• Bulletin of the Korean Chemical Society
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• v.21 no.9
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• pp.909-912
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• 2000

Thallium(I) selective electrodes based on meso-alkyl substituted calix[4]pyrroles such as, meso-octamethyl-calix[4]pyrrole (L1), meso-octaethylcalix[4]pyrrole (L2) and meso-tetraspirocyclohexylcalix[4]pyrrole (L3) as sensor molecules have been pre pared and tested. The conditioned electrode (E4) incorporating L3gave best results with a wide working concentration range of 10-5.5 ~10-1 M near-Nernstian slope of 56.0 mV/decade of activity and detection limit of 10-6.0 M. This electrode exhibited a fast response time of 30 s and high selectivity over Na+ , K+ and other metal ions with only Ag+ interfering. The electrode works well in the pH range 2.0-11.0 and can be successfully employed for the determination of Tl+.This proposed electrode was also used as an indicator electrode in potentiometric titration of Tl+.

• Bulletin of the Korean Chemical Society
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• v.24 no.11
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• pp.1585-1589
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• 2003

A PVC-based membrane electrode for thallium(I) ions based on 1,21,23,25-tetramethyl-2,20: 3,19-dimetheno-[H, 2] H, 23H, 25H-bis-[1,3] dioxocino[5,4-i:5',4'-i] benzo [1,2-d: 5.4-d'] bis [1,3] benzodioxocin(II) has been prepared. The electrode displays a linear dynamic range of $1.0{\times}10^{-1}-1.0{\times}10^{-5}$ M, with a Nernstian slope of $59.8{\pm}0.2\;mV\;{decad^-1}$, and a detection limit $5.0{\times}10^{-6}$ M. It has a very fast response time of<10 s and can be used for at least ten weeks without a considerable divergence in potentials. This electrode revealed comparatively good selectivity with respect to alkali, alkaline earth, and some transition and heavy metal ions and was effective in a pH range of 2.0-10.0. It was used as an indicator electrode in potentiometric titration of thallium ion with sulfide ion.

• Ocean and Polar Research
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• v.31 no.2
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• pp.177-187
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• 2009

This study examined the multi-scale variabilities of sea surface temperature (SST) and salinity in the Japan/East Sea (JES) based on statistical analyses of observational data, with a focus on the northwestern part of the sea. The regionality of JES SST variability was estimated for different frequency ranges on semimonthly (11-17 days), monthly to seasonal (30-90 days), quasi-semiannual (157-220 days), and quasi-biennial (1.5-3 years) time scales using cluster analyses of daily gridded SST data for 1996 to 2007 from the Japan Meteorological Agency (JMA). Several significant peaks and regional cores were found in each frequency range of the SST anomaly (SSTA) oscillations. Quasi-semiannual SSTA oscillations with high amplitude were found in the south-southwestern part of the Japan Basin ($41-43^{\circ}N$) and were amplified in the area adjacent to Peter the Great Bay. Oscillations with periods of 79 and 55 days also prevailed over the southwest Japan Basin between the Yamato Rise and the continental slope. A similar method was applied to classify SST and the annual cycle of surface salinity using Generalized Digital Environmental Model (GDEM) gridded data. The Tatarskii Strait and adjacent area showed the most specific annual cycles and variability in salinity on interannual to interdecadal time scales. The most significant inverse relationship between surface salinity in the Tatarskii Strait and southern JES areas was found on the interdecadal time scale. Linkages of sea water salinity in the Tatarskii Strait with Amur River discharge and wind velocity over Amurskii Liman were also revealed.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.8 no.4
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• pp.640-644
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• 1998

