• 제목/요약/키워드: Uniformity control

검색결과 477건 처리시간 0.025초

브라운관의 자기장 영향 분석용 저자기장 제어 장치의 설계 및 제작 (Development and Construction of low Magnetic Field Control System for Analysis of Magnetic Field Effect in the Deflection Yoke)

  • 박포규;김영균;신석우;최형호;김태익;정동근
    • 한국자기학회지
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    • 제13권6호
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    • pp.251-256
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    • 2003
  • 컴퓨터, TV, 의료용기기 등의 모니터로 사용되는 브라운관의 자기장 영향에 따른 특성을 분석하기 위한 자기장 발생 및 측정장치를 개발하였다. 한 변의 길이가 2 m인 정육각형 형태의 3-축 자기장 발생장치, 컴퓨터, 전원공급기 및 자기장 측정기 등을 이용하여 전세계 각 나라별 지구자기장(Earth Magnetic Field, EMF)을 발생시킬 수 있는 대형 3-축 코일 시스템을 설계하고 제작하였다. 각 코일의 코일상수는 X축(E-W)는 30.31 $\mu$T/A, Y축(Ver)는 29.73 $\mu$T/A 및 Z축(N-S)는 30.51 $\mu$T/A이고, 자기장 분해능은 0.01 $\mu$T이었다. 자기장 균일도는 사용되는 편향요크(Deflection York, DY)의 크기를 고려하여 중심에서 12 cm 이내의 공간에서 측정하였고, 균일도는 1 % 내외 이었다.

DyF3 paste 제조 및 이를 이용한 Nd-Fe-B 입계확산 자석의 특성 연구 (Synthesis of DyF3 paste and Magnetic Properties of GBDPed Nd-Fe-B Magnets)

  • 전광원;차희령;이정구
    • 한국분말재료학회지
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    • 제23권6호
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    • pp.437-441
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    • 2016
  • Recently, the grain boundary diffusion process (GBDP), involving heavy rare-earth elements such as Dy and Tb, has been widely used to enhance the coercivity of Nd-Fe-B permanent magnets. For example, a Dy compound is coated onto the surface of Nd-Fe-B sintered magnets, and then the magnets are heat treated. Subsequently, Dy diffuses into the grain boundaries of Nd-Fe-B magnets, forming Dy-Fe-B or Nd-Dy-Fe-B. The dip-coating process is also used widely instead of the GBDP. However, it is quite hard to control the thickness uniformity using dip coating. In this study, first, a $DyF_3$ paste is fabricated using $DyF_3$ powder. Subsequently, the fabricated $DyF_3$ paste is homogeneously coated onto the surface of a Nd-Fe-B sintered magnet. The magnet is then subjected to GBDP to enhance its coercivity. The weight ratio of binder and $DyF_3$ powder is controlled, and we find that the coercivity enhances with decreasing binder content. In addition, the maximum coercivity is obtained with the paste containing 70 wt% of $DyF_3$ powder.

나노 반도체 소자를 위한 펄스 플라즈마 식각 기술 (Application of Pulsed Plasmas for Nanoscale Etching of Semiconductor Devices : A Review)

  • 양경채;박성우;신태호;염근영
    • 한국표면공학회지
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    • 제48권6호
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    • pp.360-370
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    • 2015
  • As the size of the semiconductor devices shrinks to nanometer scale, the importance of plasma etching process to the fabrication of nanometer scale semiconductor devices is increasing further and further. But for the nanoscale devices, conventional plasma etching technique is extremely difficult to meet the requirement of the device fabrication, therefore, other etching techniques such as use of multi frequency plasma, source/bias/gas pulsing, etc. are investigated to meet the etching target. Until today, various pulsing techniques including pulsed plasma source and/or pulse-biased plasma etching have been tested on various materials. In this review, the experimental/theoretical studies of pulsed plasmas during the nanoscale plasma etching on etch profile, etch selectivity, uniformity, etc. have been summarized. Especially, the researches of pulsed plasma on the etching of silicon, $SiO_2$, and magnetic materials in the semiconductor industry for further device scaling have been discussed. Those results demonstrated the importance of pulse plasma on the pattern control for achieving the best performance. Although some of the pulsing mechanism is not well established, it is believed that this review will give a certain understanding on the pulsed plasma techniques.

