• Journal of Sensor Science and Technology
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• v.18 no.4
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• pp.301-306
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• 2009

This paper describes the design and fabrication of 16$\times$16 microbolometer infrared focal plane arrays based on iMEMS technology. Amorphous silicon was used for infrared-sensitive material, and it showed the resistance of 18 Mohm and the temperature coefficient of resistivity of -2.4 %. The fabricated sensors exhibited responsivity of 78 kV/W and thermal time constant of 8.0 msec at a bias voltage of 0.5 V. The array performances had satisfactory uniformity less than 5 % within one-sigma. Also, 1/f noise of pixel was measured and the noise factor of $6\times10^{-11}$ was extracted. Finally, we obtained detectivity of $1.27\times10^9cmHz^{0.5}/W$ and noise equivalent temperature difference of 200 mK at a frame rate of 30 Hz.

• Proceedings of the Materials Research Society of Korea Conference
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• 2003.03a
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• pp.131-131
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• 2003

Surface micromachined uncooled IR detector with the optimized VOx bolometric layer was fabricated based on sandwich structure of the V$_2$O$_{5}$V/V$_2$O$_{5}$. In order to improve the detectivity of the IR detector, we optimized a few factors in the viewpoint of bolometric material. Vanadium oxide thin film is a promising material for uncooled microbolometers due to its high temperature coefficient of resistance at room temperature. It is, however, very difficult to deposit vanadium oxide thin films having high temperature coefficient of resistance and low resistance because of process limits in microbolometer fabrication. In order to increase the responsivity and decrease noise, we increase TCR of bolometric material and decrease room temperature resistance based on the sandwich structure of the V$_2$O$_{5}$V/V$_2$O$_{5}$ by conventional sputter. By oxygen diffusion through low temperature annealing of V$_2$O$_{5}$V/V$_2$O$_{5}$ in oxygen ambient, various mixed phase vanadium oxide was formed and we obtained TCR in range of-1.2 ~-2.6%/$^{\circ}C$ at room temperature resistance of 5~100k$\Omega$.mega$.

• Korean Journal of Optics and Photonics
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• v.23 no.4
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• pp.154-158
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• 2012

In this paper, for low cost infrared optical equipment, we design and fabricate an infrared optical system for an uncooled detector using PGM(Precision Glass Molding) lenses. The designed infrared optical system has a good athermalization, and the material of all of its lenses is a chalcogenide glass suitable for the PGM method. In addition, we also fabricate the same infrared optical system using SPDT(Single Point Diamond Turning) lenses in order to measure the optical performance of PGM lenses. We measure the MTF(Modulation Transfer Function) of the two infrared optical systems which use the PGM lenses and the SPDT lenses. And then we compare and analyze the images of them both. As a result, we find that they have only a very small difference in optical performance. If the use of PGM lenses increases, we expect to reduce the cost of infrared optical equipment.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.38 no.3
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• pp.229-235
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• 2001

Uncooled pyroelectric thin-film (Ba,Sr)TiO$_3$ infrared detectors thermally isolated from Si-substrate by Si$_3$N$_4$/SiO$_2$/Si$_3$N$_4$-membrane have been fabricated, and figures of merit for detectors were examined. The detector at $25^{\circ}C$ in air showed relatively high voltage responsivity of about 168.8 V/W and low specific detectivity of about 2.6$\times$10$^4$cm.Hz$^{1}$2//W at 1 Hz-chopping frequency because of very small signal-to-noise voltage ratio. It could be found that both thermal noise voltage and thermal time constant of the detector were very large by analyzing dependences of output waveforms on chopping frequency and temperature.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2001.11b
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• pp.558-561
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• 2001

Vanadium oxide ($VO_x$) thin films are very good candidate material for uncooled infrared (IR) detectors due to their high temperature coefficient of resistance (TCR) at room temperature. But, the deposition of $VO_x$ thin films showing good electrical properties is very difficult in micro bolometer fabrication process using sacrificial layer removal because of its low process temperature and thickness of thin films less than $1000{\AA}$. This paper presents a new fabrication process of $VO_x$ thin films having high TCR and low resistance. Through sandwich structure of $VO_{x}(100{\AA})/V(80{\AA})/VO_{x}(500{\AA})$ by sputter method and post-annealing at oxygen ambient, we have achieved high TCR more than $-2%/^{\circ}C$ and low resistance less than $10K\Omega$ at room temperature.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.37 no.2
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• pp.5-12
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• 2000