We have fabricated Sb/SiC(4H) Schottky barrier diode (SBD) of which characteristics compared with that of Ti/SiC(4H) SBD. The donor concentration of the n-type SiC(4H) obtained by capacitance-voltage (C-V) measurement was about $2.5{\times}10 ^{17}{\textrm}cm^{-3}$. The ideality factors of 1.31 was obtained from the slope of forward current-voltage (I-V) characteristics of Sb/SiC(4H) SBD at low current density. The breakdown field of Sb/SiC(4H) SBD under the reverse bias voltage was about $4.4{\times}10^2V$/cm. The built-in potential and the Schottky barrier height (SBH) of Sb/SiC(4H) SBD were 1.70V and 1.82V, respectively, which were determined by the analysis of C-V characteristics. The Sb/SiC(4H) SBH of 1.82V was higher than Ti/SiC(4H) SBH of 0.91V. However, the current density and reverse breakdown field of Sb/SiC(4H) were low as compared with those of Ti/SiC(4H). The Sb/SiC(4H), as well as the Ti/SiC(4H), can be utilized as the Shottky barrier contact for the high-power electronic device.

• 한국정보디스플레이학회:학술대회논문집
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• 2005.07b
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• pp.1025-1028
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• 2005

Microcrystalline Si (${\mu}c-Si$) TFTs were fabricated using a conventional bottom gate amorphous Si (a-Si) process. A unique ${\mu}c-Si$ deposition technique and TFT architecture was proposed to enhance the reliability of the TFTs. This three-mask TFT fabrication process is comparable with existing a-Si TFT procesess. In order to suppress nucleation at the bottom interface of Si, before deposition of the ${\mu}c-Si$ an $N_2$ plasma passivation was conducted. A typical transfer characteristic of the TFTs shows a low off-current with a value of less than 1 pA and a sub threshold slop of 0.7 V/dec. The DC stress was applied to verify the use of ${\mu}c-Si$ TFTs for AMOLED displays. After 10,000 s of application of the stress, the off-current was even lowered and sub-threshold slope variation was less than 5%. For AMOLED displays, OLED pixel simulation was performed. A pixel current of 13 ${\mu}A$ was achieved with $V_{data}$ of 10 V. After the simulation, a linear equation for the pixel current was suggested.

• Geomechanics and Engineering
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• v.35 no.1
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• pp.55-65
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• 2023

Soft clay is widely spread in nature and encountered in geotechnical engineering applications. The creep property of soft clay greatly affects the long-term performance of its upper structures. Therefore, it is vital to establish a reasonable and practical creep constitutive model. In the study, two updated hyperbolic equations based on the volumetric creep and deviatoric creep are respectively proposed. Subsequently, three creep constitutive models based on different creep behavior, i.e., V-model (use volumetric creep equation), D-model (use deviatoric creep equation) and VD-model (use both volumetric and deviatoric creep equations) are developed and compared. From the aspect of prediction accuracy, both V-model and D-model show good agreements with experimental results, while the predictions of the VD-model are smaller than the experimental results. In terms of the parametric sensitivity, D-model and VD-model are lower sensitive to parameter M (the slope of the critical state line) than V-model. Therefore, the D-model which is developed by incorporating the updated deviatoric creep equation is suggested in engineering applications.

• Journal of Sensor Science and Technology
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• v.20 no.3
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• pp.156-161
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• 2011

We fabricated a schottky barrier metal oxide semiconductor field effect transistor(SB-MOSFET) by applying indium-tin-oxide(ITO) to the source/drain on a highly resistive GaN layer grown on a silicon substrate. The MOSFET, with 10 ${\mu}M$ gate length and 100 ${\mu}M$ gate width, exhibits a threshold gate voltage of 2.7 V, and has a sub-threshold slope of 240 mV/dec taken from the $I_{DS}-V_{GS}$ characteristics at a low drain voltage of 0.05 V. The maximum drain current is 18 mA/mm and the maximum transconductance is 6 mS/mm at $V_{DS}$=3 V. We observed that the spectral photo-response characterization exhibits that the cutoff wavelength was 365 nm, and the UV/visible rejection ratio was about 130 at $V_{DS}$ = 5 V. The MOSFET-type UV detector using ITO, has a high UV photo-responsivity and so is highly applicable to the UV image sensors.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.11 no.4
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• pp.298-305
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• 1998

