• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 1999년도 춘계학술대회 논문집
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• pp.26-29
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• 1999

The I-V characteristics of the n-channel offset gated poly-Si TETs have been systematically investigated in order to analyse the effects of offset region. The on currents are reduced due to the series resistance by the offset length and there is no kink phenomenon in offset devices. The off currents of the offset gated TFTs are remarkably reduced to 10$^{-12}$ A independent of gate and drain voltage because the electric field is weakened by the increase of the depletion region width near the drain region. It is shown that the offset regions behave as a series resistance and reduce lateral and vertical electric field.

• 전자공학회논문지
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• 제53권5호
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• pp.69-76
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• 2016

MCT (MOS Controlled Thyristor)의 전류 구동능력은 도통상태의 MCT를 턴-오프 시킬 수 있는 능력, 즉 off-FET의 성능에 의해 결정되고, MCT의 주된 응용분야인 펄스파워 분야에서는 턴-온 시의 피크전류($I_{peak}$)와 전류상승기울기(di/dt) 특성이 매우 중요하다. 이러한 요구사항을 만족시키기 위해서는 MCT의 on/off-FET 성능 조절이 중요하지만, 깊은 접합의 P-웰과 N-웰을 형성하기 위한 삼중 확산공정과 다수의 산화막 성장공정은 이온주입 불순물의 표면농도를 변화시키고 on/off-FET의 문턱전압($V_{th}$) 조절을 어렵게 한다. 본 논문에서는 on/off-FET의 $V_{th}$를 개선하기 위한 채널영역 문턱전압 이온주입에 대하여 시뮬레이션을 진행하고 이를 토대로 제작한 MCT의 전기적 특성을 비교 평가하였다. 그 결과 문턱전압 이온주입을 진행한 MCT의 경우(활성영역=$0.465mm^2$) $100A/cm^2$ 전류밀도에서의 전압손실($V_F$)은 1.25V, 800V의 어노드 전압에서 $I_{peak}$ 및 di/dt는 290A와 $5.8kA/{\mu}s$로 문턱전압 이온주입을 진행하지 않은 경우와 유사한 특성을 나타낸 반면, $100A/cm^2$의 구동전류에 대한 턴-오프 게이트전압은 -3.5V에서 -1.6V로 감소하여 MCT의 전류 구동능력을 향상시킴을 확인하였다.

• The Korean Journal of Physiology and Pharmacology
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• 제1권2호
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• pp.169-183
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• 1997

We have investigated the two types of voltage-dependent outward potassium (K) currents, i.e. delayed rectifier K current ($I_{K(V)}$) and 'A-like' transient outward K current ($I_{to}$) with patch-clamp technique in single smooth muscle cells (SMCs) isolated from rabbit basilar artery, and investigated the characteristics of them. The time-courses of activation were well fitted by exponential function raised to second power ($n^2$) in $I_{K(V)}$ and fourth power ($n^4$) in $I_{to}$. The activation, inactivation and recovery time courses of $I_{to}$ were much faster than that of $I_{K(V)}$. The steady-state activation and inactivation of $I_{K(V)}$ was at the more hyperpolarized range than that of $I_{to}$ contrary to the reports in other vascular SMCs. Tetraethylammonium chloride (TEA; 10 mM) markedly inhibited $I_{K(V)}$ but little affected $I_{to}$. 4-Aminopyridine (4-AP) had similar inhibitory potency on both currents. While a low concentration of $Cd^{2+}$ (0.5 mM) shifted the current- voltage relationship of $I_{to}$ to the positive direction without change of maximum conductance, $Cd^{2+}$ did not cause any appreciable change for $I_{K(V)}$.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2007년도 추계학술대회 논문집
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• pp.149-150
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• 2007

ONO(Oxide-Nitride-Oxide)구조는 기억소자의 전하보유 능력을 향상시키기 위해 도입된 게이트 절연막이다. 본 연구에서는 ELA(Excimer Laser Annealing)방법으로 비정질 실리콘을 결정화 시켜서 그 위에 NVM(Nonvolatile Memory)소자를 만들어 전기적 특성을 측정하여 결과를 나타내었다. 실험 결과 같은 크기의 $V_D$에서 $V_G$를 조절함으로써 $I_D$의 크기를 조절할 수 있었다. $V_G-I_D$ Graph에서는 $I_{on}$과 $I_{off}$, 그리고 Threshold Voltage를 알 수 있었다. $I_{on}/I_{off}$ Ratio는 $10^3-10^4$이다. $V_G-I_D$ Graph에서는 게이트에 인가하는 Bias의 양을 통해서 Threshold Voltage의 크기를 조절할 수 있었다. 이는 Trap되는 Charge의 양을 임의로 조절할 수 있다는 것을 의미하며, 이러한 Programming과 Erasing의 특성을 이용하여 기억소자로서의 역할을 수행하게 된다.

