• Title/Summary/Keyword: V-ring

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PRODUCT OF FUZZY ${H_v}-IDEALS$ IN ${H_v}-RINGS$

  • Davvaz, B.
    • Journal of applied mathematics & informatics
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    • v.8 no.3
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    • pp.909-917
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    • 2001
  • In this paper we define product between fuzzy ${H_v}-ideals$ of given ${H_v}-rings$. we consider the fundamental relation ${\gamma}^*$ defined on and ${H_v}-ring$ and give some properties of the fundamental relations and fundamental rings with respect to the product of fuzzy ${H_v}-ideals$.

Design and Manufacturing processes of Ti-6Al-4V profiled ring-products (Ti-6Al-4V 합금의 형상 링 압연공정 설계 및 제조기술)

  • Kim, K.J.;Kim, N.Y.;Lee, J.M.;Yeom, J.T.
    • Proceedings of the Korean Society for Technology of Plasticity Conference
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    • 2009.10a
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    • pp.72-75
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    • 2009
  • Design and Manufacturing processes of Ti-6Al-4V profiled ring-products were investigated with three-dimensional FEM simulation and experimental analyses. FEM simulation for the ring-rolling process was used to calculate the state variables such as strain, strain rate and temperature. In the simulation results of strain and temperature distributions for a plane ring rolling process, the strain level at the surface area is higher than that at the mid-plane, but the temperature level at the surface area is lower than that at mid-plane due to heat transfer between the workpiece and the work roll. These distributions showed a great influence on the evolution of microstructure in different positions. In order to induce the uniform deformation of the profile ring and reduce the applied load, the final blank was prepared by two-step processes. The mechanical properties of Ti-6Al-4V alloy ring products made in this work were investigated with tensile and impact tests and analyzed with the evolution of microstructures during the ring rolling process.

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Process Design for Large-Scale Ring-Rolling of Ti-6Al-4V Alloy (Ti-6Al-4V 합금의 대형 링 압연공정설계)

  • Yeom, J.T.;Kim, J.H.;Lee, D.G.;Park, N.K.;Choi, S.S.;Lee, C.S.
    • Transactions of Materials Processing
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    • v.16 no.3 s.93
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    • pp.172-177
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    • 2007
  • The process design for large-scale ring rolling of Ti-6Al-4V alloy was performed by calculation method, processing map approach and FEM simulation. The ring rolling design includes geometry design and optimization of process variables. The calculation method was used to make geometry design such as initial billet and blank sizes, and final rolled ring shape. A commercial FEM code, SHAPE-RR was used to simulate the effect of process variables in ring rolling on the distribution of the internal state variables such as strain, strain rate and temperature. In order to predict the forming defects during ring rolling and the formation of over-heating above $\beta$-transus temperature due to deformation heating, the process-map approach based on Ziegler's instability criterion was used with FEM simulation. Finally, an optimum process design to obtain sound Ti-6Al-4V rings without forming defects was suggested through combined approach of Ziegler's instability map and FEM simulation results.

A NOTE ON VERTEX PAIR SUM k-ZERO RING LABELING

  • ANTONY SANOJ JEROME;K.R. SANTHOSH KUMAR;T.J. RAJESH KUMAR
    • Journal of applied mathematics & informatics
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    • v.42 no.2
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    • pp.367-377
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    • 2024
  • Let G = (V, E) be a graph with p-vertices and q-edges and let R be a finite zero ring of order n. An injective function f : V (G) → {r1, r2, , rk}, where ri ∈ R is called vertex pair sum k-zero ring labeling, if it is possible to label the vertices x ∈ V with distinct labels from R such that each edge e = uv is labeled with f(e = uv) = [f(u) + f(v)] (mod n) and the edge labels are distinct. A graph admits such labeling is called vertex pair sum k-zero ring graph. The minimum value of positive integer k for a graph G which admits a vertex pair sum k-zero ring labeling is called the vertex pair sum k-zero ring index denoted by 𝜓pz(G). In this paper, we defined the vertex pair sum k-zero ring labeling and applied to some graphs.

A Study on Profile Ring Rolling Process of Titanium Alloy (타이타늄합금 형상 링 압연공정 연구)

  • Yeom, J.T.;Kim, J.H.;Lee, D.G.;Park, N.K.;Choi, S.S.;Lee, C.S.
    • Transactions of Materials Processing
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    • v.16 no.4 s.94
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    • pp.223-228
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    • 2007
  • The profile ring rolling process of Ti-6Al-4V alloy was investigated by finite element(FE) simulation and experimental analysis. The process design of the profile ring rolling includes geometry design and optimization of process variables. The geometry design such as initial billet and blank sizes, and final rolled ring shape was carried out with the calculation method based on the uniform deformation concept between the wall thickness and ring height. FEM simulation was used to calculate the state variables such as strain, strain rate and temperature and to predict the formation of forming defects during ring rolling process. Finally, the mechanical properties of profiled Ti-6Al-4V alloy ring product were analyzed with the evolution of microstructures during the ring rolling process.

