• Title/Summary/Keyword: V2X technology

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Research on Relay Selection Technology Based on Regular Hexagon Region Segmentation in C-V2X

  • Li, Zhigang;Yue, Xinan;Wang, Xin;Li, Baozhu;Huang, Daoying
    • KSII Transactions on Internet and Information Systems (TIIS)
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    • v.16 no.9
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    • pp.3138-3151
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    • 2022
  • Traffic safety and congestion are becoming more and more serious, especially the frequent occurrence of traffic accidents, which have caused great casualties and economic losses. Cellular Vehicle to Everything (C-V2X) can assist in safe driving and improve traffic efficiency through real-time information sharing and communication between vehicles. All vehicles communicate directly with Base Stations (BS), which will increase the base station load. And when the communicating vehicles are too far apart, too fast or there are obstacles in the communication path, the communication link can be unstable or even interrupted. Therefore, choosing an effective and reliable multi-hop relay-assisted Vehicle to Vehicle (V2V) communication can not only reduce the base station load and improve the system throughput but also expand the base station coverage and improve the communication quality of edge vehicles. Therefore, a communication area division scheme based on regular hexagon segmentation technology is proposed, a relay-assisted V2V communication mechanism is designed for the divided communication areas, and an efficient communication link is constructed by selecting the best relay node. Simulation results show that the scheme can improve the throughput of the system by nearly 55% and enhance the robustness of the V2V communication link.

Hash Tree based Communication Protocol in V2X Environments Including Internet of Vehicles for Providing Secure Vehicular Communication Services (차량인터넷을 포함한 V2X 환경에서 안전한 차량 통신 서비스 제공을 위한 해시 트리 기반 통신 프로토콜)

  • Jin, Byungwook;Cha, Siho
    • Journal of Korea Society of Digital Industry and Information Management
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    • v.14 no.1
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    • pp.27-34
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    • 2018
  • Various messages generated in vehicles are transmitted based on the wireless telecommunication which is a core technology of vehicle to everything (V2X). However, the hackers attack them upon penetration to the system and network to cause the generation of users' inconveniences for vehicular communication. Moreover, huge damage could be occurred in terms of physical and materialistic areas if the users in the vehicles were attacked in the communication environment. Therefore, this study was to design the safe communication protocol using hash tree technique in the V2X environments. Using hash tree technique, processes of issuing certificate and registration and communication protocol were designed, and safety analysis was performed on the attacking technique which is occurred in the existing vehicles. Approximately 62% of decrease in the capacity analysis was found upon comparative analysis of telecommunication processes with the system to issue the certificate which is used in the existing vehicles.

Characteristics of Low Temperature SiNx Films Deposited by Using Highly Diluted Silane in Nitrogen (고희석 SiH4 가스를 이용하여 증착한 저온 PECVD 실리콘 질화물 박막의 기계적, 전기적 특성연구)

  • No, Kil-Sun;Keum, Ki-Su;Hong, Wan-Shick
    • Korean Journal of Metals and Materials
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    • v.50 no.8
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    • pp.613-618
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    • 2012
  • We report on electrical and mechanical properties of silicon nitride ($SiN_x$) films deposited by a plasma enhanced chemical vapor deposition (PECVD) method at $200^{\circ}C$ from $SiH_4$ highly diluted in $N_2$. The films were also prepared from $SiH_4$ diluted in He for comparison. The $N_2$ dilution was also effective in improving adhesion of the $SiN_x$ films, fascilitating construction of thin film transistors (TFTs). Metal-insulator-semiconductor (MIS) and Metal-insulator-Metal (MIM) structures were used for capacitance-voltage (C-V) and current-voltage (I-V) measurements, respectively. The resistivity and breakdown field strength of the $SiN_x$ films from $N_2$-diluted $SiH_4$ were estimated to be $1{\times}10^{13}{\Omega}{\cdot}cm$, 7.4 MV/cm, respectively. The MIS device showed a hysteresis window and a flat band voltage shift of 3 V and 0.5 V, respectively. The TFTs fabricated by using these films showed a field-effect mobility of $0.16cm^2/Vs$, a threshold voltage of 3 V, a subthreshold slope of 1.2 V/dec, and an on/off ratio of > $10^6$.

