• Proceedings of the Korean Vacuum Society Conference
• /
• 2015.08a
• /
• pp.189-189
• /
• 2015

Plasmonics, sensor, field effect transistors, solar cells 등 다양한 적용분야를 가지는 실리콘 구조체는 제작공정에 의해 전기적 및 광학적 특성이 달라지기 때문에 적합한 나노구조 제작방법이 요구되고 있다. 나노구조체 제작방법으로는 Photo lithography, Extreme ultraviolet lithography (EUV), Nano imprinting lithography (NIL), Block copolymer (BCP) 방식의 방법들이 연구되고 있으며, 특히 BCP는 direct self-assembly 특성을 가지고 있으며 가격적인 면에서도 큰 장점을 가진다. 하지만 BCP를 mask로 사용하여 식각공정을 진행할 경우 BCP가 버티지 못하고 변형되어 mask로서의 역할을 하지 못한다. 이러한 문제를 해결하기 위하여 본 논문에서는 BCP와 질화막을 이용한 double mask 방법을 사용하였다. 기판 위에 BCP를 self-assembly 시키고 mask로 사용하여 hole 부분으로 노출된 기판을 Ion gun을 통해 질화 시킨 후에 BCP를 제거한다. 기판 위에 hole 모양의 질화막 표면은 BCP와 다르게 etching 공정 중 변형되지 않는다. 이러한 질화막 표면을 mask로 사용하여 pillar pattern의 실리콘 나노구조체를 제작하였다. 질화막 mask로 사용되는 template은 PS와 PMMA로 구성된 BCP를 사용하였다. 140kg/mol의 polystyrene과 65kg/mol의 PMMA를 톨루엔으로 용해시키고 실리콘 표면 위에 spin coating으로 도포하였다. Spin coat 후 230도에서 40시간 동안 열처리를 진행하여 40nm의 직경을 가진 PS-b-PMMA self-assembled hole morphology를 형성하였다. 질화막 형성 및 etching을 위한 장비로 low-energy Ion beam system을 사용하였다. Reactive Ion beam은 ICP와 3-grid system으로 구성된 Ion gun으로부터 형성된다. Ion gun에 13.56 MHz의 frequency를 갖는 200W 전력을 인가하였다. Plasma로부터 나오는 Ion은 $2{\Phi}$의 직경의 hole을 가지는 3-grid hole로 추출된다. 10~70 voltage 범위의 전위를 plasma source 바로 아래의 1st gird에 인가하고, 플럭스 조절을 위해 -150V의 전위를 2nd grid에 인가한다. 그리고 3rd grid는 접지를 시켰다. chamber내의 질화 및 식각가스 공급은 2mTorr로 유지시켰다. 그리고 기판의 온도는 냉각칠러를 이용하여 -20도로 냉각을 진행하였다. 이와 같은 공정 결과로 100 nm 이상의 높이를 갖는 40 nm직경의 균일한 Silicon pillar pattern을 형성 할 수 있었다.

• Proceedings of the IEEK Conference
• /
• 2000.06b
• /
• pp.56-59
• /
• 2000

In this paper, we have made a comparison between secondary ion mass spectroscopy(SIMS) data by the 5kcV-15keV boron implantation and computer simulation results. In order to make electrical activation of implanted carriers, thermal annealing are carried out by RTP method for 30s at 1000$^{\circ}C$ Two dimensional doping concentration distribution from different mask dimensions under inert gas annealing, dry-, and wet-oxidation condition were calculated and simulated with microtec simulator.

• Proceedings of the Optical Society of Korea Conference
• /
• 2004.07a
• /
• pp.130-131
• /
• 2004

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 2009.06a
• /
• pp.414-414
• /
• 2009

나노스피어 리소그래피는 기존의 리소그래피 방법에 비해 나노 크기 패턴을 제작하는데 공정이 간단하며 재현성있게 대면적에 패터닝이 가능하다는 장점이 있다. 본 연구에서는 Vertical LED(V-LED)의 External quantum efficiency 향상을 위하여 나노스피어 리소그래 피를 이용하여 V-LED의 n-GaN 표면을 패터닝을 하였다. n-GaN 위에 Sputter를 이용하여 $SiO_2$를 증착 후 나노스피어를 스핀 코팅을 이용하여 단일막을 형성하였다. 그 후, 반응성 이온 식각 장치를 이용하여 나노스피어의 크기를 조절하고 $SiO_2$층을 식각하였다. 다음과 같은 공정 후 $SiO_2$층을 Mask층으로 하여 n-GaN 표면을 식각하였다. 실험 결과 나노스피어 리소그래피를 이용하여 V-LED의 External quantum efficiency 향상을 위한 n-GaN 표면의 패턴 제작이 가능함을 확인할 수 있었다.

