• Proceedings of the Korean Institute of Information and Commucation Sciences Conference
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• 2013.10a
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• pp.357-360
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• 2013

A 1.8V 2-Gb/s scalable low voltage signaling (SLVS) transmitter (TX) is designed for mobile applications requiring high speed and low power consumption. It consists of 4-lane TX for data transmission, 1-lane TX for a source synchronous clocking, and a 8-phase clock generator. The proposed SLVS TX has the scaling voltage swing from 50 mV to 650 mV and supports a high speed (HS) mode and a low power (LP) mode. An output impedance calibration scheme for the SVLS TX is proposed to improve the signal integrity. The proposed SLVS TX is implemented by using a $0.18-{\mu}m$ 1-poly 6-metal CMOS with a 1.8V supply. The simulated data jitter of the implemented SLVS TX is about 8.04 ps at the data rate of 2-Gbps. The area and power consumption of the 1-lane of the proposed SLVS TX are $422{\times}474{\mu}m^2$ and 5.35 mW/Gb/s, respectively.

• Journal of the Korea Institute of Information and Communication Engineering
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• v.20 no.1
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• pp.110-116
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• 2016

This paper describes 1.2-V 5-Gb/s scalable low voltage signaling(SLVS) differential transmitter(TX) with a digital impedance calibration and equalizer. The proposed transmitter consists of a phase-locked loop(PLL) with 4-phase output clock, a 4-to-1 serializer, a regulator, an output driver, and an equalizer driver for improvement of the signal integrity. A pseudo random bit sequence generator is implemented for a built-in self-test. The proposed SLVS transmitter provides the output differential swing level from 80mV to 500mV. The proposed SLVS transmitter is implemented by using a 65-nm CMOS with a 1.2-V supply. The measured peak-to-peak time jitter of the implemented SLVS TX is about 46.67 ps at the data rate of 5Gb/s. Its power consumption is 1.88 mW/Gb/s.

• Journal of the Korean Vacuum Society
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• v.5 no.3
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• pp.213-217
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• 1996

HgS and HgS: Co crystals and films grown by the slow cooling and the chemical bath deposition method were used to measure their crystal structure and their optical absorption spectra. HgS and HgS: Co crystals are hexagonal structure with the lattice constant $a_0=4.155{\AA}$, $c_0=9.505{\AA}$ for HgS and $a_0=4.148{\AA}$, $c_0=9.462{\AA}$ for HgS and $a_0=4.135{\AA}$, $c_0=9.442{\AA}$ for HgS: Co, respectively. The optical energy gap of these crystals are given as 2.040 eV for HgS and 1.900 eV for HgS: Co, and the optical energy gap of these films were 2.440 eV for HgS and 1.940 eV for HgS: Co at room temperature, respectively.

• Journal of the Korean Institute of Telematics and Electronics D
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• v.35D no.6
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• pp.21-27
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• 1998

Electrical and optical characteristics of ZnS:Mn/ZnS:Tb multilayer TFEL devices were investigated for multi-color electroluminescent display applications. Emission spectra of M $n^{2+}$ and T $b^{3+}$ ions were observed from ZnS:Mn/ZnS:Tb multi-layer TFEL devices, and were very broad from 540 nm to 640 nm. Saturation luminance measured at 155 V was 1025 Cd/$m^2$. C-V, $Q_{t}$ - $V_{p}$ curves showed that the phosphor capacitance ( $C_{p}$ ) and the insulator capacitance ( $C_{i}$ ) were 13.5nF/$\textrm{cm}^2$ and 60 nF/$\textrm{cm}^2$, respectively. Threshold voltage( $V_{thl}$) was shown to decrease from 126 V to 93 V due to the increase of the applied voltage from 155 V to 185 V, which was attributed to the increase of the polarization charge. The equation for the calculation of the threshold voltage as a function of the applied voltage was proposed for the first time. The calculated threshold voltage agreed well with the data obtained from the measurement.t.t.t.

• Proceedings of the KIEE Conference
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• 1995.07b
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• pp.613-615
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• 1995

KEPCO is now going on upgrading the highest system voltage from 345kV to 765kV since 1992. The main reason of this 765kV project is the bulk power transmission from the power generation sites at the East and West coasts to the Kyeong-in area. The first 765kV transmission lines will be constructed by 1998 and operated as 345kV level until 2001. This system needs a detailed evaluation of the 2nd arc in case of 765kV transmission line outages and the countermeasures for the fast arc reduction for the successful high speed reclosing. So, this paper deals with the simulation results of the 2nd arc characteristics using EMTP and comparison of Sh.R and HSGS for the reduction methods.

