• Title/Summary/Keyword: V4

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Evaluation of Pess Formability for Ti-6Al-4V Sheet at Elevated Temperature (Ti-합금판재(Ti-6Al-4V)의 고온 성형성 평가)

  • Park, J.G.;Park, N.K.;Kim, Y.S.
    • Transactions of Materials Processing
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    • v.19 no.4
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    • pp.230-235
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    • 2010
  • Titanium alloy sheets have excellent specific strength and corrosion resistance as well as good performance at high temperature. Recently, titanium alloys are widely employed not only for aerospace parts but also for bio prothesis and motorcycle. However, the database is insufficient in the titanium alloy for press forming process. In this study, the effect of temperature on the forming limit diagram was investigated for Ti-6Al-4V titanium alloy sheet through the Hecker‘s punch stretching test at elevated temperature. Experimental results obtained in this study can provide a database for the development of press forming process at elevated temperature of Ti-6Al-4V titanium alloy sheet. From the experimental studies it can be concluded that the formability of Ti-6Al-4V titanium alloy sheet is governed by the ductile failure for the testing temperature. The formability of Ti-6Al-4V titanium alloy sheet at $700^{\circ}C$ increases about 7 times compared with that at room temperature.

Effects of Ventilation Types on Interior Environment of the Enclosed Farrowing-Nursery Pig House (무창 분만 ${\cdot}$ 자돈사 환기 형태가 돈사내 환경에 미치는 영향)

  • Yoo, Y.H.;Song, J.I.;Kang, H.S.;Jeon, B.S.;Kim, T.I.;Kim, H.H.
    • Journal of Animal Environmental Science
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    • v.8 no.2
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    • pp.79-86
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    • 2002
  • This study was conducted to collect basic data about the effects of ventilation types on the interior environment of the enclosed farrowing-nursery pig house in Anseong, Icheon and Jeungpyong. Surveyed ventilation types in the enclosed farrowing-nursery pig house are classified in to 4 types. In V1 type, air enters through a planar slot inlet placed on the juncture of the entering wall and exit through the chimney fan outlet; in V2 type, air enters through a perforated ceiling inlet and exits chimney fan outlet(V2); in V3 type, air enters through a circular duct inlet and exit chimney fan outlet(V3); in V4 type, enters through a circular duct inlet and exits side wall exhaust fan outlet(V4). Temperature, relative humidity, air velocity and ammonia concentration($NH_3$) were measured in the interior of swine building in the summer. Interior temperature was not remarkably different in all ventilation types in this study. However, temperature of the V4 was somewhat lower than that of the other types. Air velocity of the V4 was higher and $NH_3$ concentration of the V4 was lower than those of other ventilation types. It is suggested that the V4 ventilation type be applicable in the enclosed farrowing-nursery pig house in Korea.

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Influence on Meridians Electric Potential for Electrical Ground and Insulation (-침술효과 객관화를 위한 연구- 접지와 절연조건이 경락전위에 미치는 영향)

  • Lee, Yong-Heum;Lee, Qyoun-Jung;Kim, Eun-Geun;Kim, Han-Sung;Shin, Tae-Min
    • Journal of the Korea Institute of Information and Communication Engineering
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    • v.10 no.12
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    • pp.2243-2250
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    • 2006
  • When a patient is positioned at insulated bed and practitioner is positioned at insulated floor, that condition could be a cause of lessening effect in acupuncture practice. We investigated how Ground connection and Insulation could influence on the electrical meridian potential between practitioner and patient during acupuncture practice. We treated 30 normal healthy subjects with acupuncture and measured changes in the electrical potential between the stomach meridian points ST-39 and ST-37 in response to light touch after insertion of a needle at ST-36. At first, we stimulated non-insulated needle and measured electrical potentials for non ground, patient ground only, practitioner ground only, all ground respectively. Then we used insulated needles and measured same as above. Non-insulated all ground subject elicited positive mean potential $44.6{\pm}19.2{\mu}V$ and showed $181.4{\pm}59.7{\mu}V$ peak to peak potential. Practitioner ground only showed negative mean potential of $51.5{\pm}9.3{\mu}V$ and $367.4{\pm}27.8{\mu}V$ of peak to peak potential. Patient ground only revealed no mean potential of $2.9{\pm}1.3{\mu}V$, $16.4{\pm}11.9{\mu}V$ of peak to peak potential. All ground showed no mean potential of $1.6{\pm}0.7{\mu}V$, $3.3{\pm}1.9{\mu}V$ of peak to peak potential. In case of Insulated condition, there elicited no mean potential. Non ground and Practitioner only showed weak value of peak to peak potential as $7.8{\pm}2.6{\mu}V$ and $8.4{\pm}2.5{\mu}V$ each. But patient only and all ground showed no potential as $4.7{\pm}2.2{\mu}V$, $3.4{\pm}2.2{\mu}V$, respectively. Therefore, Ground connection modulate the energy transfer course between practitioner and patient. Insulation block energy transfer but static electrical impulse between practitioner and patient.

