• Current Optics and Photonics
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• v.6 no.3
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• pp.323-331
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• 2022

Electro-optic modulator (EOM) takes a vital role in connecting the electric and optical fields. Here, we present a heterogeneously integrated EOM based on the lithium niobate-on-insulator (LNOI) platform. The key modulation waveguide structure is a field-enhanced slot waveguide formed by embedding silicon nanowires in a thin-film lithium niobate (LN), which is different from the previously reported LN ridge or etchless LN waveguides. Based on such slot structure, optical mode field area is reduced and enhanced electric field in the slot region can interact well with LN material with high Electro-optic (EO) coefficient. Therefore, the improvements in both aspects have positive effects on enhancing the modulation performance. From results, the corresponding EOM by adding such modulation waveguide structure achieves better performance, where the key half-wave-voltage-length product (V_𝜋L) and 3 dB EO bandwidth are 1.78 V·cm and 40 GHz under the electrode gap width of only 6 ㎛, respectively. Moreover, Lower V_𝜋L can also be achieved. With these characteristics, such field-enhanced waveguide structure could further promote the development of LNOI-based EOM.

• Journal of the Korean Institute of Telematics and Electronics A
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• v.29A no.3
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• pp.87-95
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• 1992

The electrical characteristics of Al/TaS12TOS15T/SiOS12T/Si metal insulator-semiconductor (MIS) capacitors were studied. Tantalum pentoxide thin films on SiOS12T/p-Si substrate have been prepared by thermal oxidation at 450-$600^{\circ}C$ of sputter deposited tantalum films. Composition and structures of the tantalum oxide films were examined by AES and XRD. From the C-V analysis, dielectric constant of TaS12TOS15T which were oxidized at 55$0^{\circ}C$ for 1h in OS12T were 18-23, the value depending on the oxidation and annealing temperature. The leakage current density was found to be about 10S0-10T-10S0-9T A/cmS02T at an applied electric field of 1 MV/cm. The dielectric breakdown strength of the tantalum oxide films annealed at 100$0^{\circ}C$ were in the range from 2.5MV/cm to 2.8 MV/cm.

• Phonetics and Speech Sciences
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• v.7 no.1
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• pp.67-77
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• 2015

The purpose of this study was to investigate how deaf parents influence the speech sounds of their normal-hearing children. Twenty four normal hearing children of deaf adults (CODA) and normal hearing parents (NORMAL) aged 3 to 4 participated in the study. The F1, F2, and the vowel triangle area in 7 vowels and the voice onset times (VOTs) and closure durations in 9 stops were measured. The results of the study are as follows. First, the F1 and F2 for all vowels were higher and the vowel triangle area was larger in CODA than in NORMAL although they were not statistically significant. Second, VOTs in $C_{stop}V$ for $/t^*/$ and in $VC_{stop}V$ for $/t^*/$, $/t^h/$, and $/k^h/$ were longer in CODA than in NORMAL. Most stops in CODA appeared to be longer VOTs for most phonemes. Third, the manner and place of articulation in stops did not make a difference between CODA and NORMAL in VOTs and closed durations. CODA does not demonstrate the speech characteristics of deaf people, however, they seem to speak differently than NORMAL, which means CODA might be influenced by a different linguistic environment created by deaf parents in some way.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2004.11a
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• pp.207-209
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• 2004

Currently, for satisfying the needs of scaled MOSFET's a high quality thin oxide dielectric is desired because the properties of conventional $SiO_2$ film are not acceptable for these very small sized transistors. As an alternative gate dielectric have drawn considerable alternation due to their superior performance and reliability properties over conventional $SiO_2$, to obtain the superior characteristics of ultra thin dielectric films, $N_2O$ grown thin oxynitride has been proposed as a dielectric growtuanneal ambient. In this study the authors observed process characteristics of $N_2O$ grown thin dielectric. In view points of the process characteristics of MOS capacitor, the sheet resistance of 4.07$[\Omega/sq.]$, the film stress of $1.009e^{10}[dyne/cm^2]$, the threshold voltage$(V_t)$ of 0.39[V], the breakdown voltage(BV[V]) of 11.45[V] was measured in PMOS. I could achieve improved electrical characteristics and reliability for deep submicron MOSFET devices with $N_2O$ thin oxide.

• Proceedings of the KIEE Conference
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• 2002.11b
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• pp.80-82
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• 2002

To solve the difficulty in obtaining transmission routes and substation sites. increase the transmission capacity between generation sites and load centers. and enhance the stability of the power system. we have constructed and operated the 765kV double circuit transmission line(hereunder T/L) from the Dangjin thermal power plant and the Uljin nuclear power plant to the metropolitan. It makes it possible for us to accumulate know-how of the 765kV system that is the highest operating system level in Asia. As the second 765kV project, we are going to construct the 765kV single circuit T/L between Ansung and Gap yung. Because of the different electrical and mechanical characteristics. we are in need of different design technology. This paper presents the optimal design of 765kV single circuit transmission line after due consideration about the arrangement of conductors. the shape of a tower, insulation, etc.