• Journal of the Korean Chemical Society
• /
• v.58 no.6
• /
• pp.524-527
• /
• 2014

We report a simple yet efficient method to assemble large-scale aligned graphene nanoribbons (GNRs) with a width as small as 30 nm. The $V_2O_5$ nanowires (NWs) were aligned on a graphene surface via spraying a solution of the $V_2O_5$ NWs, and the graphene was selectively etched by the reactive ion etching method using the $V_2O_5$ NWs as a shadow mask. This process allowed us to prepare large scale patterns of the aligned GNRs on a $SiO_2$ substrate. The orientation of the aligned and randomly oriented GNRs was compared by the atomic force microscope (AFM) images. We achieved the highly aligned GNRs along the flow direction of the $V_2O_5$ NWs solution. Furthermore, we successfully fabricated a field effect-transistor with the aligned GNRs and measured its electrical properties. Since our method enable to prepare the aligned GNRs over a large area, it should open up new way for the various applications.

• Journal of the Institute of Electronics Engineers of Korea SD
• /
• v.40 no.6
• /
• pp.421-430
• /
• 2003

In the embedded system, EPROM is difficult to replace a mask ROM for the applications using battery, because the low voltage characteristic of an EPROM is inferior to that of a mask ROM. In this paper, the new circuits such as a word line voltage hoosier scheme and a sense amplifier without reference input for an embedded EPROM in MCU are proposed. The circuits can detect bit line voltage a predetermined level, which is caused by the degradation of the battery. We fabricated a MCU embedded 32Kbytes EPROM. The proposed circuits well operated at 1.5V supply voltage and thus the low voltage performance was improved by about 30%.

• Nuclear Engineering and Technology
• /
• v.50 no.6
• /
• pp.923-928
• /
• 2018

We developed a compact gamma camera based on a modified uniformly redundant array coded aperture to investigate the position of a $UO_2$ pellet emitting characteristic X-rays (98.4 keV) and ${\gamma}-rays$ (185.7 keV). Experiments using an only-mask method and an antimask subtractive method were conducted, and the maximum-likelihood expectation maximization algorithm was used for image reconstruction. The images obtained via the antimask subtractive method were compared with those obtained using the only-mask method with regard to the signal-to-noise ratio. The reconstructed images of the antimask subtractive method were superior. The reconstructed images of the characteristic X-rays and the ${\gamma}-rays$ were combined with the obtained image using the optical camera. The combined images showed the precise position of the $UO_2$ pellet. According to the self-absorption ratios of the nuclear material and the minimum number of effective events for image reconstruction, we estimated the minimum detection time depending on the amount of nuclear material.

• Journal of Korean Society of Industrial and Systems Engineering
• /
• v.46 no.3
• /
• pp.275-284
• /
• 2023

Land monitoring involves systematically understanding changes in land use, leveraging spatial information such as satellite imagery and aerial photographs. Recently, the integration of deep learning technologies, notably object detection and semantic segmentation, into land monitoring has spurred active research. This study developed a web service to facilitate such integrations, allowing users to analyze aerial and drone images using CNN models. The web service architecture comprises AI, WEB/WAS, and DB servers and employs three primary deep learning models: DeepLab V3, YOLO, and Rotated Mask R-CNN. Specifically, YOLO offers rapid detection capabilities, Rotated Mask R-CNN excels in detecting rotated objects, while DeepLab V3 provides pixel-wise image classification. The performance of these models fluctuates depending on the quantity and quality of the training data. Anticipated to be integrated into the LX Corporation's operational network and the Land-XI system, this service is expected to enhance the accuracy and efficiency of land monitoring.

• Progress in Medical Physics
• /
• v.31 no.2
• /
• pp.29-34
• /
• 2020

Purpose: The interaction of various substances inserted into the human body and radiation can confirm the radiation enhancement effect. A Leksell frame inserted into the human body for gamma knife treatment will cause not only pain and inconvenience to the patient, but also additional exposure to the patient's normal tissues. In this study, we attempt to confirm the additional exposure caused by the interaction of the Leksell frame and thermoplastic mask, and ⁶⁰Co used for gamma knife treatment. Methods: A ⁶⁰Co energy of 1.17, 1.33 MeV is applied using Monte Carlo simulation, and fixation screws and thermoplastic mask are fabricated using aluminum and titanium alloy, and Carbon compounds. Results: Results show a dose enhancement of up to 396.27% higher compared with that without a Leksell frame and up to 391.25% in thermoplastic mask. Conclusions: Hence, appropriate treatment methods and materials must be used to reduce additional exposure to normal tissues.

• The Journal of the Korea institute of electronic communication sciences
• /
• v.16 no.3
• /
• pp.417-422
• /
• 2021

In this paper, a ZQ calibration using a time domain comparator is proposed. The proposed comparator is designed based on VCO, and an additional clock generator is used to reduce power consumption. By using the proposed comparator, the reference voltage and the PAD voltage were compared with a low 1 LSB voltage, so that the additional offset cancelation process could be omitted. The proposed time domain comparator-based ZQ calibration circuit was designed with a 65nm CMOS process with 1.05V and 0.5V supply voltages. The proposed clock generator reduces power consumption by 37% compared to a single time domain comparator, and the proposed ZQ calibration increases the mask margin by up to 67.4%.