Study on New LIGBT with Multi Gate for High Speed and Improving Latch up Effect (래치 업 특성의 개선과 고속 스위칭 특성을 위한 다중 게이트 구조의 새로운 LIGBT)

  • 강이구;성만영
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.13 no.5
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    • pp.371-375
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    • 2000
  • In this paper a new conductivity modulated power transistor called the Lateral Insulated Gated Bipolar Transistor which included n+ ring and p-channel gate is presented. A new lateral IGBT structure is proposed to suppress latch-up and to improve turn off time by imploying n+ ring and p-channel gate and verified by MEDICI. The simulated I-V characteristics at $V_{G}$=15V show that the latch up occurs at $V_{A}$=18V and 6.9$\times$10$^{-5}$ A/${\mu}{\textrm}{m}$ for the proposed LIGBT while the conventional LIGBT latches at $V_{A}$=1.3V and 1.96${\mu}{\textrm}{m}$10$^{-5A}$${\mu}{\textrm}{m}$. It is shown that turn off characteristic of new LIGBT is 8 times than that of conventional LIGBT. And noble LIGBT is not n+ buffer layer because that It includes p channel gate and n+ ring. Therefore Mask for the buffer layer isn’t needed. The concentration of n+ ring is and the numbers of n+ ring and p channel gate are three for the optimal design.n.n.n.n.

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Dither-stripping with the differential of dither rate signal for a ring laser gyroscope (링레이저 자이로의 각진동 센서신호 미분에 의한 dither-stripping)

  • Shim, Kyu-Min;Chung, Tae-Ho;Lim, Hoo-Jang
    • Journal of the Korean Society for Aeronautical & Space Sciences
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    • v.33 no.8
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    • pp.65-74
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    • 2005
  • It is required for getting the ring laser gyro output purely related to the input rotation to eliminate the output of the modulated angular vibration from the ring laser signal. In this paper we discuss the dither stripping methods of compensating the ring laser signal by converting the rate signal of dither detector from voltage to frequency for a dither type ring laser gyro. We discuss the differential methods for getting rid of the offset of the V-F signal. And we develope the methods of compensating the phase differences between the ring laser signals and the V-F differential signals by using analog integrator and digital time delays. And also, we develope the gain calculation method by comparing the standard deviations of the ring laser signals with V-F differential signals. We implemented these methods and analyzed the effectiveness of these methods by comparing the dither trapping methods.

Comparison of Electrical Properties of β-Gallium Oxide (β-Ga2O3) Power SBDs with Guard Ring Structures (Guard Ring 구조에 따른 β-산화갈륨(β-Ga2O3) 전력 SBDs의 전기적 특성 비교)

  • Hoon-Ki Lee;Kyujun Cho;Woojin Chang;Jae-Kyoung Mun
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.37 no.2
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    • pp.208-214
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    • 2024
  • This reports the electrical properties of single-crystal β-gallium oxide (β-Ga2O3) vertical Schottky barrier diodes (SBDs) with a different guard ring structure. The vertical Schottky barrier diodes (V-SBDs) were fabricated with two types guard ring structures, one is with metal deposited on the Al2O3 passivation layer (film guard ring: FGR) and the other is with vias formed in the Al2O3 passivation layer to allow the metal to contact the Ga2O3 surface (metal guard ring: MGR). The forward current values of FGR and MGR V-SBD are 955 mA and 666 mA at 9 V, respectively, and the specific on-resistance (Ron,sp) is 5.9 mΩ·cm2 and 29 mΩ·cm2. The series resistance (Rs) in the nonlinear section extracted using Cheung's formula was 6 Ω, 4.8 Ω for FGR V-SBD, 10.7 Ω, 6.7 Ω for MGR V-SBD, respectively, and the breakdown voltage was 528 V for FGR V-SBD and 358 V for MGR V-SBD. Degradation of electrical characteristics of the MGR V-SBD can be attributed to the increased reverse leakage current caused by the guard ring structure, and it is expected that the electrical performance can be improved by preventing premature leakage current when an appropriate reverse voltage is applied to the guard ring area. On the other hand, FGR V-SBD shows overall better electrical properties than MGR V-SBD because Al2O3 was widely deposited on the Ga2O3 surface, which prevent leakage current on the Ga2O3 surface.

CYCLIC CODES OVER THE RING 𝔽p[u, v, w]/〈u2, v2, w2, uv - vu, vw - wv, uw - wu〉

  • Kewat, Pramod Kumar;Kushwaha, Sarika
    • Bulletin of the Korean Mathematical Society
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    • v.55 no.1
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    • pp.115-137
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    • 2018
  • Let $R_{u{^2},v^2,w^2,p}$ be a finite non chain ring ${\mathbb{F}}_p[u,v,w]{\langle}u^2,\;v^2,\;w^2,\;uv-vu,\;vw-wv,\;uw-wu{\rangle}$, where p is a prime number. This ring is a part of family of Frobenius rings. In this paper, we explore the structures of cyclic codes over the ring $R_{u{^2},v^2,w^2,p}$ of arbitrary length. We obtain a unique set of generators for these codes and also characterize free cyclic codes. We show that Gray images of cyclic codes are 8-quasicyclic binary linear codes of length 8n over ${\mathbb{F}}_p$. We also determine the rank and the Hamming distance for these codes. At last, we have given some examples.

TOPOLOGICAL CONDITIONS OF NI NEAR-RINGS

  • Dheena, P.;Jenila, C.
    • Communications of the Korean Mathematical Society
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    • v.28 no.4
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    • pp.669-677
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    • 2013
  • In this paper we introduce the notion of NI near-rings similar to the notion introduced in rings. We give topological properties of collection of strongly prime ideals in NI near-rings. We have shown that if N is a NI and weakly pm near-ring, then $Max(N)$ is a compact Hausdorff space. We have also shown that if N is a NI near-ring, then for every $a{\in}N$, $cl(D(a))=V(N^*(N)_a)=Supp(a)=SSpec(N){\setminus}int\;V(a)$.