• Nuclear industry
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• v.29 no.7
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• pp.58-60
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• 2009

시험 검사 인증 기술 컨설팅 분야의 세계적인 서비스 기업인 T$\ddot{U}$V S$\ddot{U}$D 그룹의 한국 법인인 T$\ddot{U}$V S$\ddot{U}$D Korea가 최근 원자력 기기 및 시스템 설계 엔지니어링 기업인 (주)GNEC를 인수, 합병하면서 국내 원자력 시장에 성큼 진출하는 한편 우리나라 원자력사업의 해외 시장 진출을 적극적으로 도울 계획을 세우고 있다. 라이너 블록 사장은 GNEC 인수 후 기자회견을 통해 "원자력 기기 및 설계, 교육 및 엔지니어링 서비스 등 관련 기술 지원에 앞장서 국내 에너지 산업의 활성화에 앞장서는 것을 물론 국내 원자력 산업의 해외 진출을 지원하면서 중국, 인도 및 중국 등 아시아 시장에 적극 진출할 것" 이라고 말하고 "원전 관련 기술을 갖고 있는 다른 기업에 대해서도 향후 인수 합병(M&A)에 나설 계획"이라고 밝혔다. T$\ddot{U}$V S$\ddot{U}$D Korea가 GNEC 인수를 마무리한 시점인 지난 10월 19일, 한강이 내려다보이는 여의도 대한생명 63빌딩 12층 T$\ddot{U}$V S$\ddot{U}$D Korea 사장실에서 라이너 블록 사장을 만났다. 인터뷰 자리에는 이번 GNEC 합병에 큰 역할을 한 김두일 T$\ddot{U}$V S$\ddot{U}$D 고문이 배석하여 인터뷰를 도왔다.

• Journal of applied mathematics & informatics
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• v.35 no.5_6
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• pp.565-586
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• 2017

In this paper we continue to investigate the Super Vertex Mean behaviour of all graphs up to order 5 and all regular graphs up to order 7. Let G(V,E) be a graph with p vertices and q edges. Let f be an injection from E to the set {1,2,3,${\cdots}$,p+q} that induces for each vertex v the label defined by the rule $f^v(v)=Round\;\left({\frac{{\Sigma}_{e{\in}E_v}\;f(e)}{d(v)}}\right)$, where $E_v$ denotes the set of edges in G that are incident at the vertex v, such that the set of all edge labels and the induced vertex labels is {1,2,3,${\cdots}$,p+q}. Such an injective function f is called a super vertex mean labeling of a graph G and G is called a Super Vertex Mean Graph.

• The Plant Pathology Journal
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• v.21 no.4
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• pp.361-368
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• 2005

A Korean isolate of Pepper mild mottle virus (PMMoV-Kr) was isolated from a diseased hot pepper plant and its biological and molecular properties were compared to that of PMMoV-J and PMMo V -So The genomic RNA of PMMoV-Kr consists of 6,356 nucleotides. The nucleotide and amino acid sequences identities of four viral proteins and two noncoding regions among PMMoV-Kr, PMMoV-S and PMMoV-J were $96.9\%\;to\;100.0\%\;and\;97.5\%\;to\;98.6\%$, respectively. Full-length cDNA amplicon of PMMoV-Kr was directly amplified by RT-PCR with a set of 5'-end primer anchoring T7 RNA promoter sequence and 3'-end virus-specific primer. Capped transcript RNAs from the full-length cDNA clone were highly infectious and caused characteristic symptoms of wild type PMMoV when mechanically inoculated to systemic host plants such as Nicotiana benthamiana and pepper plants.

• Journal of applied mathematics & informatics
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• v.41 no.3
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• pp.633-645
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• 2023

In this paper, Completely V-Regular on semiring is defined and used to derive new theorems with some of its properties. This paper also illustrates V-Regular algebra and Completely V-Regular Algebra with examples and properties. By extending completely V-Regular to fuzzy, a new concept, fuzzy V-Regular is brought out and fuzzy completely V-Regular algebra is introduced too. It is also developed by defining the ideals of Completely V -Regular Algebra and fuzzy completely V-Regular algebra. Finally, this fuzzy algebra concept is applied in image processing to detect edges. This V-Regular Algebra is novel in the research area.