ALD-assisted Hybrid Processes for improved Corrosion Resistance of Hard coatings

  • Wan, Zhixin;Kwon, Se-Hun
    • 한국표면공학회:학술대회논문집
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    • 한국표면공학회 2016년도 추계학술대회 논문집
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    • pp.105-105
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    • 2016
  • Recently, high power impulse magnetron sputtering (HIPIMS) has attracted considerable attentions due to its high potential for industrial applications. By pulsing the sputtering target with high power density and short duration pulses, a high plasma density and high ionization of the sputtered species can be obtained. HIPIMS has exhibited several merits such as increased coating density, good adhesion, microparticle-free and smooth surface, which make the HIPIMS technique desirable for synthesizing hard coatings. However, hard coatings present intrinsic defects (columnar structures, pinholes, pores, discontinuities) which can affect the corrosion behavior, especially when substrates are active alloys like steel or in a wear-corrosion process. Atomic layer deposition (ALD), a CVD derived method with a broad spectrum of applications, has shown great potential for corrosion protection of high-precision metallic parts or systems. In ALD deposition, the growth proceeds through cyclic repetition of self-limiting surface reactions, which leads to the thin films possess high quality, low defect density, uniformity, low-temperature processing and exquisite thickness control. These merits make ALD an ideal candidate for the fabrication of excellent oxide barrier layer which can block the pinhole and other defects left in the coating structure to improve the corrosion protection of hard coatings. In this work, CrN/Al2O3/CrN multilayered coatings were synthesized by a hybrid process of HIPIMS and ALD techniques, aiming to improve the CrN hard coating properties. The influence of the Al2O3 interlayer addition, the thickness and intercalation position of the Al2O3 layer in the coatings on the microstructure, surface roughness, mechanical properties and corrosion behaviors were investigated. The results indicated that the dense Al2O3 interlayer addition by ALD lead to a significant decrease of the average grain size and surface roughness and greatly improved the mechanical properties and corrosion resistance of the CrN coatings. The thickness increase of the Al2O3 layer and intercalation position change to near the coating surface resulted in improved mechanical properties and corrosion resistance. The mechanism can be explained by that the dense Al2O3 interlayer acted as an excellent barrier for dislocation motion and diffusion of the corrosive substance.

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High Efficiency AMOLED using Hybrid of Small Molecule and Polymer Materials Patterned by Laser Transfer

  • Chin, Byung-Doo;Suh, Min-Chul;Kim, Mu-Hyun;Kang, Tae-Min;Yang, Nam-Choul;Song, Myung-Won;Lee, Seong-Taek;Kwon, Jang-Hyuk;Chung, Ho-Kyoon;Wolk, Martin B.;Bellmann, Erika;Baetzold, John P.
    • Journal of Information Display
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    • 제4권3호
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    • pp.1-5
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    • 2003
  • Laser-Induced Thermal Imaging (LITI) is a laser addressed patterning process and has unique advantages such as high-resolution patterning with over all position accuracy of the imaged stripes of within 2.5 micrometer and scalability to large-size mother glass. This accuracy is accomplished by real-time error correction and a high-resolution stage control system that includes laser interferometers. Here the new concept of hybrid system that complement the merits of small molecule and polymer to be used as an OLED; our system can realize easy processing of light emitting polymers and high luminance efficiency of small molecules. LITI process enables the stripes to be patlerned with excellent thickness uniformity and multi-stacking of various functional layers without having to use any type of fine metal shadow mask. In this study, we report a full-color hybrid OLED using the multi-layered structure consisting of small molecules and polymers.