Performance Analysis of New LMMSE Channel Interpolation Scheme Based on the LTE Sidelink System in V2V Environments (V2V 환경에서 LTE 기반 사이드링크 시스템의 새로운 LMMSE 채널 보간 기법에 대한 성능 분석)

  • Chu, Myeonghun;Moon, Sangmi;Kwon, Soonho;Lee, Jihye;Bae, Sara;Kim, Hanjong;Kim, Cheolsung;Kim, Daejin;Hwang, Intae
    • Journal of the Institute of Electronics and Information Engineers
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    • v.53 no.10
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    • pp.15-23
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    • 2016
  • To support the telematics and infotainment services, vehicle-to-everything (V2X) communication requires a robust and reliable network. To do this, the 3rd Generation Partnership Project (3GPP) has recently developed V2X communication. For reliable communication, accurate channel estimation should be done. However, because vehicle speed is very fast, radio channel is rapidly changed with time. Therefore, it is difficult to accurately estimate the channel. In this paper, we propose the new linear minimum mean square error (LMMSE) channel interpolation scheme based on the Long Term Evolution (LTE) sidelink system in vehicle-to-vehicle (V2V) environments. In our proposed reduced decision error (RDE) channel estimation scheme, LMMSE channel estimation is applied in the pilot symbol, and then in the data symbol, smoothing and LMMSE channel interpolation scheme is applied. After that, time and frequency domain averaging are applied to obtain the whole channel frequency response. In addition, the LMMSE equalizer of the receiver side can reduce the error propagation due to the decision error. Therefore, it is possible to detect the reliable data. Analysis and simulation results demonstrate that the proposed scheme outperforms currently conventional schemes in normalized mean square error (NMSE) and bit error rate (BER).

Measurements of proton beam flux and energy of APEP using foil activation technique

  • Wenlin Li;Qifan Dong;Hantao Jing;Li Ou;Zhixin Tan;Sixuan Zhuang;Qingbiao Wu
    • Nuclear Engineering and Technology
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    • v.56 no.1
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    • pp.328-334
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    • 2024
  • The activation method of metallic foils is an important technique to measure the flux and energy of proton beams. In this paper, the method was used to measure the CSNS APEP proton flux at seven nominal proton energies ranging from 10 MeV to 70 MeV for beam spot sizes of the 20 mm × 20 mm and 50 mm × 50 mm. The reactions of natTi(p, x)48V, natNi(p, x)57Ni, natCu(p, x)58Co, and 27Al(p, x)24Na were employed to measure the proton beam flux with a range of 107-109 p/cm2/s. Furthermore, we also proposed a method using the activity ratio with a stacked-foil target to determine the energy spread of a Gaussian-like distribution for different nominal proton energies. The optimal combinations of Al, Cu, Ti, Ni, Mo, Fe, Nb, and In foils were adopted for the proton energies. The measured energy spreads for degraded beams of 30 MeV-70 MeV were found to be smaller than 10.00%.

방사광 가속기의 광전자 분광법을 이용한 전면 발광 유기발광 다이오드에서의 열중착 산화구리와 유기물 사이의 계면 dipole 에너지 및 정공 주입 효율에 대한 연구

  • Kim, Seong-Jun;Hong, Gi-Hyeon;Kim, Gi-Su;Lee, Il-Hwan;Lee, Jong-Ram
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2010.03a
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    • pp.8-10
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    • 2010
  • We report the enhancement of hole injection using thermally evaporated $CuO_x$ layer between Ag anode and 4,4'-Bis[N-(1-naphthyl)-N-phenylamino]biphenyl ($\alpha$-NPD) in top-emitting organic light-emitting diode (TEOLED). The operation voltage at the current density of $1mA/cm^2$ of TEOLEDs decreased from 6.2 V to 5.0 V as the $CuO_x$ layer inserted between Ag and $\alpha$-NPD. $\alpha$-NPD was deposited in situ on Ag/$CuO_x$ and Ag anodes, and their interface dipole energies were quantitatively determined using synchrotron radiation photoemission spectroscopy. The dipole energy of Ag/$CuO_x$ was lower by 0.05 eV even though Ag/$CuO_x$ had a higher work function. The work function of Ag/$CuO_x$ is higher by 0.53 eV than that of Ag, resulting in a decrease of the turn-on voltage via reduction of hole injection barrier.