• Proceedings of the Korean Vacuum Society Conference
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• 2016.02a
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• pp.388-388
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• 2016

Chemical mist deposition (CMD) of poly(3,4-ethylenedioxythiophene):poly(styrene sulfonate) (PEDOT:PSS) was investigated with cavitation frequency f, solvent, flow rate of nitrogen, substrate temperature $T_s$, and substrate dc bias $V_s$ as variables for efficient PEDOT:PSS/crystalline (c-)Si heterojunction solar cells (Fig. 1). The high-speed camera and differential mobility analysis characterizations revealed that average size and flux of PEDOT:PSS mist depend on f, solvent, and $V_s$. The size distribution of mist particles including EG/DI water cosolvent is also shown at three different $V_s$ of 0, 1.5, and 5 kV for a f of 3 MHz (Fig. 2). The size distribution of EG/DI water mist without PEDOT:PSS is also shown at the bottom. A peak maximum shifted from 300-350 to 20-30 nm with a narrow band width of ~150 nm for PEDOT:PSS solution, whose maximum number density increased significantly up to 8000/cc with increasing $V_s$. On the other hand, for EG/water cosolvent mist alone, the peak maximum was observed at a 72.3 nm with a number density of ~700/cc and a band width of ~160 nm and it decreased markedly with increasing $V_s$. These findings were not observed for PEDOT:PSS/EG/DI water mist. In addition, the Mie scattering image of PEDOT:PSS mist under white bias light was not observed at $V_s$ above 5 kV, because the average size of mist became smaller. These results imply that most of solvent is solvated in PEDOT:PSS molecule and/or solvent is vaporized. Thus, higher f and $V_s$ generate preferentially fine mist particle with a narrower band width. Film deposition occurred when $V_s$ was impressed on positive to a c-Si substrate at a Ts of $30-40^{\circ}C$, whereas no deposition of films occurred on negative, implying that negatively charged mist mainly provide the film deposition. The uniform deposition of PEDOT:PSS films occurred on textured c-Si(100) substrate by adjusting $T_s$ and $V_s$. The adhesion of CMD PEDOT:PSS to c-Si enhanced by $V_s$ conspicuously compared to that of spin-coated film. The CMD PEDOT:PSS/c-Si solar cell devices on textured c-Si(100) exhibited a ${\eta}$ of 11.0% with the better uniformity of the solar cell parameters. Furthermore, ${\eta}$ increased to 12.5% with a $J_{sc}$ of $35.6mA/cm^2$, a $V_{oc}$ of 0.53 V, and a FF of 0.67 with an antireflection (AR) coating layer of 20-nm-thick CMD molybdenum oxide $MoO_x$ (n= 2.1) using negatively charged mist of 0.1 wt% 12 Molybdo (VI) phosphoric acid n-Hydrate) $H_3(PMo_{12}O_40){\cdot}nH_2O$ in methanol. CMD. These findings suggest that the CMD with negatively charged mist has a great potential for the uniform deposition of organic and inorganic on textured c-Si substrate by adjusting $T_s$ and $V_s$.

• Journal of Chest Surgery
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• v.15 no.3
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• pp.346-354
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• 1982

A Complete transposition of the great arteries combined with V.S.D, A.S.D, dextrocardia, and P.S is a rare congenital anomaly. The patient was a 10 year-old female whose complaints were frequent URI, exertional dyspnea, and cyanosis at rest since birth. Cheat X-ray films showed Dextrocardia ; situs inversus, moderate cardiomegaly, and Characteristic egg-shape heart shadow. E.K.G, Echocardiography, Cardiac Catheterization, and Angio-Cardiography were performed. Open heart Surgery was done under diagnosis of d-TGA, Dextrocardia, V.S.D, A.S.D, and P.S. At the time of Operation, Dextroeardia, T.G.A, Secndum type A.S.D, A.S.D, and P.S. At the time of Operation, Dextroeardia, T.G.A, Secndum type A.S.D. ($2.0{\times}2.0cm$. in diameter), V.S.D. type II ($1.5cm{\times}1.5cm$ in diameter), and pulmonary valvular stenosis were noted. Mustard operation using pericardial Baffle in the atrium for T.G.A. was perforsned. Teflon patch graft for closure of V.S.D. through tricuspid orifice and pulmonary Valvulotomy through pulmonary arteriotomy were performed. The post-op, low cardiac output Syndrome and dysrhythmicawere developed till Postoperative day #7, so that was controlled by inotropic and antiarrhythmic agents. After that, patient's conditions were Uneventful.