플렉서블 디스플레이용 저온공정을 갖는 대향 타겟식 스퍼터링 장치를 이용한 ZrO2 가스 차단막의 특성 (Properties of ZrO2 Gas Barrier Film using Facing Target Sputtering System with Low Temperature Deposition Process for Flexible Displays)

  • 김지환;조도현;손선영;김화민;김종재
    • 한국전기전자재료학회논문지
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    • 제22권5호
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    • pp.425-430
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    • 2009
  • $ZrO_2$ film was deposited by facing target sputtering (FTS) system on polyethylene naphthalate (PEN) substrate as a gas barrier layer for flexible organic light emitting devices (FOLEDs), In order to control the heat of the FTS system caused by the ion bombardment in the cathode compared with the conventional sputtering system, the process characteristics of the FTS apparatus are investigated under various sputtering conditions such as the distance between two targets ($d_{TT}$), the distance between the target and the substrate ($d_{TS}$), and the deposition time. The $ZrO_2$ film by the FTS system can reduce the damage on the films because the ion bombardment with high-energy particles like gamma-electrons, Moreover, the $ZrO_2$ film with optimized condition ($d_{TT}$=140 mm) as a function of the distance from center to edge showed a very uniform thickness below 5 % for a deposition time of 3 hours, which can improve the interface property between the anode and the plastics substrate for flexible displays, It is concluded that the $ZrO_2$ film prepared by the FTS system can be applied as a gas barrier layer or an interlayer between the anode and the plastic substrate with good properties of an uniform thickness and a low deposition-temperature.

첨가재료별 증편의 가공 적성 검토 (Studies on Processing Aptitude of Various Additives on the Preparation of Jeung-pyun)

  • 최영희;전화숙;강미영
    • 동아시아식생활학회지
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    • 제6권1호
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    • pp.85-92
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    • 1996
  • 첨가재료를 달리한 증편의 가공적성을 검토하고자 증편제조시 6가지 첨가재료를 첨가하여 증편반죽의 발효에 따른 이화학적 변화, 증편의 외관, 저장성 및 관능적 특성을 비교 검토한 결과는 다음과 같다. 1. 발효의 진전과 더불어 증편반죽은 경시적인 pH의 감소, 점도의 증가, 부피의 증가를 보였다. 발효 5시간 경과 후 첨가재료를 첨가한 증편반죽의 pH는 높은 경향을 보였다. 반죽의 점도가 높은 콩가루 첨가구의 반죽의 부피도 가장 많이 팽창하였으며 쑥가루, 전지분유, 탈지분유의 경우에도 반죽의 부피증가와 부피증가 간의 변화양상은 유사한 경 향을 나타내었다. 2. 발효과정을 거친 증편반죽을 성형하여 증자한 후 단면의 사진을 관찰한 결과 전지분유, 쑥가루, 난황, 난백 첨가구가 대조구와 유사하게 잘 부풀었으며 콩가루, 전지분유, 난백 첨가구는 기공의 크기가 작고 균일하였다. 3. 첨가재료를 달리한 증편의 DSC thermogram을 비교 분석한 결과 전지분유, 콩가루 첨가구는 대조구에 비해 엔탈피(ΔH)의 값이 낮게 나타나 노화를 상당히 지연시키는 것을 알 수 있었다 또한 저장기간중 Textrometer로 측정한 hardness의 변화와 DSC thermogram을 함께 고려해 보았을 때 hardness를 감소시키고 엔탈피(ΔH)를 감소시키는 것은 콩가루 및 전지분유, 탈지분유, 난백, 쑥가루를 첨가하였다. 4. 증편의 관능검사 결과 콩가루, 전지분유, 탈지분유, 난황첨가구가 대조구에 비해 단단한 정도가 유의적으로 낮았으며 난황 및 쑥가루 첨가구는 증편의 기공이 균일하지 못하였고 기공이 크고 성긴 것으로 평가되었고 콩가루 및 쑥가루 첨가구는 쓴맛이 유의적으로 높았다.

