• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2000.05b
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• pp.142-145
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• 2000

The performance of ac plasma display panels (PDP) is influenced strongly by the surface glow discharge characteristics on the MgO thin films. This paper deals with the surface glow discharge characteristics and some physical properties of MgO thin films prepared by reactive RF planar unbalanced magnetron sputtering in connection with ac PDP. The samples prepared with the dc bias voltage of -10V showed lower discharge voltage and lower erosion rate by ion bombardment than those samples prepared by conventional magnetron sputtering or E-beam evaporation. The main factor that improves the discharge characteristics by bias voltage is considered to be due to the morphology changes or crystal structure of the MgO thin film by ion bombardment during deposition process.

• Proceedings of the KIEE Conference
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• 2000.07c
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• pp.2032-2034
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• 2000

The performance of ac plasma display panels (PDP) is influenced strongly by the surface glow discharge characteristics on the MgO thin films. This paper deals with the surface slew discharge characteristics and some physical properties of MgO thin films prepared by reactive RF planar unbalanced magnetron sputtering in connection with ac PDP. The samples prepared with the do bias voltage of -10V showed lower discharge voltage and lower erosion rate by ion bombardment than those samples prepared by conventional magnetron sputtering or E-beam evaporation. The main factor that improves the discharge characteristics by bias voltage is considered to be due to the morphology changes or crystal structure of the MgO thin film by ion bombardment during deposition process.

• Proceedings of the Korean Institute of Surface Engineering Conference
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• 2017.05a
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• pp.70-70
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• 2017

TSV(through silicon via)는 긴 종횡비를 갖는 패턴에 Cu, Ta, Ti을 높은 conformality를 갖도록 증착하는 공정이다. Magnetron cathode의 자석 배열 설계는 target 물질 종류에 따라서 multitrack, water drop type등이 있으며 target과 substrate 사이의 공간에 플라즈마를 형성시켜서 기판에 이온 입사량을 늘린 후 기판 바이어스를 이용하여 이온 충돌, re-sputtering을 통한 재증착 과정을 통해 치밀한 금속 박막을 연속적으로 형성할 수 있도록 하는 것이 목적이다. 또한 sputter가 사용되고 있는 분야에 효율을 증대시키고, 증착되는 막의 품질향상을 위해 UBMS를 사용하고 있으며, 산업에 사용되어 지는 300 mm wafer용 시스템은 제작비가 약 10억 원 정도 소요되며 다양한 테스트를 진행하기 위해선 많은 비용이 소요된다. 따라서 비용과 소요시간을 줄여 다양한 테스트를 위해 소규모 플라즈마 시스템을 설계하게 되었다. 61 l/sec 터보 분자 펌프와 다이아프램 펌프를 기초로한 TMP station에 2.75 인치 CF flange가 장착된 6 way cross를 main 챔버로 활용하고, 작은 size의 unbalanced magnetron cathode를 제작, 장착한 다음 6 way cross 주변에 전자석을 적절히 배치하여 300 mm wafer system에서와 동일한 물리적 현상을 테스트 할 수 있도록 하였다. Fig1. (a) UBMS system의 사진을 나타내었고, (b)에는 6 way cross 내부에 발생된 플라즈마의 형상을 나타내었다. 전원 장치는 Advanced Energy사의 MDX-1.5K DC power supply를 사용하였고, 방전 전압 - 전류 관계의 가스 압력에 따른 plasma 현상과 magnetron 배율에 따른 plasma 현상 그리고 전자석에 의한 영향을 주로 관찰 하였다.

• Proceedings of the Korean Institute of Surface Engineering Conference
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• 2013.05a
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• pp.176-176
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• 2013

CrZrN 3원계 박막은 상온에서 매우 우수한 기계적 특성을 나타내지만, $500^{\circ}C$ 이상의 고온에서는 Zr의 산화로 인하여 기계적 특성이 저하되게 된다. 따라서 본 연구에서는 CrZrN 박막의 고온 특성을 개선하기 위해서 내산화성이 향상에 영향을 미치는 표면 산화물을 만들기 위해 산소 원소를 첨가하여 CrZrON 4원계 oxynitride 박막을 segment target을 이용해 합성하였고, 박막의 미세구조를 분석하였다.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.28 no.10
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• pp.648-651
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• 2015

The characterizations of zinc oxide (ZnO) buffer layers grown by unbalanced magnetron (UBM) sputtering under various substrate temperatures for inverted organic solar cells (IOSCs) were investigated. UBM sputter grown ZnO films exhibited higher crystallinity with increasing the substrate temperature, resulting in uniform and large grain size. Also, the electrical properties of ZnO films are improved with increasing substrate temperature. In the results, the performance of IOSCs critically depended on the substrate temperature during the film growth because the crystalllinity of the ZnO film affect the carrier mobility of the ZnO film.

• Korean Journal of Materials Research
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• v.20 no.12
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• pp.629-635
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• 2010

Abstract In this study characteristics of Al-doped ZnO thin film by HIPIMS (High power impulse sputtering) are discussed. Deposition speed of HIPIMS with conventional balanced magnetic field is measured at about 3 nm/min, which is 30% of that of conventional RF sputtering process with the same working pressure. To generate additional magnetic flux and increase sputtering speed, electromagnetic coil is mounted at the back side of target. Under unbalanced magnetic flux from electromagnet with 1.5A coil current, deposition speed of AZO thin film is increased from 3 nm/min to 4.4 nm/min. This new value originates from the decline of particles near target surface due to the local magnetic flux going toward substrate from electromagnet. AZO film sputtered by HIPIMS process shows very smooth and dense film surface for which surface roughness is measured from 0.4 nm to 1 nm. There are no voids or defects in morphology of AZO films with varying of magnetic field. When coil current is increased from 0A to 1A, transmittance of AZO thin film decreases from 80% to 77%. Specific resistance is measured at about $2.9{\times}10-2\Omega{\cdot}cm$. AZO film shows C-axis oriented structure and its grain size is calculated at about 5.3 nm, which is lower than grain size in conventional sputtering.

• Proceedings of the Korean Vacuum Society Conference
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• 2007.02a
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• pp.146-146
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• 2007

• Proceedings of the Korean Vacuum Society Conference
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• 2001.02a
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• pp.183-183
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• 2001

• Proceedings of the Korean Institute of Surface Engineering Conference
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• 2000.11a
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• pp.86-87
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• 2000

• Proceedings of the Korean Institute of Surface Engineering Conference
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• 2000.11a
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• pp.15-16
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• 2000