• Journal of Information Processing Systems
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• v.18 no.3
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• pp.389-401
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• 2022

The business of Internet of Vehicles (IoV) is growing rapidly, and the large amount of data exchange has caused problems of large mobile network communication delay and large energy loss. A strategy for resource allocation of IoV communication based on mobile edge computing (MEC) is thus proposed. First, a model of the cloud-side collaborative cache and resource allocation system for the IoV is designed. Vehicles can offload tasks to MEC servers or neighboring vehicles for communication. Then, the communication model and the calculation model of IoV system are comprehensively analyzed. The optimization objective of minimizing delay and energy consumption is constructed. Finally, the on-board computing task is coded, and the optimization problem is transformed into a knapsack problem. The optimal resource allocation strategy is obtained through genetic algorithm. The simulation results based on the MATLAB platform show that: The proposed strategy offloads tasks to the MEC server or neighboring vehicles, making full use of system resources. In different situations, the energy consumption does not exceed 300 J and 180 J, with an average delay of 210 ms, effectively reducing system overhead and improving response speed.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.48 no.10
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• pp.54-61
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• 2011

In this paper, a simple analytical model for deriving the I-V characteristics of a cylindrical surrounding gate SOI MOSFET with intrinsic silicon core is suggested. The Poisson equation in the intrinsic silicon core and the Laplace equation in the gate oxide layer are solved analytically. The surface potentials at both source and drain ends are obtained by means of the bisection method. From them, the surface potential distribution is used to describe the I-V characteristics in a closed-form. Simulation results seem to show the dependencies of the I-V characteristics on the various device parameters and applied bias voltages within a range of satisfactory accuracy.

• Electrical & Electronic Materials
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• v.9 no.7
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• pp.719-726
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• 1996

DLTS measurements were performed to study the annealing induced changes of the trap centers in MOV and to shed more light on the stability mechanism of the MOV. Two electron traps, Ec-0.26[eV] and Ec-(O.2-0.3)[eV], were observed in the unannealed samples in large quantities(7-9 X 1014[CM 3]), whereas the three electron traps Ec-0.17 [eV], Ec-0.26[eV] and Ec-(O.2-0.3)[eV] were observed far less in the annealed samples. The minima in the Ec-0.26[eV] trap density, coupled with the presented results that unannealed devices are unstable whereas 600.deg. C annealed devices are most stable, suggests that the instability of the MOV under long term electrical stressing is related to the Ec-0.26[eV] trap. This results support that the ion migration model for the device instability where the Ec-0.26[eV] defects may be the interstitial zinc or the migrating ions. The interstitial zinc originated as a result of the nonstoichiometric nature of ZnO might cause the degradation of the I-V characteristics of the MOV with long term electrical stressing.

• Proceedings of the KIEE Conference
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• 1991.07a
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• pp.753-756
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• 1991

This paper aimed to analyse dose sensitivity to the controllable parameters of in-door radon $(^{222}Rn)$ and its decay products(Rn-D) by applying the input-output linear system theory. Physical behaviors of $^{222}Rn$ & Rn-D were analyzed in terms of $^{222}Rn$ gas generation, -migation and - infiltration to indoor environments, and the performance output-function(i.e. mean dose equivalent to Tracho-Bronchial(TB) lung region was assessed to the following ranges of the controllable parameters; a) the ventilation rate constant $({\lambda}_v)$ : $0{\sun}500[h^{-1}]$. b) the attachment rate constant$({\lambda}_a)$ : 0-500 $[h^{-1}]$. c) deposition rate constant $({\lambda}{_{d}^{u}})$: 0-50$[h^{-1}]$. A linear input-output model was reconstructed from the original models in literatures, as follows, which was modified into the matrices consisting of 111 nodal equations. a) indoor ${222}Rn$ & Rn-D Behaviour: jacobi- Porstendorfer- Bruno model. b) lung dosimerty : Jacobi-Eisfeld model. Some of the major findings, which identify the effectiveness of this model, were as follows. a) ${\lambda}_v$ is most effective, dominant controllable parameters in dose reduction, if mechanical ventilation is applied. b) ${\lambda}_v$, depending on the air particle-concentration, reduces the dose somewhat within ${\lambda}_v$<1 $h^{-1}R range. However, the dose increases conversely, ${\lambda}_v$>1 $h^{-1}R range range. c) ${\lambda}{_{d}^{4}}$ reduces the dose linearly as ${\lambda}_v$ dose. Such dose(z-axis) sentivities are shown with three-dimensional plots whoes x,y-axes are combined 2out the 3 parameter${\lambda}_v{\lambda}_s,\;{\lambda}_d^s$.

