• Title/Summary/Keyword: V2C

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Characteristics of Vibrio mimicus K-1 Isolated from Coastal Sea Water (연안 해수에서 분리된 Vibrio mimicus K-1의 특성)

  • KOH Byeong-Ho;LEE Won-Jae;LEE Myung-Suk
    • Korean Journal of Fisheries and Aquatic Sciences
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    • v.27 no.3
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    • pp.292-298
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    • 1994
  • An environmental study was done to examine the distribution of Vibrio mimicus in aquatic environments of Kwangan and Minrak beach, Pusan, Korea. Moreover, both bacteriological characteristics and lethal effects of isolated V. mimicus were observed. Sea water samples were collected monthly from January to September, 1993, and quantitatively analyzed for V. mimicus. This organism was isolated from April(water temperature was $16.3^{\circ}C$), whereas it was not isolated when the water temperature fell below $15^{\circ}C$. V. mimicus counts were not remarkably high, however this study at least describes the distribution and occurrence of the possible highest density in aquatic environments of this region. Among the confirmed V. mimicus strains, the author chose the strongest antibiotic resistant bacterium and named it V. mimicus K-1. This strain has antibiotic resistance to colistin, erythromycin, tetracycline, and penicillin, and most isolates had a higher level of antibiotic resistance than V. mimicus ATCC 33653. The optimum growth for V. mimicus K-1 was observed at $37^{\circ}C$, pH 7.5, and $1\%$ NaCl, respectively. This organism was mostly inactivated by Ultra Violet irradiation (30W, $50^{\circ}C$) for 70 seconds and death lethality increased in proportion to treatment temperature ($D_{50}=5.7min,\;D_{60}=\;2.1min,\;and\;D_{70}=0.7min$).

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Passivation property of Al2O3 thin film for the application of n-type crystalline Si solar cells (N-type 결정질 실리콘 태양전지 응용을 위한 Al2O3 박막의 패시베이션 특성 연구)

  • Jeong, Myung-Il;Choi, Chel-Jong
    • Journal of the Korean Crystal Growth and Crystal Technology
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    • v.24 no.3
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    • pp.106-110
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    • 2014
  • The passivation property of $Al_2O_3$ thin film formed using atomic layer deposition (ALD) for the application of crystalline Si solar cells was investigated using microwave photoconductance decay (${\mu}$-PCD). After post-annealing at $400^{\circ}C$ for 5 min, $Al_2O_3$ thin film exhibited the structural stability having amorphous nature without the interfacial reaction between $Al_2O_3$ and Si. The post-annealing at $400^{\circ}C$ for 5 min led to an increase in the relative effective lifetime of $Al_2O_3$ thin film. This could be associated with the field effective passivation combined with surface passivation of textured Si. The capacitance-voltage (C-V) characteristics of the metal-oxide-semiconductor (MOS) with $Al_2O_3$ thin film post-annealed at $400^{\circ}C$ for 5 min was carried out to evaluate the negative fixed charge of $Al_2O_3$ thin film. From the relationship between flatband voltage ($V_{FB}$) and equivalent oxide thickness (EOT), which were extracted from C-V characteristics, the negative fixed charge of $Al_2O_3$ thin film was calculated to be $2.5{\times}10^{12}cm^{-2}$, of which value was applicable to the passivation layer of n-type crystalline Si solar cells.

Optical Properties of $Bi_2S_3$ Thin films ($Bi_2S_3$ 薄膜의 光學的 特性)

  • Wee, Sung-Dong
    • Journal of the Korean Institute of Telematics and Electronics
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    • v.26 no.4
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    • pp.62-66
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    • 1989
  • $Bi_2S_3$ polycrystalline and $Bi_2S_3$ amorphous thin tilm were grown by the evaporation method. The measured lattic parameters were $a=1.708{\AA},\;b=0.351{\AA},\;and\;C=3.943{\AA}$ at substrate temperature $210^{cric}C$ were shown to have the orthorhombic structure. The energy gape of $Bi_2S_3$ polycrystalline that was made from thin film were measured to be 1.375eV at $289^{cric}K.$ The optical band gap of $Bi_2S_3$ amorphous thin film was measured to be 1.71eV at $289^{cric}K.$ It was supposed to mechanism that a photon absorption was changed at the center of 674nm (1.84eV)

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I-V and C-V measurements or fabricated P+/N junction mode in Antimony doped (111) Silicon

