• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2002년도 하계학술대회 논문집
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• pp.439-442
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• 2002

The interface between two different materials in the insulation systems is the weak-link in the underground power transmission systems, In this paper, Optimum conditions of the interface between Epoxy and EPDM is studied. The variation factor condition of interface is roughness of surface, spreading of oils, interfacial pressure and temperature. The breakdown times under the constant voltage below the breakdown voltage were also gained. The breakdown voltage at the after laying time equivalent to is calculated by the V-t characteristic and the inverse power law. When this is done, the characteristic life exponent n is used and the long time breakdown voltage can be evaluated.

• 한국화재소방학회논문지
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• 제23권3호
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• pp.17-22
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• 2009

에폭시 분체도료는 부스닥트, 및 전기기기에 절연재료로 광범위하게 사용되어 진다. 특히 Coating 절연 방식의 경우 전류에 의한 줄 열로 인해 전기화재 및 폭발의 점화 원인이 된다. 본 연구는 에폭시분체도료의 열화특성에 대해 절연파괴, 아크방전, 수명특성(V-t)을 중심으로 비교검토하고 이에 대한 기초데이터 확보 및 전기화재 원인인 절연특성에 대해 연구 하였다. 온도변화에 따른 절연특성은 시편 KS가 유리전이온도(Tg) 이전까지 $8{\sim}10%$ 정도의 감소로 안정적이었다. V-t 및 아크방전특성의 경우, 열화시편에서도 안정적 특성을 유지하였다. 열화에 의한 전기적특성의 경우 시편KS가 우수한 성능을 가지고 있다.

• Transactions on Electrical and Electronic Materials
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• 제7권1호
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• pp.1-6
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• 2006

Hot carrier degradation and roll off characteristics of threshold voltage ($V_{t1}$) on NMOSFETs as I/O transistor are studied as a function of Lightly Doped Drain (LDD) structures. Pocket dose and the combination of Phosphorus (P) and Arsenic (As) dose are applied to control $V_{t1}$ roll off down to the $10\%$ gate length margin. It was seen that the relationship between $V_{t1}$ roll off characteristic and substrate current depends on P dopant dose. For the first time, we found that the n-p-n transistor triggering voltage ($V_{t1}$) depends on drain current, and both $I_{t2}$ and snapback holding voltage ($V_{sp}$) depend on the substrate current by characterization with a transmission line pulse generator. Also it was found that the improved lifetime for hot carrier stress could be obtained by controlling the P dose as loosing the $V_{t1}$ roll off margin. This study suggests that the trade-off characteristic between gate length margin and channel hot carrier (CHC) lifetime in NMOSFETs should be determined by considering Electrostatic Discharge (ESD) characteristic.

• 충청수학회지
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• 제27권4호
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• pp.603-614
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• 2014

We introduce the concepts of ($\mathcal{T}^{{\mu}{\gamma}}$, $\mathcal{U}^{{\mu}{\gamma}}$)-double (r, s) (u, v)-semiclosures and ($\mathcal{T}^{{\mu}{\gamma}}$, $\mathcal{U}^{{\mu}{\gamma}}$)-double (r, s)(u, v)-semiinteriors. Using the notions, we investigate some of characteristic properties of double pairwise (r, s)(u, v)-semicontinuous, double pairwise (r, s)(u, v)-semiopen and double pairwise (r, s)(u, v)-semiclosed mappings.

• BMB Reports
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• 제45권10호
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• pp.554-559
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• 2012

Oligosaccharide modification by N-acetylglucosaminyltransferase-V (GnT-V), a glycosyltransferase encoded by the Mgat5 gene that catalyzes the formation of ${\beta}1$,6GlcNAc (N-acetylglucosamine) branches on N-glycans, is thought to be associated with cancer growth and metastasis. Overexpression of GnT-V in cancer cells enhances the signaling of growth factors such as epidermal growth factor by increasing galectin-3 binding to polylactosamine structures on receptor N-glycans. In contrast, GnT-V deficient mice are born healthy and lack ${\beta}1$,6GlcNAc branches on N-glycans, but develop immunological disorders due to T-cell dysfunction at 12-20 months of age. We have developed Mgat5 transgenic (Tg) mice (GnT-V Tg mice) using a ${\beta}$-actin promoter and found characteristic phenotypes in skin, liver, and T cells in the mice. Although the GnT-V Tg mice do not develop spontaneous cancers in any organs, there are differences in the response to external stimuli between wild-type and GnT-V Tg mice. These changes are similar to those seen in cancer progression but are unexpected in some aspects. In this review, we summarize what is known about GnT-V functions in skin and liver cells as a means to understand the physiological roles of GnT-V in mice.

