• Journal of Environmental Health Sciences
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• v.49 no.3
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• pp.159-168
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• 2023

Background: An ongoing environmental exposure assessment of humidifier disinfectants (HDs) has been conducted since November 2011 among individuals who experienced HD exposure-related adverse health effects. It is being performed in order to determine and quantify exposure to humidifier disinfectants in victims and their families. To date, the assessment has encompassed Cycles I-to-V. There is no report summarizing the characteristics of the subjects from the overall cycles. Objectives: We intended to examine the individual characteristics related to demographics, HD usage, and HD exposure using integrated data from Cycles I-to-V of the environmental exposure assessment of HDs and the changes with the cycles. Methods: We included 7,543 individuals who participated in Cycles I-to-V of the environmental exposure assessment of HDs. We summarized the participants' characteristics regarding their demographics (e.g., sex, education level, and age), HD usage history (e.g., product name, ingredient, and frequency of HD use), and HD exposure (e.g., daily time of HD use, cumulative time of HD use, and exposure intensity). In addition, their characteristics were compared across the cycles of the exposure assessment. Results: Among the 7,543 participants from Cycles I-to-V, there were more male participants than females (51.05% overall), except for Cycles I and III. Across all cycles, a higher proportion of survivors was observed than deceased individuals. While PHMG was the most prevalent ingredient in HDs throughout all the cycles, its proportion gradually decreased over the course of the examination cycles. Participants in Cycle I reported longer daily times of HD use compared to those in the subsequent cycles. On the other hand, cumulative time of HD use was shorter in the earlier cycles than in the later cycles. Conclusions: Using the integrated data from the full cycles of the environmental exposure assessment, this study identified changes in demographic characteristics as well as the HD exposure characteristics between the participants across different cycles.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1998.11a
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• pp.167-170
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• 1998

The electrical characteristics of Stearic acid LB films were investigated to develop the gas sensor using Langmuir-Blodgett(LB) films. The deposition status of LB films were verified by the measurements of UV absorbance and I-V characteristics. The conductivity of Stearic acid LB films at room temperature was $10^{-8}[S/cm]$, which is typical of semiconductor. The conductivity was found to increase as the temperature was increased. The acitivation energy was about 1[eV].

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1999.05a
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• pp.312-316
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• 1999

I-V characteristics of Praseodymium-based ZnO varistor doped with $Nd_2O_3$ in the range 0.0-2.0mol% sintered at 130$0^{\circ}C$ and 135$0^{\circ}C$ were investigated. In the all sides, ZnO varistors sintered at $1300^{\circ}C$ exhibited much better varistor characteristics than that at 135$0^{\circ}C$. All ZnO varistors doped with $Nd_2O_3$ sintered at $1300^{\circ}C$ exhibited good varistor characteristics but particularly ZnO varistor doped with l.Omol% $Nd_2O_3$ exhibited the best characteristics, which the nonlinear is 65.2 and the leakage current is 4.5pA. It is estimated that ZnO varistor doped with l.Omol% $Nd_2O_3$ will begin to be sufficiently used as basic composition to fabricate a good varistor.

• Proceedings of the Materials Research Society of Korea Conference
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• 2002.11a
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• pp.119-119
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• 2002

• Proceedings of the Korean Institute of IIIuminating and Electrical Installation Engineers Conference
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• 2007.11a
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• pp.259-262
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• 2007

In this paper approves AC high voltage by experimental GIS(Gas Insulated Switchgear) chamber and AC 300[kV] power source to study breakdown characteristics by pressure(P) change and change of electrode distance(d) at AC high voltage of Imitation Air(I-Air, $N_2$ : $O_2$ = 79(%) : 21[%]) to alternate $SF_6$ and achieved research. Gave P change of I-Air to study I-Air's breakdown characteristics using uniform(Sphere-Sphere electrode) and non-uniform fields(Needle-Plane electrode) and studied relations breakdown voltage($V_B$) by each P different d.

• Proceedings of the Korean Institute of IIIuminating and Electrical Installation Engineers Conference
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• 2007.05a
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• pp.385-388
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• 2007

In this paper approves AC high voltage by experimental GIS(Gas Insulated Switchgear) chamber and AC 300[kV] power source to study breakdown characteristics by pressure(P) change and change of electrode distance(d) at AC high voltage of Imitation Air(I-Air, $N_2$ : $O_2$ = 79[%] : 21[%]) to alternate $SF_6$ and achieved research. Gave P change of I-Air to study I-Air's breakdown characteristics using non-uniform fields(Needle--Plane electrode) and studied relations breakdown voltage ($V_B$) by each P different d.

• Proceedings of the KIEE Conference
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• 2007.07a
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• pp.1424-1425
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• 2007

In this paper approves AC high voltage by experimental GIS(Gas Insulated Switchgear) chamber and AC 300[kV] power source to study breakdown characteristics by pressure(P) change and change of electrode distance(d) at AC high voltage of Imitation Air(I-Air, $N_2$ : $O_2$ = 79[%] : 21[%]) to alternate $SF_6$ and achieved research. Gave P change of I-Air to study I-Air's breakdown characteristics using niform fields(Sphere-Sphere electrode) and non-uniform fields(Needle-Plane electrode) and studied relations breakdown voltage ($V_B$) by each P different d.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2007.11a
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• pp.171-172
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• 2007

We fabricated the metal-ferroelectric-insulator-semiconductor filed-effect transistors (MFIS-FETs) using the $(Bi,La)_4Ti_3O_{12}\;and\;LaZrO_x$ thin films. The $LaZrO_x$ thin film had a equivalent oxide thickness (EOT) value of 8.7 nm. From the capacitance-voltage (C-V) measurements for an Au/$(Bi,La)_4Ti_3O_{12}/LaZrO_x$/Si MFIS capacitor, a hysteric shift with a clockwise direction was observed and the memory window width was about 1.4 V for the bias voltage sweeping of ${\pm}9V$. From drain current-gate voltage $(I_D-V_G)$ characteristics of the fabricated Fe-FETs, the obtained threshold voltage shift (memory window) was about 1 V due to ferroelectric nature of BLT film. The drain current-drain voltage $(I_D-V_D)$ characteristics of the fabricated Fe-FETs showed typical n-channel FETs current-voltage characteristics.

• Proceedings of the KIEE Conference
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• 2009.07a
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• pp.2101.1_2102.1
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• 2009

Solar energy is an extreme intermittent and inconstant energy source. This paper presents the analysis of photovoltaic I-V characteristics according to the module temperature. It shows that the result of the relationship between DC current and the module temperature of solar cell will be effects by the increasing irradiation.

• Electrical & Electronic Materials
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• v.9 no.8
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• pp.806-812
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• 1996

I-V characteristics of ground electrode fabricated using an aluminium scrap are presented. We fabricated several shapes of aluminium scraps and aluminium electrodes. The results show that the current of aluminium electrode increased linearly by the voltage increase. AC breakdown voltage of copper plate electrode was higher than that of aluminium electrode. AC breakdown current of aluminium electrode was higher than that of copper plate electrode. As applied voltage increased, grounding resistance of aluminum electrode decreased linearly.