  • Jung, Won-Chae
    • Transactions on Electrical and Electronic Materials
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    • v.3 no.2
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    • pp.10-15
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    • 2002
  • In this paper, the electrical characteristics of fabricated p+-n junction diode are demonstrated and interpreted with different theoretical calculations. Dopants distribution by boron ion implantation on silicon wafer were simulated with TRIM-code and ICECaEM simulator. In order to make electrical activation of implanted carriers, thermal annealing treatments are carried out by RTP method for 1min. at $1000^{circ}C$ under inert $N_2$ gas condition. In this case, profiles of dopants distribution before and after heat treatments in the substrate are observed from computer simulations. In the I-V characteristics of fabricated diodes, an analytical description method of a new triangular junction model is demonstrated and the results with calculated triangular junction are compared with measured data and theoretical calculated results of abrupt junction. Forward voltage drop with new triangular junction model is lower than the case of abrupt junction model. In the C-V characteristics of diode, the calculated data are compared with the measured data. Another I-V characteristics of diodes are measured after proton implantation in electrical isolation method instead of conventional etching method. From the measured data, the turn-on characteristics after proton implantation is more improved than before proton implantation. Also the C-V characteristics of diode are compared with the measured data before proton implantation. From the results of measured data, reasonable deviations are showed. But the C-V characteristics of diode after proton implantation are deviated greatly from the calculated data because of leakage currents in defect regions and layer shift of depletion by proton implantation.

Consolidation Characteristics of Repeated Loading for Highly Organic Soils (고유기질토의 반복압밀특성)

  • 김재영;주재우;박성희
    • Journal of the Korean Geotechnical Society
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    • v.17 no.2
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    • pp.5-12
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    • 2001
  • 고유기질토의 정규압밀과 과입밀에 대한 압밀특성을 연구하기 위하여 전북지역에서 채취한 2종류의 고유기질토 IS와 YJ를 사용하여 일련의 실내 표준압밀시험과 반복압밀시험을 수행하였다. 전북지역 대표적인 고유기질토의 물리적 특성은 유기물함량이 각각 58%와 72%, 자연함수비 487%와 635%, 초기공극비 7.02와 9.72이었다. 표준압밀시험결과 K, $M_{v}$ , $C_{v}$ 는 압밀하중이 증가함에 따라서 선행하중을 경계로 일반 점토보다 크게 감소하는 특성을 보였다. 또한 2단계, 3단계 반복압밀 시험결과 K, $M_{v}$ 는 압밀하중이 증가함에 따라서 완만하게 감소하였으며 표준압밀시험결과보다는 작게 나타났다. 2단계 반복압밀의 경우 $C_{v}$ 는 정규압밀영역에서 표준압밀시험결과보다 약 10-12배정도 크게 나타났다. $C_{c}$ , $C_{a}$ 는 압밀하중이 증가함에 따라서 각각 선행하중의 약 2.5배, 3배 하중을 정점으로 크게 증감하는 고유기질토 고유의 특성을 나타냈다. 고유기질토의 $C_{c}$ , $C_{a}$ 는 일반 점토보다 압밀압력 의존성이 큰 특성을 나타냈으며 최대값도 각각 2.9-3.8, 0.3-0.4로 일반 점토보다 큰 값을 보였다. 2단계, 3단계 반복압밀시험결과 $C_{c}$ , $C_{a}$ 는 압밀하중이 증가함에 따라서 약간 증가하였다. $C_{a}$ 는 OCR이 증가함에 따라서 감소하였으며 특히 OCR이 1-2 범위에서 감소폭이 크게 나타났다. 고유길토의 제압밀계수는 반복회수 및 하중의 크기 등에 따라서 큰 영향을 받으며 또한 과압밀 크기의 대소는 고유기질토의 $C_{a}$ 에 큰 영향을 미치는 것으로 생각되어 이 분야에 대한 더 많은 연구가 필요하다.

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The Fabrication of Packaged 4H-SiC 2kV power PiN diode and Its Electrical Characterization (탄화규소 (4H-SiC) 기반 패키지 된 2kV PiN 파워 다이오드 제작과 전기적 특성 분석)

  • Song, Jae-Yeol;Kang, In-Ho;Bahng, Wook;Joo, Sung-Jae;Kim, Sang-Cheol;Kim, Nam-Kyun;Lee, Yong-Jae
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2008.06a
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    • pp.67-68
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    • 2008
  • In this study we have developed a packaged silicon carbide power diode with blocking voltage of 2kV. PiN diodes with 7 field limiting rings (FLRs) as an edge termination were fabricated on a 4H-SiC wafer with $30{\mu}m$-thick n-epilayer with donor concentration of $1.6\times10^{15}cm^{-3}$. From packaged PiN diode testing, we obtained reverse blocking voltage of 2kV, forward voltage drop of 4.35V at 100A/$cm^2$, on-resistance of $6.6m{\Omega}cm^2$, and about 8 nanosec reverse recovery time. These properties give a potential for the power system application.