The effects of electroacupuncture on stomach and cecum motility in horses (전침자극이 말의 위와 맹장의 운동성에 미치는 영향)

  • Kim, Byung-sun;Choi, Hee-in
    • Korean Journal of Veterinary Research
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    • v.38 no.1
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    • pp.183-199
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    • 1998
  • The effects of electroacupuncture(EA) on gastrointestinal motility were investigated in 6 horses. Three acupuncture points ; Guan Yuan Shu(BL-26), Wei Shu(BL-21) and Da Chang Shu(BL-25) were stimulated for 20 minutes by EA at separate occasions under varying condition ; 2V-1Hz, 2V-5Hz, 2V-30Hz, 4V-1Hz, 4V-5Hz and 4V-30Hz. Myoelectric activity of stomach and cecum was monitored to investigate the gastrointestinal motility. Electromyogram(EMG) recordings were carried out before, 0, 20 minutes after and 40 minutes after the EA stimulation. EMG bipolar electrode was surgically implanted in seromuscular layer of greater curvature in the stomach and between medial band and ventral band in the cecum. The EA stimulation and monitoring were not commenced until 15 days after electrode implantation. The EA stimulation of Wei Shu influenced on stomach motility and that of Da Chang Shu on, cecum motility. However, the EA stimulation of Guan Yuan Shu influenced on both the stomach and the cecum motility. The myoelectrical spike burst amplitude of the stomach and the cecum was significantly(p<0.05) increased by 2V-1Hz stimulation, but the myoelectrical spike burst frequence of the stomach and the cecum was significantly decreased by 2V-30Hz or 4V-30Hz stimulation. The myoelectrical spike burst duration of the stomach and the cecum was significantly lengthened by 4V-30Hz and 2V or 4V-30Hz stimulation, respectively.

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SNU 1.5 MV Van de Graaff Accelerator (V) -on the Operation of the High Voltage Stabilization System- (NU 1.5MV 반데그라프 가속기 (V) -고전압 안정화 계통의 동작-)

  • Bae, Y.D.;Bak, H.I.;Chung, K.H.;Woo, H.J.;Choi, B.H.
    • Nuclear Engineering and Technology
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    • v.19 no.2
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    • pp.115-121
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    • 1987
  • A high voltage stabilization system for the SNU 1.5MV Tandem Van do Graaff accelerator was set up and its operational characteristics were examined and optimized. The optimum parameters of beam transport system were experimentally determined, and under the proper condition the accelerated proton beam current of 350nA was obtained at the target chamber. Without the high voltage stabilization the observed magnitude of voltage fluctuation was $\Delta$V/ V=5.2$\times$10$^{-3}$ without ion beam and 7.2$\times$10$^{-3}$ with ion beam, respectively, and its apparent ripple frequency for voltage fluctuations was about 3Hz or less. Through the optimized operation of the high voltage stabilization system, the terminal voltage fluctuation was reduced to $\Delta$V/V=2.45$\times$10$^{-4}$ and the energy stability with $\Delta$E/E=2.44$\times$10$^{-4}$ was steadily maintained at the 247.3kV terminal voltage, and the stabilization factor was deduced to be 29.4.

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A Simulation Study on the Structural Optimization of a 800 V 4H-SiC Power DMOSFET (800 V급 4H-SiC DMOSFET 전력 소자 구조 최적화 시뮬레이션)

  • Choi, Chang-Yong;Kang, Min-Seok;Bahng, Wook;Kim, Sang-Cheol;Kim, Nam-Kyun;Koo, Sang-Mo
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.22 no.8
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    • pp.637-640
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    • 2009
  • In this work, we demonstrate 800 V 4H-SiC power DMOSFETs with several structural alterations to obtain a low threshold voltage ($V_{TH}$) and a high figure of merit ($V_B\;^2/R_{SP,ON}$), To optimize the device performance, we consider four design parameters; (a) the doping concentration ($N_{CSL}$) of current spreading layer (CSL) beneath the p-base region, (b) the thickness of p-base ($t_{BASE}$), (c) the doping concentration ($N_J$) and width ($W_J$) of a JFET region, (d) the doping concentration ($N_{EPI}$) and thickness ($t_{EPI}$) of epi-layer. These parameters are optimized using 2D numerical simulation and the 4H-SiC DMOSFET structure results in a threshold voltage ($V_{TH}$) below $^{\sim}$3.8 V, and high figure of merit ($V_B\;^2/R_{SP,ON}$>$^{\sim}$200 $MW/cm^2$) for a power MOSFET in $V_B\;^{\sim}$800 V range.