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Application of Flory-Treszczanowicz-Benson model and Prigogine-Flory-Patterson theory to Excess Molar Volume of Binary Mixtures of Ethanol with Diisopropyl Ether, Cyclohexane and Alkanes (C6-C9)

  • Kashyap, Pinki;Rani, Manju;Tiwari, Dinesh Pratap;Park, So-Jin
    • Korean Chemical Engineering Research
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    • v.58 no.2
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    • pp.257-265
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    • 2020
  • Densities (ρ) for binary mixtures of ethanol (1) + diisopropyl ether (DIPE) or cyclohexane or alkane (C6-C9) (2) were measured at 298.15 K, 308.15 K and 318.15 K. The excess molar volume (VEm) of binary mixtures was calculated using ρ data and correlated with Redlich-Kister polynomial equation. The VEm values for binary mixtures of ethanol (1) + cyclohexane or n-alkane (C6-C9) (2) were positive, whereas for ethanol (1) + DIPE (2) these were negative. The magnitude of VEm values follows the order: cyclohexane > n-nonane > n-octane > n-heptane > n-hexane > DIPE. The VEm values have been interpreted qualitatively and also quantitatively in terms of Flory-Treszczanowicz-Benson (FTB) model and Prigogine-Flory-Patterson (PFP) theory. The values VEm predicted using FTB model agree well with experimental VEm values at all mole fractions. But the PFP theory describes well VEm data in ethanol-rich region (x1 > 0.5) for all binary mixtures and is able to predict the sign of VEm vs x1 curve for ethanol-lean region (x1 < 0.5) except for ethanol (1) + nonane (2) mixtures.

Measurement of Apron Shielding Rate for X-ray and Gamma-ray (X선 및 감마선에 대한 apron의 차폐율 측정)

  • Park, Myeong-Hwan;Kwon, Deok-Moon
    • Journal of radiological science and technology
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    • v.30 no.3
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    • pp.245-250
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    • 2007
  • This research measured the shielding rates of apron 0.25 and 0.5 mmPb for X-ray energy in diagnosis radiation system and gamma-ray energy of $^{99m}Tc$-MDP and $^{18}F$-FDG. X-ray energies were measured on effective energy of $26.2{\sim}45.6\;keV$ when additional filtering plate of 0, 2 mmAl is used within the range of tube voltage $40{\sim}120\;kVp$, and at this time, apron 0.5 mmPb has shown about 5.5% of increase in its shielding rate over 0.25 mmPb at the highest quality. Besides, the aprons of the two types have shown high shielding rate of over 90% for direct X-ray and spatial dose rate. And, in case 0.25 and 0.5 mmPb aprons were used at 140keV of $^{99m}Tc$-MDP, the shielding effects were between 30 and 53%, and at high energy of 511 keV, $^{18}F$-FDG, the shielding effects of apron, $1.3{\sim}3.6%$, were very small.

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X-Ray Absorption Spectroscopic Study of 120 MeV $Ag^{9+}$ Ion-Irradiated N-Doped ZnO Thin Films

  • Gautam, Sanjeev;Lim, Weon Cheol;Kang, Hee Kyung;Lee, Ki Soo;Song, Jaebong;Song, Jonghan;Asokan, K.;Chae, Keun Hwa
    • Proceedings of the Korean Vacuum Society Conference
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    • 2013.02a
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    • pp.315-315
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    • 2013
  • We report the electronic structure modification in the swift heavy ion (SHI) irradiated N-doped ZnO thin films prepared by RF sputtering from ZnO target in different ratio of Ar/$N_2$ gas mixture using highly pure $N_2$ gas. The different N-ZnO thin lms were then irradiated with 120 MeV Ag ion beam with different doses ranging from $1{\times}10^{11}$ to $5{\times}10^{12}$ ions/$cm^2$ and characterized by XRD and near edge X-ray absorption ne structure (NEXAFS) at N and O K-edges. The NEXAFS measurements provide direct evidence of O 2p and Zn 3d orbital hybridization and also the bonding of N ions with Zn and O ions. The minimum value of resistivity of $790{\Omega}cm$, a Hall mobility of $22cm^2V^-1s^-1$ and the carrier concentration of $3.6{\times}10^{14}cm^{-3}$ were yielded at 75% $N_2$. X-ray diffraction (XRD) measurements revealed that N-doped ZnO films had the preferential orientation of (002) plane for all samples, while crystallinity start decreasing at 32.5% $N_2$. The average crystallite size varies from 5.7 to 8.2 nm for 75% and then decreases to 7.8 nm for 80% $Ar:N_2$ ratio.

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