• 한국정보디스플레이학회:학술대회논문집
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• 2007.08a
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• pp.509-512
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• 2007

In this paper, we report our successful implementation of Q tensor model in threedimensional finite element method (FEM) simulator. The 3D-FEM Q tensor-model-based simulation revealed that the spaly-to-bend transition occurs only at 4 V while the vector-model based FEM solver provides an erroneous transition voltage of 8 V.

• Journal of the Korean Chemical Society
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• v.28 no.1
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• pp.26-33
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• 1984

The rate constants for the following vibration-to-vibration energy exchange reactions have been calculated theoretically for the temperature range from 300 to 800K and for n = 2 to 5. HF(v=n) + DF(v=0) ${\to}$ HF(v=n-l) + DF(v=l) + ${\Delta}E$(a) DF(v=n) + HF(v=0) ${\to}$ DF(v=n-l) + HF(v=l) + ${\Delta}E$(b) In calculation the loosely-held, non-rigid dimer collision model and semiclassical method have been employed. The results show that the rate constants for the processes (a) are much greater than those for the processes (b). Also, it is found that the rate constants for the processes (a) increase with decreasing temperature and with increasing quantum number, while those for the processes (b) show the opposite tendencies. These findings are explained in terms of the sign and magnitude of the energy mismatch, ${\Delta}E$.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.18 no.10
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• pp.1157-1162
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• 2007

In this paper, E-TDLNN(Expanded-Tapped Delay Line Neural Network) method is suggested to make the model of power amplifier effectively. This method is the one for making the model of power amplifier through the study in neural network to the target value, the measured output spectrum of power amplifier, after adding the external value factor, gate bias, as an invariant input to the TDLNN method which suggested the memory effect of power amplifier effectively. To prove the validity of suggested method, the data at 2 points, 3.45 V and 3.50 V of gate bias range $3.4{\sim}3.6V$ with the 0.01 V step change, are studied and the predicted results at the gate bias 3.40 V, 3.48 V, 3.53 V and 3.60 V shows good coincidence with the measured values.

• Proceedings of the KIEE Conference
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• 1998.07e
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• pp.1586-1588
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• 1998

To use the EMTP, in this paper, a arcing horn is simulated by non-linear resistor and inductor element using TACS, a tower by distributed parameter model, and lines as K. C. Lee model. Changing lightning current characteristics, lightning position, and tower footing resistor value, we analysis multi-phase flashover characteristics in 765 kV transmission line.

• Journal of the Korean Society of Fisheries and Ocean Technology
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• v.27 no.4
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• pp.286-292
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• 1991

The authors propose to use the vortex generators in order to improve of the efficiency for the cambered otter boards. The equipments and testing method of this model test was the same as the previous report. This study was tested for 6 models such as the single cambered, the V-shaped cambered and the slotted cambered otter board without and with vortex generators. The results obtained are as follows: \circled1 C sub(L) of the single cambered model otter board with vortex generators was increased about 10% in comparison with that of model without vortex generators, C sub(D) decreased 2%, and L/D increased 5~20%. \circled2 L/D of the V-shaped cambered model otter board with vortex generators was increased 10~20% in comparison with that of model without vortex generators. \circled3 C sub(L) of the two slotted cambered model otter board with vortex generators was increased about 20% within an angle of attack 25$^{\circ}$ in comparison with that of without vortex generators, C sub(D) increased 5~20%, and L/D was higher than prototype within an angle of attack 20$^{\circ}$. \circled4 The separation point of the model otter boards with vortex generators was removed back ward a little in comparison with that of the model without vortex generators. \circled5 Flow speed difference of the back side to the front side of model otter boards with vortex generators was increased a little in comparison with that of the models without vortex generators. \circled6 The size of separation zone in case of the model otter boards with vortex generators was decreased about 10% in comparison with that of the models without vortex generators.

• Journal of the Korean Institute of Illuminating and Electrical Installation Engineers
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• v.22 no.6
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• pp.34-43
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• 2008

The state-space average model is extended to buck-boost, and buck-boost topology switching mode DC/DC converters and modified to have higher precision without increment of computation. The modified model is used in continuous conduction mode(CCM) switching DC/DC converters and some significant conclusions are derived. This paper discusses the discontinuous conduction mode(DCM) modeling of DC/DC converter and critical characteristic using average model of switch. Average model of switch approach is expended to the modeling of boundary conduction mode DC/DC converters that operate at the boundary between continuous conduction mode(CCM) and discontinuous conduction mode(DCM). Frequency responses predicted by the average model of switch are verified by simulation and experiment. A prototype featuring 15[V] input voltage, 24[V] output voltage, and 24[W] output power using MOSFET.