• Journal of applied mathematics & informatics
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• 제8권3호
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• pp.909-917
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• 2001

In this paper we define product between fuzzy ${H_v}-ideals$ of given ${H_v}-rings$. we consider the fundamental relation ${\gamma}^*$ defined on and ${H_v}-ring$ and give some properties of the fundamental relations and fundamental rings with respect to the product of fuzzy ${H_v}-ideals$.

• 한국소성가공학회:학술대회논문집
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• 한국소성가공학회 2009년도 추계학술대회 논문집
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• pp.72-75
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• 2009

Design and Manufacturing processes of Ti-6Al-4V profiled ring-products were investigated with three-dimensional FEM simulation and experimental analyses. FEM simulation for the ring-rolling process was used to calculate the state variables such as strain, strain rate and temperature. In the simulation results of strain and temperature distributions for a plane ring rolling process, the strain level at the surface area is higher than that at the mid-plane, but the temperature level at the surface area is lower than that at mid-plane due to heat transfer between the workpiece and the work roll. These distributions showed a great influence on the evolution of microstructure in different positions. In order to induce the uniform deformation of the profile ring and reduce the applied load, the final blank was prepared by two-step processes. The mechanical properties of Ti-6Al-4V alloy ring products made in this work were investigated with tensile and impact tests and analyzed with the evolution of microstructures during the ring rolling process.

• 소성∙가공
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• 제16권3호
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• pp.172-177
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• 2007

The process design for large-scale ring rolling of Ti-6Al-4V alloy was performed by calculation method, processing map approach and FEM simulation. The ring rolling design includes geometry design and optimization of process variables. The calculation method was used to make geometry design such as initial billet and blank sizes, and final rolled ring shape. A commercial FEM code, SHAPE-RR was used to simulate the effect of process variables in ring rolling on the distribution of the internal state variables such as strain, strain rate and temperature. In order to predict the forming defects during ring rolling and the formation of over-heating above $\beta$-transus temperature due to deformation heating, the process-map approach based on Ziegler's instability criterion was used with FEM simulation. Finally, an optimum process design to obtain sound Ti-6Al-4V rings without forming defects was suggested through combined approach of Ziegler's instability map and FEM simulation results.

• Journal of applied mathematics & informatics
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• 제42권2호
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• pp.367-377
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• 2024

Let G = (V, E) be a graph with p-vertices and q-edges and let R^◦ be a finite zero ring of order n. An injective function f : V (G) → {r₁, r₂, _…, r_k}, where r_i ∈ R^◦ is called vertex pair sum k-zero ring labeling, if it is possible to label the vertices x ∈ V with distinct labels from R^◦ such that each edge e = uv is labeled with f(e = uv) = [f(u) + f(v)] (mod n) and the edge labels are distinct. A graph admits such labeling is called vertex pair sum k-zero ring graph. The minimum value of positive integer k for a graph G which admits a vertex pair sum k-zero ring labeling is called the vertex pair sum k-zero ring index denoted by 𝜓_pz(G). In this paper, we defined the vertex pair sum k-zero ring labeling and applied to some graphs.

• 소성∙가공
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• 제16권4호
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• pp.223-228
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• 2007

The profile ring rolling process of Ti-6Al-4V alloy was investigated by finite element(FE) simulation and experimental analysis. The process design of the profile ring rolling includes geometry design and optimization of process variables. The geometry design such as initial billet and blank sizes, and final rolled ring shape was carried out with the calculation method based on the uniform deformation concept between the wall thickness and ring height. FEM simulation was used to calculate the state variables such as strain, strain rate and temperature and to predict the formation of forming defects during ring rolling process. Finally, the mechanical properties of profiled Ti-6Al-4V alloy ring product were analyzed with the evolution of microstructures during the ring rolling process.

• 한국전기전자재료학회논문지
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• 제13권5호
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• pp.371-375
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• 2000

In this paper a new conductivity modulated power transistor called the Lateral Insulated Gated Bipolar Transistor which included n+ ring and p-channel gate is presented. A new lateral IGBT structure is proposed to suppress latch-up and to improve turn off time by imploying n+ ring and p-channel gate and verified by MEDICI. The simulated I-V characteristics at $V_{G}$=15V show that the latch up occurs at $V_{A}$=18V and 6.9$\times$10$^{-5}$ A/${\mu}{\textrm}{m}$ for the proposed LIGBT while the conventional LIGBT latches at $V_{A}$=1.3V and 1.96${\mu}{\textrm}{m}$10$^{-5A}$${\mu}{\textrm}{m}$. It is shown that turn off characteristic of new LIGBT is 8 times than that of conventional LIGBT. And noble LIGBT is not n+ buffer layer because that It includes p channel gate and n+ ring. Therefore Mask for the buffer layer isn’t needed. The concentration of n+ ring is and the numbers of n+ ring and p channel gate are three for the optimal design.n.n.n.n.