• 충청수학회지
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• 제30권1호
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• pp.1-13
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• 2017

We introduce the concepts of (${\mathcal{T}}^{{\mu}{\gamma}},{\mathcal{U}}^{{\mu}{\gamma}}$)-double (r, s)(u, v)-preclosures and (${\mathcal{T}}^{{\mu}{\gamma}},{\mathcal{U}}^{{\mu}{\gamma}}$)-double (r, s)(u, v)-preinteriors. Using the notions, we investigate some of characteristic properties of double pairwise (r, s)(u, v)-precontinuous mappings.

• 한국전기전자재료학회논문지
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• 제22권3호
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• pp.210-217
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• 2009

Insulated methods of compact bus duct has been applied a way of coating Epoxy powder. The problem which is caused by degradation during operation is very important in severe environment. Therefore, this study compared and verified many kind of properties ; electrical breakdown by thermal and water aging, v-t characteristic, arc discharge, mechanical properties, bending test and cross cut. Sample D was stable before the $T_g$ to be about $7{\sim}10 %$ decrease in the breakdown test according to temperature change. In case of V-t and arc discharge, it had been kept up suitable characteristic. Also, in case of electrical and mechanical characteristic, both sample D and A have excellent capacity.

• 대한전기학회논문지:전기물성ㆍ응용부문C
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• 제49권8호
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• pp.445-450
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• 2000

Many successful developments and microscopic studies have been made on the high quality insulating materials. However, a little attention have given to the macroscopic interface in HV(High Voltage) insulating systems. In this study, AC interfacial breakdown strength and V-t characteristic of the interface between Epoxy/EPDM(ethylene propylene diene terpolymer) are investigated. Electrode system is designed to reduce the charges from electrodes and to have the tangential potentials along the interface between Epoxy/EPDM by FEM(finite elements method). The AC breakdown strength is observed when HV is given to the interface. It is shown that AC interfacial breakdown strength is improved by increasing interfacial pressure and oiling. In particular, it was saturated at certain interfacial pressure level. V-t characteristic is able to extend to the life time of the interface between Epoxy/EPDM. Oiling also plays a good roll in prolongation of the life time.

• 센서학회지
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• 제6권3호
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• pp.194-199
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• 1997

자기센서가 전압이나 전류의 형태 그대로 출력되는 경우에 발생되는 잡음 유입 및 전압 손실 문제를 개선하기 위하여 소자부는 CMOS공정을 이용하여, 포화영역에서 동작하는 2 drain의 MAGFET을 설계 제작하고, 연산증폭기를 이용한 I-V변환회로, VCO(Voltage Controlled Oscillator)를 만들고 Schmitt trigger에 의한 주파수(Pulse) 변환회로의 시스템부를 하이브릿드 IC로 구성하여 packaging했다. 이 때 자기센서 절대감도는 1.9 V/T, 적감도는 $3.2{\times}10^{4}\;V/A{\cdot}T$ 이었으며 190 kHz/T의 안정된 출력 주파수 특성을 얻을 수 있었다.

• 대한전기학회논문지:전기물성ㆍ응용부문C
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• 제50권9호
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• pp.456-465
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• 2001

In this paper, breakdown voltages in $SF_6-N_2$ mixtures were experimentally investigated to understand characteristics of dielectric strength and physical phenomena in nonuniform field disturbed by a needle shape protrusion. The test voltages are the lightning impulse$(\pm1.2/44 \mus)$ and the damped oscillatory impulse$(\pm400 ns / 0.83 MHz)$ voltages which can be occurred by the operation of disconnecting switches in gas-insulated switchgears(GIS). The effects of the polarity and wave shape of the test voltages, and the gas pressure on the V-t characteristics were in detail examined. The V-t characteristic curves were measured in different two ways : (1) one is the method by taking the maximum voltage recorded at or prior to breakdown against the time to breakdown, that is, the Procedures recommended in IEC 60060-1, (2) the other is the method by taking the voltage at the instant of chopping against the time to breakdown. As a result, the V-t characteristics of $SF_6-N_2$ mixtures in nonuniform electric field were significantly affected by the polarity and wave shape of the applied voltages. The positive breakdown voltages resulted in lower breakdown voltages in the time ranges considered, and the V-t curves for the negative oscillatory impulse voltage were extended over the longer time range. For the lightning impulse voltages, the V-t curves obtained by IEC Pub. 60060-1 were nearly same with the V-t curves obtained by the voltage at the instant of chopping against the time to breakdown. It is clear that the actual breakdown voltages were much lower than the maximum voltages appearing at or prior to breakdown because of the displacement current produced as a result of the dV/dt during the oscillatory transient voltage app1ication. The scattering of the negative actual breakdown voltages was much larger than that of the positive.