• Transactions of Materials Processing
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• v.24 no.1
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• pp.44-51
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• 2015

The current study seeks to examine the effects of V and C additions on the mechanical and low thermal expansion properties of a high strength invar base alloy. The base alloy (Fe-36%Ni-0.9%Co-2.75%Mo-0.7Cr-0.23Mn-0.17Si-0.3%C, wt.%) contains $Mo_2C$ carbides, which form as the main precipitate. In contrast, alloys with additions of 0.4%V+0.3%C (alloy A) or 0.4%V+0.45%C (alloy B) contain $Mo_2C$+[V, Mo]C carbides. The average thermal expansion coefficients of these high strength invar based alloys were measured in the range of $5.16{\sim}5.43{\mu}m/m{\cdot}^{\circ}C$ for temperatures of $15{\sim}230^{\circ}C$. Moreover, alloy B showed lower thermal expansion coefficient than the other alloys in this temperature range. For the mechanical properties, the [V, Mo]C improved hardness and strengths(Y.S. and T.S.) of the high strength invar base alloy. T.S.(tensile strength) and Y.S.(yield strength) of hot forged alloy B specimen were measured at 844.6MPa and 518.0MPa, respectively. The tensile fractography of alloy B exhibited a ductile transgranular fracture mode and voids were initiated between the [V, Mo]C particles and the matrix. Superior properties of high strength and low thermal expansion coefficient can be obtained by [V, Mo]C precipitation in alloy B with the addition of 0.4%V and 0.45%C.

• Journal of the Institute of Electronics and Information Engineers
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• v.53 no.12
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• pp.15-19
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• 2016

The gate bias dependence of kink phenomenon with a large deviation from the resistance circle in Smith chart is observed in the frequency response of $S_{11}$-parameter for large multi-finger RF MOSFETs. For the first time, this bias dependence is analyzed by measuring magnitude and phase of $S_{11}$-parameter, input resistance and input capacitance. As a result, $V_{gs}$ dependent $S_{11}$-parameter is largely changed by the magnitude of input capacitance as well as dominant pole and zero frequencies of input resistance. At $V_{gs}=0V$, the kink phenomenon occurs in the high frequency region because of very small phase difference of $S_{11}$-parameter and high pole frequency of input resistance. However, the kink phenomenon at higher $V_{gs}$ is generated in the low frequency region owing to large phase difference and low pole frequency.

• Electronics and Telecommunications Trends
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• v.36 no.3
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• pp.23-33
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• 2021

Two main technologies of III-V/Si laser diode for optical communication, direct epitaxial growth, and wafer bonding were studied. Until now, the wafer bonding has been vigorously studied and seems promising for the ideal III-V/Si laser. However, the wafer bonding process is still complicated and has a limit of mass production. The development of a concise and innovative integration method for silicon photonics is urgent. In the future, the demand for high-speed data processing and energy saving, as well as ultra-high density integration, will increase. Therefore, the study for the hetero-junction, which is that the III-V compound semiconductor is directly grown on Si semiconductor can overcome the current limitations and may be the goal for the ideal III-V/Si laser diode.

• Journal of the Korea Institute of Information Security & Cryptology
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• v.18 no.1
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• pp.59-65
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• 2008

In security layer in the CDMA2000 1x EV-DO, a standard - C.S0024-a v2.0 is being accomplished under the project of 3GPP2(3rd Generation Partnership Project2). Therefore, a security device is needed to implement the security layer which is defined on the standard document for data transfer security between AT(Access Terminal) and AN(Access Network) on CDMA2000 1x EV-DO environment. This paper realizes the security layer system that can make safe and fast transfer of data between AT and AN. It could be applied to various platform environments by designing and implementing the Security Layer in the CDMA2000 1x EV-DO Security Layer to which applies C.S0024-A v2.0 of 3GPP2.