• 한국항공우주학회지
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• 제33권8호
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• pp.65-74
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• 2005

공진기 진동형 링레이저 자이로가 외부에서 입력되는 각도변화만을 검출하여 출력하기 위해서는 링레이저 출력으로부터 공진기의 각진동 운동에 의한 출력을 제거하는 방법이 필요하다. 본 논문에서는 공진기 진동형 링레이저 자이로에서 공진기의 각진동을 검출하는 각속도 센서 출력을 V-F 변환하여 링레이저 출력을 보상하는 dither-stripping에 대하여 논의하였다. 우리는 V-F 신호의 offset을 제거하기 위하여 V-F 신호의 미분값을 취하고 또한 미분값을 취함으로서 변화되는 위상을 보상하기 위하여 아날로그 적분기로 위상을 보정하는 방법과 링레이저 신호 또는 V-F 신호의 검출 시점을 지연시키는 방법을 개발하였다. 그리고 링레이저 출력과 V-F 신호 사이의 환산을 위하여 분산을 이용하여 이득을 산출하는 방법을 개발하였다. 우리는 이와 같은 방법을 적용하고, dither trapping 방법과 비교하는 실험을 통하여 효과를 분석하였다.

• 한국전기전자재료학회논문지
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• 제37권2호
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• pp.208-214
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• 2024

This reports the electrical properties of single-crystal β-gallium oxide (β-Ga₂O₃) vertical Schottky barrier diodes (SBDs) with a different guard ring structure. The vertical Schottky barrier diodes (V-SBDs) were fabricated with two types guard ring structures, one is with metal deposited on the Al₂O₃ passivation layer (film guard ring: FGR) and the other is with vias formed in the Al₂O₃ passivation layer to allow the metal to contact the Ga₂O₃ surface (metal guard ring: MGR). The forward current values of FGR and MGR V-SBD are 955 mA and 666 mA at 9 V, respectively, and the specific on-resistance (R_on,sp) is 5.9 mΩ·cm² and 29 mΩ·cm². The series resistance (R_s) in the nonlinear section extracted using Cheung's formula was 6 Ω, 4.8 Ω for FGR V-SBD, 10.7 Ω, 6.7 Ω for MGR V-SBD, respectively, and the breakdown voltage was 528 V for FGR V-SBD and 358 V for MGR V-SBD. Degradation of electrical characteristics of the MGR V-SBD can be attributed to the increased reverse leakage current caused by the guard ring structure, and it is expected that the electrical performance can be improved by preventing premature leakage current when an appropriate reverse voltage is applied to the guard ring area. On the other hand, FGR V-SBD shows overall better electrical properties than MGR V-SBD because Al₂O₃ was widely deposited on the Ga₂O₃ surface, which prevent leakage current on the Ga₂O₃ surface.

• 대한수학회보
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• 제55권1호
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• pp.115-137
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• 2018

Let $R_{u{^2},v^2,w^2,p}$ be a finite non chain ring ${\mathbb{F}}_p[u,v,w]{\langle}u^2,\;v^2,\;w^2,\;uv-vu,\;vw-wv,\;uw-wu{\rangle}$, where p is a prime number. This ring is a part of family of Frobenius rings. In this paper, we explore the structures of cyclic codes over the ring $R_{u{^2},v^2,w^2,p}$ of arbitrary length. We obtain a unique set of generators for these codes and also characterize free cyclic codes. We show that Gray images of cyclic codes are 8-quasicyclic binary linear codes of length 8n over ${\mathbb{F}}_p$. We also determine the rank and the Hamming distance for these codes. At last, we have given some examples.

• 대한수학회논문집
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• 제28권4호
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• pp.669-677
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• 2013

In this paper we introduce the notion of NI near-rings similar to the notion introduced in rings. We give topological properties of collection of strongly prime ideals in NI near-rings. We have shown that if N is a NI and weakly pm near-ring, then $Max(N)$ is a compact Hausdorff space. We have also shown that if N is a NI near-ring, then for every $a{\in}N$, $cl(D(a))=V(N^*(N)_a)=Supp(a)=SSpec(N){\setminus}int\;V(a)$.