• Journal of the Korean Association of Geographic Information Studies
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• v.11 no.2
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• pp.38-50
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• 2008

The site-specific seismic responses and corresponding seismic hazards are influenced mainly by the subsurface geologic and geotechnical dynamic characteristics. To estimate reliably the seismic responses in this study, a geotechnical information system (GTIS) within GIS framework was developed by introducing new concepts, which consist of the extended area containing the study area and the additional site visit for acquiring surface geo-knowledge data. The GIS-based GTIS was built for Gyeongju area, which has records of abundant historical seismic hazards reflecting the high potential of future earthquakes. At the study area, Gyeongju, intensive site investigations and pre-existing geotechnical data collections were performed and the site visits were additionally carried out for assessing geotechnical characteristics and shear wave velocity ($V_S$) representing dynamic property. Within the GTIS for Gyeongju area, the spatially distributed geotechnical layers and $V_S$ in the entire study area were reliably predicted from the site investigation data using the geostatistical kriging method. Based on the spatial geotechnical layers and $V_S$ predicted within the GTIS, a seismic zoning map on site period ($T_G$) from which the site-specific seismic responses according to the site effects can be estimated was created across the study area of Gyeongju. The spatial $T_G$ map at Gyeongju indicated seismic vulnerability of two- to five-storied buildings. In this study, the seismic zonation based on $T_G$ within the GIS-based GTIS was presented as regional efficient strategy for seismic hazard prediction and mitigation.

• Sleep Medicine and Psychophysiology
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• v.16 no.2
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• pp.79-84
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• 2009

Objectives: Chronic pain is one of the most common experiences of humans and a typical psychophysiological disorder. The aim of this study was to measure the psychophysiological responses in chronic pain patients using a biofeedback system, and to compare them with the results from normal healthy subjects. Methods: Forty two patients with chronic pain (17 males and 25 females, average age $44.67{\pm}11.10$ years) and 42 normal healthy controls (17 males and 25 females, average age $45.17{\pm}10.46$ years) participated in this study. Electromyography (EMG), skin conductance (SC), and skin temperature (ST) were recorded using biofeedback system during the 3 phases (baseline, stress, and recovery) of stress reactivity test, and average values of them were calculated. Difference of values between two groups in each corresponding phase was analyzed with independent t-test, and change of values across phases of stress reactivity test was analyzed with paired t-test (all two-tailed, p<0.05). Results: Compared to normal controls, chronic pain patients had higher value of EMG (baseline: $8.10{\pm}5.97{\mu}V$ vs $4.72{\pm}1.52{\mu}V$, t=-3.56, p<0.01; stress: $11.25{\pm}6.89{\mu}V$ vs $8.49{\pm}4.78{\mu}V$, t=-2.13, p<0.05; recovery: $7.12{\pm}3.77{\mu}V$ vs $4.78{\pm}1.59{\mu}V$, t=-3.70, p<0.01) and SC (baseline: $1.06{\pm}1.0{\mu}S$ vs $0.42{\pm}0.29{\mu}S$, t=-4.0. p<0.01; stress: $1.87{\pm}2.05{\mu}S$ vs $1.03{\pm}0.86{\mu}S$, t=-2.47, p<0.05; recovery: $1.74{\pm}1.77{\mu}S$ vs $0.64{\pm}0.59{\mu}S$, t=-3.8, p<0.01) in all the 3 phases. But, skin temperature comparison did not reveal significant differences in all the 3 phases between two groups. Conclusion: Psychophysiological responses of chronic pain patients in stress reactivity test were different from those of normal healthy controls. These results suggest that sympathetic nervous system is more activated in chronic pain patients.

• Journal of the Microelectronics and Packaging Society
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• v.25 no.4
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• pp.67-74
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• 2018

Thermoelectric thin film modules were fabricated by electroplating p-type $Sb_2Te_3$and n-type $Bi_2Te_3$ thin film legs with the same thickness of $20{\mu}m$ and different diameters of $100{\mu}m$, $300{\mu}m$, and $500{\mu}m$, respectively. The output voltage and output power of thin film modules were measured and compared as a function of the leg diameter. The modules processed with thin film legs of $100{\mu}m$, $300{\mu}m$, and $500{\mu}m$-diameter exhibited open circuit voltages of 365 mV at ${\Delta}T=36.7K$, 142 mV at ${\Delta}T=37.5K$, and 53 mV at ${\Delta}T=36.1K$, respectively. Maximum output powers of $845{\mu}W$ at ${\Delta}T=36.7K$, $631{\mu}W$ at ${\Delta}T=37.5K$, and $276{\mu}W$ at ${\Delta}T=36.1K$ were obtained for the modules fabricated with the thin film legs of $100{\mu}m$, $300{\mu}m$, and $500{\mu}m$-diameter, respectively.

• Proceedings of the KIEE Conference
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• 1987.07a
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• pp.461-464
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• 1987

With the fabrication of Al-$Al_2O_3$-n(p) type Si devices, the analysis and measurement of various characteristics, this study presented the electric physical property theory for the charge distribution of MAS device $Al_2O_3$ films, and inquired out the devices available. In order to study them, Al-(450A)$Al_2O_3$-n(p) type Si was the main objects in the study. They were examined through carrier injection, C-V curves of devices on time, ${\Delta}V_{FB}$-t curves, I-V curves and $Al_2O_3$ film's breakdown characteristics.

• Journal of the Korea Institute of Military Science and Technology
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• v.11 no.5
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• pp.34-41
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• 2008

This paper describes the design of SP3T PIN diode switch which has a 500W high power handling capability in $20{\sim}400MHz$ frequency range. Design factors were investigated and it was confirmed by simulation that the characteristics of insertion loss, VSWR, and isolation met design goal. Also, the capability to handle 500W high power with very fast switching speed of less than $26{\mu}s$ was confirmed and insertion loss of less than 1dB, VSWR of less than 1.4:1, and isolation of higher than 60dB were obtained by experiments.