Fabrications and Characterization of High Temperature, High Voltage Ni/6H-SiC and Ni/4H-SiC Schottky Barrier Diodes (고온, 고전압 Ni/4H-SiC 및 Ni/6H-SiC Schottky 다이오드의 제작 및 전기적 특성 연구)

  • Lee, Ho-Seung;Lee, Sang-Wuk;Shin, Dong-Hyuk;Park, Hyun-Chang;Jung, Woong
    • Journal of the Korean Institute of Telematics and Electronics D
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    • v.35D no.11
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    • pp.70-77
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    • 1998
  • Ni/SiC Schottky diodes have been fabricated using epitaxial 4H-SiC and 6H-SiC wafers. The epitaxial n-type layers were grown on $n^{+}$ substrates, with a doping density of 4.0$\times$10$^{16}$ c $m^{-3}$ and a thickness of 10${\mu}{\textrm}{m}$. Oxide-termination has been adopted in order to obtain high breakdown voltage and low leakage current. The fabricated Ni/4H-SiC and Ni/6H-SiC Schottky barrier diodes show excellent rectifying characteristics up to the measured temperature range of 55$0^{\circ}C$. In case of oxide-terminated Schottky barrier diodes, breakdown voltage of 973V(Ni/4H-SiC) and 920V(Ni/6H-SiC), and a very low leakage current of less than 1nA at -800V has been observed at room temperature. On non-terminated Schottky barrier diodes, breakdown voltages were 430V(Ni/4H-SiC) and 160v(Ni/6H-SiC). At room temperature, SBH(Schottky Barrier Height), ideality factor and specific on-resistance were 1.55eV, 1.3, 3.6$\times$10$^{-2}$ $\Omega$.$\textrm{cm}^2$ for Ni/4H-SiC Schottky barrier diodes, and 1.24eV, 1.2, 2.6$\times$10$^{-2}$$\Omega$.$\textrm{cm}^2$/ for Ni/SH-SiC Schottky barrier diodes, respectively. These results show that both Ni/4H-SiC and Ni/6H-SiC Schottky barrier diodes are very promising for high-temperature and high power applications.s..

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Study of the 1,200 V-Class Floating Island IGBT (1,200 V급 Floating Island IGBT의 관한 연구)

  • Kang, Ey Goo
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.29 no.9
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    • pp.523-526
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    • 2016
  • This paper was researched about 1,200 V level floating island IGBT (insulated gate bipolar transistor). Presently, 1,200 V level IGBT is used in Inverter for distributed power generation. We analyzed and compared electrical charateristics of the proposed floating island IGBT and conventional IGBT. For analyzing and comparison, we used T-CAD tool and simulated the electrical charateristics of the devices. And we extracted optimal design and process parameter of the devices. As a result of experiments, we obtained 1,456 V and 1,459 V of breakdown voltages, respectively. And we obatined 4.06 V and 4.09 V of threshold voltages, respectively. On the other hand, on-state voltage drop of floating island IGBT was 3.75 V. but on-state vlotage drop of the conventional IGBT was 4.65 V. Therefore, we almost knew that the proposed floating island IGBT was superior than the conventional IGBT in terms of power dissipation.

Design of Hybrid V2X Communication Module for Electromagnetic Confirmity Evaluation (전자파 적합성 평가를 위한 하이브리드 V2X 통신모듈 설계)

  • Seungkyu Choi;Juwon Lee;Kyuhyeon Kim
    • Journal of Auto-vehicle Safety Association
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    • v.15 no.4
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    • pp.65-70
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    • 2023
  • In the paper, we propose a design method and process of a hybrid V2X communication module that combines WAVE communication, LTE-V2X communication, and legacy LTE communication in evaluating vehicle V2X electromagnetic compatibility. C-ITS is suitable for safety service applications due to its low latency, and legacy LTE is suitable for applications such as traffic information and infotainment due to its high latency and high capacity. In order to evaluate the V2X communication system, the evaluation equipment must have communication performance of the same level or higher. The main design contents presented in this paper will be applied to the implementation of a hybrid V2X communication module for electromagnetic compatibility evaluation.

Evaluation of analytical method for polybrominated diphenyl ethers (PBDEs) in manufactured products waste (제품폐기물 중 폴리브롬화에테르류 (PBDEs) 분석방법 비교 연구)

  • Shin, Sun Kyoung;Kim, Hyoung Seop;Jeon, Tae Wan;Kim, Tae Seung;Kim, Jong Ha;Lee, Jeong Ah
    • Analytical Science and Technology
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    • v.20 no.2
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    • pp.109-114
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    • 2007
  • In this study, soxhlet extraction and dissolution-precipitation method are used for separating analyte from polymer materials. In soxhlet extraction efficiency test, it has been found that the DCM, Toluene, THF, and mixtures Acetone/Hexane (1:4, v/v) gave good extraction efficiency, while the use of the ethyl ether, acetone/ethyl ether (1:4, v/v), acetone/hexane (1:1, v/v), DCM/hexane (1:1, v/v) resulted in significantly lower values. In case of dissolution-precipitation method, there is no considerable difference with used different dissolving solvent. The elution amount of multi layer silica and Florisil column were determined with hexane 250 mL and 70 mL of hexane, respectively. Range of PBDE in real waste plastics was N.D.~1,028 ppm.