The PVC membrane electrode for measuring perchlorate ion was developed by incorporating various quaternary ammonium sallts. The effect of chemical structure, the content of active material, the kind of plasticizers, and the membrane thickness on the electrode characteristic such as the linear response range and Nernstian slope of the electrode were studied. It was obtained that the effect of the chemical structure of an active material on the electrode characteristics was improved with increasing the alkyl chain length of the quarternary ammonium salts in the ascending order of Aliquat 336P, TOAP, TDAP, and TDDAP. The optimum membrane composition was 9.09wt% of TDDAP, 30.3wt% of PVC, and 60.6wt% of plasticizer(DBP). And the optimum membrane thickness was 0.45mm at this composition. Under the above condition, the linear response range was $10^{-1}~1.2\times10^{-6}$M, and the detection limit was $5.1\times10^{-7}$M with the Nernstian slope of 57mV/decade of activity of perchlorate ion. The electrode potential was stable within the pH range from 4 to 11. The selectivity coefficient was as shown below: $SCN^->I^-NO_3^->Br^->ClO_3^->F^->Cl^->SO_4^{2-}$

• Journal of the Korean Institute of Landscape Architecture
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• v.23 no.2
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• pp.113-123
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• 1995

This study was conducted to find out appropriate rates of seed mixture of both native and foreign plants in order for stabilization of early afforestation and proper vegetation on road slope. The results are summarized as follows: 1. Characteristics of germination : After seeding, 2 weeks for both Lespedeza bicolor and Lespedeza cuneata, and 4 weeks for both Arundinella hirta and Zoysia japonica were needed for vigorous germination, and 1-4 wee17s for 3 cool-season grasses were spent for gradual germination. 2. Plant height : There was no difference between Lespedeza cuneata and Lespedeza bicolor in plant height by 7 treatments. As mixture rates of cool-season grasses were lowered, plant height of Arundinella hirta became longer. Descending order of co81-season grasses for plant height was Tall fescue, Perennial ryegrass and Creeping redfescue. 3. Number of tillers : The number of tillers tended to increase in the experimental plots where competition was low. 4 Ground cover rate : Ground cover rate was the highest in Mixture IV (96.7%) and was fluctuated from 13.3% on Sept. 13 to 45% on Nev. 3 in Mixture III. Descending order of gronud cover rates in 7 treaments was Mixture IV, Mixture III. Mixture II, Mixture Ⅶ, Mixture V, Mixture Ⅵ, Mixture I, and Mixtur III when measured on Oct. 13 5. Visual assessment: High preferences were observed on Mixture IV and Ⅶ In sun the best seed mixtures were Mixture IV and Ⅶ. It meant that (1) either mixture of 70% the native plants with 30% cool-season graaes or (2) mixture of 80% the native plants with 20% cool-season glasses was best for this study.

• Journal of the Korean Vacuum Society
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• v.9 no.2
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• pp.110-115
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• 2000

Deposition conditions of diamond thin films were optimized using hot-filament chemical vapor deposition (HFCVD). Boron-doped diamond thin films with varying boron densities were then fabricated using B4C solid pellets. Current-voltage responses and field emission currents were measured to test the characteristics of field emission display (FED). With the increase of boron doping, the crystal size of diamond decreased slightly, but its quality was not changed significantly in case of small doping. The I-V characterization was performed for Al/diamond/p-Si, and the current of doped diamond film was increased $10^4\sim10^5$ times as compared with that of undoped film. In the field emission properties, the electrons were emitted with low electric field with the increase of doping, while the emission current increased. The onset-field of electron emission was 15.5 V/$\mu\textrm{m}$ for 2 pellets, 13.6 V/$\mu\textrm{m}$ for 3 pellets and 11.1 V/$\mu\textrm{m}$ for 4 pellets. With the incorporation of boron, the slope of Fowler-Nordheim graph was decreased, revealing that the electron emission behavior was improved with the decrease of the effective barrier energy.