafer. In this case, the calculated thickness of the amorphous layer was 0.98 nm. Hall measurements and sheet resistance measurements showed that the dopant activation increased with implantation energy, ion dosage and annealing temperature. From the current-voltage measurement, it is observed that leakage current density is decreased with the increase of annealing temperature and implantation energy.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.14 no.6
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• pp.475-480
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• 2001

Glasses in he system CuO-P$_2$O$_{5}$ -Nb$_2$O$_{5}$ -Nb$_2$O$_{5}$ -V$_2$O$_{5}$ were prepared by a press-quenching method on the copper plate. the glass-ceramics from these glasses were obtained by post-heat treatment, and the crystallization behavior and DC conductivities were determined. The conductivities of the glasses were range from 10$^{-6}$ s.$cm^{-1}$ / at room temperature ,but the conductivities of the glass-ceramics were 10$^{-3}$ s.$cm^{-1}$ / increased by 10$^3$ order. The crystalline product in the glass-ceramics was CuV$_2$O$_{6}$ . the crystal growth of CuV$_2$O$_{6}$ phase increased with heat-treatment conditions. The linear relationship between il($\sigma$T) and T$^{-1}$ suggested that the electrical conduction in the present glass-ceramics would be due to a small polaron hopping(SPH) mechanism.

• Applied Chemistry for Engineering
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• v.21 no.2
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• pp.211-216
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• 2010

$(NH_4)_{0.3}V_2O_5$ nanorods and $V_2O_5$ nanosheets have been synthesized by the reaction of $V_2O_5$ gel via homogeneous precipitation process employing urea and formic acid. The electrochemical and chemical characteristics of these nanomaterials have been investigated using TGA, SEM, FT-IR, XRD, and LSV. The interlayer distance of $(NH_4)_{0.3}V_2O_5$ was about $10.7{\AA}$, and that of $V_2O_5$ synthesized by using formic acid was $14.2{\AA}$. The surface morphology of $(NH_4)_{0.3}V_2O_5$ and $V_2O_5$ showed features that looked like nanorods and nanosheets, respectively. Specific capacity of $(NH_4)_{0.3}V_2O_5$ nanorods prepared at $95^{\circ}C$ was at least 280 mAh/g at 10 mA/g discharge rate.

• Bulletin of the Korean Mathematical Society
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• v.52 no.5
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• pp.1467-1480
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• 2015

Generalized Fibonacci and Lucas sequences ($U_n$) and ($V_n$) are defined by the recurrence relations $U_{n+1}=PU_n+QU_{n-1}$ and $V_{n+1}=PV_n+QV_{n-1}$, $n{\geq}1$, with initial conditions $U_0=0$, $U_1=1$ and $V_0=2$, $V_1=P$. This paper deals with Fibonacci and Lucas numbers of the form $U_n$(P, Q) and $V_n$(P, Q) with the special consideration that $P{\geq}3$ is odd and Q = -1. Under these consideration, we solve the equations $V_n=5kx^2$, $V_n=7kx^2$, $V_n=5kx^2{\pm}1$, and $V_n=7kx^2{\pm}1$ when $k{\mid}P$ with k > 1. Moreover, we solve the equations $V_n=5x^2{\pm}1$ and $V_n=7x^2{\pm}1$.