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Extraction of Glycosaminoglycans from Styela clava Tunic (미더덕 껍질로부터 Glycosaminoglycans의 추출)

  • 안삼환;정성훈;강석중;정태성;최병대
    • KSBB Journal
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    • v.18 no.3
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    • pp.180-185
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    • 2003
  • Glycosaminoglycans (GAGS was extracted from sea squirt, Styela clava with sodium phosphate at 105$^{\circ}C$ for 2 hr and deproteinized with trichloroacetic acid or hydrochloride. The GAGs obtained from tunic consist 41.7% crude carbohydrates, 31.8% crude protein, and 31.2% sulfate. It was mainly constituted of galactose, glucosamine, glucose, mannose, and glacrosamine. The prominent amino acid were phenylalanine, threonine, glutamic acid, and aspartic acid. Mineral contents was mainly constituted 3.0 mg% sodium, 1.6 mg% potassium, and 1.2 mg% phosphorus. Trichloroacetic acid, hydrochloride and 5-sulfosalicylic acid were used for deprotein of the GAGs. Effective volume for deprotein of crude GAGs were 5.0% trichloroacetic acid (w/v) and 10.0% HCI (v/v) treatment. The deproteinized GAGs contained 35.1%, 35.4% of protein and 22.0%, 18.5% of sulfate, respectively.

A Study on the Phase Transition of Heat-Treated CdS Thin Films (열처리한 CdS 박막의 구조변환에 관한 연구)

  • Kim, Geun-Muk;Han, Eun-Ju
    • Korean Journal of Materials Research
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    • v.9 no.8
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    • pp.782-786
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    • 1999
  • CdS thin films prepared by vaccum evaperation have been studied the characteristcs of room temperature of scanning electron microscoe(SEM), X-ray diffraction(XRD), energy dispersive X-ray(EDX), and photoluminescence(PL)spectra. The cubic to hexagonal structure phase transitin has been determined to be $350^{\circ}C~450^{\circ}C$. The results of compensated donor levels of $O_2$and Si impurites at S-vacancy were identified CdO and $Cd_2SiO_4$defects. The edge emission peaks measured by PL of room temperature was donor level accoding the theses $O_2$and Si impurites were due to 2.43eV($350^{\circ}C$) and 2.42eV(55$0^{\circ}C$) peak energies respectively. The structure transition annealing temperature was measured $370^{\circ}C$ similar to Ariza-Calderons result, $374^{\circ}C$ by CBD films.

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Carbide Precipitation Behavior During Normalizing Heat Treatment in Low-alloyed Cr-Mo-V-Ti Steel (Cr-Mo-V-Ti 저합금강에서 노멀라이징 열처리조건에 따른 석출물의 거동)

  • Kim, Hong-Ki;Na, Hye-Sung;Lee, Sang-Hoon;Kang, Chung-Yun
    • Journal of the Korean Society for Heat Treatment
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    • v.30 no.2
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    • pp.43-52
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    • 2017
  • Heat treatment condition for dissolution of the M23C6 carbides in 2.25Cr-1Mo-V-Ti material for thermal power plant tube was investigated using a dilatometer method. 2.25Cr-1Mo-V-Ti material was heat-treated at $900{\sim}1,100^{\circ}C$ for 0, 10, 30 min to find the proper dissolution condition of M23C6 carbides. The phase identification and volume fraction of the carbide were measured by using OM, SEM, EBSD and TEM analysis. Optimal heat treatment condition of M23C6 carbide dissolution was selected by predicting dissolution temperature of carbide using Bs points appeared at dilatometer curve. Experimental results showed that the conditions of carbide dissolution was 900, 1,000, $1,100^{\circ}C$ for 30 min. Eventually, the optimal heat treatment condition for dissolution was 30 min at $1,000^{\circ}C$ considering the minimum coarsening of Austenite grain size.

Optical Preperties of HgS and HgS : Co Crystals and Films (HgS 및 HgS : Co 결정과 박막의 광학적 특성)

  • 박복남;방태환;김종룡;장우선;최성휴
    • Journal of the Korean Vacuum Society
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    • v.5 no.3
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    • pp.213-217
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    • 1996
  • HgS and HgS: Co crystals and films grown by the slow cooling and the chemical bath deposition method were used to measure their crystal structure and their optical absorption spectra. HgS and HgS: Co crystals are hexagonal structure with the lattice constant $a_0=4.155{\AA}$, $c_0=9.505{\AA}$ for HgS and $a_0=4.148{\AA}$, $c_0=9.462{\AA}$ for HgS and $a_0=4.135{\AA}$, $c_0=9.442{\AA}$ for HgS: Co, respectively. The optical energy gap of these crystals are given as 2.040 eV for HgS and 1.900 eV for HgS: Co, and the optical energy gap of these films were 2.440 eV for HgS and 1.940 eV for HgS: Co at room temperature, respectively.

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