Uncooled metallic thin-film thermopile infrared detectors have been fabricated, and the figures of merit for the detectors were examined. The hot junctions of a thermopile were prepared on a $Si_{3}N_{4}/SiO_{2}/Si_{3}N_{4}$-membrane which acts as a thermal isolation layer, the cold junctions on the membrane supported with the silicon rim which functions as a heat sink, and Au-black was used as an infrared absorber. Infrared absorbance of Au-black, which strongly depends on the chamber pressure during Au-evaporation and its mass per area, was found to be about 90 ％ in the wavelength range from 3${\mu}{\textrm}{m}$ to 14${\mu}{\textrm}{m}$. Voltage responsivity, noise equivalent power, and specific detectivity of Bi-Sb thermopile infrared detector at 5 Hz-chopping frequency were about 10.5V/W, 2.3 nW/Hz$^{1/2}$, 및 $1.9\times10^{7}$ cm.Hz$^{1/2}$/w at room temperature in air, respectively.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.38 no.3
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• pp.75-75
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• 2001

Si₃N₄/SiO₂/Si₃N₄ 멤브레인에 의해 실리콘 기판으로부터 열차단된 비냉각 초전형 박막 (Ba,Sr)TiO₃ 적외선 검지기를 제작하고, 적외선 검지기의 특성을 논의하였다. 25℃의 공기중에서 쵸핑주파수가 1 ㎐일 때 적외선 검지기는 약 168.8 V/W의 비교적 높은 전압 감응도를 나타내었으나, 매우 작은 신호대잡음비 때문에 약 2.6×10⁴㎝·㎐/sup 1/2//W의 낮은 비검지도를 나타내었다. 또한 출력파형의 쵸핑주파수 및 온도 의존성에 대한 정성적인 해석으로부터 적외선 검지기의 열잡음전압 및 열시정수가 모두 상당히 크다는 것을 알 수 있었다.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2010.06a
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• pp.178-178
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• 2010

칼코게나이드계 재료를 사용한 비냉각 적외선 센서의 윈도우를 제작하여 그 특성을 조사하였다. 조성을 EDS로 분석한 결과 Ge-Se-Sb로 구성되어 있음을 확인하였다. 두께 2mm인 윈도우 모재를 양면 경연마한 후 코팅 설계치로 8-12um 영역에서 평균 투과도가 95.6%로 나타났다. 이온빔보조증착장치를 이용하여 Ge, ZnS, $YF_3$ 소스로 코팅한 결과 투과도는 동일파장영역에서 약 94%로 나타났다. 칼코게나이드 원재료의 투과도는 약 69%로써 12um 영역 부근에서 강한흡수를 보였다. 코팅면의 거칠기 값(Ra)은 약 1.5 nm로써 매우 매끄러운 면을 얻었으며, 단면 SEM 측정 결과 설계치와 유사한 박막 두께를 얻었다.

• Proceedings of the KIEE Conference
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• 2008.07a
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• pp.1248-1249
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• 2008

The $V_{1.8}W_{0.2}O_5$ thin films deposited on $Pt/Ti/SiO_2/Si$ substrates by RF sputtering method exhibited fairly good TCR and dielectric properties. It was found that film crystallinity, dielectric properties, and TCR properties were strongly dependent upon the annealing temperature. The dielectric constants of the $V_{1.8}W_{0.2}O_5$ thin films annealed at 400$^{\circ}C$ were 38.11, with a dielectric loss of 0.134, respectively. Also, the TCR values of the $V_{1.8}W_{0.2}O_5$ thin films annealed at 400$^{\circ}C$ were about -3.15%/K.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.26 no.8
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• pp.624-628
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• 2013

With the recent development of less-costly uncooled detector technology, expensive optics are among the remaining significant cost drivers in the thermography camera. As a potential solution to this problem, the fabrication of IR lenses using chalcogenide glass has been studied in recent years. We report on the molding and evaluation of a ultra-precision chalcogenide-glass lens for the thermography camera for body-temperature monitoring. In addition, we fabricated prototype thermography camera using the chalcogenide-glass lens and obtained the thermal image from the camera. In this work, it was found out that thermography camera discerned body-temperature between 20 and $50^{\circ}C$ through the analysis of thermal image. It is confirmed that thermography camera using the chalcogenide-glass lens is applicable to the body-temperature monitoring system.