• Journal of Advanced Marine Engineering and Technology
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• 제41권2호
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• pp.140-145
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• 2017

Newly designed vapor-injection heat pumps have been proposed and analyzed in the present study. An economizer-type vapor-injection (V-I) system has been employed as the standard system because of its reliability and simple control method. The V-I system has a re-cooler and re-heater for cooling and heating, respectively. Solar panels have been installed in the V-I heat pump as well as in the re-heater in order to enhance heating capacity and performance. R410A has been employed as a working fluid and performance analysis has been conducted under various conditions. Results are summarized as follows: (1) The V-I system with the re-cooler yielded a marginally higher coefficient of performance (COP) than the conventional V-I refrigeration system. (2) By increasing the re-cooler cooling capacity, enhanced system performance as compared to the conventional V-I system was observed. (3) The re-heater negatively affected the system performance; hence, the V-I heat pump with the re-heater yielded a lower COP than that of the conventional V-I heat pump used for heating. (4) Although the solar panels increased the system performance, this increase could not offset performance degradation by the re-heater.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2008년도 하계학술대회 논문집 Vol.9
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• pp.115-115
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• 2008

본 논문에서는 최적화된 ECMP 공정을 위하여 I-V 특성 곡선과 CV법을 이용하여 패시베이션 막의 active, passive, transient, trans-passive 영역의 전기화학적 특성을 알아보았으며, Cu막의 표면 형상을 Scanning Electron Microscopy (SEM) 측정과 금속 화학적 조성을 Energy Dispersive Spectroscopy (EDS) 분석을 통해 분석하였다.

• ETRI Journal
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• 제11권2호
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• pp.109-119
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• 1989

Based on the 2-dimensional charge-control simulation[4], a purely analytical model for MODFET's is proposed. In this model, proper treatment of the diffusion effect in the 2-DEG transport due to the gradual channel opening along the 2-DEG channel was made to explain the enhanced mobility and increased thershold voltage. The channel thickness and gate capacitance are experssed as functions of gate vlotage including subthreshold characteristics of the MODFET's analytically. By introducing the finite channel opening and an effective channel-length modulation, the slope of the saturation region of the I-V curves was modeled. The smooth transition of the I-V curves from linear-to-saturation region of the I-V curves was possible using the continuous Troffimenkoff-type of field-dependent mobility. Furthermore, a correction factor f was introduced to account for the finite transtition section forming between the GCA and the saturated section. This factor removes the large discrepanicies in the saturation region fo the I-V curves presicted by existing 1-dimensional models. The fitting parameters chosen in our model were found to be predictable and vary over relatively small range of values.

• 반도체디스플레이기술학회지
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• 제17권2호
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• pp.12-15
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• 2018

InSb (III-V compound semiconductor) is used for photodiode to detect the mid-wavelength infrared radiation. Generally the quantum efficiency of InSb IR FPAs(Focal Plane Arrays) is known to be determined by thickness of InSb and transmittance of anti-reflection coating layer. In this study, we confirmed that the C-V characteristics of detector array affects the quantum efficiency of the InSb IR FPAs. We fabricated the IR FPAs with various $V_{fb}$(flat band voltage) values and confirmed the tendency between the $V_{fb}$ value and quantum efficiency of the IR FPAs.

• 한국수소및신에너지학회논문집
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• 제10권1호
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• pp.59-69
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• 1999

반응성 스퍼터링법으로 AIN 박막을 증착하여 Al/AlN/Si구조의 MIS소자용 절연박막으로서의 응용가능성에 대해 연구하였다. 기판온도 $300^{\circ}C$, RF power 150W, 스퍼터링 압력 5mTorr, 아르곤과 질소 가스유량비 1:1 의 조건에서 5%의 수소가스를 부가적으로 첨가해 주는 시기에 따른 AIN박막의 표면형상변화, I-V특성, C-V특성, 조성을 조사하였다. 수소첨가에 따라 증착속도는 상당히 감소하였으나 표면형상 및 거칠기는 크게 변하지 않았다. I-V특성에서는 AIN 박막 증착시 초기 20분간 수소첨가를 시킨 경우가 후기 20분간 수소첨가를 시킨 경우보다 보다 우수한 절연특성을 보였다. 또한 C-V특성에서도 수소가 첨가됨에 따라 플랫밴드전압이 매우 낮아졌으며, 초기 20분간 수소첨가를 시킨 경우는 히스테리시스를 거의 보이지 않았으나, 후기 20분간 수소첨가를 시킨 경우는 상당한 히스테리시스를 보였다. AES를 이용한 조성분석을 통해 수소가스가 첨가됨에 따라 AIN박막내의 산소농도가 낮아진다는 사설을 발견하였고, 이에 따라 박막의 절연특성 및 C-V특성이 향상될 수 있는 가능성을 보였다.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 1999년도 춘계학술대회 논문집
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• pp.263-266
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• 1999

Electrolunlinescent devices based on conjugated polymer emitting materials have been much attracted possible applications for multicolor flat panel display, since the conjugated polymers have a small band gap emitting obtained at a low driving voltage. In this paper, we fabricated the single layer EL device using poly(3-hexylthiophene) as emitting material Electroluminescence(EL) and I-V-L characteristics of indium-tin-oxide[ITO]P3HT/AI device with a various thickness were investigated. It was demonstrate that the I-V characteristics depend, not the voltage but the electric- field strength, The current is dependent on the electric filed and not on the applied voltage, indicating that the carriers are injected by a tunneling process. In the device, the barrier to hole injection is only 0.5eV and the barrier to electron injection is 1.5eV.