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골프장에서 차나무류 추출물과 화학 방제제를 이용한 지렁이 분변토 발생 관리 (Management of Earthworm Casts using Pesticides and Tea Tree (Camellia oliefera) Extracts in Turfgrass of Golf Courses)

  • 신종창;김종경;최성환;전병덕;이동운
    • Weed & Turfgrass Science
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    • 제5권1호
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    • pp.35-41
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    • 2016
  • 지렁이 분변토는 골프장이나 경기장에서 경기력 저하와 잔디 관리의 균일성을 떨어트리는 위해요소이다. 본 연구는 골프장에서 지렁이 분변토 감소를 목적으로 화학적 방제제(bifenthrin GR+clothianidin GR, ethoprophos GR, imidacloprid SC, picoxystrobin WG, thiophanate-methyl WP)와 차나무(Camellia oliefera) 추출물의 효과를 골프장에서 조사하였다. 모든 처리에서 지렁이 분변토 수가 감소하였으며 thiophanate-methyl WP의 지렁이 분변토 발생 억제효과가 가장 높았다. 차나무 추출물 처리도 지렁이 분변토 발생 효과를 보였는데 펠렛형 차나무 종자추출 부산물과 차나무 추출물 액상제형이 차나무 추출물 입상제형에 비하여 효과가 높았으며, 차나무 추출물이나 부산물 처리가 분변토 관리의 대안이 될 수 있을 것으로 판단된다.

Gamma-PF 보드를 이용한 아날로그 감마카메라의 디지털화 연구 (A Study of Digitalizing Analog Gamma Camera Using Gamma-PF Board)

  • 김희중;소수길;봉정균;김한명;김장휘;주관식;이종두
    • 대한의용생체공학회:의공학회지
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    • 제19권4호
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    • pp.351-360
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    • 1998
  • 아날로그 감마카메라에 비해 디지털 카메라는 Q.C가 편리하고, Calibration과 조작이 매우 쉬운 장점들을 갖고 있어 영상 질을 향상시킬 뿐만 아니라 진단의 정확도를 높일 수 있다. 더욱이, 디지털 카메라로 획득한 디지털 영상은 PACS(Picture Archiving and Communication System) 뿐만 아니라 원격진료에도 활용될 수 있다. 그러나, 많은 병원들이 아직도 아날로그 카메라를 사용하고 있고 이들을 디지털 카메라로 대체하기는 어려운 상황에 있다. 본 연구는 아날로그 감마카메라를 디지털화 할 수 있는지의 가능성을 보는 것이었다. 카메라를 디지털화 한 후 균일도 계수능력 등의 물리적 특성을 측정하였다. 임상에서의 사용 가능성을 보기 위해 아날로그 시스템과 디지털 시스템을 동시에 연결하여 임상 데이터들을 획득하였다. 이들의 결과는 임상환경에서 아날로그 카메라를 디지털화 하 수 있다는 가능성을 보여주었다.

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더블 게이트 구조 적용에 따른 IGZO TFT 특성 분석 (Analysis of the Output Characteristics of IGZO TFT with Double Gate Structure)

  • 김지원;박기찬;김용상;전재홍
    • 한국전기전자재료학회논문지
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    • 제33권4호
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    • pp.281-285
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    • 2020
  • Oxide semiconductor devices have become increasingly important because of their high mobility and good uniformity. The channel length of oxide semiconductor thin film transistors (TFTs) also shrinks as the display resolution increases. It is well known that reducing the channel length of a TFT is detrimental to the current saturation because of drain-induced barrier lowering, as well as the movement of the pinch-off point. In an organic light-emitting diode (OLED), the lack of current saturation in the driving TFT creates a major problem in the control of OLED current. To obtain improved current saturation in short channels, we fabricated indium gallium zinc oxide (IGZO) TFTs with single gate and double gate structures, and evaluated the electrical characteristics of both devices. For the double gate structure, we connected the bottom gate electrode to the source electrode, so that the electric potential of the bottom gate was fixed to that of the source. We denote the double gate structure with the bottom gate fixed at the source potential as the BGFP (bottom gate with fixed potential) structure. For the BGFP TFT, the current saturation, as determined by the output characteristics, is better than that of the conventional single gate TFT. This is because the change in the source side potential barrier by the drain field has been suppressed.