• 전자공학회논문지 IE
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• v.48 no.4
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• pp.13-18
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• 2011

In this paper, we have examined electrical characteristics of LDO regulator according to the process variation using a 1 ${\mu}m$ 20 V high voltage CMOS process. The electrical analysis of LDO regulator have been performed with three kind of SPICE parameter sets (Typ : typical, FF : fast, SS : slow) by process variation which cause change of SPICE parameter such as threshold voltage and effective channel length of MOS devices. From simulation results, we confirmed that in case of SS type SPICE parameter set, the LDO regulator has 3.6 mV/V line regulation, 0.4 mV/mA load regulation and 0.86 ${\mu}s$ output voltage settling time. And in case of Typ type SPICE parameter set, the LDO regulatorhas 4.2 mV/V line regulation, 0.44 mV/mA load regulation and 0.62 ${\mu}s$ output voltage settling time. Finally, in the FF type SPICE parameter set, the LDO regulator has 7.0 mV/V line regulation, 0.56 mV/mA load regulation and 0.27 ${\mu}s$ output voltage settling time.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2004.05c
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• pp.47-52
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• 2004

$HgGa_2S_4$ single crystals were grown by the chemical transport reaction method. The $HgGa_2S_4$ single crystal crystallized into a defect chalcopyrite structure $(I\bar{4})$. The lattice constants of the single crystal were found to be a=5.635 ${\AA}$ and c=10.473 ${\AA}$. The direct and indirect optical energy gaps were found to be 2.84 eV and 2.78 eV, respectively. Photoluminescence peaks of $HgGa_2S_4$ single crystal were observed at 2.37 eV, 2.18 eV, and 1.81 eV. In the single crystal, the donor level of 0.25 eV, the acceptor levels of 0.97 eV and 0.41 eV were obtained by TSC, PICTS, and absorption measurements. The photoluminescence peaks were analyzed to relate to the indirect conduction band, the donor level, and the acceptor levels.

• Nuclear Engineering and Technology
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• v.54 no.8
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• pp.2871-2876
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• 2022

The sensitivity of polymer-based capacitive relative humidity (RH) sensors after irradiation with neutrons, electrons and protons was measured. Degradation consists of the decreasing of the upper RH limit that can be measured. At the same time, low RH-level sensitivity is almost stable. After 30 krad of absorption dose, RH cut off is equal to 85% of max value, after 60 krad-40%. Degradation reduces after annealing which indicates high radiation sensitivity of the internal circuit in comparison to RH-sensing polymer film.

• Journal of Marine Bioscience and Biotechnology
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• v.2 no.4
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• pp.263-266
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• 2007

Vibrio vulnificusis a causative agent of serious diseases in humans resulting from the contact of wound with seawater or consumption of raw seafood. Several studies aimed at detecting V. vulnificus have targeted vvh as a representative virulence toxin gene belonging to the bacterium. In this study, we targeted the rpoS gene, a general stress regulator, to detect V. vulnificus. PCR specificity was identified by amplification of 8 V. vulnificus templates and by the loss of a PCR product with 36 non-V. vulnificus strains. The PCR assay had the 273-bp fragment and the sensitivity of 10 pg DNA from V. vulnificus. SYBR Green I-based real-time PCR assay targeting the rpoS gene showed a melting temperature of approximately $84^{\circ}C$ for V. vulnificus strains. The minimum level of detection by real-time PCR was 2 pg of purified genomic DNA, or $10^3$ V. vulnificus cells from pure cultured broth and $10^3$ cells in 1g of oyster tissue homogenates. These data indicate that real-time PCR is a sensitive, species-specific, and rapid method for detecting this bacterium using the rpoS gene in pure cultures and in infected oyster tissues.

• Journal of the Korean Chemical Society
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• v.17 no.6
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• pp.428-433
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• 1973

The quantitative separations of a mixture containing equal amount of each anion such as Si(IV), As(V), P(V), S(VI), W(VI) and Cr(VI) are carried out by the elution through 20${\times}3.14cm^2$ column of anion exchange resin, Dowex 1${\times}$8. The eluents are a mixture of 0.07 M hydrochloric acid and 0.03 M sodium chloride (pH = 1.30) for Si(IV), As(V) and P(V) species, a mixture of 0.6 M sodium chloride and 0.3 M sodium hydroxide for S(VI), W(VI) and Cr(VI) species, and 0.1 N sodium sulfite (pH = 3.48) for P(V) and As(V) species. The subsidiary anions in a standard mixture such as Si(IV), As(V), S(VI), P(V) and W(VI) are separated together from large amount of Fe(III) by the elution through 30cm${\times}3.14cm^2$ column of the resin, Dowex${\times}$50w${\times}$12, using a mixture of 0.1 M sodium nitrate and 2 percent dimethylsulfoxide aqueous solution as an eluent. Si(IV), As(V), S(VI), P(V) and W(VI) eluted together are separated quantitatively under the same conditions as in the separations of the anion mixture. By the conditions obtained in the separations of the standard mixture, Fe(III) and all of the subsidiary anions in steel are quantitatively separated.